Abstract: Provided is an array substrate. The array substrate includes: a substrate, and a first electrode, a connecting electrode, and at least two insulating layers arranged on the substrate, wherein the first electrode is disposed on a side, proximal to the first electrode, of the at least two insulating layers, and the connecting electrode is disposed on a side, facing away from the substrate, of the at least two insulating layers; and at least two communicated vias are arranged in the at least two insulating layers, a size of a first via, most proximal to the substrate, in the at least two vias is less than sizes of other vias, and the connecting electrode is lapped with the first electrode via the at least two vias.

Abstract: A method for manufacturing a 3D LED including the next formations of the axial portions, according to (z), a lower portion, an active region bearing on the lower portion, an upper portion bearing on the active region, the method further includes forming a radial portion, including a carrier blocking layer extending in contact with the base or with the top of the active region, and completely covering the walls of an axial portion, the radial formation being interposed between two consecutive axial formations.

Abstract: A first wafer having a first portion closer to a first surface and a thicker second portion connected with the first portion and closer to the second surface opposite to the first surface is provided. A second wafer is provided to bond with the first wafer. An edge trimming process is performed to form a trench penetrating through the second wafer and extending beyond the first portion and extending into the second portion. After bonding dies to the second wafer, a filling material is formed over the dies and the first and second wafers, wrapping around and between the dies, covering the first and second wafers, and partially filling the trench. A wafer thinning process is performed to remove the second portion and partially remove the filling material in the trench to level the surface of the thinned first wafer with the surface of the thinned filling material.

Abstract: A method includes forming a plurality of semiconductor sheets on a front-side of a semiconductive layer; forming a gate strip surrounding each of the semiconductor sheets; forming a plurality of source/drain structures on either side of each of the semiconductor sheets; doping the semiconductive layer with a dopant, the dopant has a same conductivity type as the source/drain structures; forming a power supply voltage line on a back-side of the doped semiconductive layer.

Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a first barrier layer including a first display area, a second display area including transmission areas, and a non-display area, a first base layer on a lower surface of the first barrier layer, and defining a first opening that overlaps the second display area, a second base layer on an upper surface of the first barrier layer, and defining second openings that respectively overlap the transmission areas, a second barrier layer on an upper surface of the second base layer and defining third openings that overlap the second openings, main pixel electrodes over the second barrier layer in the first display area, and auxiliary pixel electrodes over the second barrier layer in the second display area.

Abstract: A display apparatus includes: a substrate; a driving voltage line on the substrate and extending in a first direction; a first conductive layer on a same layer as the driving voltage line and spaced apart from the driving voltage line; a first insulating layer covering the driving voltage line and the first conductive layer; a driving transistor on the first insulating layer and comprising a driving gate electrode and a driving semiconductor layer overlapping the first conductive layer; and a connection member electrically connecting the driving voltage line and the driving semiconductor layer to each other, wherein an edge of the driving semiconductor layer is in contact with or inside an edge of the first conductive layer in a plan view.

Abstract: A method for manufacturing an insulated gate bipolar transistor includes (a) providing a substrate comprising a front side and a back side; (b) forming at least one front side element and at least one front side metal layer on the front side of the substrate; (c) performing a thinning process on the back side of the substrate; (d) performing a laser pre-treatment process on the back side of the substrate; (e) performing at least one ion doping process on the back side of the substrate for forming at least one ion doping layer; (f) performing an annealing process on the back side of the substrate; and (g) forming a collector metal layer on the back side of the substrate.

Abstract: A semiconductor device includes a substrate with a working surface and a transistor formed in the substrate. The transistor includes a complex channel structure which is vertically arranged with respect to the working surface. The complex channel structure includes first and second source-drain (S-D) ends which are provided in a plane extending along the working surface to define an opening to a bounded region of the complex channel structure. The transistor also includes a gate dielectric layer formed on the complex channel structure within the bounded region, and a gate metal layer formed on the gate dielectric layer within the bounded region to form the transistor.

Abstract: A light-emitting element comprises a substrate, a plurality of light shielding layers, a capping layer, a conductive layer and a plurality of protrusions. The plurality of light shielding layers is under the substrate. The capping layer contacts a first surface of the substrate and covers the plurality of light shielding layers. The conductive layer contacts a second surface of the substrate. The plurality of protrusions is arranged on the second surface of the substrate and covers a part of the conductive layer, and an organic light-emitting unit comprising an organic material is disposed between two adjacent protrusions of the plurality of protrusions. One of the plurality of protrusions has an edge, which is offset from an edge of one of the plurality of light shielding layers in the longitudinal direction from each other.

Abstract: A display panel and a display apparatus are provided. A first base plate includes a first substrate, a transistor array layer, a pixel electrode layer, a common electrode layer, a first inorganic insulating layer, and a second inorganic insulating layer. The transistor array layer is provided on a side of the first substrate. The pixel electrode layer and the common electrode layer are arranged on a side of the transistor array layer away from the first substrate. The transistor array layer includes a transistor, the pixel electrode layer includes a pixel electrode, and the common electrode layer includes common electrodes. An insulating layer between the transistor array layer and one of the pixel electrode layer and the common electrode layer close to the transistor array layer is the first inorganic insulating layer. The second inorganic insulating layer is provided between the pixel electrode layer and the common electrode layer.

Abstract: A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200° C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15° C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600° C. and not more than 950° C., and a process of cooling the stacked body from the bonding temperature to 200° C. at an average temperature lowering rate of the stacked body of not less than 15° C./min. A ceramic substrate is favorably a silicon nitride substrate.

Abstract: Glass layers having partially embedded conductive layers for power delivery in semiconductor packages and related methods are disclosed. An example semiconductor package includes a core layer having a thickness between a first surface opposite a second surface. The core layer includes a trench provided in the first surface. The trench partially extending between the first surface and the second surface. An electrically conductive material is positioned in the trench. A trace is provided on the conductive material. The trace is offset in a direction away from the first surface and away from the second surface of the core layer.

Abstract: Embodiments provide a quantum dot complex that includes a quantum dot, and ligands bonded to a surface of the quantum dot, wherein the ligands include a first ligand including a first acid functional group, a second ligand including a second acid functional group and different from the first acid functional group, and a third ligand including a thiol group, wherein a sum of the first ligand and the second ligand contained in the ligands is in a range of 40% by weight to 45% by weight, based on a total weight of the ligands, and a content of the third ligand in the ligands is in a range of 15% by weight to 20% by weight, based on the total weight of the ligands.

Abstract: The semiconductor device configures a cascode-type high voltage element comprising a plurality of low voltage elements connected in series, wherein the number of stages of connected low voltage elements is reduced, and the high voltage element has desired withstand voltage, without limiting the withstand voltage of the gate oxide film of the low voltage elements. The semiconductor device comprises a first semiconductor element and one or more second semiconductor elements connected in series, wherein the first and the second semiconductor elements have a control signal output terminal between a source terminal and a drain terminal or between an emitter terminal and a collector terminal; and a gate terminal of the one or more second semiconductor elements is connected to the control signal output terminal of the first or second semiconductor element connected in series adjacently to the source or emitter side of said one or more second semiconductor elements.

Abstract: A display device is provided. The display device includes a substrate including a display area and a pad area, which is disposed on one side of the display area, a plurality of conductive layers disposed on the substrate, in the display area and the pad area, a passivation layer disposed on the conductive layers, and a plurality of light-emitting elements disposed on the passivation layer, in the display area, and spaced apart from one another, wherein at least one of the conductive layers includes a first metal layer, a second metal layer, which is disposed on the first metal layer, and a third metal layer, which is disposed on the second metal layer, the first metal layer includes vanadium (V), the second metal layer includes aluminum (Al) or an Al alloy, and the third metal layer includes V or titanium (Ti).

Abstract: In an embodiment a method for producing an optoelectronic component includes providing a semiconductor layer sequence, applying a matrix material comprising ferromagnetic particles, wherein the matrix material is heatable by inductive heating of the ferromagnetic particles, inductively heating the ferromagnetic particles thereby at least partly softening the matrix material and curing the matrix material, wherein the matrix material forms at least part of a carrier.

Abstract: A metal chalcogenide material layer of lower quality provides a transition between a metal chalcogenide material layer of higher quality and a gate insulator material that separates the metal chalcogenide material layers from a gate electrode of a metal-oxide semiconductor field effect transistor (MOSFET) structure. Gate insulator material may be more readily initiated and/or or precisely controlled to a particular thickness when formed on lower quality metal chalcogenide material. Accordingly, such a material stack may be integrated into a variety of transistor structures, including multi-gate, multi-channel nanowire or nanosheet transistor structures.

Abstract: Provides is a manufacturing method of a display device including steps of forming a semiconductor on a substrate; applying a doping solution to the semiconductor layer; and doping by heat treating the semiconductor layer to which the doping solution is applied, wherein the doping solution includes a solvent and a dopant, and the dopant contains at least one of triethyl borate, tris(trimethylsilyl)borate, and trimethylboroxine.

Abstract: According to one embodiment, a display device includes a substrate, a lower electrode in a display area, a rib including an aperture, a partition on the rib, a thin film including an upper electrode and an organic layer, a first sealing layer covering the thin film and the partition, a second sealing layer on the first sealing layer, and a dam structure including protrusions provided in a surrounding area between an end portion of the substrate and the display area. An end portion of the thin film is located between the dam structure and the display area. The second sealing layer covers the end portion of the thin film and covers at least part of the dam structure.

Abstract: A display device includes: a substrate; a display unit on the substrate; and an encapsulation member on the display unit, wherein the substrate comprises: a first inclined surface inclined with respect to a first surface of the substrate; and a first side surface connected to the first inclined surface and arranged at a predetermined angle from the first inclined surface, wherein a surface roughness of the first side surface is different from a surface roughness of the first inclined surface.