Abstract: A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes partially removing the second layer. The method includes performing an etching process to partially remove the stop layer and an upper portion of the first layer, wherein protrusion structures are formed over a lower portion of the first layer after the etching process, and the protrusion structures include the stop layer and the upper portion of the first layer remaining after the etching process. The method includes removing the protrusion structures.

Abstract: Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as siloxane derivatives of amino acids that have surface-active properties.

Abstract: The present disclosure relates to the technical field of etching. More specifically, the present disclosure relates to an etching solution and an application thereof. A preparation raw material of the etching solution includes at least one oxidant, at least one stabilizer, and deionized water. Through the combined action of hydrogen peroxide and stabilizer, the etching solution of the present disclosure has the good stability, the longer service life, the faster etching rate and the better stability of the etching rate, and the etching solution of the present disclosure has a good etching effect on a titanium-series metal.

Abstract: A method of processing a substrate that includes: positioning a substrate in a plasma processing chamber, the substrate including a layer stack of alternating layers of silicon (Si) layers and silicon-germanium (SiGe) layers, the substrate including a recess that exposes sidewalls of the Si layers and sidewalls of the SiGe layers; flowing a first process gas into the plasma processing chamber; while flowing the first process gas, pulsing a second process gas into the plasma processing chamber at a pulsing frequency; while flowing the first process gas and pulsing the second process gas, applying power to a source electrode and a bias electrode of the plasma processing chamber to generate a plasma in the plasma processing chamber; and exposing the substrate to the plasma to laterally etch a portion of the Si layers selectively to the SiGe layers and form indents between the SiGe layers.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A method of manufacturing a floor board comprises the steps of supplying a panel, printing a curable substance or surface removing substance onto the panel in a predefined pattern for creating an elevation on the panel at the pattern or removing a portion of the surface of the panel at the pattern, respectively, and curing the curable substance or removing any reaction products of the surface removing substance and the panel.

Abstract: An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.

Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Etchant solutions, pretreatment and methods for etching electroless nickel on metallic materials are provided herein. More specifically, etchant solutions for selectively removing electroless nickel from the surface of metallic materials containing copper, and optionally as containing stainless steel, methods of etching and pretreatment are provided.

Abstract: Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

Abstract: A pattern forming method is disclosed. The pattern forming method includes buffing a surface of a product containing aluminum, masking at least a part of the buffed surface with an etching resist, etching a part of the buffed surface not masked by the etching resist, removing the etching resist from the surface, and anodizing the surface from which the etching resist is removed.

Abstract: The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.

Abstract: A new formulation of treatment baths for the etching of polymers prior to metallization or coating of the polymer using known technologies described in the state of the art, which are based on the use of salts and/or complexes of the Cr(III) cation, where the formulation includes a salt and/or Cr(III) complex in which the Cr(III) is coordinated to at least one or several mono, bi, tri, tetra, penta, hexadentate or bridging ligands that are coordinated to the chromium by the oxygen, sulfur or nitrogen atom or several of these atoms of the ligands, such that after the polymer piece has been etched with the Etching formulation described above, the metal coating is carried out by means of the application of chemical and electrolyte baths in the case of metallization, or by means of the application of paint or another organic coating.

Abstract: A method is disclosed, which comprises estimating a first value of a parameter of a component, prior to a use of the component in a reactor. In an example, the parameter of the component is to change during the use of the component in the reactor. The component may be treated, subsequent to the use of the component in the reactor. A second value of the parameter of the component may be estimated, subsequent to treating the component. The second value may be compared with the first value, where a reuse of the component in the reactor is to occur in response to the second value being within a threshold range of the first value.

Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Abstract: A method and an apparatus of plasma-assisted semiconductor processing is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power including a first target frequency to multiple stations to thereby generate a plasma in the stations, wherein the RF power is distributed according to a RF power parameter configured to reduce station to station variations; c) tuning an impedance matching circuit for a first station included in the multiple stations while distributing RF power to the first station by: i) measuring a capacitance of a capacitor in the impedance matching circuit without disconnecting the capacitor from the impedance matching circuit; and ii) adjusting, according to the capacitance measured in (i) and the RF power parameter, a capacitance of the capacitor; and d) performing a semiconductor processing operation on the substrate at each station.

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.