Abstract: The present disclosure provides a method of preparing active areas. The method includes the operations of: receiving a substrate having an oxide layer, a nitride layer, and a silicon layer thereon; forming a patterned photoresist layer on the silicon layer; depositing a mask layer to cover a contour of the patterned photoresist layer; coating a carbon layer on the mask layer; etching the carbon layer, the mask layer, and the silicon layer to expose a top surface of the nitride layer; forming a plurality of opens in the oxide layer to expose a top surface of the substrate; and growing an epitaxial layer from the top surface of the substrate in the plurality of opens to form the active areas.

Abstract: A method and system for creating readily identifiable discrete markings on an application surface of an object. The system comprises a stencil having a cutout openings forming a discrete identifier, and a marking reagent comprising an organic solvent, isopropyl alcohol, and a metal marking component. After applying the stencil to an application surface, the marking reagent is applied to the application surface via the cutout openings. The marking reagent may then etch the discrete identifier as well portions on an interior portion of the application surface. In some applications, the system may be applied to a surface having dirt and grease. In addition, marking reagent may embed a cured portion of the marking reagent within the well portions.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.

Abstract: A method of manufacturing a glass includes forming a first etch protection layer on a first surface of a glass substrate, and forming a second etch protection layer on a second surface of the glass substrate; removing a part of the first protection layer and a part of the second protection layer by applying a laser pulse penetrating the glass substrate from above the first surface of the glass substrate; forming a cut part in the glass substrate by etching the glass substrate using an etching solution; and removing the first etch protection layer and the second etch protection layer. The second surface is opposite to the first surface.

Abstract: A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.

Abstract: A method for producing a timepiece spring includes the following steps: producing a piece based on silicon, having the desired shape of the timepiece spring; thermally oxidising the piece; deoxidising the piece; annealing the piece in a reducing atmosphere; forming a silicon oxide layer on the piece.

Abstract: A forming method of a thin layer with a pore is provided. The method includes forming a thin layer on a substrate, stacking a first mask and a second mask on the thin layer in this order, and forming a pore in the thin layer by dry etching. The first mask includes at least a self-assembling material. The second mask is more resistant to reactive etching or physical etching than the first mask.

Abstract: A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.

Abstract: A multilayer plate with composite material and a method thereof are described. The multilayer plate includes an aluminum-based thin sheet and a composite material layer. The aluminum-based thin sheet includes a first passivation layer, an aluminum-based metal layer, and a second passivation layer sequentially. The aluminum-based thin sheet includes a first surface and a second surface opposite to the first surface. The first and second surfaces are set with micro holes. A diameter of the micro holes in the second surface is ranging from 0.5 ?m to 10 ?m. The composite material layer includes a thermoplastic polymer and a fiber material. The composite material layer has a third surface and a fourth surface opposite each other. The second surface is adjacent to or connected to the third surface. At least one portion of the thermoplastic polymer fills into the micro holes in the second surface.

Abstract: The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.

Abstract: According to one embodiment, a template for nanoimprint lithography includes a substrate having a main surface and a mesa structure on the main surface. The mesa structure has an upper surface that can be patterned with recesses or the like. A film containing a quantum dot or quantum dots is on the main surface other than the upper surface of the mesa structure. The quantum dot can absorb ultraviolet light and emit visible light.

Abstract: A polishing liquid containing: abrasive grains; a hydroxy acid; a polymer compound having at least one selected from the group consisting of a hydroxyl group and an amide group; and a liquid medium, in which a zeta potential of the abrasive grains is positive, and a weight average molecular weight of the polymer compound is 3000 or more.

Abstract: The present invention relates to: a method of manufacturing glass with hollow nanopillars, which includes a silicon oxide layer forming step in which a silicon oxide layer made of silicon oxide is formed on one side of a glass substrate, a first etching step in which the silicon oxide layer is etched and a plurality of silicon oxide clusters are formed on the glass substrate, and a second etching step in which the glass substrate, on which the silicon oxide clusters are formed, is etched and hollow nanopillars are formed; and glass with hollow nanopillars manufactured thereby.

Abstract: A semiconductor device manufacturing method includes the steps of etching a semiconductor material by using plasma, forming a damage layer on the semiconductor material, and removing the damage layer such that a relatively low temperature process can form a fine pattern with a vertical cross section using a compound semiconductor material or the like.

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O2 or chloride (Cl2) while supplying nitrogen (N2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

Abstract: Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Abstract: The present disclosure relates to an apparatus and method for cleaning an edge director, and more particularly, to an edge director cleaning apparatus that includes two or more nozzle pipes arranged to be parallel to each other, nozzle tips respectively provided at first ends of the two or more nozzle pipes, fuel manifolds respectively connected to second ends of the two or more nozzle pipes, and a fixing guide configured to fix the nozzle pipes, wherein the nozzle tips extend in an oblique direction with respect to an extending direction of the nozzle pipes. When the apparatus and method for cleaning an edge director according to the present disclosure are used, devit can be safely removed without damage to the apparatus while reducing downtime.