Abstract: Silicon-containing polymers comprising recurring units of formula (1) are novel wherein R1 is a single bond or alkylene, R2 is hydrogen or alkyl, R3, R4 and R5 are alkyl, haloalkyl, aryl or silicon-containing group, R6 is hydrogen, methyl, cyano or —C(?O)OR8 wherein R8 is hydrogen, alkyl or acid labile group, R7 is alkyl, —NR9R10 or —OR11 wherein R9, R10 and R11 are hydrogen or alkyl, a and b are positive numbers satisfying 0<a+b?1. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

Abstract: Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.

Abstract: A material is deposited on a substrate by depositing a liftoff layer overlying the substrate, thereafter depositing a hard-mask layer overlying the liftoff layer, thereafter depositing an image layer in registry with a retained portion of the hard-mask layer, leaving a nonretained portion of the hard-mask layer which is not in registry with the image layer. The method further includes removing the nonretained portion of the hard-mask layer, removing at least a part of the thickness of the image layer, and removing a nonretained portion of the liftoff layer, which may include an undercut under the hard-mask layer. The deposited material is deposited onto the substrate from a source, and the retained portion of the hard-mask layer and any part of the liftoff layer remaining between the hard-mask layer and the substrate is thereafter removed.

Abstract: Radiation sensitive compositions for use in producing a patterned image on a substrate comprise: a) a first photoacid generator compound which comprises one or more compounds of the structure (A); b) a second photoacid generator compound which comprises one or more compounds of the structure (B); c) a polymer component comprising an alkali soluble resin component whose alkali solubility is suppressed by the presence of acid sensitive moieties and whose alkali solubility is returned by treatment with an acid and, optionally, heat; wherein said polymer comprises one or more polymers comprising the monomer unit (C); ?and d) a solvent.

Abstract: A novel photoacid generator containing a structure of the following formula (I), wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Z1 and Z2 are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

Abstract: By irradiating a laser beam onto an X-ray film that includes a support layer having disposed thereon an emulsion layer, the emulsion layer is melted, numerous minute air bubbles are generated in the emulsion layer, and the emulsion layer becomes convex, whereby a visible dot pattern is formed. The irradiation time and wavelength of the laser beam are selected so that separation is not generated between the support layer and the emulsion layer. By defocusing and irradiating the laser beam, the X-ray film may substantially uniformly receives energy of the laser beam. Moreover, an undersurface layer may also be formed, and the laser beam may be irradiated onto the undersurface layer to form a dot pattern on the undersurface layer. A device and a method for forming a marking pattern representing identification information on a rolled photosensitive material and cutting the photosensitive material into sheets are disclosed.

Abstract: A microfabrication process for preparing articles in which a precursor article that includes (a) a substrate, (b) a first polymer layer overlying the substrate, (c) a second polymer layer overlying the first polymer layer, (d) a metal hardmask layer overlying the second polymer layer, and (e) a photodefinable layer overlying the metal hardmask layer is subjected to photolithographic imaging, developing, and plasma etching steps to form an article that includes the substrate and portions of the first polymer layer arranged in a pattern corresponding to the pattern of the photomask used for photolithographic imaging.

Abstract: A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.

Abstract: A photo-curable resin composition comprising (A) an organosiloxane-bearing polymer comprising recurring units of formula (1): wherein R1 to R4 are monovalent C1-C8 hydrocarbon, n is an integer of 1-1,000, and X is and having a Mw of 500-200,000, (B) a formalin-modified or formalin-alcohol-modified amino condensate, a phenol compound having on the average at least two methylol or alkoxymethylol radicals, or an epoxy compound having on the average at least two epoxy radicals, (C) a photoacid generator, and (D) a silicon compound of the formula: (R11)mSi(OR12)4?m wherein R11 is monovalent C1-C9 hydrocarbon, R12 is C1-C4 alkyl, m is 0-2, forms cured pattern films having dry etch resistance and improved adhesion to substrates.

Abstract: In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.

Abstract: Disclosed is a method of manufacturing a composite member having a conductive pattern, comprising (1) forming on a surface of an insulating body a photosensitive layer containing both a photosensitive compound forming an ion-exchange group upon irradiation with an energy beam and a crosslinkable compound having a crosslinkable group, (2) forming a pattern of ion-exchange groups by selectively exposing the photosensitive layer to an energy beam so as to form an ion-exchange group in the exposed portion, (3) crosslinking the crosslinkable compound contained in at least the exposed portion of the photosensitive layer, (4) allowing metal ions, or a metal colloid to be adsorbed on the pattern of ion-exchange groups formed by the selectively exposing, and (5) forming a composite member having conductive pattern by depositing a conductive material on the pattern of ion-exchange groups having the metal ions, or the metal colloid adsorbed thereon using an electroless plating.

Abstract: The intermediate layer material composition for a multilayer resist process in the present invention, which is soluble in an organic solvent, excellent in storage stability, and has no problem with regard to a footing shape, a pattern separation and a line edge roughness in patterning an upper resist, and a pattern formation process using the intermediate layer material composition, in which the intermediate layer material composition for a multilayer resist process, comprises a polymer (component A) containing a repeating unit having on a side chain thereof a specific structure containing a silicon atom-oxygen atom bond, and the pattern formation process using the same.

Abstract: A photographic material, comprising a support having thereon at least one yellow, cyan, and magenta color-forming light-sensitive silver halide emulsion layer, and at least one light-insensitive non-color forming hydrophilic colloid layer. At least one cyan emulsion layer contains a cyan dye-forming coupler [C-1] and at least one light-insensitive colloid layer exists between the support and a light-sensitive emulsion layer most adjacent thereto. Also, a photographic material, comprising a transparent support having thereon at least three kinds of light-sensitive hydrophilic colloid layers each containing any of yellow, magenta and cyan dye-forming couplers and containing silver halide grains different from each other in color sensitivity, and at least one light-insensitive hydrophilic colloid layer. Any layer contains a compound [XI], at least one colloid layer contains a solid fine particle dispersion of a dye [I], and said material has a film pH from 4.6 to 6.4.

Abstract: In a method of forming a patterned thin film, a first film to be patterned and a peelable film are sequentially formed on a base layer, and an undercut mask is then formed thereon. Then, using of the mask, the peelable film and the first film to be patterned are etched selectively to form a first patterned thin film. During the etching, a substance that forms the first film to be patterned deposits to form a deposition film on the peelable film. Then, a film to be patterned is formed over the entire surface. During the formation, a substance that forms the film to be patterned deposits to form another deposition film on the peelable film. The mask and the peelable film are then peeled off to remove the deposition films together.

Abstract: A method for manufacturing a semiconductor wafer uses a reticle having a plurality of spaced apart circuit images of identical patterns or images of a common level of a single integrated circuit formed on the reticle and arranged in columns and rows about its central point. At least one column of spaced apart test images are formed outside of and adjacent an outermost column of circuit images. Radiation is projected through the reticle for exposing the patterns on the reticle onto an underlying wafer. A reticle holder having a pair of shutter elements aligned parallel to the columns of images selectively blocks the projection of radiation through the columns of the test images but are exposed in order to form test circuits on the wafer at selected locations.

Abstract: A thermosensitive recording material having a support, a thermosensitive coloring layer provided on the support and containing a leuco dye and a color developer for developing the leuco dye upon application of heat, and a protective layer provided on the thermosensitive coloring layer and containing polyvinyl alcohol having reactive carbonyl groups, a hydrazide compound which crosslinks the polyvinyl alcohol through the reactive carbonyl groups, and a basic filler. The protective layer may be formed by applying a coating composition containing polyvinyl alcohol having reactive carbonyl groups, a hydrazide compound which crosslinks the polyvinyl alcohol through the reactive carbonyl groups, and a basic filler onto a thermosensitive coloring layer provided on a support, and drying the applied coating composition to crosslink the polyvinyl alcohol.

Abstract: During the fabrication of a mask, to substantially avoid systematic deviations from a desired configuration of recesses that will be formed in the mask, the patterning of the mask substrate is carried out in a sequence of subprocesses. The subprocesses are matched to one another such that the deviations that are formed from these subprocesses compensate for one another, so that in this way, error correction is achieved.

Abstract: The invention relates to a polymer obtained by copolymerization of a first comonomer having a group catalytically cleavable by acid, a second comonomer having an anchor group for the subsequent linkage of an amplification agent, and a third comonomer having a carboxyl group being esterified with an alkyl group. It is also possible for one or more carbon atoms in the alkyl group to be replaced by oxygen. The polymer may also include fourth comonomers that include silicon-containing groups. By using the alkyl or alkoxyalkyleneoxy side groups introduced with the third comonomer, the glass transition temperature of the polymer can be reduced so that a photoresist containing the polymer provides a homogeneous polymer film on heating.

Abstract: A negative resist composition comprises: (A) an alkali-soluble resin; (B) a compound capable of generating an acid upon irradiation with a radiation; (C) a crosslinking agent capable of crosslinking by the action of an acid; and (D) a solvent mixture containing: at least one solvent selected from the group A below; and at least one selected from the group consisting of the group B below and the group C below: group A: a propylene glycol monoalkyl ether carboxylate; group B: a propylene glycol monoalkyl ether, an alkyl lactate, an acetic ester, a chain ketone and an alkyl alkoxypropionate; group C: a ?-butyrolactone, an ethylene carbonate and a propylene carbonate.

Abstract: There are provided steps of forming a lower resist layer on a patterning objective layer, forming an organic intermediate layer made of organic material, that contains no Si—O bond in its structure, on the lower resist layer, forming an upper resist layer made of alicyclic resin on the organic intermediate layer, forming a pattern by exposing/developing the upper resist layer, transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask, transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask, and etching the patterning objective layer while using the lower resist layer as a mask.