Abstract: A connection structure for a laser and a laser assembly are provided. The connection structure for a laser includes a first insulation substrate, where the first insulation substrate includes a conductive path separately on an upper surface and a lower surface thereof. A second insulation substrate is disposed on the upper surface of the first insulation substrate. An upper surface of the second insulation substrate includes a conductive path. The conductive path on the upper surface of the second insulation substrate is electrically connected to the conductive path on the lower surface of the first insulation substrate via a through-hole. The connection structure for a laser and the laser assembly in the present disclosure are configured to supplying power to a laser.

Abstract: Techniques are disclosed for forming a package substrate with integrated stiffener. A panel of package substrates are provided. An adhesion layer is then formed on each package substrate of the panel of package substrates. A panel of stiffeners are then attached to the panel of package substrates by the adhesion layer, each stiffener corresponding to a respective package substrate. The panel of package substrates is then singulated into individual package substrates with integrated stiffeners. The stiffeners on the singulated package substrates include tabs that extend to the edges of the package substrates.

Abstract: A laser-frequency stabilizer includes: a light detector that converts a laser beam passing through an iodine cell to an optical output signal, an actuator that changes a resonator length in accordance with a received output voltage, and a control unit that controls the output voltage applied to the actuator. The control unit searches for a target saturated absorption line based on the optical output signal and, when the output voltage when the target saturated absorption line is found is within a normal voltage range that is predetermined corresponding to the target saturated absorption line, locks a oscillation frequency of the laser beam to the target saturated absorption line.

Abstract: A driving condition for causing the tunable wavelength laser to conduct laser oscillation at a first wavelength is acquired. a driving condition for causing the tunable wavelength laser to conduct laser oscillation at the second wavelength is calculated. The tunable wavelength laser is driven based on the driving condition of the second wavelength, feedback control that changes the driving condition of the tunable wavelength laser based on a difference between an output of the wavelength sensing unit and the target value is performed, and the tunable wavelength laser is caused to oscillate at the second wavelength. The driving condition of the tunable wavelength laser obtained by the feedback control when oscillation has occurred at the second wavelength is stored in the memory. Thereafter, the tunable wavelength laser is driven with reference to the stored driving condition of the tunable wavelength laser.

Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

Abstract: A tunable laser source that includes multiple gain elements and uses a spatial light modulator in an external cavity to produce spectrally tunable output is claimed. Several designs of the external cavity are described, targeting different performance characteristics and different manufacturing costs for the device. Compared to existing devices, the tunable laser source produces high output power, wide tuning range, fast tuning rate, and high spectral resolution.

Abstract: A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.

Abstract: Various embodiments of an apparatus that simultaneously cools and thermally decouples adjacent electrically-driven devices in close proximity are provided. In one aspect, an apparatus comprises a first non-silicon heat sink and a first silicon-based heat sink disposed on the first non-silicon heat sink. The first silicon-based heat sink is configured to receive a first electrically-driven device on a first portion of the first silicon-based heat sink and to receive a second electrically-driven device on a second portion of the first silicon-based heat sink. The first silicon-based heat sink includes a first groove or a first opening between the first portion and the second portion such that a heat conduction path between the first electrically-driven device and the first non-silicon heat sink through the first silicon-based heat sink is shorter than a heat conduction path between the first electrically-driven device and the second electrically-driven device through the first silicon-based heat sink.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer 32 of a first conductivity type, a silicon carbide layer 36 of a second conductivity type, a gate trench 20, a gate electrode 79 provided in the gate trench 20, and a protection trench 10 formed to a depth greater than the gate trench 20. A region in the horizontal direction that includes both the gate trench 20 and a protection trench 10 that surrounds the gate trench 20 with at least a part of the gate trench 20 left unenclosed is a cell region, and a region in the horizontal direction that includes a protection trench 10 and in which a gate pad 89 or a lead electrode connected to the gate pad is disposed is a gate region.

Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract: A light emitting device is provide comprising a light emitting diode (LED) chip having a first main surface and a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface. A plurality of electrodes is disposed on the first main surface. A wavelength conversion film is disposed on the second main surface. A mark is formed in the wavelength conversion film. The mark contains orientation information of the light emitting device, thereby enabling the light emitting device to be properly oriented on a receiving substrate.

Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

Abstract: An optical assembly that installs red, green, blue laser diodes (LDs) within a single package is disclosed. The LDs are mounted on a base via respective sub-mounts. Light emitted from the LDs is collimated by collimating lenses and multiplexed by two wavelength filters so as to align optical axes of the light. The multiplexed light has an axis substantially leveled with the axes of the red, green, and blue light measured from the top of the base.

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.

Abstract: A vertical cavity surface emitting laser includes: a laminated body; an insulation layer which is provided over at least a portion of the laminated body; an electrode of which at least a portion is provided over the laminated body; a pad; and a wiring which connects the electrode and the pad, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion, in a plan view, the electrode is provided so as to cover at least a portion of the resonance portion, in the plan view, a width of the wiring is greater than a width of the first distortion imparting portion and is smaller than a width of the electrode.

Abstract: A system-in-package (SiP) module is disclosed. The SiP module includes a substrate and a dam on the substrate. The dam defines a cavity. At least one chip is on the substrate inside the cavity. A printed circuit board (PCB) is bonded to the dam and covers the cavity. A thermal conductive sheet is in the cavity and is disposed between the chip and the PCB. The chip is in thermal contact with the PCB through the thermal conductive sheet. The disclosure also provides a method for manufacturing the SiP module.

Abstract: Provided is a compact and high-luminance semiconductor light-emitting device which has excellent color rendering characteristics and which enables arbitrary selection of emission color depending on the use of the device. The semiconductor light-emitting device includes a light-emitting element assembly configured by a plurality of fluorescent semiconductor light-emitting elements each of which has external connection electrodes respectively connected to an n-type semiconductor layer and a p-type semiconductor layer, wherein at least an outer surface other than the external connection electrodes of each of the fluorescent semiconductor light-emitting elements is coated with a resin containing a fluorescent material. The light-emitting element assembly is configured such that the external connection electrodes of the fluorescent semiconductor light-emitting elements are directly connected in series using solder.

Abstract: One embodiment is directed towards a stabilized laser including a laser to produce light at a frequency and a resonator coupled to the laser such that the light from the laser circulates therethrough. The laser also includes Pound-Drever-Hall (PDH) feedback electronics configured to adjust the frequency of the light from the laser to reduce phase noise in response to light sensed at the reflection port of the resonator and transmission port feedback electronics configured to adjust the frequency of the light from the laser toward resonance of the resonator at the transmission port in response to the light sensed at the transmission port of the resonator, wherein the transmission port feedback electronics adjust the frequency at a rate at least ten times slower than the PDH feedback electronics.

Abstract: There is provided a semiconductor module package including: a base substrate formed by mounting one or more first semiconductor devices thereon; a lead frame formed on a top surface of the first semiconductor device and having an inlet formed to inject a solder paste; and spaces inserted between the first semiconductor device and the lead frame to form a separation space, wherein the solder paste is filled in the separation space.