Abstract: A method for forming a metal containing feature includes performing a deposition process, the deposition process comprising conformally depositing an over layer on top surfaces of a patterned mandrel layer and over a spacer layer on sidewalls of the patterned mandrel layer, and performing an etch process, the etch process comprising removing the over layer from the top surfaces of the patterned mandrel layer and shoulder portions of the spacer layer, and removing the shoulder portions of the spacer layer, using a fluorine containing etching gas.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material is received. A plurality of first main etches are performed to the semiconductor structure for a plurality of first durations under the first etching chemistry. A plurality of pumping operations are performed for a plurality of pumping durations, each of the pumping operations being prior to each of the first main etches. Each of the first durations is in a range of from about 1 second to about 2.5 seconds.

Abstract: A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 ?m and 250 ?m. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 ?m to less than 1 ?m. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.

Abstract: A semiconductor device forming method that includes a step for forming a coating layer and a step for performing etching. In the step for forming a coating layer, the coating layer is formed. The coating layer selectively covers a portion of a recess provided in a stacked structure supported by a base member. The portion of the recess is located on a front surface side of the recess. In the step for performing etching, a deep portion, which is deeper than the coating layer, of the recess is etched with a chemical liquid so as to widen a diameter of the deep portion.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

Abstract: A method of manufacturing a window and a window manufactured by the same are provided. A method of manufacturing a window includes laser cutting a base glass into a preliminary window using first laser light, irradiating, with second laser light, a point spaced apart from an edge of the preliminary window at a first distance, and providing a window including a flat portion and an edge portion by wet etching the preliminary window irradiated with the second laser light. A method of manufacturing a window having a chamfer shape at the edge portion is facilitated.

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 ?/minute, thereby providing uniform recess top and bottom layers in patterns.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A method includes supplying slurry onto a polishing pad; holding a wafer against the polishing pad with a piezoelectric layer interposed vertically between a pressure unit and the wafer; exerting a force on the piezoelectric layer using the pressure unit to make the piezoelectric layer directly press the wafer; generating, using the piezoelectric layer, a first voltage corresponding to a first portion of the wafer and a second voltage corresponding to a second portion of the wafer; tuning the force exerted on the piezoelectric layer according to the first voltage and the second voltage; and polishing, using the polishing pad, the wafer.

Abstract: The present disclosure generally relates to display systems, and more particularly to augmented reality display systems and methods of fabricating the same. A method of fabricating a display device includes providing a substrate comprising a lithium (Li)-based oxide and forming an etch mask pattern exposing regions of the substrate. The method additionally includes plasma etching the exposed regions of the substrate using a gas mixture comprising CHF3 to form a diffractive optical element, wherein the diffractive optical element comprises Li-based oxide features configured to diffract visible light incident thereon.

Abstract: There is provided a wet etching method including an etchant supply step of supplying an etchant from an etchant supply nozzle to a to-be-etched surface of a workpiece, an etching step of etching the to-be-etched surface with the etchant remaining on the to-be-etched surface, and an etchant removal step of, after performing the etching step, removing the etchant, which still remains on the resulting etched surface, from the etched surface. The etchant supply step, the etching step, and the etchant removal step are repeated a plurality of times in this order.

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

Abstract: The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

Abstract: Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant including a hydrofluorocarbon or fluorocarbon compound and an additive compound, the substrate having a film disposed thereon and a pattered mask layer disposed on the film; activating a plasma to produce an activated hydrofluorocarbon or fluorocarbon compound and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compound and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

Abstract: Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.

Abstract: A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine; said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved; wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

Abstract: A method for patterning a surface of a substrate includes applying a liquid on the surface of the substrate, wherein an apparent viscosity of the liquid depends on a field strength applied to the liquid; applying a field to the liquid, wherein a field strength of the applied field is spatially varied in the liquid in a direction parallel to the surface of the substrate, thereby generating a spatially varied apparent viscosity distribution in the liquid in response to the applied field; and patterning the surface of the substrate by subjecting the surface to a surface modifying process, while maintaining the field and using portions of the liquid having apparent viscosities higher than a predetermined value as a mask; wherein the surface modifying process comprises removing material of the surface of the substrate and/or depositing material on the surface of the substrate.