Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Abstract: A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

Abstract: A method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container, includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Abstract: A method for creating a flat optical structure is disclosed, having steps of providing a substrate, etching at least one nanotrench in the substrate, placing a dielectric material in the at least one nanotrench in the substrate and encapsulating a top of the substrate with a film.

Abstract: A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.

Abstract: Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.

Abstract: A process for the uniform controlled growth of materials on a substrate that directs a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow of the same precursor, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow having a non-uniform pulse profile.

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described.

Abstract: Transition metal dichalcogenides (TMDs) are deposited as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface.

Abstract: A method of making an electrocaloric element includes forming conductive layers on opposing surfaces of a film comprising an electrocaloric material to form an electrocaloric element, wherein the forming of the conductive layers includes one or more of: vapor deposition of the conductive layers under reduced pressure for a duration of time, wherein the duration of time under reduced pressure is less than 240 minutes; vapor deposition of the conductive layers under reduced pressure for a duration of time, wherein the duration of time of exposure to conductive material deposition is less than 240 minutes; vapor deposition of the conductive layers under reduced pressure, wherein the reduced pressure is 10?8 torr to 500 torr; or maintaining the film at a temperature of less than or equal to 200° C. during forming of the conductive layers.

Abstract: A method of manufacturing a bifunctional electrocatalyst for overall water splitting comprising oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) by growing electrocatalyst comprising primarily metallic phosphides on a three-dimensional substrate by: immersing the substrate in an iron nitrate solution to form a once disposed substrate; subjecting the once disposed substrate to thermal phosphidation with phosphorus powder under inert gas to grow metal phosphides thereupon and form a once subjected substrate; cooling the once subjected substrate to form a cooled, once subjected substrate; immersing the cooled, once subjected substrate in an iron nitrate solution to form a twice disposed substrate; and subjecting the twice disposed substrate to thermal phosphidation with phosphorus powder under inert gas to provide an electrode comprising the bifunctional electrocatalyst on the three-dimensional substrate.

Abstract: A clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon, can be obtained from a silicon rod by before crushing a polycrystalline silicon rod, removing at least 70 mm of a polycrystalline silicon portion from the electrode side end of the polycrystalline silicon rod extracted to the outside of a reactor is provided. Thereby, the polycrystalline silicon portion in which the total of the chromium, iron, nickel, copper, and cobalt concentrations in a bulk is not less than 150 ppta can be removed.

Abstract: A method for applying a polydimethylsiloxane coating having a thickness in the range of from about 35 nm to about 85 nm on a tissue sealing plate. The method includes: placing the electrically conductive component into a plasma deposition chamber; supplying an ionizable media into the plasma deposition chamber; igniting the ionizable media to generate a first plasma at a first power level to prepare the electrically conductive component to receive the coating; supplying the ionizable media and a precursor composition into the plasma deposition chamber; and igniting the ionizable media and the precursor composition to generate a second plasma at a second power level thereby forming the coating on the electrically conductive component.

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

Abstract: A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.