Abstract: A method of fabricating a component for use in a watch includes a step of depositing a first thin film on a wafer wherein the first thin film is adapted to allow light reflected away from the wafer to be indicative of a first color characteristic. The step of depositing the first thin film is performed by using a plasma-enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process. The method may further include a step of fabricating a second color characteristic, including defining a pattern on the first thin film using photolithography, and, processing a region within a boundary of the pattern so that the region is adapted to allow light reflected away from the wafer to be indicative of the second color characteristic. The step of processing the region within the boundary of the pattern includes depositing a metal or a ceramic material within the boundary of the pattern which is indicative of the second color characteristic.

Abstract: Methods for depositing film on substrates are provided. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. The methods herein can be used to address the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.

Abstract: A method of making an aluminum nitride (AlN) buffer layer over a silicon wafer for a light emitting diode (LED) includes preflowing a first amount of ammonia that is sufficient to deposit nitrogen atoms on the surface of a silicon wafer without forming SiNx, before flowing trimethylaluminum and then a subsequent amount of ammonia through the chamber.

Abstract: A composite material part having a matrix made of ceramic, at least for the most part, is fabricated by a method including making a fiber preform from silicon carbide fibers containing less than 1 at % oxygen; depositing a boron nitride interphase on the fibers of the preform, deposition being performed by chemical vapor infiltration at a deposition rate of less than 0.3 ?m/h; performing heat treatment to stabilize the boron nitride of the interphase, after the interphase has been deposited, without prior exposure of the interphase to an oxidizing atmosphere and before depositing matrix layer on the interphase, the heat treatment being performed at a temperature higher than 1300° C. and not less than the maximum temperature to be encountered subsequently until the densification of the preform with the matrix has been completed; and thereafter, densifying the perform with a matrix that is made of ceramic, at least for the most part.

Abstract: A method of manufacturing a semiconductor device is provided which includes a step of performing a cycle, a predetermined number of times, to form a film on a substrate, the cycle including non-simultaneously performing: (a) a step of supplying a source gas to the substrate in a process chamber; (b) a step of removing the source gas from the process chamber; (c) a step of supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and (d) a step of removing the reactive gas from the process chamber, wherein the (d) includes alternately repeating: (d-1) a step of exhausting an inside of the process chamber to depressurize the inside of the process chamber; and (d-2) a step of purging the inside of the process chamber using an inert gas.

Abstract: Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.

Abstract: Unique and improved chromizing processes are disclosed. The processes involve forming localized chromizing coatings onto selected regions of a substrate. The chromium diffusion coatings are locally applied to selected regions of substrates in a controlled manner, in comparison to conventional chromizing processes, and further in a manner that produces less material waste and does not require masking. A second coating can be selectively applied onto other regions of the substrate.

Abstract: A method of manufacturing a patterned substrate for culturing cells. The method includes the steps of: (1) preparing a substrate, (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption, and wherein the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage, (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed, and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells, whereby the patterned substrate is obtained.

Abstract: A method of performing an oxygen radical enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming an ozone plasma to generate oxygen radicals O*. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the substrate surface. A system for performing the oxygen radical enhanced atomic-layer deposition process is also disclosed.

Abstract: In a method for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract: A raw material gas supply method for use in a film forming apparatus which forms a film on a substrate, includes supplying a carrier gas to a gas phase zone defined inside a raw material container accommodating a liquid or solid raw material, vaporizing the raw material, supplying a raw material gas containing the vaporized raw material from the raw material container to the film forming apparatus via a raw material gas supply path, measuring a flow rate of the vaporized raw material flowing through the raw material gas supply path, comparing the flow rate of the vaporized raw material obtained by the flow rate measurement unit with a predetermined target value, and controlling an internal pressure of the raw material container to be increased when the flow rate is higher than the predetermined target value, and to be decreased when the is lower than the predetermined target value.

Abstract: Deposition of material is performed on a substrate by causing short-distance reciprocating motions of the substrate that improve uniformity of material on the substrate. A series of reactors for injecting material onto the substrate is arranged along the length of the substrate in a repeating manner. During each reciprocating motion, the susceptor moves a distance shorter than an entire length of the substrate. Portions of the substrate are injected with materials by a subset of reactors. Since the movement of the substrate is smaller, a linear deposition device including the susceptor may be made smaller.

Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

Abstract: A process for conducting vapor phase deposition is disclosed. The process separates a series of reactions through a sequence of reaction reservoirs. The reactor includes a reactive precursor reservoir beneath a powder reservoir separated by valve means. A reactive precursor is charged into the reactive precursor reservoir and a powder is charged into the powder reservoir. The pressures are adjusted so that the pressure in the reactive precursor reservoir is higher than that of the powder reservoir. The valve means is opened, and the vapor phase reactant fluidized the powder and coats its surface. The powder falls into the reactive precursor reservoir. The apparatus permits vapor phase deposition processes to be performed semi-continuously.

Abstract: Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400° C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400° C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.

Abstract: A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Abstract: Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.

Abstract: A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Abstract: An apparatus for the plasma coating of a substrate, in particular a press platen, is provided and is used to perform a method to plasma coat the press platen. The apparatus includes a vacuum chamber and, arranged therein, an electrode, which is segmented. Each of the electrode segments has a dedicated connection for an electrical source. Also provided is the method for operating the apparatus. According to the method, a substrate to be coated is positioned opposite the electrode and at least one energy source that is assigned to an electrode segment is activated. Moreover, a gas is introduced, with the effect of bringing about plasma-enhanced chemical vapor deposition on the substrate.

Abstract: The method of the present invention is related to a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. The method of the present invention includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.