Patents Examined by Binh X Tran
  • Patent number: 10450225
    Abstract: The present invention relates to a glass having a surface with improved water-repellency or hydrophobicity and low reflectance, and a fabrication method thereof. A technology is employed, in which a thin film containing silicon or silicon oxide is formed on the glass surface, the nano-structures are formed by selective etching treatment using a reactive gas such as CF4 or the like to provide superhydrophobicity and low reflectance properties, and a material with low surface energy is coated onto the nano-structures. The fabrication method of the low-reflective and superhydrophobic or super water-repellent glass may execute deposition and etching processes for the glass having the superhydrophobicity and the low reflectance, and provide excellent superhydrophobicity and low reflectance to the surface of the glass which was difficult to be treated. Also, the method is sustainable due to non-use of a toxic etching solution during these processes.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: October 22, 2019
    Assignee: Korea Institute of Science and Technology
    Inventors: Myoung Woon Moon, Heon Ju Lee, Jeong Sim Lee, Tae Jun Ko, Kyu Hwan Oh, Do Hyun Kim, Eu Sun Yu
  • Patent number: 10434546
    Abstract: The water outlet of a subsystem that includes an ultraviolet oxidation device and the water inlet of each substrate treatment device are connected to each other via a main pipe. A hydrogen peroxide removal device is installed between the ultraviolet oxidation device of the subsystem and a non-regenerative ion-exchange device. In addition, a carbon dioxide supply device is installed at the middle of a pipe that branches from the water outlet of the subsystem to reach the substrate treatment device. According to an aspect, the hydrogen peroxide removal device is filled with a platinum-group metal catalyst. Thus, ultrapure water passed through the ultraviolet oxidation device is used as a base to produce carbonated water in which the concentration of hydrogen peroxide dissolved therein is limited to 2 ?g/L or less and to which carbon dioxide is added to adjust resistivity to be within the range of 0.03 to 5.0 M?·cm.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: October 8, 2019
    Inventors: Daisaku Yano, Masami Murayama, Yukinari Yamashita, Koji Yamanaka
  • Patent number: 10431436
    Abstract: A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: October 1, 2019
    Inventors: Huma Ashraf, Kevin Riddell, Roland Mumford, Grant Baldwin
  • Patent number: 10431866
    Abstract: The present invention provides a process and structure of microfabricated air bridges for planar microwave resonator circuits. In an embodiment, the invention includes depositing a superconducting film on a surface of a base material, where the superconducting film is formed with a compressive stress, where the compressive stress is higher than a critical buckling stress of a defined structure, etching an exposed area of the superconducting film, thereby creating the at least one bridge, etching the base material, thereby forming a gap between the at least one bridge and the base material, depositing the at least one metal line on at least part of the superconducting film and at least part of the base material, where the at least one metal line runs under the bridge.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: October 1, 2019
    Assignee: International Business Machines Corporation
    Inventors: Vivekananda P. Adiga, Markus Brink
  • Patent number: 10431743
    Abstract: A manufacturing method of an OLED anode and display device are provided, which the former method comprises the steps: forming an anode-film layer, a material is an ITO, on a substrate; forming a photoresist-film layer on the anode-film layer; patterning the photoresist-film layer to acquire a photoresist-mask pattern, which comprises: an area of photoresist full-retention, photoresist half-retention, and a photoresist full-removal, wherein the photoresist area of half-retention is located between the full-retention and the full-removal; etching the anode film layer to acquire an anode pattern; removing the photoresist half-retention area; perform a plasma treatment to a portion of the anode pattern outside the photoresist full-retention area by adopting a first gas, comprising at least one of O2, N2O, CF4, Ar; removing the photoresist-mask pattern.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: October 1, 2019
    Inventor: Lei Xing
  • Patent number: 10421884
    Abstract: A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: September 24, 2019
    Inventor: Rika Tanaka
  • Patent number: 10424489
    Abstract: A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I).
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 24, 2019
    Inventor: Go Matsuura
  • Patent number: 10418247
    Abstract: Polishing compositions comprising ceria coated silica particles offer minimal topography, reduced oxide and nitride losses, while providing high oxide polish rates. These formulations are especially useful for polishing large structures typically used in 3D NAND device manufacturing.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: September 17, 2019
    Inventors: Krishna P. Murella, Hongjun Zhou, Dnyanesh Chandrakant Tamboli
  • Patent number: 10418276
    Abstract: A control method for differentiated etching depth is provided. The method includes: providing a first etching stop pattern layer in a panel having stacked structure; adopting a first etchant to perform a first etching process to the panel such that a location of the panel provided with the first etching stop pattern layer forms a first etching depth, and forms a second etching depth at a location of the panel without providing the first etching stop pattern layer; through controlling an etching time, the second etching depth is deeper than a bottom of the first etching stop pattern layer; and adopting a second etchant to perform a second etching process to the panel in order to etch and remove the first etching stop pattern layer. In a same mask process, through changing the etchant, different depths are etched and formed to reduce the time consuming and decrease the production cost.
    Type: Grant
    Filed: April 25, 2017
    Date of Patent: September 17, 2019
    Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
    Inventor: Wei Wang
  • Patent number: 10407594
    Abstract: A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(?O)(OR4)(OR5)), phosphate (—O—P(?O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(?O)(OH)2), phosphoric acid (—O—P(?O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: September 10, 2019
    Assignee: BASF SE
    Inventors: Bastian Marten Noller, Yuzhuo Li, Diana Franz, Kenneth Rushing, Michael Lauter, Daniel Kwo-Hung Shen, Yongqing Lan, Zhenyu Bao
  • Patent number: 10408744
    Abstract: A processing system monitors and/or controls a surface modification process occurring on a substrate within a processing chamber. An optical processing module having a light emission submodule to output a generated light signal and an optical detection submodule to detect a resultant light signal, is connected via fiber optic cables to light illuminating and light receiving components located within the chamber. A processor determines an amount of atomic absorption by an atomic element encountered by a probing beam passing between the illuminating and receiving components, based on the intensity of the generated light signal, the intensity of the received light signal and optionally the spontaneous emission of the atomic element in the absence of illumination by a probing beam. Based on the determined amount, the system derives a plurality of parameters of the modified substrate, their spatial and temporal uniformity, and information about process conditions in the processing chamber.
    Type: Grant
    Filed: August 16, 2018
    Date of Patent: September 10, 2019
    Assignee: Accustrata, Inc.
    Inventors: George Atanasoff, Christopher Metting, Hasso Von Bredow
  • Patent number: 10410877
    Abstract: An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF4).
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: September 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Ryuichi Takashima, Taku Gohira, Yoshinobu Ooya
  • Patent number: 10398269
    Abstract: A method for operating a self-propelled floor cleaning device, in a first operating step, drives the floor cleaning device across a first treatment path across the floor to be cleaned according to a predetermined driving strategy, or according to a predetermined algorithm, which is calculated on the basis of data, which are detected by sensors and thereby carries out a first cleaning step by a first cleaning device. In the first operating step, areas of the floor surfaces to be cleaned, which are cleaned in at least a second operating step by a second cleaning device, or which are excluded from the cleaning by the second cleaning device, are determined. A floor cleaning device, which is suitable for carrying out the method, has a chassis, a first cleaning device for dry cleaning a floor surface, and a second cleaning device for wet cleaning areas of the floor surface.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: September 3, 2019
    Assignee: Vorwerk & Co. Interholding GmbH
    Inventors: Lorenz Hillen, Martin Meggle, Jenny Scheffel, Jan Von Der Heyden, Nazil Eidmohammadi, Sabrina Hoffmann
  • Patent number: 10395943
    Abstract: To provide a patterning method for forming a desired pattern in a reverse process. A patterning method includes a reverse process. A photocurable composition contains at least a polymerizable compound (A) component and a photopolymerization initiator (B) component. The (A) component has a mole fraction weighted average molecular weight of 200 or more and 1000 or less. The (A) component has an Ohnishi parameter (OP) of 3.80 or more. The Ohnishi parameter (OP) of the (A) component is a mole fraction weighted average of N/(NC?NO), wherein N denotes a total number of atoms in a molecule, NC denotes a number of carbon atoms in the molecule, and NO denotes a number of oxygen atoms in the molecule.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: August 27, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiki Ito, Takeshi Honma, Shiori Yonezawa, Tomonori Otani, Kazumi Iwashita
  • Patent number: 10393455
    Abstract: Method for treating a heat exchanger which in operation is used to cool process water which has been in contact with polymer particles. The method includes passing to the process side of the heat exchanger a treatment stream while the heat exchanger is at an elevated temperature compared to the temperature when the heat exchanger is in operation.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: August 27, 2019
    Assignee: INEOS EUROPE AG
    Inventors: Gary Pitman, Kevin Ramsay
  • Patent number: 10377948
    Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: August 13, 2019
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Hyo Sun Lee, Ho Young Kim, Sang Won Bae, Min Goo Kim, Jung Hun Lim, Yong Jae Choi
  • Patent number: 10376932
    Abstract: Methods of cleaning internal portions of additively manufactured components are provided, together with an apparatus for carrying out the cleaning. The methods use an impacting element which is contained within the internal portion and the component is vibrated to clean material from the component and leave one or more hollow portions. Various embodiments for retaining the impacting element are set out, which preferably use a grid which allows loosened powder to fall out of the component and, optionally, be recycled for use in further manufacturing processes. The methods are described in relation to components for gas turbine engines but have wider application in relation to any additively manufactured component in which it is desired to have a hollow internal portion.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: August 13, 2019
    Assignee: ROLLS-ROYCE plc
    Inventors: Peter Williamson, Richard Hawley, David Neely
  • Patent number: 10370529
    Abstract: Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: August 6, 2019
    Assignee: LG Chem, Ltd.
    Inventors: Se Jin Ku, Mi Sook Lee, Hyung Ju Ryu, Jung Keun Kim, Sung Soo Yoon, No Jin Park, Je Gwon Lee, Eun Young Choi
  • Patent number: 10366888
    Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: July 30, 2019
    Assignees: Tokyo Electron Limited, TOKYO OHKA KOGYO CO., LTD.
    Inventors: Kazuki Yamada, Masatoshi Yamato, Hidetami Yaegashi, Yoshitaka Komuro, Takehiro Seshimo, Katsumi Ohmori
  • Patent number: 10358382
    Abstract: The present invention relates to a process for manufacturing glass sheets with diffuse finish and the resulting glass sheet by this process. The glass sheet is subjected to a series of alternate immersions in acidic solutions and alkaline solutions to remove impurities and waste and to generate a diffuse finish on both sides of the glass sheet. The process generates in the glass sheet in at least one side, a diffuse surface with a peak to valley roughness (Rt) of between 5.8343 ?m and 9.3790 ?m; an average roughness (Ra) value between 0.8020 ?m and 0.9538 ?m; an RMS roughness between 0.9653 ?m and 1.1917 ?m; a solar transmission between 84.8% and 46.50%; a solar reflection between 7.4 and 4.4%; a light transmission between 88.5% and 67.70%; a reflection of light between 6.50% and 5.20%; and UV transmission between 35.60% and 70.20%.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: July 23, 2019
    Assignee: Vidrio Plano de Mexico, S.A. de C.V.
    Inventors: Jose Luis Tavares Cortes, Arturo Si Ming Lamshing Tai, Gerardo Soto Puente, Jorge Sanchez-Gonzalez