Patents Examined by Allan W. Olsen
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Patent number: 12234400Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.Type: GrantFiled: January 19, 2023Date of Patent: February 25, 2025Inventors: Changjun Park, Jaesung Lee, Junghun Lim, Jungmin Oh, Sangwon Bae, Hyosan Lee
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Patent number: 12234382Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.Type: GrantFiled: July 26, 2021Date of Patent: February 25, 2025Assignee: CMC Materials LLCInventors: Hsin-Yen Wu, Jin-Hao Jhang, Cheng-Yuan Ko
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Patent number: 12224157Abstract: A plasma processing apparatus having an improved yield includes a metal base member having a disk shape or a cylindrical shape arranged inside a sample table; a refrigerant flow path arranged multiple times in a concentrical shape around a center of the base member; at least one temperature sensor; and a controller configured to detect a temperature of the base member or the wafer using the temperature sensor. The controller is configured to detect the temperature of the base member or the wafer based on one of a plurality of linear functions indicating a relation between an error and a set temperature of the refrigerant, and the linear functions are different corresponding to regions of a plurality of continuous temperature ranges within an adjustable temperature range of the refrigerant, and the plurality of linear functions include the same coefficient and have a point where the error is 0.Type: GrantFiled: March 25, 2021Date of Patent: February 11, 2025Assignee: Hitachi High-Tech CorporationInventors: Yuki Tanaka, Takamasa Ichino, Shintarou Nakatani, Ryusuke Eijima
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Patent number: 12217935Abstract: A plasma processing method includes generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma, generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency bias power applied during the glow phase, and generating high-energy ions at the substrate using higher-frequency radio frequency bias power applied during an afterglow phase of the plasma. The frequency of the higher-frequency radio frequency bias power is greater than the frequency of the lower-frequency radio frequency bias power.Type: GrantFiled: June 15, 2022Date of Patent: February 4, 2025Assignee: Tokyo Electron LimitedInventors: Ya-Ming Chen, Shyam Sridhar, Peter Lowell George Ventzek, Alok Ranjan
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Patent number: 12217970Abstract: Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.Type: GrantFiled: March 2, 2021Date of Patent: February 4, 2025Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONInventors: Chang-Koo Kim, Jun-Hyun Kim
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Patent number: 12211693Abstract: A method for forming a metal containing feature includes performing a deposition process, the deposition process comprising conformally depositing an over layer on top surfaces of a patterned mandrel layer and over a spacer layer on sidewalls of the patterned mandrel layer, and performing an etch process, the etch process comprising removing the over layer from the top surfaces of the patterned mandrel layer and shoulder portions of the spacer layer, and removing the shoulder portions of the spacer layer, using a fluorine containing etching gas.Type: GrantFiled: April 4, 2022Date of Patent: January 28, 2025Assignee: Applied Materials, Inc.Inventors: Chao Li, Gene Lee
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Patent number: 12203022Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.Type: GrantFiled: June 30, 2022Date of Patent: January 21, 2025Assignee: ENTEGRIS, INC.Inventors: Daniela White, David Kuiper, Susan Dimeo
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Patent number: 12198939Abstract: A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material is received. A plurality of first main etches are performed to the semiconductor structure for a plurality of first durations under the first etching chemistry. A plurality of pumping operations are performed for a plurality of pumping durations, each of the pumping operations being prior to each of the first main etches. Each of the first durations is in a range of from about 1 second to about 2.5 seconds.Type: GrantFiled: June 24, 2022Date of Patent: January 14, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Han-Yu Lin, Li-Te Lin, Tze-Chung Lin, Fang-Wei Lee, Yi-Lun Chen, Jung-Hao Chang, Yi-Chen Lo, Fo-Ju Lin, Kenichi Sano, Pinyen Lin
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Patent number: 12184259Abstract: A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 ?m and 250 ?m. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 ?m to less than 1 ?m. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.Type: GrantFiled: September 3, 2021Date of Patent: December 31, 2024Assignee: University of OregonInventors: Ignas Lekavicius, Hailin Wang
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Patent number: 12176219Abstract: A semiconductor device forming method that includes a step for forming a coating layer and a step for performing etching. In the step for forming a coating layer, the coating layer is formed. The coating layer selectively covers a portion of a recess provided in a stacked structure supported by a base member. The portion of the recess is located on a front surface side of the recess. In the step for performing etching, a deep portion, which is deeper than the coating layer, of the recess is etched with a chemical liquid so as to widen a diameter of the deep portion.Type: GrantFiled: June 26, 2020Date of Patent: December 24, 2024Assignee: SCREEN HOLDINGS CO., LTD.Inventors: Eiji Umeda, Masaki Inaba
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Patent number: 12165873Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.Type: GrantFiled: May 9, 2022Date of Patent: December 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: En-Ping Lin, Yu-Ling Ko, I-Chung Wang, Yi-Jen Chen, Sheng-Kai Jou, Chih-Teng Liao
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Patent number: 12157693Abstract: A method of manufacturing a window and a window manufactured by the same are provided. A method of manufacturing a window includes laser cutting a base glass into a preliminary window using first laser light, irradiating, with second laser light, a point spaced apart from an edge of the preliminary window at a first distance, and providing a window including a flat portion and an edge portion by wet etching the preliminary window irradiated with the second laser light. A method of manufacturing a window having a chamfer shape at the edge portion is facilitated.Type: GrantFiled: April 7, 2022Date of Patent: December 3, 2024Assignees: Samsung Display Co., Ltd., Dowooinsys Co., Ltd.Inventors: Hyungsik Kim, Cheollae Roh, Jang Doo Lee, Beomsoo Kim, Hanggyun Park, Joongsung Lee, Woohyun Jung, Seungjun Yi, Hyungsup Lee, Sunhong Choi
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Patent number: 12152187Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 ?/minute, thereby providing uniform recess top and bottom layers in patterns.Type: GrantFiled: August 13, 2021Date of Patent: November 26, 2024Assignee: ENTEGRIS, INC.Inventors: Eric Hong, SeongJin Hong, WonLae Kim, JeongYeol Yang, SeungHyun Chae, JuHee Yeo
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Patent number: 12146077Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.Type: GrantFiled: December 3, 2021Date of Patent: November 19, 2024Assignee: FUJIMI INCORPORATEDInventors: Yasuaki Ito, Hiroyuki Oda, Naoto Noguchi
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Patent number: 12150386Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.Type: GrantFiled: August 16, 2022Date of Patent: November 19, 2024Assignee: FUJIFILM CORPORATIONInventors: Keeyoung Park, Atsushi Mizutani
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Patent number: 12131911Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.Type: GrantFiled: June 20, 2022Date of Patent: October 29, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Che-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu
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Patent number: 12128522Abstract: A method includes supplying slurry onto a polishing pad; holding a wafer against the polishing pad with a piezoelectric layer interposed vertically between a pressure unit and the wafer; exerting a force on the piezoelectric layer using the pressure unit to make the piezoelectric layer directly press the wafer; generating, using the piezoelectric layer, a first voltage corresponding to a first portion of the wafer and a second voltage corresponding to a second portion of the wafer; tuning the force exerted on the piezoelectric layer according to the first voltage and the second voltage; and polishing, using the polishing pad, the wafer.Type: GrantFiled: July 22, 2022Date of Patent: October 29, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shu-Bin Hsu, Ren-Guei Lin, Feng-Inn Wu, Sheng-Chen Wang, Jung-Yu Li
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Patent number: 12117630Abstract: The present disclosure generally relates to display systems, and more particularly to augmented reality display systems and methods of fabricating the same. A method of fabricating a display device includes providing a substrate comprising a lithium (Li)-based oxide and forming an etch mask pattern exposing regions of the substrate. The method additionally includes plasma etching the exposed regions of the substrate using a gas mixture comprising CHF3 to form a diffractive optical element, wherein the diffractive optical element comprises Li-based oxide features configured to diffract visible light incident thereon.Type: GrantFiled: March 11, 2020Date of Patent: October 15, 2024Assignee: MAGIC LEAP, INC.Inventors: Mauro Melli, Christophe Peroz, Melanie Maputol West
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Patent number: 12119230Abstract: There is provided a wet etching method including an etchant supply step of supplying an etchant from an etchant supply nozzle to a to-be-etched surface of a workpiece, an etching step of etching the to-be-etched surface with the etchant remaining on the to-be-etched surface, and an etchant removal step of, after performing the etching step, removing the etchant, which still remains on the resulting etched surface, from the etched surface. The etchant supply step, the etching step, and the etchant removal step are repeated a plurality of times in this order.Type: GrantFiled: April 2, 2021Date of Patent: October 15, 2024Assignee: DISCO CORPORATIONInventors: Kazuma Sekiya, Takashi Ono, Daigo Shitabo
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Patent number: 12110436Abstract: The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.Type: GrantFiled: September 30, 2020Date of Patent: October 8, 2024Assignee: Versum Materials US, LLCInventors: Chung-Yi Chang, Wen Dar Liu, Yi-Chia Lee