Patents Examined by Bitew A Dinke
-
Patent number: 11973071Abstract: In an embodiment, a semiconductor module includes a low side switch and a high side switch. The low side switch and the high side switch are arranged laterally adjacent one another and coupled in series between a ground package pad and a voltage input (VIN) package pad of the semiconductor module and form a half bridge configuration having an output node. The semiconductor module further includes a first capacitor pad coupled to ground potential and a second capacitor pad coupled to a VIN potential. The first capacitor pad is arranged vertically above the low side switch and the second capacitor pad is arranged vertically above the high side switch.Type: GrantFiled: May 4, 2021Date of Patent: April 30, 2024Assignee: Infineon Technologies Austria AGInventors: Gerhard Noebauer, Sergey Yuferev
-
Patent number: 11967664Abstract: The present disclosure generally relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photodiodes such as avalanche photodiodes (APDs) and single photon avalanche diodes (SPADs).Type: GrantFiled: April 20, 2022Date of Patent: April 23, 2024Assignee: GlobalFoundries Singapore Pte. Ltd.Inventors: Ping Zheng, Eng Huat Toh, Cancan Wu, Kiok Boone Elgin Quek
-
Patent number: 11961910Abstract: A ferroelectric capacitor or a ferroelectric transistor may include a first metal layer having a first metal having a first work function, and a second metal layer having a second metal having a second work function. The capacitor may also include a a vertical electrode and a ferroelectric material that surrounds the vertical electrode and forms a plurality of switching regions in the ferroelectric material. The transistor may include a vertical channel, a vertical buffer layer that surround the vertical channel, and a ferroelectric material that surrounds the vertical buffer layer and forms a plurality of gate regions in the ferroelectric material.Type: GrantFiled: August 25, 2020Date of Patent: April 16, 2024Assignee: Applied Materials, Inc.Inventor: Milan Pe{hacek over (s)}ić
-
Patent number: 11963467Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.Type: GrantFiled: May 13, 2022Date of Patent: April 16, 2024Assignee: SK hynix Inc.Inventors: Hyo-June Kim, Hyun-Seok Kang, Chi-Ho Kim, Jae-Geun Oh
-
Patent number: 11955559Abstract: Provided are a thin film transistor, a display device, and a thin film transistor manufacturing method, in which variation in characteristics is small. The present invention is provided with: a gate electrode formed on a substrate; a gate insulation film formed so as to cover the gate electrode; a semiconductor layer which is formed on the upper side of the gate insulation film and which includes a polysilicon layer disposed, in a plan view, inside a region defined by the gate electrode; an etching stopper layer disposed on the upper side of the polysilicon layer; and a source electrode and a drain electrode provided on the semiconductor layer so as to be separated from each other, wherein the polysilicon layer has first and second regions which are not covered with the etching stopper layer, and a part of the source electrode exists above the first region and a part of the drain electrode exists above the second region.Type: GrantFiled: August 27, 2021Date of Patent: April 9, 2024Assignee: SAKAI DISPLAY PRODUCTS CORPORATIONInventors: Yoshiaki Matsushima, Shigeru Ishida, Ryohei Takakura, Satoru Utsugi, Nobutake Nodera, Takao Matsumoto, Satoshi Michinaka
-
Patent number: 11950420Abstract: A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.Type: GrantFiled: November 2, 2021Date of Patent: April 2, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Su Jin Park, Sun Young Kim, Jang Gn Yun
-
Patent number: 11943950Abstract: A plurality of light-emitting devices (10) include a plurality of light-emitting devices (10a), a plurality of light-emitting devices (10b), and a plurality of light-emitting devices (10c). The plurality of light-emitting devices (10) are aligned on a reflecting member (20). Six light-emitting devices (10c) are aligned in a straight line along one direction. Four light-emitting devices (10b) are aligned surrounding a region facing one ends of the six light-emitting devices (10c). Each of four light-emitting devices (10a) are aligned with each of the four light-emitting devices (10b) outside the four light-emitting devices (10b).Type: GrantFiled: July 11, 2022Date of Patent: March 26, 2024Assignee: Pioneer CorporationInventors: Takeru Okada, Chihiro Harada, Ayako Yoshida, Takashi Chuman
-
Patent number: 11942515Abstract: A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.Type: GrantFiled: April 21, 2022Date of Patent: March 26, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Jongki Jung, Myungil Kang, Yoonhae Kim, Kwanheum Lee
-
Patent number: 11935752Abstract: A device includes a first dielectric layer, a first conductor, an etch stop layer, a second dielectric layer, and a second conductor. The first conductor is in the first dielectric layer. The etch stop layer is over the first dielectric layer. The etch stop layer has a first surface facing the first dielectric layer and a second surface facing away from the first dielectric layer, and a concentration of carbon in the etch stop layer periodically varies from the first surface to the second surface. The second dielectric layer is over the etch stop layer. The second conductor is in the second dielectric layer and the etch stop layer and electrically connected to the first conductor.Type: GrantFiled: March 12, 2021Date of Patent: March 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Yun Peng, Chung-Chi Ko, Keng-Chu Lin
-
Patent number: 11923359Abstract: A method for forming a FinFET device structure is provided. The method includes forming a first fin structure and a second fin structure over a substrate and forming a liner layer over the first fin structure and the second fin structure. The method also includes forming an isolation layer over the liner layer and removing a portion of the liner layer and a portion of the isolation layer, such that the liner layer includes a first liner layer on an outer sidewall surface of the first fin structure and a second liner layer on an inner sidewall surface of the first fin structure, and a top surface of the second liner layer is higher than a top surface of the first liner layer.Type: GrantFiled: July 12, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Shu Wu, Shu-Uei Jang, Wei-Yeh Tang, Ryan Chia-Jen Chen, An-Chyi Wei
-
Patent number: 11908782Abstract: An electronic assembly and methods of making the assembly are disclosed. The electronic assembly includes a substrate with an elastic member having an intrinsic stress profile. The elastic member has an anchor portion on the surface of the substrate; and a free end biased away from the substrate via the intrinsic stress profile to form an out of plane structure. The substrate includes one or more spacers on the substrate. The electronic assembly includes a chip comprising contact pads. The out of plane structure on the substrate touches corresponding contact pads on the chip, and the spacers on the substrate touch the chip forming a gap between the substrate and the chip.Type: GrantFiled: March 22, 2021Date of Patent: February 20, 2024Assignee: XEROX CORPORATIONInventors: Christopher L. Chua, Qian Wang, Yu Wang, Eugene M. Chow
-
Patent number: 11910682Abstract: A display apparatus includes a first substrate including a plurality of pixels provided in a display portion, a second substrate coupled to the first substrate, and a routing portion disposed on an outer surface of the first substrate and an outer surface of the second substrate. The second substrate includes a metal pattern layer connected to the routing portion and a rear insulation layer insulating the metal pattern layer and including an isolation pattern area.Type: GrantFiled: December 30, 2020Date of Patent: February 20, 2024Assignee: LG Display Co., Ltd.Inventors: YoungHo Jeon, JongHyun Park, DongHee Yoo
-
Patent number: 11903655Abstract: A system for surgical planning and assessment of spinal deformity correction is provided that has a spinal imaging system and a control unit. The spinal imaging system is configured to collect at least one digitized position of one or more vertebral bodies of a subject. The control unit is configured to receive the at least one digitized position, and calculate, based on the at least one digitized position, an optimized posture for the subject. The control unit is configured to receive one or more simulated spinal correction inputs, and based on the inputs and optimized posture, predict an optimal simulated postoperative surgical correction.Type: GrantFiled: December 23, 2022Date of Patent: February 20, 2024Assignee: Nuvasive Inc.Inventors: Alex Turner, Jeffrey Harris
-
Patent number: 11855074Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge devices and methods of manufacture. The structure includes: a plurality of regions of a first dopant type; insulator material separating each region of the plurality of regions of the first dopant type; and a substrate contacting the plurality of regions of the first dopant type, the substrate comprising a base region of a second dopant type different than the first dopant type and an outer segment surrounding the plurality of regions of the first dopant type, the outer segment comprises an electrical resistivity higher than the second dopant type.Type: GrantFiled: February 8, 2021Date of Patent: December 26, 2023Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Zhiqing Li, William J. Taylor, Jr., Anindya Nath
-
Patent number: 11856880Abstract: A semiconductor storage device includes a first region, a second region, and a third region. The first region includes first wirings extending in a first direction, second wirings extending in a second direction, and a memory cells provided at intersections of the first and second wirings. The second region includes a contact extending in a third direction. The third region includes first dummy wirings extending in the first direction, and a second dummy wirings extending in the second direction. A width in the first direction of a first one of the second dummy wirings, closest to the first region or the second region in the first direction, is equal to or less than a width in the first direction of a second one of the second dummy wirings next closest to the first region or the second region in the first direction.Type: GrantFiled: March 3, 2021Date of Patent: December 26, 2023Assignee: KIOXIA CORPORATIONInventor: Hiroyuki Ode
-
Patent number: 11830959Abstract: A photodetection device and a manufacturing method are provided. The photodetection device includes an absorption structure, a cathode, a charge multiplication region and an anode. The absorption structure is formed in a recess at a surface region of a semiconductor substrate, and configured to receive an incident light. The cathode is formed on a top surface of the absorption structure, and has a first conductive type. The charge multiplication layer is in lateral contact with the absorption structure, and is an intrinsic portion of the semiconductor substrate extending into the semiconductor substrate from a topmost surface of the semiconductor substrate. The anode is in lateral contact with the charge multiplication layer from a side of the charge multiplication region away from the absorption structure, and is a doped region in the semiconductor substrate having a second conductive type complementary to the first conductive type.Type: GrantFiled: January 29, 2021Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Tsung Shih, Felix yingkit Tsui, Stefan Rusu, Chewn-Pu Jou
-
Patent number: 11832459Abstract: The invention relates to methods for producing a light-absorbing material with a perovskite-like structure, and can be used to form a light-absorbing layer in the production of photovoltaic cells for saving the materials and increasing the allowable size of converters. These advantages are achieved by forming a uniform layer of component B on the substrate, preparing a mixture of reagents that react with component B under predetermined conditions, and a reaction inhibitor that suppresses this reaction under these conditions; the prepared mixture is applied in stoichiometric amount or greater than stoichiometric on the layer of component B and the reaction inhibitor is removed from the mixture, ensuring activation of the chemical reaction between the mixture of reagents and component B to form films of perovskite-like material.Type: GrantFiled: December 18, 2018Date of Patent: November 28, 2023Assignee: JOINT STOCK COMPANY KRASNOYARSK HYDROPOWER PLANTInventors: Evgenij Alekseevich Gudilin, Aleksej Borisovich Tarasov, Andrej Andreevich Petrov, Nikolaj Andreevich Belich, Aleksej Yur'evich Grishko
-
Patent number: 11823898Abstract: A semiconductor device is disclosed in which proton implantation is performed a plurality of times to form a plurality of n-type buffer layers in an n-type drift layer at different depths from a rear surface of a substrate. The depth of the n-type buffer layer, which is provided at the deepest position from the rear surface of the substrate, from the rear surface of the substrate is more than 15 ?m. The temperature of a heat treatment which is performed in order to change a proton into a donor and to recover a crystal defect after the proton implantation is equal to or higher than 400° C. In a carrier concentration distribution of the n-type buffer layer, a width from the peak position of carrier concentration to an anode is more than a width from the peak position to a cathode.Type: GrantFiled: December 11, 2020Date of Patent: November 21, 2023Assignee: FUJI ELECTRIC CO., LTD.Inventor: Yuichi Onozawa
-
Patent number: 11818943Abstract: Organic light-emitting diodes are disclosed comprising an electron transport layer and a hole transport layer. At least one of the transport layers is formed by (a) dissolving tubulin or microtubules in a mixture of water and a solvent that changes the surface charge of tubulin, wherein the percentage of solvent in the mixture is selected so that the tubulin acquires a desired surface charge, and (b) using the tubulin with the desired surface charge to fabricate the at least one of the transport layers. Advantageously, the solvent may be DMSO. Methods of fabricating such organic light emitting diodes are also disclosed.Type: GrantFiled: June 22, 2021Date of Patent: November 14, 2023Assignee: Novocure GmbHInventors: Aarat Pratyaksh Kalra, Jack Adam Tuszynski, Sahil Deepak Patel, Karthik Shankar
-
Patent number: 11817447Abstract: A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.Type: GrantFiled: August 6, 2020Date of Patent: November 14, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungjun Song, Hyunkwang Jeong, Changsu Kim, Chanhee Jeon