Abstract: In a method of suppressing abnormal discharge through a space between a space and a susceptor, a pulse-modulated high frequency wave is supplied from at least one of a first high frequency power supply and a second high frequency power supply. In addition, a DC voltage, which is pulse-modulated in synchronization with the modulated high frequency wave, is applied to the susceptor from a voltage application unit. A voltage value of the modulated DC voltage is set to reduce a difference between a potential of the substrate placed on an electrostatic chuck and a potential of the susceptor.

Abstract: A method of manufacturing a coated structure on a substrate includes positioning a substrate in a vapor deposition chamber having a crucible with source material. The method includes evaporating the source material with electron beams from an irradiation source, the evaporated source material being deposited on the substrate as a coating layer. The method includes ablating the coating layer with the electron beams to selectively remove portions of the coating layer leaving a circuit structure on the substrate. The evaporating and ablating are accomplished in situ within the vapor deposition chamber using the same irradiation source.

Abstract: An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.

Abstract: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.

Abstract: An system and method for controlling a plasma chamber includes operably coupling an RF generator to the plasma chamber, the RF generator providing an RF signal to a chamber input of the plasma chamber; measuring a parameter at the chamber input; determining a rate of change based on the measured parameter; detecting an excessive rate of change condition comprising the rate of change exceeding a reference rate of change; detecting a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; upon detection of the repetitive change condition, decreasing a power of the RF signal provided to the chamber input.

Abstract: Methods and apparatus disclosed herein relate to the formation and use of undercoats on the interior surfaces of reaction chambers used to deposit films on substrates. The undercoats are deposited through atomic layer deposition methods. For example, the undercoat may be formed by flowing a first reactant into the reaction chamber, flowing a second reactant into the reaction chamber while the first reactant is adsorbed on interior surfaces of the reaction chamber, and exposing the reaction chamber to plasma to form the undercoat. The disclosed undercoats help prevent metal contamination, provide improved resistance to flaking, and are relatively thin. Because of the superior resistance to flaking, the disclosed undercoats allow more substrates to be processed between subsequent cleaning operations, thereby increasing throughput.

Abstract: Vapor deposition methods to form Group 8-containing films are disclosed. The vapor of a Group-8 containing film forming composition is introduced into a reactor containing a substrate. The Group 8-containing film forming compositions comprise silylamide-containing precursors, particularly {Fe[N(SiMe3)2]2}2. At least part of the silylamide-containing precursor is deposited onto the substrate to from the Group 8-containing film.

Abstract: A method of treating a carbon-carbon structure is provided. The method includes the step of infiltrating the carbon-carbon structure with a ceramic preparation comprising an oxide compound and at least one of a boron compound or an oxide-boron compound to obtain a uniform distribution of the ceramic preparation within a porosity of the carbon-carbon structure. The carbon-carbon structure may be densified by chemical vapor infiltration (CVI) and heat treated to form borides. Heat treating the carbon-carbon may comprise a temperature ranging from 1000° C. to 1900° C.

Abstract: After a sample such as a biomedical tissue section is attached to an electrically-conductive slide glass (S1), the film layer of a matrix substance is appropriately formed by vapor deposition so as to cover the sample (S2). The crystal of the matrix substance in the film layer is very fine and uniform. Subsequently, the slide glass on which the matrix film layer is formed is placed in a vaporized solvent atmosphere, and the solvent infiltrates into the matrix film layer (S3). When the solvent sufficiently infiltrated is vaporized, a substance to be measured in the sample takes in the matrix and re-crystallized. Furthermore, the matrix film layer is formed again on the surface by the vapor deposition (S4). The added matrix film layer absorbs excessive energy of a laser beam during MALDI, which suppresses the denaturation of the substance to be measured and the like, so that high detection sensitivity can be achieved while high spatial resolution is maintained.

Abstract: Methods for providing one or more coating layers on a surface of a substrate by successive surface reactions of at least a first and second precursor are provided. The methods generally include supplying the first precursor from a first precursor nozzle and the second precursor from a second precursor nozzle to the surface of the substrate, and moving the substrate relative to at least one of the first and second precursor nozzle. The methods can further include subjecting only one or more first limited sub-areas of the surface of the substrate to the first and second precursor by cooperation of supplying the first and second precursor and simultaneously moving the substrate relative to at least one of the first and second precursor nozzle.

Abstract: A high strength ceramic matrix composite and method for same is provided. A fiber preform is provided that is either self-supporting or is constrained by a tool for subsequent processing. The preform is coated with about 0.1 ?m to about 5 ?m of silicon carbide. The silicon carbide is coated with about 0.05 ?m to about 2 ?m boron nitride, carbon, or other interface layer. The interface layer is coated with at least about 0.2 ?m to about 40 ?m of silicon carbide.

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.

Abstract: A polymerized film forming method for forming a polymerized film on a target surface of a target object by using a first raw material gas containing acid dianhydride and a second raw material gas containing diamine, the method comprising performing a surface treatment on the target surface by supplying a gas containing an adhesion promoting agent for enhancing adhesion between the target surface and the polymerized film, and supplying the first raw material gas and the second raw material gas to the surface-treated target surface to form the polymerized film, wherein when performing the surface treatment, at least one of the first raw material gas and the second raw material gas is supplied in addition to the gas containing the adhesion promoting agent.

Abstract: A film deposition method includes placing a substrate in a substrate receiving portion of a table provided in a vacuum chamber; and performing, at least once, a film deposition-alteration step and an alteration step. The film deposition-alteration step includes an adsorption step of allowing a first reaction gas to be adsorbed on an upper surface, a reaction product production step of allowing a second reaction gas and the first reaction gas adsorbed on the upper surface to react each other, thereby producing a reaction product, and an alteration process of allowing the upper surface to be exposed to plasma into which an alteration gas is activated. The first reaction gas is supplied from the first reaction gas supplying portion, the second reaction gas is supplied from the second reaction gas supplying portion, and the alteration is supplied from the plasma.

Abstract: Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.

Abstract: A method of adjusting vapor-phase growth apparatuses in which the individual difference of a heater-set temperature and a surface temperature of substrate-mounted plate among the vapor-phase growth apparatuses is eliminated.

Abstract: Methods are provided for forming a thermal barrier coating system on a surface of a component. The method can include introducing the component into a coating chamber, where a first ceramic source material and a second ceramic source material are positioned within the coating chamber of a physical vapor deposition apparatus. An energy source is directed onto the first ceramic source material to vaporize the first ceramic source material to deposit a first layer on the component. The energy source is alternated between the first ceramic source material and the second ceramic source material to form a blended layer on the first layer.

Abstract: Method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.