Abstract: In an acoustic wave element of the present invention, a first imaginary line connecting end portions of the plurality of first electrode fingers in the IDT electrode on the second bus bar side and a second imaginary line connecting end portions of the plurality of second electrode fingers in the IDT electrode on the first bus bar side are within ranges of 2 degrees<?A?10 degrees and 2 degrees<?B?10 degrees where an angle formed by the first imaginary line and the propagation direction is the first inclination angle ?A and an angle formed by the second imaginary line and the propagation direction is the second inclination angle ?B.

Abstract: A longitudinally coupled resonator-type surface acoustic wave filter includes a low acoustic velocity film and a piezoelectric film stacked over a high acoustic velocity component in which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity of an elastic wave that propagates in the piezoelectric film. IDT electrodes are provided on one surface of the piezoelectric film. The longitudinally coupled resonator-type surface acoustic wave filter uses a SH wave. At least one of the IDT electrodes has a duty factor that is adjusted over an entire length of the one of the IDT electrodes in the direction of elastic wave propagation to suppress a Rayleigh wave spurious response.

Abstract: A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material deposited on a facial surface of the element. In one instance, the resonance of the element can be adjusting by using a feedback loop to control annealing of the deposited film.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, support layers, and a cover layer. A distance from a first end of a first partition-support layer to one of the outer-periphery-frame support layers closest to the first end is smaller than a distance from a second end of the first partition-support layer to one of the outer-periphery-frame support layers closest to the second end, and a distance from a first end of a second partition-support layer to one of the outer-periphery-frame support layers closest to the first end is larger than a distance from a second end of the second partition-support layer to one of the outer-periphery-frame support layers closest to the second end.

Abstract: An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

Abstract: The present invention relates to a surface acoustic wave filter device with floating units. The surface acoustic wave filter device comprises a piezoelectric substrate, at least one interdigitated transducer configuration and at least one floating unit. The interdigitated transducer configuration comprises a plurality of interdigitated transducer units disposed on the piezoelectric substrate. The floating unit is disposed between adjacent interdigitated transducer units, and covers partial region of adjacent interdigitated transducer units to reduce the BAW scattering of the surface acoustic wave filter device, and can be used to improve the amplitude and phase balances of the surface acoustic wave filter devices.

Abstract: A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof.

Abstract: Surface acoustic wave (SAW) filters and methods of fabricating SAW filters are disclosed. A filter includes a piezoelectric wafer having a thickness within one of a plurality of noncontiguous thickness ranges that define piezoelectric wafers upon which filter circuits meeting predetermined requirements can be fabricated according to a predetermined design using a predetermined fabrication process, and a filter circuit fabricated on the piezoelectric substrate according to the predetermined design using the predetermined fabrication process.

Abstract: A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.

Abstract: Acoustic wave device includes: a piezoelectric substrate; a first IDT located on the piezoelectric substrate; and a second IDT located on the piezoelectric substrate and connected in series to the first IDT, wherein the first IDT and the second IDT share a single common bus bar as a first bus bar of two bus bars of the first IDT and a first bus bar of two bus bars of the second IDT, and the common bus bar has a width not more than two times a wavelength of an acoustic wave propagating through the first and second IDTs, the common bus bar connects to no dummy electrode finger facing a tip of an electrode finger connected to a second bus bar of the two bus bars of the first IDT and the second IDT across a gap.

Abstract: A ladder-type filter includes: one or more series resonators connected in series between an input terminal and an output terminal; two or more parallel resonators connected in parallel between the input terminal and the output terminal; a first inductor connected in series between at least two nodes, each of the at least two nodes being located between a corresponding parallel resonator of at least two parallel resonators of the two or more parallel resonators and ground; and a first capacitor connected in series with the first inductor between the at least two nodes.

Abstract: In one embodiment, filter circuitry includes a series acoustic resonator between first and second nodes. A main series resonance is provided between the first node and the second node at a main resonance frequency through the series acoustic resonator. A compensation circuit includes first and second inductors coupled in series between the first node and the second node, wherein the first inductor and the second inductor are negatively coupled with one another and a common node is provided between the first and second inductors. The compensation circuit also includes first and second shunt acoustic resonators, which are coupled in parallel with one another between the common node and a fixed voltage node. First and second series resonances at first and second resonance frequencies are provided between the first node and the second node through compensation circuit wherein the first and second resonance frequencies are different.

Abstract: A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: A ladder filter includes a series arm resonator and parallel arm resonators including a first parallel arm resonator defining a pass band together with the series arm resonator, and a second parallel arm resonator. Each of dimensions, in an overlap width direction, of gap regions between the overlap width region and first and second busbars in the second parallel arm resonator is larger than a dimension, in the overlap width direction, of a gap region in the first parallel arm resonator. A resonant frequency of the second parallel arm resonator is in a frequency range of not lower than a resonant frequency of the series arm resonator.

Abstract: A multiplexer includes: one or more transmit filters that are connected between an antenna terminal and one or more transmit terminals; one or more receive filters that are connected between the antenna terminal and one or more receive terminals; and a circuit that includes a longitudinally coupled acoustic wave filter and is connected in parallel to one or more series resonators of a first filter that is one of the one or more transmit filters and the one or more receive filters and includes the one or more series resonators and one or more parallel resonators each formed of a piezoelectric thin film resonator, wherein the longitudinally coupled acoustic wave filter is formed of IDTs formed on a chip of a second filter that is another one of the one or more transmit filters and the one or more receive filters and formed of a surface acoustic wave resonator.

Abstract: A device includes an acoustic resonator embedded within an encapsulating structure that at least partially encapsulates the acoustic resonator. The device includes an inductor electrically connected to the acoustic resonator. At least a portion of the inductor is embedded in the encapsulating structure.

Abstract: An acoustic wave filter includes: one or more series resonators connected in series between an input terminal and an output terminal; and parallel resonators connected in parallel between the input terminal and the output terminal and formed of piezoelectric thin film resonators, wherein each of at least two resonators of the parallel resonators includes an additional film having island-shaped patterns or aperture patterns formed at equal pitch intervals in a resonance region in which a lower electrode and an upper electrode face each other across a piezoelectric film, and a pitch interval of the island-shaped patterns or the aperture patterns in the additional film included in one of the at least two resonators differs from a pitch interval of the island-shaped patterns or the aperture patterns in the additional film included in another one of the at least two resonators.

Abstract: An acoustic wave device includes: a substrate; a first acoustic wave resonator and a second acoustic wave resonator located on the substrate; a first wiring line electrically coupled to the first acoustic wave resonator, located on the substrate, and located between the first acoustic wave resonator and the second acoustic wave resonator; and a second wiring line electrically coupled to the second acoustic wave resonator, located on the substrate, located between the first acoustic wave resonator and the second acoustic wave resonator, having an electric potential different from an electric potential of the first wiring line, and having a thickness greater than a thickness of the first wiring line.

Abstract: A BAW device includes a substrate and a piezoelectric element formed on a surface of the substrate. The substrate has a plurality of elastic wave diffusing regions disposed therein for diffusing an elastic wave, the elastic wave diffusing regions being formed by modifying the inside of the substrate with a laser beam.