Abstract: A new antibiotic, named Conagenin, is provided which can exhibit useful carcinostatic or antitumor activities on carcinomas and tumors, particularly malignant tumors, of mammalian animals including man. Conagenin can be produced by fermentation of microorganisms of genus Streptomyces, typically Streptomyces roseosporus MI696-AF3 strain identified under the deposit number FERM BP-2738. Conagenin has formula (I) and is useful for medicinal purposes, particularly as carcinostatic agent or antitumor agent for inhibiting carcinomas and malignant tumors of mammalian animals, including man.

Abstract: 3-Deoxy mycaminosyl tylonolide derivatives represented by the following general formula and salts thereof: ##STR1## wherein X represents an oxygen atom or .dbd.N--OR.sup.4 (wherein R.sup.4 represents hydrogen or lower alkyl); R.sup.1 represents a hydrogen atom, an acyl group or an alkylsilyl group; R.sup.2 represents a hydrogen atom or an acyl group; and R.sup.3 represents a hydrogen atom or a hydroxyl group. The compounds of this invention of the formula (I) are novel compounds and have excellent antibacterial activity.

Abstract: As a new compound is now provided N-acetylbenanomicin B which is useful as an antifungal agent and also as antiviral agent for inhibiting infection of human T-cell with HIV, namely a virus causative of acquired human immunodeficiency syndrome. N-acetylbenanomicin B may be prepared by acetylation of 4"-amino group of benanomicin B which is fermentatively produced by a new microorganism, MH193-16F4 strain of actinomycetes.

Abstract: As a new antifungal and antiviral antibiotic is provided benanomicin A 4"'-O-sulfate or a salt thereof having formula (I) ##STR1## wherein M.sup.1 denotes a mono-valent alkali metal atom or a di-valent alkaline earth metal atom or a hydrogen atom and A denotes an organic base; n is zero when M.sup.1 is an alkali metal atom or alkaline earth metal atom but n is 1 or zero when M.sup.1 is a hydrogen atom, and M.sup.2 denotes a hydrogen atom or an alkali metal atom or an alkaline earth metal atom. This new compound is useful as antifungal agent to treat fungal infections in mammals and as antiviral agent to inhibitingly treat HIV.

Abstract: A semiconductor device comprises a semiconductive substrate of a low impurity concentration, a channel area of a low impurity concentration formed on the substrate, a source area formed on the channel area and having a high impurity concentration of a conductive type opposite to that of the substrate, a drain area formed on the channel area and having a high impurity concentration of a conductive type opposite to that of the substrate, and an accumulating gate area formed on the channel area and having a conductive type same as that of the substrate. The source area and drain area are arranged in a predetermined direction along the substrate. The accumulating gate area comprises a first part sandwiched between the source area and the drain area and extended in a direction crossing the predetermined direction and second and third parts connected with the first part and approximately extended in the predetermined direction.

Abstract: Two new antibiotics which are now nominated as benanomicin A and benanomicin B, respectively, are fermentatively produced by the cultivation of a new microorganism, designated as MH193-16F4 strain, of Actinomycetes. Benanomicins A and B each show antifungal activity and are useful as a therapeutic antifungal agent. A new compound, dexylosylbenanomicin B is now produced by chemical conversion of benanomicin B, and this semi-synthetic antibiotic also shows antifungal activity and is useful as a therapeutic antifungal agent.

Abstract: An insulated-gate type transistor having a semiconductor body of a low impurity concentration, a heavily-doped source region of a conductivity type opposite to that of the semiconductor body for supplying charge carriers, a heavily-doped region for receiving the carriers supplied form the source region, both of which regions may be provided separately in a main surface of the body, a channel region located between the source and drain regions for the travel of these carriers, an insulated-gate structure inputted with a gate voltage for controlling the travel of those carriers, a semiconductor region formed in the neighborhood of the source region within the body and having a portion located below the source region and another portion extending beyond therefrom toward the drain region and serving to define the channel region and to increase the ratio of the amount of carriers reaching the drain region to the total amount of the carriers supplied from the source region.

Abstract: 2,6-Dideoxy-2-fluoro-L-talopyranose and 1-substituted derivatives thereof, including methyl 2,6-dideoxy-2-fluoro-L-talopyranoside and 3,4-di-O-protected-2,6-dideoxy-2-fluoro-L-talopyranosyl halides, are now provided and these new compounds are useful as intermediates for use in the synthesis of new compounds having antitumor activity, especially 7-O-(2,6-dideoxy-2-fluoro-.alpha.-L-talopyranosyl) daunomycinone or -adriamycinone. 2,6-Dideoxy-2-fluoro-L-talopyranose shows antibacterial activity. 2,6-Dideoxy-fluoro-L-talopyranose and the 1-substituted derivatives thereof may be produced by a multi-stage process starting from L-fucose.

Abstract: New physiologically active substances, named probestin and prostatin, respectively, are produced from a new microorganism, Streptomyces azureus MH663-2F6 strain identified as FERM P-9541 or FERM BP-1963. Probestin and prostatin have an activity inhibitory to aminopeptidase M and also have immunopotentiating properties.

Abstract: This invention relates to a PWM power converter for switching a plurality of bridge-connected semiconductor switching elements based on PWM signals. As the semiconductor switching elements, elements with a low ON voltage and small conduction loss, and elements with a small switching loss and capable of high-speed switching are combined to improve power conversion efficiency.

Abstract: A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.

Abstract: As new compounds are now provided 14-O-(3,4-disubstituted benzoyl)adriamycins which are of low cytotoxicity and exhibit a high activity inhibitory to the reverse transcriptase of human immunodeficiency virus (HIV) and which can inhibit propagation of HIV.

Abstract: An insulated-gate static induction transistor is formed by establishing a potential barrier in a semiconductor region of one conductivity type between the source and the drain regions of the other conductivity type. The height of the potential barrier should be sensitive to the drain voltage as well as to the gate voltage. Therefore, the semiconductor region should have a low impurity concentration and short length. The potential barrier can be established by varying the field effect of the gate voltage in the semiconductor region and/or by the built-in potential between the source region and the semiconductor region.

Abstract: A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.

Abstract: A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation.

Abstract: In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good cyrstal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.

Abstract: A pair of static induction thyristors, which are coupled in parallel in the opposite bias directions between an AC power source and a load, is turned on by a light signal and is turned off by natural commutation, a light signal or an electric signal. The turn-off light signal is generated within a phase angle of 90.degree. in the time axis around the zero-cross point of the AC voltage from the AC power source.

Abstract: The present invention relates to novel Spergualin-related compounds represented by the general formula [I] ##STR1## (wherein X is ##STR2## R is --H or --CH.sub.2 OH; R.sub.1 is --H, ##STR3## R.sub.2 is a residue obtained by removing, from an amino acid or peptide, the hydroxyl group of the carboxyl group and, when R.sub.1 is a group other than --H, R.sub.2 is same as R.sub.1), or a pharmacologically acceptable salt thereof. Said compounds or salts thereof have an immuno-modulating action.

Abstract: A semiconductor device comprises a semiconductor substrate of a low impurity concentration, a channel region formed on the substrate and having a low impurity concentration, a source region formed on the channel region and having a high impurity concentration of a conductive type opposite to that of the substrate, and a drain region formed on the channel region and having a high impurity concentration of a conductive type opposite to that of the substrate. The source region and the drain region are arranged along a predetermined direction along the substrate. The semiconductor device further includes an accumulating gate region of a conductive type same as that of the substrate, so formed as to surround either one of the source region and drain region, leaving a part of said channel region sandwiched between the source region and the drain region.

Abstract: An insulated-gate type transistor having a semi-conductor body of a low impurity concentration, a heavily-doped source region of a conductivity type opposite to that of the semiconductor body for supplying charge carriers, a heavily-doped drain region for receiving the carriers supplied from the source region, both of which regions may be provided separately in a main surface of the body, a channel region located between the source and drain regions for the travel of these carriers, an insulated-gate structure inputted with a gate voltage for controlling the travel of those carriers, a semiconductor region formed in the neighborhood of the source region within the body and having a portion located below the source region and another portion extending beyond therefrom toward the drain region and serving to define the channel region and to increase the ratio of the amount of carriers reaching the drain region to the total amount of the carriers supplied from the source region.