Abstract: One aspect of this disclosure relates to a method for operating a quantum computing device. A request to execute a first n-qubit gate on a set of n target qubits is received. The first n-qubit gate is representable as an m-qubit diagonal gate conjugated by a Clifford gate, where m?n. A set of m interface qubits on which to perform the m-qubit diagonal gate are identified. A Clifford operation is executed on each interface qubit and its corresponding target qubits. The m-qubit diagonal gate is executed on the set of m interface qubits.

Abstract: A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

Abstract: A display device according to the present invention comprises: a wiring board including a plurality of pixel areas; and semiconductor light-emitting devices disposed in the pixel areas, wherein the pixel areas include semiconductor light-emitting devices having different shapes and emitting different colors, and wherein the wiring board has two or more pixel areas having different arrangements of the semiconductor light-emitting devices. The present invention may be used as an align key when manufacturing a display device by varying the arrangement of semiconductor light-emitting devices in some pixel areas.

Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: Apparatus and methods for fabricating an electronic device are provided herein. Some embodiments include selectively delivering, according to a digital transfer pattern, an electromagnetic radiation beam provided from a light source across portions of an electromagnetic radiation sensitive layer that comprises a first photosensitive layer disposed on a surface of a substrate and a second photosensitive layer disposed on the first photosensitive layer. The electromagnetic beam may be delivered at a plurality of different dosing levels. The first and second photosensitive layers have first and second exposure sensitivities. Some embodiments also include performing, after selectively delivering the electromagnetic radiation beam, a developing and/or curing process on the first and second photosensitive layers to form a first and second set of features, respectively, which are to be filled with a conductor during a deposition process.

Abstract: The present disclosure relates to a semiconductor integrated circuit device and method of manufacturing the semiconductor integrated circuit device. A semiconductor integrated circuit device including a semiconductor substrate, a first transistor, an insulation interlayer and a second transistor. The first transistor formed on the semiconductor substrate. The first transistor includes a horizontal channel substantially parallel to a surface of the semiconductor substrate. The insulating interlayer formed on an upper surface of the semiconductor substrate. A contact hole formed through the insulating interlayer. The second transistor including a channel layer formed in the contact hole. Any one of a source and a drain of the second transistor are electrically connected to any one of electrodes of the first transistor.

Abstract: A method of manufacturing a composite structure comprises: a) providing a donor substrate of a single-crystal semiconductor material, b) implanting ions into the donor substrate, excluding an annular peripheral region, to form a buried brittle plane, the implantation conditions defining a first thermal budget for obtaining bubbling on a face of the donor substrate and a second thermal budget for obtaining a fracture in the brittle plane, c) forming a stiffening film on the donor substrate, carried out by applying a thermal budget lower than the first thermal budget, the stiffening film being perforated in the form of a mesh, the perforated stiffening film leaving a plurality of zones of the front face bare, d) depositing a carrier substrate on the donor substrate carried out by applying a thermal budget greater than the first thermal budget, and e) separating the donor substrate along the brittle plane.

Abstract: A memory array comprising strings of memory cells comprises a conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Conducting material of a lowest of the conductive tiers directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. An uppermost portion of the conductor material comprises conductively-doped semiconductive material that is directly against the conducting material, of different composition from that of the conducting material, and comprises at least one of carbon, nitrogen, oxygen, metal, and n-type conductively-doped semiconductive material also comprising boron. Other embodiments, including method, are disclosed.

Abstract: A semiconductor chip includes a device layer on a substrate, the device layer including a plurality of semiconductor devices; a wiring structure and a lower inter-wiring dielectric layer each on the device layer, the lower inter-wiring dielectric layer surrounding the wiring structure and having a lower permittivity than silicon oxide; an upper inter-wiring dielectric layer arranged on the lower inter-wiring dielectric layer; an isolation recess arranged along an edge of the substrate, the isolation recess formed on side surfaces of the lower and upper inter-wiring dielectric layers and having a bottom surface at a level equal to or lower than that of a bottom surface of the lower inter-wiring dielectric layer; and a cover dielectric layer covering the side surfaces of the lower and upper inter-wiring dielectric layers and the bottom surface of the isolation recess.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes: a substrate including a first surface and a second surface, which includes a plurality of active areas arranged along a first direction and in parallel along a second direction; a plurality of first recesses arranged in the substrate; a word line gate structure disposed in a first recess, which includes a first side wall and a second side wall, wherein the second side wall is adjacent to an active area; a first isolation structure disposed in the first recess and disposed between the word line gate structure and an active area; a plurality of capacitor structures disposed on the first surface and electrically coupled with an active area; and a plurality of bit lines disposed on the second surface, which are arranged along the first direction and parallel to the second direction.

Abstract: A method for inter-substrate transfer of microelectronic devices includes applying a polymer coating to a top surface of a microelectronic device located on a first substrate, depositing an ultraviolet-transmissive adhesive on a second substrate, contacting the polymer-coated top surface of the microelectronic device to the adhesive to bond the microelectronic device to the second substrate, detaching the microelectronic device from the first substrate, and, while the bottom surface of the microelectronic device faces a third substrate, irradiating and ablating the polymer coating with ultraviolet laser light through the second substrate and the adhesive to transfer the microelectronic device from the second substrate to the third substrate via laser lift-off.

Abstract: Exemplary semiconductor structures may include a silicon-containing substrate. The structures may include a layer of a metal nitride overlying the silicon-containing substrate. The structures may include a gallium nitride structure overlying the layer of the metal nitride. The structures may include an oxygen-containing layer disposed between the layer of the metal nitride and the gallium nitride structure.

Abstract: A displaying base plate and a displaying device, the displaying base plate includes a first sub-pixel unit and a second sub-pixel unit that are arranged adjacently, a substrate, and a first metal layer, a first insulating layer and a second metal layer that are arranged in stack on one side of the substrate. The first metal layer includes a first electrode block connected to a constant potential. The second metal layer includes signal lines and connecting lines; the signal lines include a first signal line and a second signal line; the connecting lines include a first connecting line and a second connecting line; the first signal line is connected to a driving circuit of the first sub-pixel unit, the second signal line is connected to a driving circuit of the second sub-pixel unit.

Abstract: An electroluminescent device that includes a first electrode and a second electrode spaced apart from each other, a light emitting layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the light emitting layer and the second electrode, and an organic layer disposed on the electron transport layer. The light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes a plurality of metal oxide nanoparticles, and the organic layer includes a polymeric acid compound.

Abstract: An image capturing device includes: a first layer, including a photoelectric converting unit configured to photoelectrically convert light and produce electric charges; a second layer, stacked with the first layer, including a first circuit configured to process a signal based on electric charges produced by the photoelectric converting unit; and a third layer, stacked with the second layer, including an insulating layer provided between a second circuit for processing a signal processed by the first circuit and the second layer, and a heat conduction layer with higher heat conductivity than the insulating layer provided in the insulating layer.

Abstract: There is provided a large-diameter Group-III element nitride semiconductor substrate including a first surface and a second surface, in which, despite its large diameter, variations in quality in the first surface are suppressed. A Group-III element nitride semiconductor includes: a first surface; and a second surface, wherein the Group-III element nitride semiconductor substrate has a diameter of 100 mm or more, and wherein the Group-III element nitride semiconductor substrate has a coefficient of variation of a yellow luminescence intensity in a range corresponding to 88% or more of an entire region of the first surface of 0.3 or less based on a photoluminescence spectrum obtained through photoluminescence measurement of a range of the entire region of the first surface.

Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.

Abstract: A pixel arrangement structure, a display panel, a display apparatus and a mask group are provided. The pixel arrangement structure includes basic pixel units in first and/or second directions. Each basic pixel unit includes five sub-pixels, first to third sub-pixels are of different colors, and third to fifth sub-pixels are of a same color; the first sub-pixel includes opposite first and second sides in the first direction, and opposite third and fourth sides in the second direction; and the second sub-pixel is on and separated from the third side of the first sub-pixel, the third sub-pixel is on and separated from the first side of the first sub-pixel, fourth and fifth sub-pixels are both on the fourth side of the first sub-pixel and are separated from the fourth side of the first sub-pixel, and are separated from each other in the first direction.

Abstract: A display substrate and a manufacturing method therefor, and a display device. The manufacturing method for the display substrate includes: forming a substrate, and forming a driving structural layer on the substrate, the driving structural layer including a thin film transistor; forming a planarization layer on the side of the driving structural layer away from the substrate, curing and polishing and planishing the planarization layer, and then forming a first via hole penetrating through the planarization layer and exposing a first pole of the thin film transistor; and forming a light emitting structural layer on the side of the planarization layer away from the substrate.