Abstract: In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Abstract: A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO2, ZrO2, HfO2, Al2O3) to avoid influencing critical dimensions and generate defects. In addition, tin-oxide and tin-carbide have low refractive index, k-value, and are transparent under 663-nm for lithography overlay.

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Abstract: In a plasma processing apparatus, a table has a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes. The peripheral segment has an upper surface lower than that of the wafer support. An outer focus ring is disposed over the peripheral segment and has a recess or a cutout at an inner portion of the outer focus ring, and the recess or cutout has through-holes. An inner focus ring is disposed in the recess or cutout of the outer focus ring. Lift pins respectively extend through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring. Shift mechanisms control shift of the respective lift pins.

Abstract: A polishing liquid containing: abrasive grains; at least one hydroxy acid component selected from the group consisting of a hydroxy acid and a salt thereof; and a compound Z, in which the compound Z has a hydrocarbon group which may be substituted and a polyoxyalkylene group, and a Z value represented by General Formula (1) below is 20 or more: Z=0.1×a2×b/c??(1) [in Formula (1), “a” represents the number of carbon atoms of the hydrocarbon group, “b” represents the total number of oxyalkylene groups in the compound Z, and “c” represents an HLB value of the compound Z.

Abstract: Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of first voltage pulses to an electrode assembly after receiving a first portion of the first synchronization waveform signal, wherein at least one first parameter of the first voltage pulses is set to a first value based on a first waveform parameter within the first portion of the first synchronization waveform signal, and delivering a second burst of second voltage pulses to the electrode assembly after receiving a second portion of the first synchronization waveform signal, wherein the at least one first parameter of the first voltage pulses is set to a second value based on a difference in the first waveform parameter within the second portion of the first synchronization waveform signal.

Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: Embodiments of a wet etch process and methods are disclosed herein to provide uniform wet etching of material within high aspect ratio features. In the present disclosure, a wet etch process is used to etch material within high aspect ratio features, such as deep trenches and holes, provided on a patterned substrate. Uniform wet etching is provided in the present disclosure by ensuring that wall surfaces of the material being etched (or wall surfaces adjacent to the material being etched) exhibit a neutral surface charge when exposed to the etch solution used to etch the material.

Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

Abstract: A plasma processing apparatus having an improved yield includes a metal base member having a disk shape or a cylindrical shape arranged inside a sample table; a refrigerant flow path arranged multiple times in a concentrical shape around a center of the base member; at least one temperature sensor; and a controller configured to detect a temperature of the base member or the wafer using the temperature sensor. The controller is configured to detect the temperature of the base member or the wafer based on one of a plurality of linear functions indicating a relation between an error and a set temperature of the refrigerant, and the linear functions are different corresponding to regions of a plurality of continuous temperature ranges within an adjustable temperature range of the refrigerant, and the plurality of linear functions include the same coefficient and have a point where the error is 0.

Abstract: A plasma processing method includes generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma, generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency bias power applied during the glow phase, and generating high-energy ions at the substrate using higher-frequency radio frequency bias power applied during an afterglow phase of the plasma. The frequency of the higher-frequency radio frequency bias power is greater than the frequency of the lower-frequency radio frequency bias power.

Abstract: Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.

Abstract: A method for forming a metal containing feature includes performing a deposition process, the deposition process comprising conformally depositing an over layer on top surfaces of a patterned mandrel layer and over a spacer layer on sidewalls of the patterned mandrel layer, and performing an etch process, the etch process comprising removing the over layer from the top surfaces of the patterned mandrel layer and shoulder portions of the spacer layer, and removing the shoulder portions of the spacer layer, using a fluorine containing etching gas.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material is received. A plurality of first main etches are performed to the semiconductor structure for a plurality of first durations under the first etching chemistry. A plurality of pumping operations are performed for a plurality of pumping durations, each of the pumping operations being prior to each of the first main etches. Each of the first durations is in a range of from about 1 second to about 2.5 seconds.

Abstract: A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 ?m and 250 ?m. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 ?m to less than 1 ?m. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.

Abstract: A semiconductor device forming method that includes a step for forming a coating layer and a step for performing etching. In the step for forming a coating layer, the coating layer is formed. The coating layer selectively covers a portion of a recess provided in a stacked structure supported by a base member. The portion of the recess is located on a front surface side of the recess. In the step for performing etching, a deep portion, which is deeper than the coating layer, of the recess is etched with a chemical liquid so as to widen a diameter of the deep portion.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.