Abstract: A process for applying a chromized layer on a substrate by first applying an overlay coating to a portion of the substrate, and subsequently contacting a different portion of the substrate and the overlay with a gas containing gaseous chromium, wherein the gaseous chromium can be generated from a chromium source and an activator. The process prepares the substrate, often a jet engine airfoil, for service.

Abstract: A coating method based on gas phase deposition by arc evaporation, with the steps: selecting a first target as a material source for the coating; providing a coating chamber with an arc evaporation source including the selected target; loading the chamber with substrates to be coated; pumping down the chamber to a process pressure suitable for the arc evaporation; and igniting and operating the arc such that material is evaporated from the first target and is then deposited on the substrates to be coated, optionally after reaction with a reactive gas admitted into the coating chamber. The first target includes at least one matrix component and one doping component such that the doping component has a melting point at least 500° C. lower than the matrix component, and a melted drop of the doping component on a solid surface of the matrix component assumes a contact angle of a least 90°.

Abstract: A method to apply nano-crystalline diamond onto a selected substrate, including preparing Nanodiamond slurry of Nanodiamond particles dispersed in a medium. The medium may include a liquid or a sol-gel. The selected substrate is immersed in the Nanodiamond slurry for a predetermined period of time. Then the substrate is removed from the slurry. The substrate is then dried with a flow of inert gas. The substrate is left coated with a coating of the nanodiamond particles that are highly adherently held by van der Waals forces.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Abstract: A method for forming an oxide layer having improved thickness uniformity on a substrate is disclosed. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

Abstract: A method for depositing material layers with gap variation between film deposition operations is provided. A material layer is deposited over a substrate and is performed in a plasma chamber having a bottom electrode and a top electrode. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. Setting a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is from the first and second films and the first gap is varied to the second gap to offset pre-characterized non-uniformities when depositing the first film followed by the second film.

Abstract: A low-k dielectric porous silicon oxycarbon layer is formed within an integrated circuit. In one embodiment, a porogen and bulk layer containing silicon oxycarbon layer is deposited, the porogens are selectively removed from the formed layer without simultaneously cross-linking the bulk layer, and then the bulk layer material is cross-linked. In other embodiments, multiple silicon oxycarbon sublayers are deposited, porogens from each sub-layer are selectively removed without simultaneously cross-linking the bulk material of the sub-layer, and the sub-layers are cross-linked separately.

Abstract: A method for the manufacture of stable amorphous secondary explosives and combinations thereof—wherein the stability is enhanced with the addition of a polymeric additives and can be further enhanced with mechanical compression of the amorphous material.

Abstract: Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.

Abstract: A simple, economical method of producing nanowire arrays is described. The method produces high density arrays having nanowires with diameters below 10 nm and does not require templating, catalysts, or surface pre/post-treatment. The disclosed methods and systems can be used, for example, for optoelectronic devices and photovoltaic cells, Li-ion batteries, chemical/bio sensors and transistors.

Abstract: Methods and apparatus for remote plasma processing are provided. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.

Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.

Abstract: The present invention is directed to a golf ball having a cover in which the dimples have two distinct hardness regions. The cover of the present invention is formed from a castable formulation including at least one prepolymer that incorporates some degree of unsaturation in the backbone of the polymer, at least one curative, and at least one free radical initiator. The present invention also explores the methods of making such golf balls. The methods of the present invention allow for the production of a golf ball dimple with two distinct hardnesses to be formed using a single castable formulation.

Abstract: A method of manufacturing a microarray substrate having improved reliability and mass-production properties uses a vapor of a surface-reforming material, and includes washing a base substrate, supplying the vapor of the surface-reforming material into a container to which the base substrate is provided, and coupling the vapor of the surface-reforming material to a surface of the base substrate to form a self-assembled monolayer.

Abstract: Polycrystalline silicon with low contamination by impurities, especially boron and phosphorus, is manufactured by the Siemens process or by the fluidized bed process, in which deposition of polycrystalline silicon takes place in a reactor maintained within a clean room of the 1 to 100,000 class, and air entering the facility enclosing the reactors is filtered by a multiple stage filtration system wherein coarse and fine filter elements contain less than 0.1% by weight of boron and phosphorus and less than 0.01% by weight of arsenic and aluminum. Following production of the polycrystalline silicon, the polycrystalline silicon may be further treated by steps such as comminution, classifying, wet-chemical treatment, and packing, all these further steps also preferably taking place within a clean room of the 1 to 100,000 class.