Abstract: Embodiments provide a light emitting element that includes a first electrode, a second electrode disposed on the first electrode, a light emitting layer disposed between the first electrode and the second electrode and including a quantum dot, a hole transport region disposed between the first electrode and the light emitting layer, and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the electron transport layer includes an electron transport material, and the electron transport material includes a metal oxide particle, and a bicarbonate coupled to a surface of the metal oxide particle.

Abstract: The display device includes a substrate including a display area and a non-display area; a plurality of sub-pixels disposed on the substrate and in the display area; a light-emitting layer included in each of the plurality of sub-pixels; an encapsulation layer covering the light-emitting layer; a touch electrode and a buffer layer disposed on the encapsulation layer; and a color filter and a black matrix disposed on the buffer layer, wherein the black matrix includes a first layer, a second layer, and a third layer, wherein the color filter partially overlaps the first layer.

Abstract: A display device includes: a base layer; a circuit layer on the base layer; and an element layer on the circuit layer and including a plurality of light emitting elements and a photo-sensing element, wherein the plurality of light emitting elements include: a first emission layer configured to emit a first color light; a second emission layer configured to emit a second color light different from the first color light; and a third emission layer configured to emit a third color light different from the first color light and the second color light, and the photo-sensing element includes a photoelectric conversion layer overlapping at least any one of a part of the first emission layer, a part of the second emission layer, or a part of the third emission layer.

Abstract: Provided is a method of fabricating a semiconductor device including forming a device isolation layer defining active regions on a substrate and forming gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming a trench crossing the active regions in the substrate, forming a conductive layer filling the trench, and performing a heat treatment process on the conductive layer. The conductive layer includes a nitride of a first metal. Nitrogen atoms in the conductive layer are diffused toward an outer surface and a lower surface of the conductive layer by the heat treatment process.

Abstract: A display device includes: a substrate; a thin-film transistor disposed on the substrate and including a semiconductor layer; an interlayer insulating layer disposed on the thin-film transistor; a data conductive layer disposed on the interlayer insulating layer and including an auxiliary electrode and a transistor electrode connected to the semiconductor layer of the thin-film transistor, a via layer disposed on the data conductive layer; a pixel electrode layer disposed on the via layer and including: a pixel electrode and a dummy pixel electrode separated from the pixel electrode; an intermediate layer disposed on the pixel electrode layer; and a common electrode disposed on the intermediate layer. The auxiliary electrode includes a main conductive layer and an upper sub-conductive layer. Side surfaces of the main conductive layer of the auxiliary electrode are disposed inner than side surfaces of the upper sub-conductive layer of the auxiliary electrode.

Abstract: A semiconductor device includes: an electroconductive support including leads; a first semiconductor element supported by the support; a second semiconductor element supported by the support; a third semiconductor element supported by the support, electrically connected to the first and the second semiconductor elements, and insulating the first and the second semiconductor elements from each other; and a sealing resin covering the first, the second and the third semiconductor elements and a part of the support. The support includes: a first part overlapping with the first semiconductor element as viewed in a thickness direction of the leads; a second part overlapping with the second semiconductor element as viewed in the thickness direction; and a third part overlapping with the third semiconductor element as viewed in the thickness direction. The third part is made of a non-magnetic material having a relative permeability of less than 100.

Abstract: A display device includes a first base layer defining a display area in which pixels are arranged, a second base layer at least partially under the first base layer, a first connection signal line partially on the first base layer, and a second connection signal line partially under the second base layer. The first connection signal line includes a (1-1)st part overlapping the first base layer in a plan view and a (1-2)st part that does not overlap the first base layer in the plan view. The second connection signal line includes a (2-1)st part overlapping the second base layer in the plan view and a (2-2)st part that does not overlap the second base layer in the plan view. At least a portion of the (2-2)st part overlaps the (1-2)st part in the plan view, and the (1-2)st part and the (2-2)st part are electrically connected.

Abstract: A method of manufacturing an optoelectronic device including light-emitting diodes comprising forming three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, with a polarity of the group-III element, the method further including, for each semiconductor element, forming an active area covering the semiconductor element and a stack of semiconductor layers covering the active area, the active area being formed by vapor deposition at low pressure and comprising quantum wells separated by barrier layers, each quantum well including a ternary alloy having at least one first group-III element, the group-V element, and a second group-III element, the ratio of the atomic flux of the group-III elements to the atomic flux of the group-V element is in the range from 1 to 1.8.

Abstract: A display device includes pixels each including an emission area and a non-emission area. Each pixel includes: a driving voltage line; a via layer disposed on the driving voltage line and including a first via hole exposing a first side of the driving voltage line, and a second via hole; a first electrode disposed on the via layer; a pixel defining layer disposed on the first electrode and the via layer and including a first opening formed in the emission area to expose a portion of the first electrode, and a second opening disposed in the non-emission area; an emission layer disposed in the first opening; and a second electrode disposed on the emission layer and the pixel defining layer. The second opening and the first via hole partially overlap each other. The via layer covers a second side of the driving voltage line.

Abstract: Disclosed is a unit pixel of a microdisplay having a concave reflector with a center aperture. The light extractor has a protrusion and a bulk portion formed using the same epitaxial growth process. The concave reflector with a center aperture is formed on the protrusion, and epitaxial growth of the light-emitting body is made through the aperture concave reflector. In addition, the light rays reflected by the concave reflector with a center aperture has exit angles that are nearly perpendicular to the exit surface and are thus easily emitted to the outside.

Abstract: Provided is an organic light emitting display device in which a driving thin film transistor (TFT) includes an oxide semiconductor pattern. The driving thin film transistor includes a gate electrode disposed under an oxide semiconductor pattern, and a dummy electrode, a source electrode and a drain electrode over the oxide semiconductor pattern, and the dummy electrode is electrically connected to the source electrode to increase the S-factor of the driving TFT. In addition, the organic light emitting display device of the present disclosure includes a plurality of switching TFTs including an oxide semiconductor pattern, and the plurality of switching TFTs includes a plurality of switching thin film transistors having different distances between the oxide semiconductor pattern and the gate electrode so as to have different threshold voltages.

Abstract: A display panel including a substrate including signal lines, and a light-emitting element group located at a side of the substrate and electrically connected to the signal lines. The light-emitting element group includes light-emitting chips, each including a light-emitting element and a driver circuit that are stacked. The driver circuit is used to drive the light-emitting element to emit light. The light-emitting chips include at least a first light-emitting chip located at the side of the substrate and a second light-emitting chip located at a side of the first light-emitting chip adjacent to the substrate. An orthographic projection area of the second light-emitting chip is smaller than that of the first light-emitting chip in a first direction, and the first direction is perpendicular to a plane of the substrate.

Abstract: A display apparatus includes: a substrate including a plurality of sub-pixels; an organic light emitting element formed in each of the plurality of sub-pixels; a light control member including a light control pattern disposed in each of the plurality of sub-pixels, and an air layer between adjacent light control patterns; and a color filter layer disposed on the light control member.

Abstract: Provided is a display device including a substrate including a display area and a contact area located in a display area, a power line disposed in a display area on a substrate and overlapping a contact area, a passivation layer disposed on a substrate and a power line, and an opening exposing at least a portion of an upper surface of a power line in a contact area defined in a passivation layer, a via insulation layer disposed on a passivation layer, including a via contact hole connected to an opening in a contact area, and including a protrusion protruding toward a center of a via contact hole, and a common electrode disposed on a via insulation layer and a power line and electrically connected to a power line in a contact area.

Abstract: A light-emitting device includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and a hole transport layer disposed between the first electrode and the light-emitting layer, wherein the light-emitting layer includes a first quantum dot including a first core with an emission peak in a visible light region, and a second quantum dot including a second core with an emission peak in a near-ultraviolet region or an ultraviolet region.

Abstract: A memory structure includes a substrate. The memory structure further includes a first transistor, wherein the first transistor is a first distance from the substrate. The memory structure further includes a second transistor, wherein the second transistor is a second distance from the substrate, and the first distance is different from the second distance, and a first source/drain (S/D) region of the first transistor is connected to a second S/D region of the second transistor. The memory structure further includes a plurality of storage elements electrically connected to both the first transistor and the second transistor, wherein each of the plurality of storage elements is a third distance from the substrate, and the third distance is different from both the first distance and the second distance.

Abstract: A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.

Abstract: A memory device includes a first alternating stack including first insulating layers and first electrically conductive layers that are interlaced along a vertical direction, where a first stepped cavity located inside the first alternating stack includes a first stepped bottom surface containing horizontally-extending surface segments of the first electrically conductive layers, a memory opening vertically extending through each layer within the first alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements, a first insulating spacer contacting sidewalls of the first stepped cavity, and a first electrically conductive strip including a first horizontally-extending bottom strip segment contacting one of the first electrically conductive layers, a first horizontally-extending top strip segment that overlies a topmost layer within the first alternating stack, and a first vertically-extending strip segment connecting the first horizontally-

Abstract: Disclosed is a semiconductor fabrication method comprising forming a first conductive structure and a second conductive structure, measuring a misalignment value between the first conductive structure and the second conductive structure, based on the measured misalignment value selecting a reticle from a set of reticles, and using the selected reticle to form a connection conductive structure that electrically connects the first conductive structure to the second conductive structure.

Abstract: A semiconductor structure and a method for forming the same are provided. One form of a method includes: forming a source/drain groove in the channel structure on two sides of a gate structure; forming a sacrificial epitaxial layer on a bottom of the source/drain groove; forming, on the sacrificial epitaxial layer, a source/drain doped layer in the source/drain groove; and removing the sacrificial epitaxial layer, to form a gap between a bottom of the source/drain doped layer and the protrusion. After the sacrificial epitaxial layer is formed, the source/drain doped layer located in the source/drain groove may be formed on the sacrificial epitaxial layer using the epitaxy process on the basis of the sacrificial epitaxial layer. Therefore, the epitaxy process for forming the source/drain doped layer is prevented from adverse effects, the epitaxial growth quality of the source/drain doped layer is ensured, and a performance of the semiconductor structure is optimized.