Abstract: An optical isolator is fabricated upon a lead frame having an LED section which is rotated 180.degree. to position the LED over the photodiode. Prior to rotation both the LED and the photodiode attachment portions (81,83) of the leads are down set a predetermined amount to fix the size of the isolation gap between the LED and the photodiode. Dielectric sheets are attached to the outer surfaces of the LED and photodiode leads and an optically transmissive resin is injected therebetween to form a light guide and to encapsulate the LED and photodiode dice and their associated bond wires. In an alternate embodiment a sheet is attached to the outer surface of one lead and a dielectric sheet thereagainst is positioned at a tilted angle between the LED and the photodiode.

Abstract: An immunotherapy agent for the treatment of allergy composed of an allergen encapsulated in or covalently bound to a liposome is disclosed. Use of the agent in immunotherapy results in enhanced IgG production and reduced IgE production.

Abstract: This invention is directed to a process of producing semiconductor devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass, as well as a process for production of such targets. The phosphosilicate glass containing 1-15 mole percent P.sub.2 O.sub.5 is produced by a sol/gel technique which involves mixing of a fumed silica, with a surface area of 50-400 m.sup.2 /g, preferably about 200 m.sup.2 /g, with phosphoric acid and water to form a sol with 20-55 wt. % silica, allowing it to gel, drying at ambient conditions, dehydrating at about 650.degree. C. in an atmosphere of an inert gas and chlorine and fluorine containing gases, heating up at a certain rate of from 100.degree. to 180.degree. C. per hour to a peak sintering temperature below 1200.degree. C. and cooling so as to produce amorphous and transparent glass suitable for use as a target. The glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc.

Abstract: A reusable semiconductor package such as a ceramic pin grid array package is described. The package includes a housing having a bottom wall for supporting a semiconductor die. The housing defines therein a cavity which is open at the top and which communicates with the environment through a hole in the bottom wall. A disposable base suitable for supporting a semiconductor chip is adapted to be placed on top of the bottom wall. The base covers the hole entirely when it is used to support the chip. The base is then sealingly attached to the housing in a manner that it can be removed from the housing without any substantial damage to the housing. When the package is to be reused for a different chip, the base can be easily removed by applying a force through the hole through the bottom wall. The original die and base may be simply disposed and a new die on a new base be put in their place.

Abstract: Well cement slurries, water soluble dispersants therefor and methods of producing the dispersants are provided. The dispersants prevent high initial cement slurry viscosities and friction losses when the slurries are pumped, and are comprised of water soluble sulfoalkylated naphthols in which the naphthol molecules are alkylated with at least one group having the formula --C(R).sub.2 --SO.sub.3 M wherein R is selected from hydrogen and alkyl radicals containing from 1 to 5 carbon atoms and M is an alkali metal.

Abstract: A substrate for attaching electrical devices having an interconnect wiring structure and a support for the interconnect, the support having a number of vias, or throughholes, extending therethrough and electrically connected to the interconnect. The substrate allows for attachment of the electrical devices on the side of the support opposite the interconnect at the vias, rather than on the interconnect itself. By so doing, the chips can be packed more density since the area between the chips normally reserved for engineering change pads, test pads and the like is not required, these functions being performed on the interconnect on the opposite side of the substrate.

Abstract: The present invention proposes a method of manufacturing semiconductor devices from an elongated leadframe by using a differential overlapping apparatus. The leadframe has longitudinally spaced pairs of staggered leads. The overlapping apparatus functions to deform the leadframe during transfer thereof, so that each pair of staggered leads assumes the same longitudinal position but displaced away from each other perpendicularly to a plane containing the leadframe. The leadframe is further deformed to cause the pair of leads to move toward each other, so that a semiconductor chip is sandwiched between the pair of leads for bonding.

Abstract: Amorphous silicas suitable for use as abrasives in transparent toothpastes can be prepared by a precipitation route. These silicas are distinguished by having a BET surface area of 420 to 550 m.sup.2 /g, a weight mean particle size of 5 to 20 micron, a perspex abrasion value of 15 to 28, a mean pore diameter from 3 to 8 nm and a transmission of at least 70% in the R1 range from 1.444 to 1.460.

Abstract: A semiconductor device in a plastic or ceramic package contains at least one silicon die on each side of a central die pad of a single metal frame, thus allowing a substantial space saving on the printed circuit assembly card.The bonding of the silicon dies and the soldering of the connecting wires are performed on both sides of the frame by emplying a special slotted clamp fixture inside which a strip of frames is clamped during these assembly operations and relative quality control operations.

Abstract: An impervious, virgin soda-lime glass-based ceramic article is disclosed. The impervious ceramic article of the present invention is prepared from a raw batch formulation including virgin soda-lime glass cullet and clay. The article of the present invention has aesthetic and physical properties which are precisely reproducible. A raw batch formulation for making an impervious soda-lime glass-based ceramic article is also disclosed. In a preferred embodiment, the raw batch formulation includes greater than 60 to about 85 weight percent virgin soda-lime glass cullet; from about 15 to about 40 weight percent clay; and from about 0 to about 10 weight percent flint. A method for making an impervious virgin soda-lime glass-based ceramic article is further disclosed.

Abstract: A method of producing a high purity silica powder which can be fused to form transparent, bubble-free particles. An ammonium fluosilicate solution is purified preliminarily by removing colloidal-sized silica onto which impurities in the solution have been adsorbed. The high purity powder is produced by ammoniation of an unsaturated aqueous solution of ammonium fluosilicate. Silica powder produced is filtered, washed, and dried before fusion. Additional pre-fusion treatments such as washing, hydrothermal leaching, calcination, and a combination thereof, may be utilized to ensure that the concentration of volatile material is low.

Abstract: An apparatus for producing a semiconductor device includes a dust-proof cover which covers a dust-generating portion in the apparatus such as a mold for effecting resin-molding of the semiconductor device composed of a lead frame and semiconductor chips wire- and die-bonded thereto, and a dust collecting device for collecting dust which is suspended by the air inside the dust-proof cover.

Abstract: A diphasic ceramic compact, sintered without pressure, is prepared for use in a combination of two sliding or sealing elements with improved control of the bearing surface portion of the functional surface; the compact contains44 to 89.5 wt.-% of .alpha.- silicon carbide,0.5 to 6 wt.-% of boron carbide, and10 to 50 wt.-% of metal boridesfrom groups 4b to 6b of the Periodic Table of Elements, and the metal boride content is increased at the functional surface.

Abstract: Integrated circuits with vertical isolated trenches are radiation hardened by providing vertical gate segments, preferably, of doped polycrystalline silicon, in the trenches and connected at the bottom of the trenches to a region of the same conductivity type. The surface devices may be complementary and the vertical gates may also be complementarily doped. A method of fabrication is described for a single crystal wafer, as well as SOI.

Abstract: Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress.

Abstract: The invention relates to a method of rendering a soil or another material like a mortar, a binder, or a concrete impervious by injecting it with a silica solution. A finely ground powdered compound containing calcium with a solubility in water of between approximately 0.01 g/l and approximately 2 g/l is mixed into the silica solution, which has a ratio of SiO.sub.2 to Na.sub.2 O of between 1 and 1.3, before injection.

Abstract: A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.

Abstract: A method is provided of producing a self-supporting ceramic composite structure having one or more encasement members, such as an encasing steel sleeve, joined to it by growth of the ceramic material to engagement surface(s) of the encasement member(s). A parent metal is contacted with a body of filler which is encased by the encasement member(s). The resulting assembly is heated to melt and oxidize the parent metal, e.g., aluminum, to form a polycrystalline material comprising an oxidation reaction product which grows through the body of filler and stops at the engagement surface(s) of the encasement member(s) which thereby determines the surface geometry of the grown ceramic matrix. Upon cooling, the encasement member(s) is shrink-fitted about the ceramic composite body. The invention also provides the resultant articles, for example, a ceramic composite body having a stainless steel member affixed thereto.

Abstract: A method of forming a passivation film for protection of circuits and/or curcuit elements on semiconductor chips, IC chips, LSI chips, VLSI chips or microcomputer, wherein the resist film used in patterning the passivation film is employed as part of the passivation film after being subjected to post-baking, and the upper layer of the passivation film is made of a material selected from the group consisting of a light-sensitive polyimide, silicon resin, epoxy resin and silicon ladder polymer.

Abstract: Production of mono- or multimodal lightwave guides from special substrate glasses of the glass system SiO.sub.2 --B.sub.2 O.sub.3 --Al.sub.2 O.sub.3 -- K.sub.2 O--F.sup.-, with partial exchange of the Li.sup.+, Na.sup.+, and/or K.sup.+ ions present in the glass against Cs.sup.+ ions, the substrate glasses having the following compositions (in mol.-%): SiO.sub.2 45-72, B.sub.2 O.sub.3 8-25, Al.sub.2 O.sub.3 1-25, Li.sub.2 O 0-1, Na.sub.2 O 0-2, K.sub.2 O 6-18, MO 0-1 (MO=MgO, CaO, SrO, BaO, ZnO, PbO), in which a portion of the O.sup.- ions present in the glass are replaced by 1-15 mol % F.sup.- ions.