Abstract: A display device includes: a substrate; a display unit on the substrate; and an encapsulation member on the display unit, wherein the substrate comprises: a first inclined surface inclined with respect to a first surface of the substrate; and a first side surface connected to the first inclined surface and arranged at a predetermined angle from the first inclined surface, wherein a surface roughness of the first side surface is different from a surface roughness of the first inclined surface.

Abstract: Provided is a display device including a substrate including a display area and a contact area located in a display area, a power line disposed in a display area on a substrate and overlapping a contact area, a passivation layer disposed on a substrate and a power line, and an opening exposing at least a portion of an upper surface of a power line in a contact area defined in a passivation layer, a via insulation layer disposed on a passivation layer, including a via contact hole connected to an opening in a contact area, and including a protrusion protruding toward a center of a via contact hole, and a common electrode disposed on a via insulation layer and a power line and electrically connected to a power line in a contact area.

Abstract: Disclosed is a display device including a base substrate, a circuit layer disposed on the base substrate, a first electrode disposed on the circuit layer, an auxiliary electrode disposed on the circuit layer and spaced apart from the first electrode, a pixel defining layer disposed on the circuit layer and the first electrode, and having an opening which exposes the first electrode, a light-emitting layer disposed in the opening, and a second electrode disposed on the light-emitting layer, wherein the auxiliary electrode includes a first layer including the same material as a material of the first electrode, a second layer disposed on the first layer and including silver (Ag) or silver alloy (Ag alloy), and a third layer disposed on the second layer and including molybdenum (Mo) or molybdenum alloy (Mo alloy), and wherein the second electrode may be in contact with a side face of the second layer.

Abstract: A light-emitting device with high heat resistance in a manufacturing process is to be provided.

Abstract: A semiconductor device may include a word line that extends in a first direction, a bit line that extends in a second direction that intersects the first direction, a variable resistance pattern that is disposed between the word line and the bit line and that has a first width in the first direction and a second width in the second direction, wherein the first width and the second width are different from each other, and an electrode pattern that is disposed between the variable resistance pattern and the bit line and that has a third width in the first direction and a fourth width in the second direction, wherein the third width and the fourth width are different from each other.

Abstract: Disclosed are a quantum dot light-emitting device and a manufacturing method therefor, and a display apparatus, including: coating a substrate with a quantum dot solution, wherein each quantum dot includes a quantum dot body and a first crosslinkable ligand connected to the surface of the quantum dot body, and when the quantum dots are in a solution state, the first crosslinkable ligand is in a decrosslinking state; carrying out cross-linking reaction on the first crosslinkable ligand of the quantum dots at a first temperature; using laser to irradiate a quantum dot region to be removed after the crosslinking reaction, the quantum dots in said region being decrosslinked at a second temperature generated by laser irradiation, and a difference between the second temperature and the first temperature being greater than a preset value; and removing the quantum dots in said region to form a patterned quantum dot layer.

Abstract: A light-emitting substrate includes a base substrate, a light-emitting unit and a light extraction member arranged in sequence. The light-emitting unit includes at least one blue light-emitting device, a first light enhancement layer and a second light enhancement layer arranged in sequence. A blue light-emitting device includes a first electrode, at least one blue light-emitting layer and a second electrode sequentially stacked. An orthographic projection of the light extraction member on the base substrate at least partially overlaps with an orthographic projection of the blue light-emitting device on the base substrate. An absolute value of a difference between a wavelength corresponding to a transmittance peak of the light extraction member and a wavelength corresponding to an emission spectrum peak of the blue light-emitting device is less than or equal to 10 nm.

Abstract: A display device includes: a display panel including a hole area, a first area adjacent to the hole area, and a second area other than the hole area and the first area; a first cover layer under the display panel, defining a first opening in the hole area, and overlapping the first area and the second area; and a second cover layer under the first cover layer, defining a second opening in the hole area, overlapping the first area and the second area, and including a groove defined along a boundary between the first area and the second area.

Abstract: A method of manufacturing a display device includes providing an encapsulation layer on a display panel, providing an uncured resin layer on the encapsulation layer and forming a protective layer by curing the uncured resin layer in a nitrogen atmosphere having an oxygen concentration in a range of about 300 ppm to about 10000 ppm.

Abstract: Embodiments provide a light emitting element that includes a first electrode, a second electrode disposed on the first electrode, a light emitting layer disposed between the first electrode and the second electrode and including a quantum dot, a hole transport region disposed between the first electrode and the light emitting layer, and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the electron transport layer includes an electron transport material, and the electron transport material includes a metal oxide particle, and a bicarbonate coupled to a surface of the metal oxide particle.

Abstract: The display device includes a substrate including a display area and a non-display area; a plurality of sub-pixels disposed on the substrate and in the display area; a light-emitting layer included in each of the plurality of sub-pixels; an encapsulation layer covering the light-emitting layer; a touch electrode and a buffer layer disposed on the encapsulation layer; and a color filter and a black matrix disposed on the buffer layer, wherein the black matrix includes a first layer, a second layer, and a third layer, wherein the color filter partially overlaps the first layer.

Abstract: A display device includes: a base layer; a circuit layer on the base layer; and an element layer on the circuit layer and including a plurality of light emitting elements and a photo-sensing element, wherein the plurality of light emitting elements include: a first emission layer configured to emit a first color light; a second emission layer configured to emit a second color light different from the first color light; and a third emission layer configured to emit a third color light different from the first color light and the second color light, and the photo-sensing element includes a photoelectric conversion layer overlapping at least any one of a part of the first emission layer, a part of the second emission layer, or a part of the third emission layer.

Abstract: Provided is a method of fabricating a semiconductor device including forming a device isolation layer defining active regions on a substrate and forming gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming a trench crossing the active regions in the substrate, forming a conductive layer filling the trench, and performing a heat treatment process on the conductive layer. The conductive layer includes a nitride of a first metal. Nitrogen atoms in the conductive layer are diffused toward an outer surface and a lower surface of the conductive layer by the heat treatment process.

Abstract: A display device includes: a substrate; a thin-film transistor disposed on the substrate and including a semiconductor layer; an interlayer insulating layer disposed on the thin-film transistor; a data conductive layer disposed on the interlayer insulating layer and including an auxiliary electrode and a transistor electrode connected to the semiconductor layer of the thin-film transistor, a via layer disposed on the data conductive layer; a pixel electrode layer disposed on the via layer and including: a pixel electrode and a dummy pixel electrode separated from the pixel electrode; an intermediate layer disposed on the pixel electrode layer; and a common electrode disposed on the intermediate layer. The auxiliary electrode includes a main conductive layer and an upper sub-conductive layer. Side surfaces of the main conductive layer of the auxiliary electrode are disposed inner than side surfaces of the upper sub-conductive layer of the auxiliary electrode.

Abstract: A semiconductor device includes: an electroconductive support including leads; a first semiconductor element supported by the support; a second semiconductor element supported by the support; a third semiconductor element supported by the support, electrically connected to the first and the second semiconductor elements, and insulating the first and the second semiconductor elements from each other; and a sealing resin covering the first, the second and the third semiconductor elements and a part of the support. The support includes: a first part overlapping with the first semiconductor element as viewed in a thickness direction of the leads; a second part overlapping with the second semiconductor element as viewed in the thickness direction; and a third part overlapping with the third semiconductor element as viewed in the thickness direction. The third part is made of a non-magnetic material having a relative permeability of less than 100.

Abstract: A display device includes a first base layer defining a display area in which pixels are arranged, a second base layer at least partially under the first base layer, a first connection signal line partially on the first base layer, and a second connection signal line partially under the second base layer. The first connection signal line includes a (1-1)st part overlapping the first base layer in a plan view and a (1-2)st part that does not overlap the first base layer in the plan view. The second connection signal line includes a (2-1)st part overlapping the second base layer in the plan view and a (2-2)st part that does not overlap the second base layer in the plan view. At least a portion of the (2-2)st part overlaps the (1-2)st part in the plan view, and the (1-2)st part and the (2-2)st part are electrically connected.

Abstract: A method of manufacturing an optoelectronic device including light-emitting diodes comprising forming three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, with a polarity of the group-III element, the method further including, for each semiconductor element, forming an active area covering the semiconductor element and a stack of semiconductor layers covering the active area, the active area being formed by vapor deposition at low pressure and comprising quantum wells separated by barrier layers, each quantum well including a ternary alloy having at least one first group-III element, the group-V element, and a second group-III element, the ratio of the atomic flux of the group-III elements to the atomic flux of the group-V element is in the range from 1 to 1.8.

Abstract: A display device includes pixels each including an emission area and a non-emission area. Each pixel includes: a driving voltage line; a via layer disposed on the driving voltage line and including a first via hole exposing a first side of the driving voltage line, and a second via hole; a first electrode disposed on the via layer; a pixel defining layer disposed on the first electrode and the via layer and including a first opening formed in the emission area to expose a portion of the first electrode, and a second opening disposed in the non-emission area; an emission layer disposed in the first opening; and a second electrode disposed on the emission layer and the pixel defining layer. The second opening and the first via hole partially overlap each other. The via layer covers a second side of the driving voltage line.

Abstract: Disclosed is a unit pixel of a microdisplay having a concave reflector with a center aperture. The light extractor has a protrusion and a bulk portion formed using the same epitaxial growth process. The concave reflector with a center aperture is formed on the protrusion, and epitaxial growth of the light-emitting body is made through the aperture concave reflector. In addition, the light rays reflected by the concave reflector with a center aperture has exit angles that are nearly perpendicular to the exit surface and are thus easily emitted to the outside.

Abstract: Provided is an organic light emitting display device in which a driving thin film transistor (TFT) includes an oxide semiconductor pattern. The driving thin film transistor includes a gate electrode disposed under an oxide semiconductor pattern, and a dummy electrode, a source electrode and a drain electrode over the oxide semiconductor pattern, and the dummy electrode is electrically connected to the source electrode to increase the S-factor of the driving TFT. In addition, the organic light emitting display device of the present disclosure includes a plurality of switching TFTs including an oxide semiconductor pattern, and the plurality of switching TFTs includes a plurality of switching thin film transistors having different distances between the oxide semiconductor pattern and the gate electrode so as to have different threshold voltages.