Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The hydrogen-containing precursor may be flowed at a flow rate of at least 2:1 relative to the flow rate of the fluorine-containing precursor. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material or a metal. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material or the metal.

Abstract: A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.

Abstract: A method of removing a phosphorus-doped silicon film doped with phosphorus, includes: forming a silicon oxide film by oxidizing the phosphorus-doped silicon film in a substrate including the phosphorus-doped silicon film and an undoped silicon film which is not been doped with the phosphorus, wherein at least the phosphorus-doped silicon film is exposed to a surface of the substrate; and selectively etching and removing the silicon oxide film from the silicon oxide film and the undoped silicon film.

Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a to-be-etched layer; forming a first sacrificial film on the to-be-etched layer; and forming a plurality of discrete first sidewall spacers and sidewall trenches on the first sacrificial film. Each sidewall trench is located between two adjacent first sidewall spacers; the first sidewall trenches include a first sidewall trench and a second sidewall trench, and a width of the second sidewall trench is greater than that of the first sidewall trench. The method also includes forming a second sidewall spacer in the first sidewall trench to fill the first sidewall trench; and etching the first sacrificial film using the first sidewall spacers and the second sidewall spacer as an etching mask to form a plurality of discrete first sacrificial layers on the to-be-etched layer.

Abstract: A plasma processing apparatus includes a plasma chamber that accommodates a substrate having a film including a side wall surface and a bottom surface that define an opening; and a controller that controls a process on the substrate in the plasma chamber. The controller includes a sequencer that performs a sequence including forming a precursor layer on the opening of the film; and generating a plasma to form a protective film on the side wall surface of the opening of the film from the precursor layer and to etch the bottom surface of the opening of the film. The controller simultaneously forms the protective film on the side wall surface of the opening of the film and etches the bottom surface of the opening of the film.

Abstract: The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

Abstract: An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

Abstract: A web support with a high degree of patterning freedom and excellent durability, a production method therefor, and a patterning method. The web support is used when applying a pattern to a nonwoven substance by jetting a high-pressure water stream on a web. The web support production method comprises: a step of preparing a flat metal base material; a step for forming, by etching, a first water conduction hole and second water conduction hole that pass through the front surface of the base material to the back surface, and a recess on the front surface of the base material that includes the first water conduction hole and that corresponds to the pattern; and a step for forming the base material into a cylindrical main body section by welding the edges of the base material to each other.

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

Abstract: The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.

Abstract: A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.

Abstract: A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine; said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved; wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

Abstract: An etching solution for selectively performing an etching process on a compound represented by General Formula Si1-xGex, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Abstract: An inhibited hydrofluoric acid aqueous composition, said composition comprising: hydrofluoric acid in solution; and a weak base selected from the group consisting of: lysine, arginine, histidine, glutamine, asparagine, tryptophan, and tyrosine; wherein said weak base and hydrofluoric acid are present in a molar ratio of at least 1:1. Also disclosed is a mud acid using this inhibited acid composition.

Abstract: An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.