Abstract: A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.

Abstract: A laser component has a housing, which includes a carrier having a cavity with a bottom surface and a sidewall, wherein the cavity widens starting from the bottom surface, the side wall is inclined relative to the bottom surface by an angle different from 45°, a laser chip, an emission direction of which is oriented parallel to the bottom surface, is arranged on the bottom surface in the cavity, a reflective element is arranged in the cavity and bears on an edge between the bottom surface and the side wall, a reflective surface of the reflective element defines an angle with the bottom surface of the cavity, and the emission direction defines an angle of 45° with the reflective surface of the reflective element.

Abstract: A laser using a laser diode and a narrow wavelength from a resonant atomic transition of a predetermined material. The gain range of the laser diode encompasses the wavelength of the resonant atomic transition. A vapor cell containing a material, such as a metal vapor, providing the resonant atomic transition forming the predetermined wavelength is placed between permanent magnets. In one embodiment the vapor cell has opposing windows positioned at a Brewster's angle and rotated 90° relative to each other. The laser produces a very narrow bandwidth of a predetermined wavelength with high power. The laser configuration eliminates several optical components reducing cost.

Abstract: The present disclosure provides a method of optimising an optical system of a mode-locked laser oscillator or a regenerative, multi-pass or single pass amplifier. The method may include the steps of identifying crystallographic axes of an active laser gain medium crystal, cutting the crystal, and orienting the crystal in the optical system in a predetermined orientation relative to a propagation vector of a laser pulse depending on the required output of the optical system.

Abstract: According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of Si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of Si provided on the upper or the lower surface side, and including a portion located close to the light-emitting portion. The mode-control light waveguide has a structure for coupling light traveling in one of a clockwise circulating mode and a counterclockwise circulating mode, and feeding back the light in the other of the clockwise circulating mode and the counterclockwise circulating mode.

Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.

Abstract: An intra-cavity frequency-tripled OPS laser has a laser-resonator including two optically nonlinear crystals arranged for type-I frequency conversion. One of the crystals generates horizontally polarized second-harmonic radiation from vertically plane-polarized fundamental-wavelength radiation circulating in the laser-resonator. A birefringent filter is located between the optically nonlinear crystals. The birefringent filter selects the fundamental-wavelength, establishes the vertical polarization-orientation, and selectively rotates the polarization-orientation of the second-harmonic radiation from horizontal to vertical. The vertically polarized fundamental and second-harmonic radiations are type-I sum-frequency mixed by the other optically nonlinear crystal.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.

Abstract: A self mode locking laser and corresponding method is described. The laser comprises a resonator (2) terminated by first (3) and second (4) mirrors and folded by a third mirror (5). The third mirror comprises a reflector (15) surmounted by a multilayer semiconductor gain medium (16) that includes at least one quantum well layer and an optical Kerr lensing layer (20). A perturbator is also included that provides a means to induce a perturbation on an intensity of one or more cavity modes of the resonator. The pertubator is employed to induce a small perturbation on the intensity of the cavity modes of the resonator which is sufficient for the optical Kerr lensing layer to induce mode locking on the output field. The second mirror (4) comprises an intensity saturable mirror that provides a means for reducing the pulse widths of the generated output field e.g. to around 100 fs.

Abstract: A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract: A laser device includes a gain medium configured to receive an excitation light and emit a fluorescence signal based on an amount of stored excitation light accumulated in the gain medium. The laser device includes a pump source configured to pump the excitation light to the gain medium using a supply voltage. The laser device includes one or more photodetectors configured to detect the fluorescence signal. The laser device also includes a comparator configured to generate an alert signal indicating an intensity of the detected fluorescence signal is greater than a threshold. The alert signal can trigger certain actions to occur for disrupting a destructive lasing action including one or more of ceasing output of the supply voltage to the pump source, spoiling an optical cavity to obstruct lasing action through the gain medium, or inserting a seed light to extract gain from the gain medium in a non-destructive manner.

Abstract: An optical package having a patterned submount, an optoelectronic device mounted to the patterned submount, a spacer affixed on one side to the patterned submount, the spacer having a bore hole therethrough wherein the optoelectronic device is positioned, and an optical element affixed to the spacer on a side opposite the patterned submount and covering the spacer bore hole. The patterned submount may be a circuit board. The optoelectronic device may be a VCSEL. The spacer may be affixed to the circuit board, for example, using an epoxy preform or an adhesive laminate. The spacer may, for example, be manufactured from a sheet of stainless steel or from a circuit board. The optical element may be, for example, a diffuser, a concave lens, a convex lens, a holographic element, polarizers, or diffraction gratings. The optical element may be affixed to the spacer using an epoxy preform or an adhesive laminate.

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.

Abstract: A laser includes first through fourth gain media, first through fifth wavelength selective filters, and first through fourth wavelength selective mirrors. The first through fourth gain media emit laser beams of different wavelengths. Each of the first through fifth wavelength selective filters includes first through fourth input/output ports. The fifth wavelength selective filter selects light of periodic wavelengths. The first through fourth wavelength selective filters have their respective first input/output ports connected to the first through fourth gain media, respectively, have their respective fourth input/output ports connected to the first through fourth wavelength selective mirrors, respectively, and have their respective second input/output ports connected to the first through fourth input/output ports, respectively, of the fifth wavelength selective filter.

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

Abstract: A method of manufacturing a nonvolatile memory device includes sequentially forming, on a first wiring layer extending in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse. The method further includes oxidizing the first layer and the second layer, removing oxygen from the oxidized first layer by annealing, forming a conductive third layer on the oxidized second layer after removing oxygen from the oxidized first layer, and forming a second wiring layer on the third layer. The second wiring layer extends in a second direction crossing the first wiring layer.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: An apparatus includes a laser diode, a heater arrangement, and a circuit. The laser diode is configured to facilitate heat assisted magnetic recording during a lasing state. The heater arrangement is positioned proximate the laser diode. The circuit electrically couples the laser diode and the heater arrangement in a parallel relationship. The circuit is configured to alternately operate the laser diode in a lasing state and a non-lasing state, and to activate the heater arrangement during the non-lasing state to warm a junction of the laser diode.