Abstract: A method of fabricating a shadow mask includes depositing a chrome etch mask layer on a substrate. The substrate includes a silicon handle wafer, a buried oxide layer, a single crystal silicon layer, and a backside oxide layer. The method also includes forming a patterning layer including a pattern on the chrome etch mask layer, etching the chrome etch mask layer using the patterning layer to transfer the pattern in the patterning layer into the chrome etch mask layer, and etching the pattern of the chrome etch mask layer into the single crystal silicon layer. The method further includes patterning the backside oxide layer, etching the silicon handle wafer using the patterned backside oxide layer, removing the buried oxide layer, and removing remaining portions of the patterned chrome etch mask layer and the patterning layer.

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A method for manufacturing a peeled substrate has a laser condensing step for focusing laser light at a prescribed depth from the surface of a substrate and a positioning step for moving and positioning a laser condenser relative to the substrate, the method involving forming a processed layer in the substrate. The laser condensing step includes a laser light adjustment step in which a diffraction optical element is used to branch the laser light into a plurality of branched laser beams, and at least one of the branched laser beams is branched such that the intensity thereof differs from the other branched laser beams. The processed layer is elongated using the branched laser beam having a relatively high intensity among the plurality of branched laser beams to process the substrate, and the elongation of the processed layer is restrained using the branched laser beams having a relatively low intensity.

Abstract: Method for stripping a coating from a coated surface of a substrate, wherein the coating is stripped in an aqueous alkaline solution, characterized in that the method comprises following steps:—preparing the coated substrate to be decoated by providing the substrate with a strippable coating by depositing a coating comprising one or more layers, wherein one layer comprising aluminum is deposited directly on the substrate surface to be decoated and—introducting the substrate to be decoated in the aqueous alkaline solution, thereby conducting a chemical stripping of the coating from the substrate, whereas the aqueous alkaline solution comprises NaOH in a concentration in weight percentage from 30 wt. % to 50 wt. %.

Abstract: A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material and a second material is revived. The first material has a first incubation time to a first etching chemistry. The second material has a second incubation time to the first etching chemistry. The first incubation time is shorter than the second incubation time. A first main etch to the semiconductor structure for a first duration by the first etching chemistry is performed. The first duration is greater than the first incubation time and shorter than the second incubation time.

Abstract: A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer.

Abstract: In some methods, a first recess is etched in a selected region of a substrate. A first polymer liner is formed on sidewalls and a bottom surface of the first recess. A portion of the first polymer liner is removed from the bottom surface, and a remaining portion of the first polymer liner is left along the sidewalls. The first recess is deepened to establish a second recess while the remaining portion of the first polymer liner is left along the sidewalls. A first oxide liner is formed along the sidewalls and along sidewalls and a bottom surface of the second recess. A portion of the first oxide liner is removed from a bottom surface of the second recess, while a remaining portion of the first oxide liner is left on the sidewalls of the first recess and the sidewalls of the second recess.

Abstract: A polishing method includes polishing a substrate with a CMP polishing liquid. The substrate includes a barrier metal, a metal film, and a silicon dioxide film. The metal film includes one or more of copper, copper alloy, copper oxide, or copper alloy oxide. The CMP polishing liquid includes abrasive particles, a metal oxide dissolving agent, an oxidizing agent, a water-soluble polymer, and an alkali metal ion. The pH of the CMP polishing liquid is 7.0 to 11.0. Surface potentials of the abrasive particles and the metal film have the same sign and a product of the surface potential (mV) of the abrasive particles and the surface potential (mV) of the metal film is 300 to 980 mV2 upon polishing the substrate with the CMP polishing liquid.

Abstract: A semiconductor device and its fabrication method are provided. The method includes providing a layer to be etched; forming a first mask layer on the layer to be etched; forming a first trench and a second trench in the first mask layer; forming a blocking layer over the first mask layer, where a portion of the blocking layer is formed in a first portion of the first trench and a first portion of the second trench; forming a first dividing layer in a first blocking opening to divide the first trench along a first direction; when forming the first dividing layer, forming second dividing layers on two sidewalls of a second blocking opening and arranged along the first direction, where the second dividing layers divide the second trench along the first direction; and after forming the first dividing layer and the second dividing layers, removing the blocking layer.

Abstract: A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.

Abstract: The present application discloses a manufacturing method of a display panel and a display panel. The manufacturing method includes the steps: forming a color filter layer on a substrate; confirming a color filter-to-be-stripped in the color filter layer; and stripping the color filter-to-be-stripped by using a selected stripping liquid; the color filter layer includes a first color filter, a second color filter and a third color filter; and the color filter-to-be-stripped includes one or two of the first color filter, the second color filter and the third color filter, and the method of stripping the color filter-to-be-stripped by the selected stripping liquid includes: letting the color filter-to-be-stripped react with the selected stripping liquid, and stripping the color filter-to-be-stripped by the selected stripping liquid, and forming a protective layer on the surface of the color filters except the color filter-to-be-stripped.

Abstract: A method for forming a semiconductor structure is provided. The method includes: forming first and second hard mask layers and a target layer on a substrate; patterning the second hard mask layer to form patterned second hard masks including a second wide mask and second narrow masks; and forming spacers on sidewalls of the second wide mask and the second narrow masks. Then, a photoresist layer is formed to cover the second wide mask and the spacers on the sidewalls of the second wide mask. The second narrow masks and the photoresist layer are removed. And, the first hard mask layer is etched with the spacers and the second wide mask together as a mask to form patterned first hard masks on the target layer, wherein the spacers define a first line width, and the second wide mask and the pair of spacers define a second line width.

Abstract: Provided is an etching method performed in a substrate-processing apparatus having: a first electrode on which a substrate is placed; and a second electrode facing the first electrode, the method comprising: a first step for introducing a first gas and halfway etching a target film into a pattern of a predetermined film on the target film formed on the substrate; a second step for introducing a second gas including Ar gas, H2 gas, and deposition gas and applying DC voltage to the second electrode to form a protective film, the second step being performed after the first step; and a third step for introducing a third gas and etching the target film, the third step being performed after the step for forming the protective film.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard mask that is an uppermost MTJ layer. Thereafter, the hard mask sidewall is etch transferred through the remaining MTJ layers including a reference layer, free layer, and tunnel barrier between the free layer and reference layer. The etch transfer may be completed in a single RIE step that features a physical component involving inert gas ions or plasma, and a chemical component comprised of ions or plasma generated from one or more of methanol, ethanol, ammonia, and CO. In other embodiments, a chemical treatment with one of the aforementioned chemicals, and a volatilization at 50° C. to 450° C. may follow an etch transfer through the MTJ stack with an ion beam etch or plasma etch involving inert gas ions.

Abstract: A method of manufacturing a floor board comprises the steps of supplying a panel, printing a curable substance or surface removing substance onto the panel in a predefined pattern for creating an elevation on the panel at the pattern or removing a portion of the surface of the panel at the pattern, respectively, and curing the curable substance or removing any reaction products of the surface removing substance and the panel.

Abstract: A substrate processing apparatus includes a chamber body having an upper opening, a chamber lid part having a lower opening, and a shield plate arranged in a lid internal space of the chamber lid part. The radial dimension of the shield plate is greater than that of the lower opening. Covering the upper opening of the chamber body with the chamber lid part forms a chamber that internally houses a substrate. In the substrate processing apparatus, before the substrate is conveyed and the chamber is formed, the lid internal space of the chamber lid part is filled with the gas supplied from a gas supply part, in a state in which the shield plate overlaps with the lower opening. This allows the chamber to be quickly filled with the gas to achieve a desired low oxygen atmosphere after the formation of the chamber.

Abstract: The invention relates to producing a relief image on a metal base. The present method includes forming a resist pattern on a surface of a base and etching the sections of the metal which are not covered by the resist. In the present method, copper or an alloy thereof is deposited as a resist on a metal base having an electrode potential that is more negative than the electrode potential of copper, and etching is carried out in a solution that dissolves the parts not covered by the resist primarily as a result of a contact exchange reaction between the metal of the base and the copper ions. The invention makes it possible to improve the quality of the resulting image by means of reducing etchback of a metal base via pores of a resist, and to reduce the cost of producing products.