Patents Examined by Binh X Tran
  • Patent number: 10847376
    Abstract: A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: November 24, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Yusuke Osawa, Syo Fukata, Naoto Umehara, Sung Tae Lee
  • Patent number: 10844333
    Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: November 24, 2020
    Assignee: BASF SE
    Inventors: Christian Daeschlein, Max Siebert, Michael Lauter, Piotr Przybylski, Julian Proelss, Andreas Klipp, Haci Osman Guevenc, Leonardos Leunissen, Roelf-Peter Baumann, Te Yu Wei
  • Patent number: 10840082
    Abstract: A method for cleaning SnO2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of 1%-60% into a plasma processing system. The SnO2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH4 gas. The SnH4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of 1%-60% reduces a rate of SnH4 gas decomposition into Sn powder.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: November 17, 2020
    Assignee: Lam Research Corporation
    Inventors: Akhil Singhal, Dustin Zachary Austin, Jeongseok Ha, Pei-Chi Liu
  • Patent number: 10829690
    Abstract: Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Bo-yun Kim, Kenji Takai, Do-yoon Kim, Sang-kyun Kim, Bo-un Yoon
  • Patent number: 10825678
    Abstract: A wafer processing method includes: a bonding step of bonding a front surface side of a first wafer chamfered at a peripheral edge portion thereof to a front surface side of a second wafer; a grinding step of holding a back surface side of the second wafer by a chuck table and grinding a back surface of the first wafer to thin the first wafer to a finished thickness, after the bonding step; and a modified layer forming step of applying along a boundary between a device region and a peripheral surplus region of the first wafer a laser beam of such a wavelength as to be transmitted through the first wafer to form an annular modified layer inside the first wafer in the vicinity of the front surface of the first wafer, before the grinding step.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: November 3, 2020
    Assignee: DISCO CORPORATION
    Inventor: Tetsukazu Sugiya
  • Patent number: 10818507
    Abstract: Embodiments provide isotropic and selective etching of silicon nitride layers for the manufacture of microelectronic workpieces through sequential exposure of silicon nitride layers to plasma including hydrogen radicals and plasma including fluorine radicals. For example, the sequential application of plasma etch steps can use: (1) a first plasma gas including hydrogen (H2) and argon (Ar), and (2) a second plasma gas including nitrogen trifluoride (NF3), oxygen (O2), and Ar. These plasma gases are ignited within a processing region or chamber under sufficient pressure to generate the hydrogen radicals and the fluorine radicals. Other plasma gas chemistries can also be used under sufficient pressures to generate alternating application of hydrogen radicals and fluorine radicals.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: October 27, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sonam D. Sherpa, Alok Ranjan
  • Patent number: 10811268
    Abstract: According to one embodiment, a substrate processing apparatus comprises a chamber for a substrate that has a target film thereon. The apparatus includes a first gas introducing unit to introduce a precursor gas into the chamber, a second gas introducing unit that introduces a etching gas for etching the target film into the chamber, and a controller configured to control the first gas introducing unit and the second gas introducing unit to cause the first gas and the second gas to be alternately introduced to the chamber.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: October 20, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yusuke Kasahara, Shinichi Ito, Seiji Morita, Ryosuke Yamamoto, Ryuichi Saito
  • Patent number: 10800972
    Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: October 13, 2020
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Hyo Sun Lee, Ho Young Kim, Sang Won Bae, Min Goo Kim, Jung Hun Lim, Yong Jae Choi
  • Patent number: 10802392
    Abstract: Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: October 13, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Banqiu Wu, Eli Dagan
  • Patent number: 10800092
    Abstract: Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: October 13, 2020
    Assignee: Surfx Technologies LLC
    Inventors: Siu Fai Cheng, Thomas Scott Williams, Toby Desmond Oste, Sarkis Minas Keshishian, Robert F. Hicks
  • Patent number: 10797189
    Abstract: The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection or reflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: October 6, 2020
    Assignee: NANOCLEAR TECHNOLOGIES INC.
    Inventors: Harold Frank Greer, Scott S. Harried, Ryan Morrow Briggs, Tony Lee
  • Patent number: 10790168
    Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: September 29, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Bo Shim, Hyuk Kim, Sun Taek Lim, Jae Myung Choe, Jeon Il Lee, Sung-Il Cho
  • Patent number: 10784114
    Abstract: Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Han-Wen Liao, Jun-Xiu Liu, Chun-Chih Lin
  • Patent number: 10784089
    Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: September 22, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James Rogers, Linying Cui, Rajinder Dhindsa
  • Patent number: 10763108
    Abstract: Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: September 1, 2020
    Assignee: Lam Research Corporation
    Inventors: Dennis M. Hausmann, Alexander R. Fox, David Charles Smith, Bart J. van Schravendijk
  • Patent number: 10763174
    Abstract: A method for recovering carbon-face-polarized silicon carbide substrates, including: providing an epitaxial structure, the epitaxial structure includes a carbon-face-polarized silicon carbide substrate to be recovered, as well as a nitrogen-face-polarized gallium nitride buffer layer, a barrier layer and a nitrogen-face-polarized gallium nitride channel layer that are sequentially deposited on the silicon carbide substrate; removing the nitrogen-face-polarized gallium nitride buffer layer, the barrier layer and the nitrogen-face-polarized gallium nitride channel layer by wet etching; and cleaning and blowing dry the carbon-face-polarized silicon carbide substrate.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: September 1, 2020
    Assignee: SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
    Inventors: Xianfeng Ni, Qian Fan, Wei He
  • Patent number: 10748797
    Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: August 18, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sidharth Bhatia, Edward P. Hammond, IV, Bhaskar Kumar, Anup Kumar Singh, Vivek Bharat Shah, Ganesh Balasubramanian
  • Patent number: 10745778
    Abstract: Leaching aids, for example, when present in a leaching solution, and methods of using the leaching aids. The leaching aids can include one or a combination of compounds. The method of using the leaching aids can include a process of recovering metal from ore, for example, a process involving heap leaching, solvent extraction and electrowinning.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: August 18, 2020
    Assignee: BASF SE
    Inventors: Jack Thomas Bender, Nathan Clark Emmerich, Russell Vincent Brewer, Lauren Michele Hight
  • Patent number: 10741411
    Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: August 11, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Antti Juhani Niskanen, Jaakko Anttila
  • Patent number: 10732085
    Abstract: A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: August 4, 2020
    Assignee: Bell Helicopter Textron Inc.
    Inventors: Xiaoming Li, Bogdan R. Krasnowski, Robert A. Figueroa, Robert Wardlaw