Abstract: A fracture fixation system includes a plate having a laterally extending bore passing therethrough and configured to receive a first wire when the plate is placed in contact with a bone. The plate has a recess for receiving and securing a first end of a first wire, and includes an entry hole and an exit hole to at opposite ends of a first bore to allow the first wire to pass through the plate. A screw is configured to capture said the wire in the first bore to maintain a desired tension on the first wire.

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with a superlattice layer and methods to form the same. The bipolar transistor structure may have a semiconductor layer of a first single crystal semiconductor material over an insulator layer. The semiconductor layer includes an intrinsic base region having a first doping type. An emitter/collector (E/C) region may be adjacent the intrinsic base region and may have a second doping type opposite the first doping type. A superlattice layer is on the E/C region of the semiconductor layer. A raised E/C terminal, including a single crystal semiconductor material, is on the superlattice layer. The superlattice layer separates the E/C region from the raised E/C terminal.

Abstract: Provided is a package structure, including a die, a plurality of through vias, an encapsulant, a plurality of first connectors, a warpage control material and a protection material. The plurality of through vias are disposed around the die. The encapsulant laterally encapsulate the die and the plurality of through vias. The plurality of first connectors are electrically connected to a first surface of the plurality of through vias. The warpage control material is disposed over a first surface of the die. The protection material is disposed over the encapsulant, around the plurality of first connectors and the warpage control material. A Young's modulus of the warpage control material is greater than a Young's modulus of the encapsulant, and the Young's modulus of the encapsulant is greater than a Young's modulus of the protection material.

Abstract: A method includes forming a transistor, which includes forming a dummy gate stack over a semiconductor region, and forming an Inter-Layer Dielectric (ILD). The dummy gate stack is in the ILD, and the ILD covers a source/drain region in the semiconductor region. The method further includes removing the dummy gate stack to form a trench in the first ILD, forming a low-k gate spacer in the trench, forming a replacement gate dielectric extending into the trench, forming a metal layer to fill the trench, and performing a planarization to remove excess portions of the replacement gate dielectric and the metal layer to form a gate dielectric and a metal gate, respectively. A source region and a drain region are then formed on opposite sides of the metal gate.

Abstract: A pivotal bone anchor assembly includes a receiver having a central bore with a spherical seating surface adjacent a bottom opening and upright arms defining a channel for receiving a rod. The upright arms include side outer surfaces with horizontal tool engagement grooves spaced below top surfaces and having downwardly-facing upper groove surfaces and upwardly-facing lower groove surfaces that extend to front and back planar surface portions of the upright arms. The upright arms also include vertical tool engagement slots extending into and downward across the side outer surfaces from the top surfaces through to at least the upper groove surfaces of the horizontal tool engagement grooves. The assembly also includes a shank having an anchor portion for attachment to patient bone and a capture portion with a curvate lower surface configured for slidable engagement with the spherical seating surface of the receiver prior to locking the assembly with a closure.

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

Abstract: A light emitting device includes: a light emitting element; a wavelength conversion member including: a wavelength conversion portion arranged on or above an upper surface of the light emitting element, and a light-transmissive portion, wherein, in a plan view, the light-transmissive portion surrounds at least one or more lateral surfaces of the wavelength conversion portion; a sealing member comprising a lens portion that is arranged on or above an upper surface of the wavelength conversion member; and a light reflection member that surrounds one or more lateral surfaces of the wavelength conversion member. In a plan view, the wavelength conversion member is inside a perimeter of the lens portion.

Abstract: A TFL Protector for use during a total hip arthroplasty having a generally semi-circular or U-shaped elongate body includes a distal end, a proximal end, an elbow and a convex surface opposite a concave surface. The generally U-shaped or semi-circular elongated body extends from the distal end to the proximal end and the proximal end turns back toward back toward the distal end at elbow.

Abstract: Devices and methods for performing a surgical step or surgical procedure with visual guidance using an optical head mounted display are disclosed.

Abstract: A monolithic tissue screw fabricated of a single, unitary piece of material. The monolithic tissue screw has a helical coil portion and screw head portion with a driver aperture passing axially through the screw head portion and a co-axial with the helical coil portion such that a rotational torsional force applied by a mating driver to the driver aperture causes the helical coil portion to rotate about its axis. The helical coil portion engages tissue and draws the helical coil and the screw head portion into the tissue substantially only with the application of the rotational torsional force and substantially without an axial force applied to the tissue screw.

Abstract: An embedded chip package according to an embodiment of the present application may include at least one chip and a frame surrounding the at least one chip, the chip having a terminal face and a back face separated by a height of the chip, the frame having a height equal to or larger than the height of the chip, wherein the gap between the chip and the frame is fully filled with a photosensitive polymer dielectric, the terminal face of the chip being coplanar with the frame, a first wiring layer being formed on the terminal face of the chip and a second wiring layer being formed on the back face of the chip.

Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.

Abstract: A variable length headless compression screw insertion system includes a compression screw and a driver assembly for driving the compression screw into a bone. The compression screw has a bone screw and a compression sleeve coupled to the bone screw. The bone screw includes a proximal end having an external threading threadably received in the compression sleeve, and the compression sleeve includes a proximal end having a predefined drive feature and an external threading. The driver assembly includes a sleeve coupler adapted to threadably receive the external threading of the compression sleeve. A ram driver is coupled to the sleeve coupler and has a predetermined length such that its distal end is shaped to contact the proximal end of the bone screw to prevent translation of the bone screw relative to the compression sleeve.

Abstract: Methods are provided of selectively obtaining n-type and p-type regions from the same III-Nitride layer deposited on a substrate without using diffusion or ion-implantation techniques. The III-Nitride layer is co-doped simultaneously with n-type and p-type dopants, with p-type dopant concentration higher than n-type dopant to generate p-n junctions. The methods rely on obtaining activated p-type dopants only in selected regions to generate p-type layers, whereas the rest of the regions effectively behave as an n-type layer by having deactivated p-type dopant atoms.

Abstract: System, including methods and devices, for fixing bone. The system may include a bone plate having two or more plate members connected to one another with one or more movable joints. Each joint may permit the orientation of the plate members to be adjusted relative to one another in a single plane or two or more nonparallel planes. The joint may have a movable configuration and a fixed configuration. Methods of creating the bone plate are also provided.

Abstract: The light emitting device includes: at least one light emitting element including a light-extracting surface and at least one lateral surface; a wavelength converting member including; a first upper surface and a second upper surface, a lower surface located at an opposite side from the first upper surface and the second upper surface, at least one first lateral surface connecting the second upper surface and the first upper surface, and at least one second lateral surface connecting the second upper surface and the lower surface, in which a thickness between the lower surface and the first upper surface is smaller than a thickness between the lower surface and the second upper surface, and the first upper surface is located at an opposite side from the light-extracting surface of a corresponding one of the at least one light emitting element, and the lower surface is located facing the light-extracting surface of the corresponding one of the at least one light emitting element; a covering member covering the

Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about ?10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.

Abstract: A display device includes a substrate, a first light-emitting diode, an encapsulant and a first Fresnel lens. The first light emitting diode is located on the substrate. The encapsulant covers the first light emitting diode. The first Fresnel lens is located on the encapsulant and overlapping with the first light emitting diode. The width of the first Fresnel lens is 4 to 10 times the width of the first light emitting diode.