Abstract: The LED package structure includes a substrate, an LED chip, a plastic package body, and two leading legs. In addition, the LED chip is arranged on the substrate and covered by the packaging plastic body. Moreover, the plastic package body contains a light-converging part and a light-scattering part, in which the light-converging part has a first axis and the light-scattering part has a second axis. In addition, the first axis of the light-converging part intersects the second axis of the light-scattering part. Furthermore, one terminal of each of the two leading legs is electrically connected to the LED chip while another terminal extends out of the packaging plastic body. Because the LED package structure can converge light and scatter light in different directions, the backlight module implementing the LED package structure has the advantage of a shorter light-mixing distance and better light utilization.

Abstract: An article of manufacture and system, as well as fabrication methods therefore, may include a plurality of lands disposed on a surface of a substrate wherein the lands are oriented at an angle to the surface of the substrate and further wherein the substrate is formed of conductive layers that are formed such that a non-conductive layer does not interpose between the conductive layers and their coupling.

Abstract: For high density packaging of a semiconductor device, the semiconductor device has a multi-layer substrate, a first-stage chip connected electrically to the multi-layer substrate, other package substrates stacked in three stages on the multi-layer substrate and each connected to an underlying wiring substrate through solder balls, second-, third- and fourth-stage chips electrically connected respectively to the other package substrates, and solder balls provided on the bottom multi-layer substrate. The number of wiring layers in the bottom multi-layer substrate which has a logic chip is larger than that in the package substrates which have memory chips, whereby the semiconductor device can have a wiring layer not used for distribution of wires to the solder balls and wiring lines in the wiring layer can be used for the mounting of another semiconductor element or a passive component to attain high density packaging of the semiconductor device as a stacked type package.

Abstract: In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.