Abstract: An elastic wave filter includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a first shield electrode provided on the piezoelectric substrate, a first insulating film laminated on the piezoelectric substrate and extending onto the first shield electrode, a first signal terminal provided on the first insulating film, a second signal terminal provided on the piezoelectric substrate, and a first ground terminal provided on the piezoelectric substrate and connected to a ground potential. The first shield electrode is not electrically connected to the IDT electrode and the first and second signal terminals. The first signal terminal is included in the first shield electrode when seen from above. One of the first signal terminal and the second signal terminal is an output terminal and the other thereof is an input terminal.

Abstract: A high-frequency module includes a SAW filter including a piezoelectric substrate and an electrode pattern provided on the piezoelectric substrate, a module substrate, a resin member covering the SAW filter, and a wiring pattern connected to the electrode pattern and provided on the resin member. The electrode pattern and the wiring pattern are inductively coupled, capacitively coupled, or inductively coupled and capacitively coupled with each other.

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract: A filter device includes a filter chip on a multilayer substrate. The filter chip includes a reception filter chip portion and a transmission filter chip portion, and a reception filter defined by a first bandpass filter includes first and second balanced output terminals. First and second balance wirings connect first and second balanced input pads and first and second balanced output pads provided on a second principal surface of the multilayer substrate. The first and second balance wirings cross each other within the multilayer substrate and are electrically insulated from each other. A portion of a ground conductor is disposed at a region in which the first and second balance wirings overlap, interposed between portions of the first and second balance wirings, and disposed at a different substrate layer.

Abstract: The invention specifies a tunable RF filter which may operate using electroacoustic components and provides good electrical properties despite having a wide tuning range. For this purpose, the RF filter comprises a tunable filter core (AFK) having electroacoustic (EAK) and detunable (AKE) filter elements, and impedance restoration circuits (IWS1, IWS2) for compensating for an impedance change by tuning the filter core.

Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.

Abstract: An elastic wave resonator including a pair of comb-shaped electrodes and a pair of reflector electrodes formed on a piezoelectric substrate. In one example, the pair of comb-shaped electrodes includes first and second overlapping regions in which electrode fingers of the comb-shaped electrodes interdigitate, the second overlapping region being provided on both outside edges of the first overlapping region in an overlapping width direction, an overlapping width of the first overlapping region being greater than an overlapping width of the second overlapping region, the pair of comb-shaped electrodes being configured to excite a first elastic wave in the first overlapping region and to excite a second elastic wave in the second overlapping region, a frequency of the first elastic wave being higher than a frequency of the second elastic wave.

Abstract: A front-end circuit component includes a base-body elastic wave filter and a mounted electronic component. The base-body elastic wave filter includes a piezoelectric substrate and an IDT electrode on an upper surface of a piezoelectric substrate. The mounted electronic component is mounted above the piezoelectric substrate to define a sealed space in which the IDT electrode is disposed.

Abstract: An acoustic wave element (100) according to certain examples includes a piezoelectric body (130), an interdigital transducer (IDT) electrode (140, 150) disposed above the piezoelectric body (130), and a connection electrode (160) disposed above the piezoelectric body (130) and connected to the IDT electrode (140, 150). A first insulation layer (172) covers the connection electrode (160), and a second insulation layer (174a, 174b) covers the IDT electrode (140, 150). The first insulation layer (172) disposed above the connection electrode (160) has a first thickness T in a direction perpendicular to an upper surface of the piezoelectric body (130) and the second insulation layer (174b) disposed above the IDT electrode (150) has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body (130). The first thickness T is less than the second thickness K based on FIG. 2C and the relevant description.

Abstract: A multiplexer includes a common terminal, a Band66 transmission-side filter, a Band30 transmission-side filter, and an inductance element. The Band66 transmission-side filter includes series arm resonators and parallel arm resonators. The frequency of spurious waves generated by the Band66 transmission-side filter is included in a pass band of the Band30 transmission-side filter. A transmission output terminal is connected to a common terminal with the inductance element interposed therebetween and is directly connected to one parallel arm resonator. The one parallel arm resonator has a largest capacitance, among the parallel arm resonators.

Abstract: A surface acoustic wave device of a ladder type includes a series resonator and a parallel resonator, in which the parallel resonator includes a first reflector, a second reflector, and a comb-shaped electrode located between the first reflector and the second reflector, and the comb-shaped electrode includes a first section in which electrode fingers are formed at a constant cycle, and a second section in which electrode fingers are formed at a constant cycle different from the cycle of the first section.

Abstract: An elastic wave resonator including a piezoelectric substrate and an IDT electrode, the IDT electrode includes a first electrode finger and a second electrode finger arranged next to the first electrode finger; when W1 is the width of the first electrode finger, W2 is the width of the second electrode finger, and L is a pitch or an electrode finger center distance between the first electrode finger and the second electrode finger; a metallization ratio (W1/L) of the first electrode finger is smaller than a metallization ratio (W2/L) of the second electrode finger; a sum (W1/L+W2/L) of the metallization ratio of the first electrode finger and the metallization ratio of the second electrode finger is between about 0.65 and about 1.00 inclusive, and a ratio (W2/W1) between a width of the first electrode finger and a width of the second electrode finger is between about 1.12 and about 2.33 inclusive, or W1/L+W2/L is larger than about 1.00, and W2/W1 is between about 1.40 and about 2.34 inclusive.

Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.

Abstract: An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Abstract: Disclosed in one embodiment is filter circuitry having first and second paths extending between first and second nodes. The first path has a first inductor and a second inductor coupled in series between the first node and the second node, wherein the first inductor and the second inductor are positively coupled with one another, and a first common node is provided between the first inductor and the second inductor. First shunt acoustic resonators are coupled between the first common node and a fixed voltage node. The second path includes a third inductor and a fourth inductor coupled in series between the first node and the second node. The third inductor and the fourth inductor are negatively coupled with one another, and a second common node is provided between the third inductor and the fourth inductor. Second acoustic resonators are coupled between the second common node and a fixed voltage node.

Abstract: An elastic wave apparatus includes first and second bandpass filters and the first bandpass filter is a ladder elastic wave filter. The mounting substrate includes an inductor which is connected between at least one of parallel arm resonators and a ground potential, a signal wiring at a hot side, which is connected to the first bandpass filter, and a ground wiring. When the mounting substrate is viewed from a side of a surface on which the elastic wave filter chip is mounted, a portion of the inductor overlaps with a portion of the signal wiring and a slit defining a wiring missing portion in which the ground wiring is absent in the ground wiring is provided in the overlapped portion.

Abstract: In a quartz crystal unit, the unit comprising a quartz crystal tuning fork resonator having a quartz crystal tuning fork base, and first and second quartz crystal tuning fork tines, each of the first and second quartz crystal tuning fork tines having a first vibrational portion including a first width and a second vibrational portion including a second width greater than the first width, at least one groove being formed in at least one of opposite main surfaces of the first vibrational portion of each quartz crystal tuning fork tine, the first width of the first vibrational portion of each quartz crystal tuning fork tine being greater than 0.03 mm and less than 0.075 mm and the second width of the second vibrational portion of each quartz crystal tuning fork tine being greater than 0.04 mm and less than 0.23 mm.

Abstract: Methods of designing a BAW resonator having fractal geometry and the resulting devices are provided. Embodiments include providing a fractal generator function; providing three or more line segments; applying the fractal generator function to each of the three or more line segments to form three or more respective fractal line segments, each of the three or more fractal line segments having a respective start point and endpoint and at least four sub-segments; and connecting an endpoint of each one of the three or more fractal line segments to a successive start point of another of the three or more fractal line segments to form a closed-loop contour line representative of an area of an electrode of a BAW resonator, the closed-loop contour line having a fractal dimension that is greater than one and less than two.

Abstract: At least one of a transmission filter and a reception filter of a duplexer includes a piezoelectric substrate, an elastic wave filter electrode portion on the piezoelectric substrate and including ground terminals to be connected to a ground potential, a support layer provided on the piezoelectric substrate, a cover provided on the support layer to seal a cavity in the support layer, and via hole electrodes penetrating the support layer and the cover and including first and second ends. The ground terminals are commonly connected on the piezoelectric substrate, and the ground terminals are electrically connected to the respective first ends of the plurality of via hole electrodes. The second ends of the via hole electrodes are connected to the ground potential outside of the at least one of the transmission filter and the reception filter.