Abstract: A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.

Abstract: A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.

Abstract: A method comprises the steps of providing a semiconductor wafer comprising a substrate layer; forming a first alignment mark and a second alignment mark; forming a plurality of super junction buffer regions; forming additional two or more epitaxial layers; forming additional one or more alignment marks; forming a top layer; thinning the wafer; forming a first plurality of regions and a second plurality of regions; and applying a singulation process. Devices made by the method have reduced misalignment, between a top portion and a bottom portion of an interface within the devices, for less than 0.5 micron.

Abstract: The present application provides a display panel and a display device. The display panel comprises a substrate, a dam, a first metal partition structure, a common layer and a cathode. The side surface of the first metal partition structure close to a hole area is provided with a recessed first undercut structure, so as not only to prevent water vapor from laterally invading a display area via the common layer, but also to avoid electrochemical corrosion due to a conductive path formed by the charged cathode overlapping the first metal partition structure.

Abstract: A method of manufacturing a semiconductor light-emitting element includes: forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of the n-type semiconductor layer; treating the upper surface of the n-type semiconductor layer with a plasma in an atmosphere including an N2 gas and an NH3 gas; and forming a n-side contact electrode on the upper surface of the n-type semiconductor layer treated with the plasma.

Abstract: A semiconductor wafer has a first pad electrode and a plurality of second pad electrodes formed on an upper surface thereof. A first opening and a plurality of second openings are formed in an insulating film covering the first pad electrode and the plurality of second pad electrodes. The first pad electrode is electrically connected to a first redistribution wiring in the first opening, and the plurality of second pad electrodes are electrically connected to a second redistribution wiring in the plurality of second openings. The first redistribution wiring has a narrow region and a wide region, a first columnar electrode is formed on the wide region, and a second columnar electrode is formed on the first columnar electrode. A third redistribution wiring is formed on the second redistribution wiring, and a plurality of third columnar electrodes are formed on the third redistribution wiring.

Abstract: A light-emitting element includes: a light emitting layer formed of an i-type layered nitride semiconductor; a first semiconductor layer that is disposed on one surface of the light emitting layer, and is formed of a p-type layered nitride semiconductor or p-type diamond; and a second semiconductor layer that is disposed on the other surface of the light emitting layer, and is formed of an n-type layered nitride semiconductor.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: An improved silicon carbide (SiC) super junction (SJ) MOSFET having at least two buried P-shield (BPS) regions facing each other for gate oxide electric-field and saturation current reductions is disclosed. The two BPS regions are spaced apart from a body region and formed either adjoining sidewalls or below a bottom of a P column region. Moreover, a saturation current pitching (SCP) structure formed in a Junction Field Effect Transistor (JFET) region sandwiched between the two BPS regions limits saturation current of the device in a forward conduction stage for the short-circuit capability improvement.

Abstract: A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a multi-layer film. The second type semiconductor layer overlaps the first type semiconductor layer. The light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer and is located on a side of the first type semiconductor layer close to the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer and is located on a side of the second type semiconductor layer facing away from the first type semiconductor layer. The multi-layer film is located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer and has a protrusion portion.

Abstract: One aspect of this disclosure relates to a method for operating a quantum computing device. A request to execute a first n-qubit gate on a set of n target qubits is received. The first n-qubit gate is representable as an m-qubit diagonal gate conjugated by a Clifford gate, where m?n. A set of m interface qubits on which to perform the m-qubit diagonal gate are identified. A Clifford operation is executed on each interface qubit and its corresponding target qubits. The m-qubit diagonal gate is executed on the set of m interface qubits.

Abstract: A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

Abstract: A display device according to the present invention comprises: a wiring board including a plurality of pixel areas; and semiconductor light-emitting devices disposed in the pixel areas, wherein the pixel areas include semiconductor light-emitting devices having different shapes and emitting different colors, and wherein the wiring board has two or more pixel areas having different arrangements of the semiconductor light-emitting devices. The present invention may be used as an align key when manufacturing a display device by varying the arrangement of semiconductor light-emitting devices in some pixel areas.

Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: Apparatus and methods for fabricating an electronic device are provided herein. Some embodiments include selectively delivering, according to a digital transfer pattern, an electromagnetic radiation beam provided from a light source across portions of an electromagnetic radiation sensitive layer that comprises a first photosensitive layer disposed on a surface of a substrate and a second photosensitive layer disposed on the first photosensitive layer. The electromagnetic beam may be delivered at a plurality of different dosing levels. The first and second photosensitive layers have first and second exposure sensitivities. Some embodiments also include performing, after selectively delivering the electromagnetic radiation beam, a developing and/or curing process on the first and second photosensitive layers to form a first and second set of features, respectively, which are to be filled with a conductor during a deposition process.

Abstract: The present disclosure relates to a semiconductor integrated circuit device and method of manufacturing the semiconductor integrated circuit device. A semiconductor integrated circuit device including a semiconductor substrate, a first transistor, an insulation interlayer and a second transistor. The first transistor formed on the semiconductor substrate. The first transistor includes a horizontal channel substantially parallel to a surface of the semiconductor substrate. The insulating interlayer formed on an upper surface of the semiconductor substrate. A contact hole formed through the insulating interlayer. The second transistor including a channel layer formed in the contact hole. Any one of a source and a drain of the second transistor are electrically connected to any one of electrodes of the first transistor.

Abstract: A method of manufacturing a composite structure comprises: a) providing a donor substrate of a single-crystal semiconductor material, b) implanting ions into the donor substrate, excluding an annular peripheral region, to form a buried brittle plane, the implantation conditions defining a first thermal budget for obtaining bubbling on a face of the donor substrate and a second thermal budget for obtaining a fracture in the brittle plane, c) forming a stiffening film on the donor substrate, carried out by applying a thermal budget lower than the first thermal budget, the stiffening film being perforated in the form of a mesh, the perforated stiffening film leaving a plurality of zones of the front face bare, d) depositing a carrier substrate on the donor substrate carried out by applying a thermal budget greater than the first thermal budget, and e) separating the donor substrate along the brittle plane.

Abstract: A memory array comprising strings of memory cells comprises a conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Conducting material of a lowest of the conductive tiers directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. An uppermost portion of the conductor material comprises conductively-doped semiconductive material that is directly against the conducting material, of different composition from that of the conducting material, and comprises at least one of carbon, nitrogen, oxygen, metal, and n-type conductively-doped semiconductive material also comprising boron. Other embodiments, including method, are disclosed.

Abstract: A semiconductor chip includes a device layer on a substrate, the device layer including a plurality of semiconductor devices; a wiring structure and a lower inter-wiring dielectric layer each on the device layer, the lower inter-wiring dielectric layer surrounding the wiring structure and having a lower permittivity than silicon oxide; an upper inter-wiring dielectric layer arranged on the lower inter-wiring dielectric layer; an isolation recess arranged along an edge of the substrate, the isolation recess formed on side surfaces of the lower and upper inter-wiring dielectric layers and having a bottom surface at a level equal to or lower than that of a bottom surface of the lower inter-wiring dielectric layer; and a cover dielectric layer covering the side surfaces of the lower and upper inter-wiring dielectric layers and the bottom surface of the isolation recess.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes: a substrate including a first surface and a second surface, which includes a plurality of active areas arranged along a first direction and in parallel along a second direction; a plurality of first recesses arranged in the substrate; a word line gate structure disposed in a first recess, which includes a first side wall and a second side wall, wherein the second side wall is adjacent to an active area; a first isolation structure disposed in the first recess and disposed between the word line gate structure and an active area; a plurality of capacitor structures disposed on the first surface and electrically coupled with an active area; and a plurality of bit lines disposed on the second surface, which are arranged along the first direction and parallel to the second direction.