Abstract: The invention relates to an assembly comprising an electric component. The component has an electric part, a control circuit, and a capacitor. At least two lead frames are provided which are embedded into a housing. The part, the control circuit, and the capacitor are arranged on the lead frames, and the control circuit is designed to charge the capacitor and to supply the part with current from the capacitor in a clocked manner. The component has two contacts, and the component is arranged on a support. The support has an electrically conductive layer and the two contacts are connected to the layer in an electrically conductive manner. At least one first part of one lead frame is arranged at a greater distance from the electrically conductive layer than the second lead frame.

Abstract: A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

Abstract: A dielectric electrode assembly, and a method (600) of manufacture thereof, including: a dielectric tube (226) having a cylindrical cross-section and a relative dielectric constant, ?2, the dielectric tube (226) filled with a gas having a relative dielectric constant, ?1; a structural dielectric (225) having a relative dielectric constant, ?3 surrounding the dielectric tube (226); metal electrodes (224) on opposite sides of the structural dielectric (225), the metal electrodes (224) having a flat cross-sectional geometry; and the structural dielectric (225) made from a material selected such that the relative dielectric constants of the structural dielectric (225), the dielectric tube (226), and the gas are interrelated and an approximately uniform electric field is generated within the dielectric tube (226) when power is applied to the metal electrodes (224).

Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

Abstract: A connection structure for a laser and a laser assembly are provided. The connection structure for a laser includes a first insulation substrate, where the first insulation substrate includes a conductive path separately on an upper surface and a lower surface thereof. A second insulation substrate is disposed on the upper surface of the first insulation substrate. An upper surface of the second insulation substrate includes a conductive path. The conductive path on the upper surface of the second insulation substrate is electrically connected to the conductive path on the lower surface of the first insulation substrate via a through-hole. The connection structure for a laser and the laser assembly in the present disclosure are configured to supplying power to a laser.

Abstract: Laser-apparatus includes a fiber-MOPA arranged to deliver amplified seed optical pulses having a wavelength of about 1043 nanometers to a multi-pass ytterbium-doped yttrium aluminum garnet solid-state optical amplifier for further amplification.

Abstract: A fiber laser apparatus includes a pumping light source which launches pumping light, an amplifying optical fiber which includes a core and a noncircular cladding, and absorbs the pumping light to launch laser light, an amplifying coil which has a configuration around which the amplifying optical fiber is wound, a first reflector which is provided on an input side of the amplifying coil and is configured to reflect the laser light toward the amplifying coil, and a second reflector which is provided on a launching side of the amplifying coil, has a lower reflectance than a reflectance of the first reflector, and is configured to reflect the laser light toward the amplifying coil.

Abstract: Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.

Abstract: The invention relates to a laser diode (10) which has at least one active layer (12) which is arranged within a resonator (14) and is operatively connected to a outcoupling element (16), and further at least one contact layer (18) for coupling charge carriers into the active layer (12), wherein the resonator (14) comprises at least a first section (20) and a second section (22), wherein the second section (22) comprises a plurality of separate resistor elements (24) having a specific electrical resistivity greater than the specific electrical resistivity of the regions (26) between adjacent resistor elements (24), wherein a width (W3) of the resistor elements (24) along a longitudinal axis (X1) of the active layer (12) is less than 20 ?m, and a projection of the resistor elements (24) on the active layer (12) along the first axis (Z1) overlap with at least 10% of the active layer (12).

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.

Abstract: The present disclosure relates to methods and apparatuses for providing optical radiation having improved rise/fall times and improved levels of leakage. One method for amplifying optical radiation includes an intermediate stage (220) having an intermediate active optical fiber (222), the intermediate active optical fiber and a final amplifying stage (230) including a final active optical fiber (232), and providing optical radiation to the input of the intermediate active optical fiber, wherein one or more final optical pump sources (235) are together in a low power state such that the optical radiation is substantially absorbed by the intermediate active optical fiber and such that substantially no optical radiation of the amplified wavelength is transmitted by the intermediate stage. The intermediate active optical fiber (222) can then be switched to a transmissive state by switching the final optical pump source(s) (235) to a high power state.

Abstract: An optical apparatus comprises an optical resonator defining an optical resonator path for an optical resonator beam and an optical beam expander optically coupled to the optical resonator, the optical beam expander defining an optical beam expander path for an optical beam expander beam. The optical resonator path and the optical beam expander path may be configured such that the optical resonator beam and the optical beam expander beam at least partially intersect. Such an optical apparatus may be configured for use as a laser target designator or a laser range finder.

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: A multilayer device includes a substrate and a first layer disposed on the substrate. A trench extends through one or both of the substrate and the first layer. The trench has a first sidewall spaced apart from a second sidewall, each sidewall extending from an upper surface of the substrate to a lower surface of the first layer. An optically active region is disposed on the first layer overlying the trench, such that at least a portion of the optically active region is located within a set of lines corresponding to the sidewalls of the trench.

Abstract: A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: An Nd3+ optical fiber laser and amplifier operating in the wavelength range from 1300 to 1450 nm is described. The fiber includes a rare earth doped optical amplifier or laser operating within this wavelength band is based upon an optical fiber that guides light in this wavelength band. The waveguide structure attenuates light in the wavelength range from 850 nm to 950 nm and from 1050 nm to 1150 nm.

Abstract: A quantum cascade laser includes a semiconductor substrate and an active layer having a cascade structure, in which unit layered bodies, each composed of a quantum well light emitting layer and an injection layer, are stacked, wherein the unit layered body has a subband level structure having an upper laser level, a lower laser level, and a relaxation miniband composed of at least two energy levels with an energy spacing smaller than the energy difference (EUL) between the upper laser level and the lower laser level, the energy width of the relaxation miniband is smaller than the energy (ELO?EUL) obtained by subtracting the energy difference (EUL) from the energy (ELO) of longitudinal optical phonons, and electrons subjected to the intersubband transition are relaxed in the relaxation miniband and are injected into a quantum well light emitting layer in a subsequent unit layered body.

Abstract: A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked.

Abstract: A dielectric electrode assembly, and a method of manufacture thereof, including: a dielectric tube having a cylindrical cross-section and a relative dielectric constant, ?2, the dielectric tube filled with a gas having a relative dielectric constant, ?1; a structural dielectric having a relative dielectric constant, ?3 surrounding the dielectric tube; metal electrodes on opposite sides of the structural dielectric, the metal electrodes having a flat cross-sectional geometry; and the structural dielectric made from a material selected such that the relative dielectric constants of the structural dielectric, the dielectric tube, and the gas are interrelated and a uniform electric field is generated within the dielectric tube when power is applied to the metal electrodes.