Abstract: An elastic wave device includes a piezoelectric substrate, first to third IDT electrodes provided on the piezoelectric substrate, a dielectric film provided on the piezoelectric substrate and covering the first to third IDT electrodes, the thickness of the dielectric film in a first region in which the dielectric film covers the first IDT electrodes is different from the thickness of the dielectric film in a second region in which the dielectric film covers the second IDT electrodes and the thickness of the dielectric film in a third region in which the dielectric film covers the third IDT electrodes. The density equivalent thickness of each of the first IDT electrodes and the second IDT electrodes are equal to each other, and the density equivalent thickness of each of the third IDT electrodes is different from the density equivalent thickness of each of the first IDT electrodes and the second IDT electrodes.

Abstract: Aspects of this disclosure relate to a surface acoustic wave filter with an integrated temperature sensor. The integrated temperature sensor can be a resistive thermal device configured as a reflective grating for a surface acoustic wave resonator, for example. A radio frequency system can provide over temperature protection by reducing a power level of a radio frequency signal provided to the surface acoustic wave filter responsive to an indication of temperature provided by the integrated temperature sensor satisfying a threshold.

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract: Filter circuitry uses acoustic resonators to provide a frequency response having a stopband between two passbands. The filter circuitry includes at least one series acoustic resonator coupled between an input node and an output node. A compensation circuit is also coupled between the input node and the output node. The compensation circuit includes a first inductor and a second inductor coupled in series between the input node and the output node. The first inductor and the second inductor are negatively coupled with one another, wherein a common node is provided between the first inductor and the second inductor. A shunt circuit is coupled between the common node and a fixed voltage node. The shunt circuit includes a shunt inductor coupled in series with a plurality of parallel-coupled shunt acoustic resonators.

Abstract: An electronic component includes first and second element substrates, first and second functional element portions, and a support layer that defines a first hollow space over a first functional electrode with the first and second element substrates. A second functional electrode is located on a first main surface of the second element substrate. The electronic component further includes a first conductive layer that is provided on a second main surface of the second element substrate and that is connected to ground potential. The first conductive layer opposes the first functional electrode in the first hollow space. The first conductive layer is overlapped with at least a portion of the first and second functional electrodes in a plan view.

Abstract: A ladder filter in which the pass band is defined by serial arm resonators and first and second parallel arm resonators includes the serial arm resonators, the first and second parallel arm resonators, and a third parallel arm resonator. The third parallel arm resonator is connected in parallel to the first parallel arm resonator, the electrostatic capacitance of the third parallel arm resonator is smaller than that of the first parallel arm resonator, and the anti-resonant frequency of the third parallel arm resonator is positioned outside the pass band of the ladder filter. The anti-resonant frequency of the first parallel arm resonator is positioned at the high frequency side of the anti-resonant frequencies of the second parallel arm resonators.

Abstract: A problem is improved in which a plurality of duplexers has to be used if at least one of a transmission band and reception band for a handheld terminal partially overlaps a frequency band used in another communication system. A duplexer device includes a duplexer configured to include an antenna terminal, a transmission terminal and a reception terminal and to have a specific transmission band and reception band and a band-stop filter connected to at least one of the antenna terminal, the transmission terminal and the reception terminal via a switch and configured to suppress some of at least one of the specific transmission band and reception band in response to the switching of the switch.

Abstract: An acoustic wave device includes: a substrate; an acoustic wave resonator that is formed on the substrate; a first wiring line that is formed on the substrate and is electrically coupled to the acoustic wave resonator; and a second wiring line that is electrically coupled to the first wiring line, at least a part of the second wiring line being formed immediately above the acoustic wave resonator across an air gap.

Abstract: According to various embodiments, there is provided a micro-electromechanical resonator, including a substrate with a cavity therein; and a resonating structure suspended over the cavity, the resonating structure having a first end anchored to the substrate, wherein the resonating structure is configured to flex in a flexural mode along a width direction of the resonating structure, wherein the width direction is defined at least substantially perpendicular to a length direction of the resonating structure, wherein the length direction is defined from the first end to a second end of the resonating structure, wherein the second end opposes the first end.

Abstract: An acoustic wave filter includes a substrate having voids formed therein; a first resonator disposed on one or more of the voids, and a second resonator disposed on other of the voids. A first trimming layer is provided in the first resonator, and a second trimming layer is provided in the second resonator. The second trimming layer is formed of a material having an etching rate for a given etchant different from that of the first trimming layer.

Abstract: A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate, and formed of stacked lower and upper piezoelectric films; lower and upper electrodes facing each other across at least a part of the piezoelectric film; and an insertion film inserted between the lower and upper piezoelectric films, wherein an air gap including a resonance region where the lower and upper electrodes face each other across the piezoelectric film and being larger than the resonance region is located under the lower electrode, and a multilayered film formed of the lower piezoelectric film, the insertion film, and the upper piezoelectric film is located in at least a part of a region located further out than an outer outline of the resonance region, further in than an outer outline of the air gap, and surrounding the resonance region, and is not located in a center region of the resonance region.

Abstract: An elastic wave filter device includes a transmission filter chip, a reception filter chip, and a mounting terminal. The transmission filter chip includes a piezoelectric substrate and an IDT electrode provided on a principal surface of the piezoelectric substrate. The reception filter chip includes a piezoelectric substrate and an IDT electrode provided on a principal surface of the piezoelectric substrate. The transmission filter chip and the reception filter chip are laminated to provide sealed spaces above the IDT electrodes. The mounting terminal is disposed on a side of the reception filter chip opposite to the transmission filter chip side. The elastic wave filter device is mounted such that the reception filter chip faces a mounting surface.

Abstract: A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.

Abstract: A high-frequency filter (10) includes resonators (21, 31, and 32), an inductor (41), and a switch (51). The resonator (21) is connected between a first input/output terminal (P1) and a second input/output terminal (P2). One end of the inductor (41) is connected between the resonator (21) and the first input/output terminal (P1). One end of the resonator (31) is connected to the other end of the inductor (41). The switch (51) selects either a connection portion that connects the inductor (41) and the resonator (31) or the resonator (32) and connects either the connection portion or the resonator (32), which has been selected, to a terminal of the resonator (21) on the side of the second input/output terminal (P2). The switching between the connection modes of the switch (51) changes the circuit configuration of the high-frequency filter (10).

Abstract: An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 ?-cm, and less than approximately 15000 ?-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 ?m to approximately 30.0 ?m, and is substantially without iron (Fe).

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: A MEMS resonator includes a main substrate forming a receiving part at a center of the main substrate; a mass body having one end part and a center part elastically supported by both sides of the main substrate; a driving unit configured at one side of the receiving part on the main substrate and producing a driving force by a voltage applied to both sides of the one end part of the mass body to move a position of the mass body with respect to the main substrate; and a tuning part including a pair of tuning units provided symmetrically with respect to the second elastic member, and having a beam member changing a length of the second elastic member by an actuating operation of each tuning unit to control a frequency.

Abstract: An acoustic wave device includes a substrate comprising one surface on which an acoustic wave generator and at least one ground pad are included; a support component formed of an insulating material and disposed on the substrate along a circumference of the acoustic wave generator; and a shielding member electrically connected to the ground pad and blocking reception or emission of electromagnetic waves at the acoustic wave generator.

Abstract: An elastic wave device includes an elastic wave element that includes first support layers provided on a piezoelectric substrate, a second support layer provided on the piezoelectric substrate so as to surround the first support layers when viewed in a plan view, and a cover member provided on the first support layers and the second support layer, a mounting substrate on which the elastic wave element is mounted, and a mold resin provided on the mounting substrate and sealing the elastic wave element. A thickness of each of the first support layers is less than a thickness of the second support layer. The cover member convexly curves towards the piezoelectric substrate so as to be spaced away from the mounting substrate. A space between the mounting substrate and the cover member is filled with the mold resin.

Abstract: A piezoelectrically transduced resonator device includes a wafer having a substrate, a buried oxide layer formed on the substrate, and a device layer formed on the buried oxide layer, and a resonator suspended within an air gap of the wafer above the substrate, the resonator including a portion of the device layer, a piezoelectric layer, and top and bottom electrodes contacting top and bottom sides of the piezoelectric layer, wherein the portion of the device layer is not directly connected to the wafer and wherein the resonator is configured to move relative to the substrate under electrostatic force to tune the frequency of the resonator device when a direct current voltage is applied between the substrate and the portion of the device layer of the resonator.