Abstract: Depositing a seed layer after formation of the MD in order to reduce or prevent epitaxial growth of the seed layer toward the MD. For example, the seed layer may be deposited using CVD and conformal dry etching. In some implementations, the seed layer may be formed of ruthenium (Ru), molybdenum (Mo), or tungsten (W). Accordingly, the seed layer helps reduce or prevent seam formation in the VG, which reduces resistance of the VG by allowing for bottom-up metal growth. Additionally, current leakage from the VG to the MD is reduced or even prevented. As a result, device performance and efficiency are increased and breakdown voltage of the gate structure is also increased. Additionally, because electrical shorts are less likely, yield is increased, which conserves power, raw materials, and processing resources that otherwise would have been consumed during manufacture.

Abstract: A package structure and a method for fabricating the same are provided. The package structure includes a substrate, a semiconductor package and an adhesive body. The substrate has a first board surface and a second board surface. The semiconductor package has an upper surface and a lower surface, is disposed on the first board surface and electrically connected to the substrate through pins, and has a first vertical projection on the first board surface. An adhesive groove is disposed on the first board surface and is located in at least one portion of the first vertical projection and a periphery of the first vertical projection. The adhesive body is disposed in the adhesive groove, and protrudes to contact the lower surface, so as to fix the semiconductor package. The adhesive groove does not overlap with the pins, and the adhesive body does not contact the pins.

Abstract: A method includes: oxidizing a target N+-type gallium oxide substrate to obtain a first N?-type gallium oxide drift layer formed on an upper surface of the target N+-type gallium oxide substrate and a second N?-type gallium oxide drift layer formed on a lower surface of the target N+-type gallium oxide substrate; preparing a first anode electrode on an upper surface of the first N?-type gallium oxide drift layer and a second anode electrode on a lower surface of the second N?-type gallium oxide drift layer; cutting the target N+-type gallium oxide substrate, to obtain a first N+-type gallium oxide substrate and a second N+-type gallium oxide substrate; and preparing a first cathode electrode on a lower surface of the first N+-type gallium oxide substrate and a second cathode electrode on an upper surface of the second N+-type gallium oxide substrate, to obtain two Schottky diodes.

Abstract: This application is directed to a light-emitting diode epitaxial wafer, a growth method therefor, and a light-emitting diode chip. The growth method comprises: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber; forming GaN crystal nuclei containing In atoms on the sapphire substrate; growing at least one composite layer on the GaN crystal nuclei, the GaN crystal nuclei growing to form a buffer layer, each composite layer comprising an InGaN sublayer and a GaN sublayer; and successively growing an N-type GaN layer, an active layer and a P-type GaN layer on the buffer layer to form an epitaxial wafer, the active layer comprising alternately stacked InGaN quantum wells and GaN quantum barriers. Large and stable GaN crystal nuclei are formed to effectively counteract stress generated by lattice mismatch between the sapphire substrate and a GaN-based material.

Abstract: A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.

Abstract: A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.

Abstract: A method comprises the steps of providing a semiconductor wafer comprising a substrate layer; forming a first alignment mark and a second alignment mark; forming a plurality of super junction buffer regions; forming additional two or more epitaxial layers; forming additional one or more alignment marks; forming a top layer; thinning the wafer; forming a first plurality of regions and a second plurality of regions; and applying a singulation process. Devices made by the method have reduced misalignment, between a top portion and a bottom portion of an interface within the devices, for less than 0.5 micron.

Abstract: The present application provides a display panel and a display device. The display panel comprises a substrate, a dam, a first metal partition structure, a common layer and a cathode. The side surface of the first metal partition structure close to a hole area is provided with a recessed first undercut structure, so as not only to prevent water vapor from laterally invading a display area via the common layer, but also to avoid electrochemical corrosion due to a conductive path formed by the charged cathode overlapping the first metal partition structure.

Abstract: A method of manufacturing a semiconductor light-emitting element includes: forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of the n-type semiconductor layer; treating the upper surface of the n-type semiconductor layer with a plasma in an atmosphere including an N2 gas and an NH3 gas; and forming a n-side contact electrode on the upper surface of the n-type semiconductor layer treated with the plasma.

Abstract: A semiconductor wafer has a first pad electrode and a plurality of second pad electrodes formed on an upper surface thereof. A first opening and a plurality of second openings are formed in an insulating film covering the first pad electrode and the plurality of second pad electrodes. The first pad electrode is electrically connected to a first redistribution wiring in the first opening, and the plurality of second pad electrodes are electrically connected to a second redistribution wiring in the plurality of second openings. The first redistribution wiring has a narrow region and a wide region, a first columnar electrode is formed on the wide region, and a second columnar electrode is formed on the first columnar electrode. A third redistribution wiring is formed on the second redistribution wiring, and a plurality of third columnar electrodes are formed on the third redistribution wiring.

Abstract: A light-emitting element includes: a light emitting layer formed of an i-type layered nitride semiconductor; a first semiconductor layer that is disposed on one surface of the light emitting layer, and is formed of a p-type layered nitride semiconductor or p-type diamond; and a second semiconductor layer that is disposed on the other surface of the light emitting layer, and is formed of an n-type layered nitride semiconductor.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: An improved silicon carbide (SiC) super junction (SJ) MOSFET having at least two buried P-shield (BPS) regions facing each other for gate oxide electric-field and saturation current reductions is disclosed. The two BPS regions are spaced apart from a body region and formed either adjoining sidewalls or below a bottom of a P column region. Moreover, a saturation current pitching (SCP) structure formed in a Junction Field Effect Transistor (JFET) region sandwiched between the two BPS regions limits saturation current of the device in a forward conduction stage for the short-circuit capability improvement.

Abstract: A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a multi-layer film. The second type semiconductor layer overlaps the first type semiconductor layer. The light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer and is located on a side of the first type semiconductor layer close to the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer and is located on a side of the second type semiconductor layer facing away from the first type semiconductor layer. The multi-layer film is located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer and has a protrusion portion.

Abstract: One aspect of this disclosure relates to a method for operating a quantum computing device. A request to execute a first n-qubit gate on a set of n target qubits is received. The first n-qubit gate is representable as an m-qubit diagonal gate conjugated by a Clifford gate, where m?n. A set of m interface qubits on which to perform the m-qubit diagonal gate are identified. A Clifford operation is executed on each interface qubit and its corresponding target qubits. The m-qubit diagonal gate is executed on the set of m interface qubits.

Abstract: A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

Abstract: A display device according to the present invention comprises: a wiring board including a plurality of pixel areas; and semiconductor light-emitting devices disposed in the pixel areas, wherein the pixel areas include semiconductor light-emitting devices having different shapes and emitting different colors, and wherein the wiring board has two or more pixel areas having different arrangements of the semiconductor light-emitting devices. The present invention may be used as an align key when manufacturing a display device by varying the arrangement of semiconductor light-emitting devices in some pixel areas.

Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: Apparatus and methods for fabricating an electronic device are provided herein. Some embodiments include selectively delivering, according to a digital transfer pattern, an electromagnetic radiation beam provided from a light source across portions of an electromagnetic radiation sensitive layer that comprises a first photosensitive layer disposed on a surface of a substrate and a second photosensitive layer disposed on the first photosensitive layer. The electromagnetic beam may be delivered at a plurality of different dosing levels. The first and second photosensitive layers have first and second exposure sensitivities. Some embodiments also include performing, after selectively delivering the electromagnetic radiation beam, a developing and/or curing process on the first and second photosensitive layers to form a first and second set of features, respectively, which are to be filled with a conductor during a deposition process.

Abstract: The present disclosure relates to a semiconductor integrated circuit device and method of manufacturing the semiconductor integrated circuit device. A semiconductor integrated circuit device including a semiconductor substrate, a first transistor, an insulation interlayer and a second transistor. The first transistor formed on the semiconductor substrate. The first transistor includes a horizontal channel substantially parallel to a surface of the semiconductor substrate. The insulating interlayer formed on an upper surface of the semiconductor substrate. A contact hole formed through the insulating interlayer. The second transistor including a channel layer formed in the contact hole. Any one of a source and a drain of the second transistor are electrically connected to any one of electrodes of the first transistor.