Abstract: A semiconductor device includes an interposer substrate and at least one die mounted on the interposer substrate. The interposer substrate includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, an interlayer insulating layer on the first surface of the semiconductor substrate, a capacitor in a hole penetrating the interlayer insulating layer, an interconnection layer on the interlayer insulating layer, and a through-via extending from the interconnection layer toward the second surface of the semiconductor substrate in a vertical direction that is perpendicular to the first surface of the semiconductor substrate. The capacitor includes a sequential stack of a first electrode, a first dielectric layer, a second electrode, a second dielectric layer and a third electrode. A bottom of the hole is distal from the second surface of the semiconductor substrate in relation to the first surface of the semiconductor substrate.

Abstract: Devices and/or computer-implemented methods to facilitate a quantum gate between qubits using a tunable coupler and a capacitor device are provided. According to an embodiment, a quantum coupler device can comprise a tunable coupler coupled between terminals of a same polarity of a first qubit and a second qubit, the tunable coupler configured to control a first coupling between the first qubit and the second qubit. The quantum coupler device can further comprise a capacitor device coupled to terminals of an opposite polarity of the first qubit and the second qubit, the capacitor device configured to provide a second coupling that is opposite in sign relative to the first coupling.

Abstract: A method of manufacturing a display device is disclosed. A light emitting unit is provided. The light emitting unit has a chip and at least one bonding pin. The light emitting unit is mounted on the substrate through the at least one bonding pin, and an adhesive material is applied to a space between the chip and the substrate.

Abstract: A semiconductor package may include a lower package including a first substrate, a first semiconductor chip on the first substrate, and a first molding portion on the first substrate to cover the first semiconductor chip, an interposer substrate on the first semiconductor chip, a supporting portion between the interposer substrate and the first substrate to support the interposer substrate, a connection terminal connecting the interposer substrate to the first substrate, and an upper package on the interposer substrate. The upper package may include a second substrate, a second semiconductor chip on the second substrate, and a second molding portion on the second substrate to cover the second semiconductor chip.

Abstract: A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

Abstract: Methods, systems and apparatus for determining operating parameters for a quantum processor including multiple interacting qubits. In one aspect, a method includes generating a graph of nodes and edges, wherein each node represents a respective qubit and is associated with an operating parameter of the respective qubit, and wherein each edge represents a respective interaction between two qubits and is associated with an operating parameter of the respective interaction; selecting an algorithm that traverses the graph based on a traversal rule; identifying one or multiple disjoint subsets of nodes or one or multiple disjoint subsets of edges, wherein nodes in a subset of nodes and edges in a subset of edges are related via the traversal rule; and determining calibrated values for the nodes or edges in each subset using a stepwise constrained optimization process where constraints are determined using previously calibrated operating parameters.

Abstract: Provided are a transfer method, a display device, and a storage medium. The transfer method includes: performing partial cutting on preset scribe lines (22) on an epitaxial layer to obtain to-be-transferred wafers (24) after cutting (S1); adhering a temporary substrate (26) on the to-be-transferred wafers (24) through adhering a first release adhesive (25) to first side faces of the to-be-transferred wafers (24), and removing a growth substrate (21) (S2); adhering the to-be-transferred wafers (24) to the blue tape (28) through adhering a second release adhesive (27) to second side faces of the to-be-transferred wafers (24), and removing the temporary substrate (26) (S3); jacking up the blue tape (28) with a roller so that remaining scribe lines (23) on the to-be-transferred wafers (24) are separated by breaking under action of stress (S4).

Abstract: Degeneracy in analog processor (e.g., quantum processor) operation is mitigated via use of floppy qubits or domains of floppy qubits (i.e., qubit(s) for which the state can be flipped with no change in energy), which can significantly boost hardware performance on certain problems, as well as improve hardware performance for more general problem sets. Samples are drawn from an analog processor, and devices comprising the analog processor evaluated for floppiness. A normalized floppiness metric is calculated, and an offset added to advance the device in annealing. Degeneracy in a hybrid computing system that comprises a quantum processor is mitigated by determining a magnetic susceptibility of a qubit, and tuning a tunneling rate for the qubit based on a tunneling rate offset determined based on the magnetic susceptibility. Quantum annealing evolution is controlled by causing the evolution to pause for a determined pause duration.

Abstract: A light emitting diode (LED) including a first contact. The LED further includes a first semiconductor layer over the first contact. The first semiconductor layer comprises hexagonal Boron Nitride. Additionally, the LED includes a second semiconductor layer over the first semiconductor layer. The second semiconductor layer comprises at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier. Moreover, the LED includes a third semiconductor layer over the second semiconductor layer. The third semiconductor layer comprises hexagonal Boron Nitride. Further, the LED includes a second contact over the third semiconductor layer.

Abstract: Systems and techniques that facilitate quantum tuning via permanent magnetic flux elements are provided. In various embodiments, a system can comprise a qubit device. In various aspects, the system can further comprise a permanent magnet having a first magnetic flux, wherein an operational frequency of the qubit device is based on the first magnetic flux. In various instances, the system can further comprise an electromagnet having a second magnetic flux that tunes the first magnetic flux. In various cases, the permanent magnet can comprise a nanoparticle magnet. In various embodiments, the nanoparticle magnet can comprise manganese nanoparticles embedded in a silicon matrix. In various aspects, the system can further comprise an electrode that applies an electric current to the nanoparticle magnet in a presence of the second magnetic flux, thereby changing a strength of the first magnetic flux.

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

Abstract: A memory device includes a substrate, a buried word line, a connecting structure, an air gap, and a first dielectric layer. The buried word line is disposed in the substrate. The connecting structure is disposed on the buried word line. The air gap is disposed on the buried word line and is adjacent to the connecting structure. The first dielectric layer is disposed on the connecting structure and the air gap, wherein the buried word line, the connecting structure, and the first dielectric layer are disposed in the first direction, which is substantially perpendicular to the top surface of the substrate.

Abstract: A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the

Abstract: A method includes attaching an integrated circuit chip module substrate to a printed circuit board (PCB). First region(s) of a bottom surface of the module include electrical contacts to the board, and second region(s) of the bottom surface of the module lack such contacts. Mechanical structures are assembled into the second regions. These structures allow lateral motion of the module relative to the board, and are sized and placed to inhibit bending of the second regions of the module towards the board under application of a vertical force on a top surface of the module. A package for an integrated circuit may be assembled using the method.

Abstract: Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.

Abstract: The present application discloses a method for fabricating a semiconductor device with air gaps for reducing capacitive coupling between conductive features. The method includes the following operations: forming a first conductive line including a first protruding portion protruding from one side of the first conductive line, forming a second conductive line including a second protruding portion facing onto the first protruding portion and protruding from one side of the second conductive line, forming a void between the first protruding portion and the second protruding portion, and performing an etch process to expand the void into an air gap.

Abstract: In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: A light-emitting module includes (i) a board provided with: a circuit pattern and a plurality of bottomed holes in each of a set of wiring pads continuous with the circuit pattern on a first surface; electrically conductive paste extending over two or more of the bottomed holes; and an insulating resin covering the electrically conductive paste at a side close to the first surface, and (ii) a plurality of light-emitting segments connected to a second surface of the board with an adhesive sheet interposed therebetween. The light-emitting segments each include a plurality of light-emitting devices that are aligned. The electrically conductive paste includes a portion disposed on a portion of a surface of the wiring pad extending over two or more of the bottomed holes.