Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: A coherent extreme ultraviolet (XUV) radiation source is provided that includes a non-linear optical conversion material solid substrate disposed for nonlinear conversion of infrared (IR) coherent radiation into XUV coherent radiation, where the solid substrate includes an IR coherent radiation region, and an XUV coherent radiation waveguide region, where the IR coherent radiation region is optically coupled to the XUV coherent radiation waveguide region, where the XUV coherent radiation converted from the IR coherent radiation by the non-linear optical conversion material propagates in and outputs from the XUV coherent radiation waveguide region.

Abstract: A method and apparatus for active voltage regulation in optical modules utilize a voltage regulator to change the supply voltage provided to laser diode driver and receiver electronics to optimize module performance over temperature. The ambient temperature of the module is monitored. The outputs of the voltage regulator are controlled to provide voltages that are optimized with respect to temperature for the integrated circuits in the optical module. This control is implemented via a temperature sensitive feedback or a control input from a microcontroller with a temperature monitor input. The supply voltage is optimized to minimize the voltage required to achieve acceptable performance at a given temperature. Minimizing the supply voltage lengthens the lifetime of the integrated circuit and the optical module. The voltage regulator provides higher than standard supply voltages to a laser diode driver to compensate for higher laser voltage at low temperatures.

Abstract: A light emitting device is provide comprising a light emitting diode (LED) chip having a first main surface and a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface. A plurality of electrodes is disposed on the first main surface. A wavelength conversion film is disposed on the second main surface. A mark is formed in the wavelength conversion film. The mark contains orientation information of the light emitting device, thereby enabling the light emitting device to be properly oriented on a receiving substrate.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

Abstract: A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.

Abstract: Embodiments for driving a laser diode includes generating a bias current having a duty cycle that is less than 100%. The current level of the bias current is insufficient to turn on the laser diode. A drive current is generated and combined with the bias current to turn on the laser diode almost instantly.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: An optical assembly that installs red, green, blue laser diodes (LDs) within a single package is disclosed. The LDs are mounted on a base via respective sub-mounts. Light emitted from the LDs is collimated by collimating lenses and multiplexed by two wavelength filters so as to align optical axes of the light. The multiplexed light has an axis substantially leveled with the axes of the red, green, and blue light measured from the top of the base.

Abstract: There is provided a pulse shaping device including a pulse generator configured to generate pulsed light by using a semiconductor laser for emitting light of a predetermined wavelength, and an optical member provided in a subsequent stage of the pulse generator and configured to compress a pulse time width of the pulsed light. The pulsed light has a first frequency dispersion state. The optical member imparts a second frequency dispersion state to the pulsed light, the second frequency dispersion state being a frequency dispersion state opposite to the first frequency dispersion state.

Abstract: A wavelength tunable laser includes a gain section, a grating section, and an isolation section. The gain section generates and modulates an optical signal. The grating section is positioned adjacent to the gain section, and the isolation section is disposed between the gain section and the grating section. The isolation section impedes conduction of an electrical current between the gain section and the grating section.

Abstract: A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0?x2?about 0.02 and about 0.03?y2?about 0.07.

Abstract: A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.

Abstract: A method and apparatus for active voltage regulation in optical modules utilize a voltage regulator to change the supply voltage provided to laser diode driver and receiver electronics to optimize module performance over temperature. The ambient temperature of the module is monitored. The outputs of the voltage regulator are controlled to provide voltages that are optimized with respect to temperature for the integrated circuits in the optical module. This control is implemented via a temperature sensitive feedback or a control input from a microcontroller with a temperature monitor input. The supply voltage is optimized to minimize the voltage required to achieve acceptable performance at a given temperature. Minimizing the supply voltage lengthens the lifetime of the integrated circuit and the optical module. The voltage regulator provides higher than standard supply voltages to a laser diode driver to compensate for higher laser voltage at low temperatures.

Abstract: A multi-wavelength distributed Bragg reflector (DBR) semiconductor laser is provided where DBR heating elements are positioned over the waveguide in the DBR section and define an interleaved temperature profile that generates multiple distinct reflection peaks corresponding to distinct temperature dependent Bragg wavelengths associated with the temperature profile. Neighboring pairs of heating elements of the DBR heating elements positioned over the waveguide in the DBR section are spaced along the direction of the axis of optical propagation by a distance that is equal to or greater than the laser chip thickness b to minimize the impact of thermal crosstalk between distinct temperature regions of the interleaved temperature profile.

Abstract: A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

Abstract: A supercontinuum optical source comprises a laser source apparatus comprising at least one laser, the laser source apparatus configured for providing first and second signals; a modulator apparatus downstream of at least one laser of the laser source apparatus for modulating at least one of the first and second signals, the modulator apparatus including at least one modulator; a combiner downstream of the modulator apparatus for combining the first and second signals; an amplifier downstream of the combiner for amplifying the first and second signals after combination; a nonlinear element downstream of the amplifier for receiving the first and second signals after amplification, the nonlinear optical element providing spectral broadening responsive to the first signal and wherein the second signal does not substantially contribute to spectral broadening; and an output for outputting spectrally broadened light from the optical supercontinuum source.

Abstract: A system and method for triggering data acquisition in a semiconductor laser system including outputting electromagnetic energy from the semiconductor laser over a range of wavelengths according to a signaling path. The signaling path includes a plurality of discrete data inputs to the semiconductor laser for outputting electromagnetic energy over a range of wavelengths and the signaling path includes one or more perturbances in transitioning from one wavelength to another wavelength along the signaling path. A series of triggering signals are generated for input to a measurement system by the semiconductor laser. The series of triggering signals include a non-uniform period between at least a first triggering signal and an adjacent second triggering signal, and the non-uniform period corresponds to at least one perturbance. The electromagnetic energy output from the semiconductor laser is detected based on the series of triggering signals.

Abstract: A laser assembly (10) that generates a beam (12) includes (i) a gain medium (22) that generates the beam (12) when electrical power is directed to the gain medium (22); (ii) a grating (32) positioned in a path of the beam (12); (iii) a grating arm (34) that retains the grating (32); and (iv) a mover assembly (36) that moves the grating arm (34) about a pivot axis (38). The mover assembly (36) includes a coarse mover (344) that makes large scale movements to the grating arm (34), and a fine mover (352) that makes fine movements to the grating arm (34). With this design, the mover assembly (36) can quickly and accurately move the grating (32) over a relatively large range.