Abstract: A display apparatus includes: a substrate including a plurality of sub-pixels; an organic light emitting element formed in each of the plurality of sub-pixels; a light control member including a light control pattern disposed in each of the plurality of sub-pixels, and an air layer between adjacent light control patterns; and a color filter layer disposed on the light control member.

Abstract: Provided is a display device including a substrate including a display area and a contact area located in a display area, a power line disposed in a display area on a substrate and overlapping a contact area, a passivation layer disposed on a substrate and a power line, and an opening exposing at least a portion of an upper surface of a power line in a contact area defined in a passivation layer, a via insulation layer disposed on a passivation layer, including a via contact hole connected to an opening in a contact area, and including a protrusion protruding toward a center of a via contact hole, and a common electrode disposed on a via insulation layer and a power line and electrically connected to a power line in a contact area.

Abstract: A light-emitting device includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and a hole transport layer disposed between the first electrode and the light-emitting layer, wherein the light-emitting layer includes a first quantum dot including a first core with an emission peak in a visible light region, and a second quantum dot including a second core with an emission peak in a near-ultraviolet region or an ultraviolet region.

Abstract: A memory structure includes a substrate. The memory structure further includes a first transistor, wherein the first transistor is a first distance from the substrate. The memory structure further includes a second transistor, wherein the second transistor is a second distance from the substrate, and the first distance is different from the second distance, and a first source/drain (S/D) region of the first transistor is connected to a second S/D region of the second transistor. The memory structure further includes a plurality of storage elements electrically connected to both the first transistor and the second transistor, wherein each of the plurality of storage elements is a third distance from the substrate, and the third distance is different from both the first distance and the second distance.

Abstract: A memory device includes a first alternating stack including first insulating layers and first electrically conductive layers that are interlaced along a vertical direction, where a first stepped cavity located inside the first alternating stack includes a first stepped bottom surface containing horizontally-extending surface segments of the first electrically conductive layers, a memory opening vertically extending through each layer within the first alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements, a first insulating spacer contacting sidewalls of the first stepped cavity, and a first electrically conductive strip including a first horizontally-extending bottom strip segment contacting one of the first electrically conductive layers, a first horizontally-extending top strip segment that overlies a topmost layer within the first alternating stack, and a first vertically-extending strip segment connecting the first horizontally-

Abstract: A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.

Abstract: Disclosed is a semiconductor fabrication method comprising forming a first conductive structure and a second conductive structure, measuring a misalignment value between the first conductive structure and the second conductive structure, based on the measured misalignment value selecting a reticle from a set of reticles, and using the selected reticle to form a connection conductive structure that electrically connects the first conductive structure to the second conductive structure.

Abstract: A semiconductor structure and a method for forming the same are provided. One form of a method includes: forming a source/drain groove in the channel structure on two sides of a gate structure; forming a sacrificial epitaxial layer on a bottom of the source/drain groove; forming, on the sacrificial epitaxial layer, a source/drain doped layer in the source/drain groove; and removing the sacrificial epitaxial layer, to form a gap between a bottom of the source/drain doped layer and the protrusion. After the sacrificial epitaxial layer is formed, the source/drain doped layer located in the source/drain groove may be formed on the sacrificial epitaxial layer using the epitaxy process on the basis of the sacrificial epitaxial layer. Therefore, the epitaxy process for forming the source/drain doped layer is prevented from adverse effects, the epitaxial growth quality of the source/drain doped layer is ensured, and a performance of the semiconductor structure is optimized.

Abstract: A display device, in which a plurality of pixel units respectively including a first pixel area, a second pixel area, a third pixel area, and a fourth pixel area are defined, includes a third light-emitting element corresponding to the third pixel area, and a fourth light-emitting element corresponding to the fourth pixel area, a first color filter portion overlapping the third pixel area, and a second color filter portion overlapping the fourth pixel area, where the first color filter portion of one pixel unit and the second color filter portion of another pixel unit adjacent to the one pixel unit are integrally formed with each other as a single unitary indivisible part to define a third color filter.

Abstract: A method of forming a semiconductor device includes the following steps. A substrate is patterned to form a fin structure. The fin structure is recessed to form a recess in the fin structure. An epitaxial source/drain region is grown from the recess. A first silicide layer is formed on the epitaxial source/drain region. A first portion of the first silicide layer is thinned, while leaving a second portion of the first silicide layer un-thinned. A metal contact is formed in contact with the thinned first portion of the first silicide layer.

Abstract: A display panel, a manufacturing method thereof, and a display device are provided. The display panel is divided into a bending area and a non-bending area, and includes a thin film transistor layer corresponding to the non-bending area, an organic filling layer corresponding to the bending area, and a pixel electrode. The pixel electrode in the bending area is connected to a source of the thin film transistor layer in the non-bending area through a metal trace, the organic filling layer includes a plurality of second via holes, and an organic photoresist is filled in the plurality of second via holes.

Abstract: Provided is a display device including a base layer, a pixel defining film, a display element layer including a light-emitting element divided by a pixel defining film, an encapsulation substrate on the display element layer, and a filling layer between the display element layer and the encapsulation substrate and including a filler derived from a mixture having a first polymer compound containing a first monomer represented by Formula 1 below, a second polymer compound containing a second monomer represented by Formula 2 below, and a plurality of crosslinking compounds.

Abstract: A display device includes: a substrate; an insulation layer that is positioned on the substrate and includes a plurality of openings; a plurality of emission layers that are positioned in the openings; and a plurality of spacers that are positioned on the insulation layer, wherein an area where the emission layers are positioned defines light emitting regions on a plane, at least one of the spacers has a shape of a circle, a regular polygon having five or more sides, or a regular polygon with at least one rounded corner and five or more sides, a planar area of at least one of the spacers is larger than a planar area of the smallest light emitting region, and the number of the spacers positioned in the predetermined region is at least 30% of the number of the light emitting regions arranged in the predetermined region.

Abstract: Provided is a display panel, including: a base substrate, including a display area and a peripheral area surrounding the display area; a plurality of pixel units, disposed in the display area; a barrier structure, disposed in the peripheral area; at least one first power line, disposed in the peripheral area; and, a row drive circuit, disposed in the peripheral area, wherein orthographic projections of any two of the following structures on the base substrate are at least partially overlapped with each other: the barrier structure, the at least one first power line, and the row drive circuit.

Abstract: A display device includes a first electrode, an outer electrode surrounding the first electrode, a bank overlapping the outer electrode in a plan view, the bank including an opening that exposes the first electrode, a light emitting element disposed on the first electrode and in the opening of the bank, and a second electrode disposed on the light emitting element. The outer electrode may be electrically disconnected from the first electrode upon a bad contact between a light emitting member and the outer electrode. As a result, defective pixels can be repaired.

Abstract: An apparatus for manufacturing a display device includes a chamber in which a display substrate is arranged, a lamp portion arranged outside or inside the chamber irradiating light, and a mask arranged inside the chamber to expose a portion of the display substrate and to shield another portion of the display substrate. The mast includes a hole through which the light irradiated from the lamp portion passes, and the lamp portion includes a flash lamp or a xenon lamp.

Abstract: Provided is an organic photodiode including a first electrode, a common electrode facing the first electrode, and a photoactive layer located between the first electrode and the common electrode, wherein the photoactive layer includes a donor layer and an acceptor layer, the donor layer includes a donor compound represented by Formula 110, the acceptor layer includes a first acceptor layer including a first acceptor compound and a second acceptor compound, each independently represented by Formula 120, and the first acceptor compound and the second acceptor compound are different from each other. Formulae 110 and 120 are each as described herein.

Abstract: A semiconductor storage device includes: a first stack having a first insulation film and a first conductive film alternately stacked in a first direction; a plurality of first column portions respectively including a first semiconductor portion extending in the first stack in the first direction and a charge trapping film provided on an outer circumferential surface of the first semiconductor portion; and a first isolation portion penetrating through an upper-layer portion of the first stack in the first direction, extending in a second direction that crosses the first direction, including a second insulation film and a third insulation film arranged via the second insulation film, and configured to electrically isolate the first conductive film included in the upper-layer portion of the first stack in a third direction that crosses the first and second directions.

Abstract: An integrated circuit is formed by a semiconductor part with a semiconductor substrate and an interconnection part including levels of metals. An electrostatic-discharge sensor includes a semiconductor structure in the semiconductor part and a network of metal antennas in the interconnection part. The electrostatic-discharge sensor has at least one pair of two nodes having one of a resistive link or a capacitive link or a PN-junction link in the semiconductor structure. The antennas of the network of antennas coupled to the nodes of the least one pair of two nodes exhibit an asymmetry in one or more of shape and size.

Abstract: This document discloses techniques, apparatuses, and systems for providing a semiconductor device assembly with a substrate for vertically assembled semiconductor dies. A semiconductor assembly is described that includes a semiconductor die coupled to a substrate such that an active surface of the semiconductor die is substantially orthogonal to a top surface of the substrate. The substrate includes a surface having a recessed slot at which a side surface of the semiconductor die couples. The semiconductor die includes a contact pad that couples to a contact pad at the recessed slot. In doing so, the techniques, apparatuses, and systems herein enable a robust and cost-efficient semiconductor device to be assembled.