Abstract: An electronic device includes an electronic panel including an active area and a pad area and including an input sensing member and a circuit board overlapping at least a side of the pad area. The electronic panel includes a first conductive layer, a second conductive layer, a first organic insulation layer disposed between the first conductive layer and the second conductive layer, a pattern layer disposed on the second conductive layer, overlapping the plurality of second conductive patterns, and including a plurality of organic patterns, and a second organic insulation layer covering the pattern layer and the second conductive layer. The pattern layer covers an upper surface of the second conductive layer.

Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a pH of about 4 to about 10. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Abstract: A plasma ashing system includes a plasma generator configured to generate a plasma from a gas source. The system further includes a plasma reaction chamber configured to house a substrate comprising a Parylene coating, wherein the plasma reaction chamber is configured to expose surfaces of the Parylene coating on the substrate to the plasma, wherein the plasma is configured to remove portions of the Parylene coating on the substrate.

Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: Semiconductor processing systems and methods are disclosed. An exemplary semiconductor processing system may include a semiconductor processing chamber containing a solid boron deposit, a remote plasma unit disposed upstream of the semiconductor processing chamber, and an optical absorption sensor disposed downstream of the semiconductor processing chamber. The remote plasma unit may be configured to generate plasma effluents from a fluorine-containing precursor. The optical absorption sensor may be configured to measure within an outflow from the semiconductor processing chamber a level of a boron-containing compound produced via a reaction between at least a portion of the solid boron deposit and the plasma effluents flowed from the remote plasma unit into the semiconductor processing chamber.

Abstract: An etchant is described that includes an N-heterocyclic carbene and optionally an appropriate solvent. The etchant was effective at etching a metallic surface having, for example, a metal oxide and/or metal, in both solution phase and vapour-phase. The etchant has been shown to effectively etch oxidized copper and tungsten.

Abstract: A method and system for creating readily identifiable discrete markings on an application surface of an object. The system comprises a stencil having a cutout openings forming a discrete identifier, and a marking reagent comprising an organic solvent, isopropyl alcohol, and a metal marking component. After applying the stencil to an application surface, the marking reagent is applied to the application surface via the cutout openings. The marking reagent may then etch the discrete identifier as well portions on an interior portion of the application surface. In some applications, the system may be applied to a surface having dirt and grease. In addition, marking reagent may embed a cured portion of the marking reagent within the well portions.

Abstract: The present disclosure provides a method of preparing active areas. The method includes the operations of: receiving a substrate having an oxide layer, a nitride layer, and a silicon layer thereon; forming a patterned photoresist layer on the silicon layer; depositing a mask layer to cover a contour of the patterned photoresist layer; coating a carbon layer on the mask layer; etching the carbon layer, the mask layer, and the silicon layer to expose a top surface of the nitride layer; forming a plurality of opens in the oxide layer to expose a top surface of the substrate; and growing an epitaxial layer from the top surface of the substrate in the plurality of opens to form the active areas.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.

Abstract: A method of manufacturing a glass includes forming a first etch protection layer on a first surface of a glass substrate, and forming a second etch protection layer on a second surface of the glass substrate; removing a part of the first protection layer and a part of the second protection layer by applying a laser pulse penetrating the glass substrate from above the first surface of the glass substrate; forming a cut part in the glass substrate by etching the glass substrate using an etching solution; and removing the first etch protection layer and the second etch protection layer. The second surface is opposite to the first surface.

Abstract: A method for producing a timepiece spring includes the following steps: producing a piece based on silicon, having the desired shape of the timepiece spring; thermally oxidising the piece; deoxidising the piece; annealing the piece in a reducing atmosphere; forming a silicon oxide layer on the piece.

Abstract: A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.

Abstract: A forming method of a thin layer with a pore is provided. The method includes forming a thin layer on a substrate, stacking a first mask and a second mask on the thin layer in this order, and forming a pore in the thin layer by dry etching. The first mask includes at least a self-assembling material. The second mask is more resistant to reactive etching or physical etching than the first mask.

Abstract: A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.

Abstract: The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.