Abstract: An ion detector according to this embodiment has a structure for reducing influences of signal reflection or the like on an output signal. The ion detector comprises an electron multiplier, a signal output unit, a signal output terminal, and an AC coupler. The AC coupler is disposed on a signal line between the signal output unit and the signal output terminal, including a resin sheet and a pair of conductive sections facing each other with the resin sheet interposed therebetween. One conductive section is electrically connected to an output terminal of the signal output unit, and the other conductive section is electrically connected to the signal output terminal.

Abstract: The invention relates to a device and method for determining a property of a sample that is to be used in a charged particle microscope. The sample comprises a specimen embedded within a matrix layer. The device comprises a light source arranged for directing a beam of light towards said sample, and a detector arranged for detecting light emitted from said sample in response to said beam of light being incident on said sample. Finally, the device comprises a controller that is connected to said detector and arranged for determining a property of said matrix layer based on signals received by said detector.

Abstract: Provided is a time-of-flight mass spectrometer including: a loop-orbit defining electrode (21) including an outer electrode (211) and inner electrode (212) located on the outside and inside of a loop orbit, respectively; an ion inlet (22); an ion outlet (23) provided in either the outer or inner electrode; a loop-flight voltage applier (28) configured to apply loop-flight voltages to the outer and inner electrodes, respectively; a set of deflecting electrodes (24) facing each other across a section of an n-th loop orbit, where n is a predetermined number, the deflecting electrodes including a first portion (241) which faces the n-th loop orbit and a second portion (242) which includes other portions; and a voltage applier (29) configured to apply deflecting voltages to the first portion so as to reverse the drifting direction of the ions flying in the n-th loop orbit, and a voltage to the second portion so as to create the loop-flight electric field.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Abstract: A multi-pass time-of-flight mass spectrometer is disclosed having an elongated orthogonal accelerator (30). The orthogonal accelerator (30) has electrodes (31) that are transparent to the ions so that ions that are reflected or turned back towards it are able to pass through the orthogonal accelerator (30). The electrodes (31) of the orthogonal accelerator (30) may be pulsed from ground potential in order to avoid the reflected or turned ion packets being defocused. The spectrometer has a high duty cycle and/or space charge capacity of pulsed conversion.

Abstract: An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

Abstract: An apparatus for analysing ions, including a first mass analyser configured to eject groups of ions in a predetermined sequence during different time windows; an ion transport device having a plurality of electrodes arranged around a transport channel; control means configured to control voltages applied to the electrodes to generate a transport potential in a transport channel, the transport potential having a plurality of potential wells configured to move along the transport channel such that each group of ions received by the ion transport device is respectively transported along the transport channel by one or more selected potential; fragmentation means configured to fragment precursor ions in each group of ions so as to produce product ions; and a second mass analyser configured to produce a respective mass spectrum using each group of ions after the group of ions has been fragmented and transported.

Abstract: In order to suppress a charge-up in an ion source configured to ionize a component contained in a sample gas, a mass spectrometer according to the present invention is provided with an ion source (3) including: an ionization chamber (30) having an ion ejection opening (301) and internally having a space substantially separated from an outside area; a repeller electrode (31), located within the ionization chamber, for creating an expelling electric field which acts on an ion generated within the ionization chamber to expel the ion through the ion ejection opening to the outside area; and a voltage generator (7) configured to selectively apply, to the repeller electrode, a first voltage for creating the expelling electric field and a second voltage for creating a charge-up-removing electric field, where the second voltage is a positive voltage having a larger absolute value than the first voltage.

Abstract: A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

Abstract: Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

Abstract: An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

Abstract: A method for controlling operation of an electron emission source includes acquiring, while varying an emission current of an electron beam, a characteristic between a surface current of a target object at a position on the surface of the target object irradiated with the electron beam, and the emission current, calculating, based on the characteristic, first gradient values each obtained by dividing the surface current of the target object by the emission current, in a predetermined range of the emission current in the characteristic, calculating a second gradient value by dividing a surface current of the target object by an emission current in a state where the electron beam has been adjusted, and adjusting a cathode temperature to make the second gradient value in the state where the electron beam has been adjusted be in the range of the first gradient values in the predetermined range of the emission current.

Abstract: A method of processing ions in a mass spectrometer comprises introducing one or more precursor ions into a collision cell to fragment at least a portion of said ions, where the collision cell is configured to confine ions having m/z ratios above a selected threshold (i.e., high m/z ions). The ions are released from the collision cell and introduced into a downstream analyzer ion trap to radially confine high m/z ions. The collision cell and the analyzer ion trap are configured to confine ions having m/z ratios below said selected threshold (i.e., low m/z ions). Ions are introduced into the collision cell and undergo fragmentation. The fragment ions are released from the collision cell and introduced into the analyzer ion trap, thus loading the analyzer ion trap with both high m/z and low m/z ions. The ions are released from the analyzer ion trap and detected by a detector.

Abstract: An electrostatic beam transfer lens for a multi-beam apparatus that includes a series of multiple, successive electrodes, such that an aperture bore of each electrode is aligned along an electron gun axis and is configured to allow multiple beams to pass therethrough. The first electrode in the series is a cylindrical electrode configured to receive the multiple beams at an entrance plane. The first electrode has a bore length and a bore diameter such that a ratio of bore diameter/bore length<0.3. The shape of the first electrode defines the electrostatic field penetration to the entrance plane of the first electrode to prevent lens focusing fields of the electrostatic beam transfer lens from extending through the first electrode and beyond the entrance plane, thus providing a uniform, flat electric field at the entrance area of the electrostatic transfer lens.

Abstract: Disclosed among other aspects is a power supply such as may be used in a charged particle inspection system. The power supply includes a direct current source such as a programmable linear current source connected to a controlled voltage source where the control signal for the controlled voltage source is derived from a measured voltage drop across the direct current source.

Abstract: A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 ?m or more using larger tilt angles.

Abstract: A vacuum connection mechanism includes: a main body part having a first opening and a first sub opening opened symmetrically in a first direction, and a second opening and a second sub opening opened symmetrically in a second direction; a first bellows connected to the first opening and to the end of which a first flange is provided; a first sub bellows connected to the first sub opening and to the end of which a first blind flange is provided; a first supporting member coupling the first flange and the first blind flange; a second bellows connected to the second opening and to the end of which a second flange is provided; a second sub bellows connected to the second sub opening and to the end of which a second blind flange is provided; and a second supporting member coupling the second flange and the second blind flange.

Abstract: A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

Abstract: Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

Abstract: To compensate for hysteresis in an actuator, a path between a first position and a second position can be selected, and a drive signal can be applied to an actuator element that includes a hysteresis-compensated portion to move an object along the selected path.