Abstract: A method for providing selective memory error protection responsive to a predictable failure notification associated with at least one portion of a memory in a computing system includes: obtaining an active error correcting code (ECC) configuration corresponding to the portion of the memory; determining whether the active ECC configuration is sufficient to correct at least one error in the portion of the memory affected by the predictable failure notification; when the active ECC configuration is insufficient to correct the error, determining whether data corruption can be tolerated by an application running on the computing system; when data corruption cannot be tolerated by the application, determining whether a stronger ECC level is available and, if a stronger ECC level is available, increasing a strength of the active ECC configuration; and when data corruption can be tolerated, performing page reassignment and aggregation of non-critical data.

Abstract: A memory system includes a memory module that supports error detection and correction (EDC) in a manner that relieves a memory controller or processor of some or all of the computational burden associated with EDC. Individual EDC components perform EDC functions on subsets of the data, and share data between themselves using relatively short, fast interconnections.

Abstract: A method for managing throughput in a distributed storage network includes encoding data to produce a plurality of sets of encoded data slices. According to the method, one or more write slice requests are generated corresponding to one or more sets of encoded data slices, and write slice requests are then output to a set of distributed storage and task execution units. For each distributed storage and task execution unit, a data ingest rate is generated and a write threshold number of distributed storage and task execution units is determined. A transmit data rate is determined and write slice requests are determined, followed by the generation write slice requests to the distributed storage and task execution units. A write threshold number of write slice requests is then input to the distributed storage and task execution units.

Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output command signals and setting signals. The second semiconductor device may be configured to decode the command signals, extract setting codes from the setting signals, and test a memory cell array accessed by address patterns during at least one operation section corresponding to the setting codes to confirm whether the memory cell array includes at least one failed memory cell.

Abstract: Apparatuses and methods for temperature related error management are described. One or more apparatuses for temperature related error management can include an array of memory cells and a write temperature indicator appended to at least one predetermined number of bytes of the stored data in the array of memory cells. The apparatuses can include a controller configured to determine a numerical temperature difference between the write temperature indicator and a read temperature indicator and determine, from stored operations, an error management operation for the stored data based, at least in part, on comparison of the numerical temperature difference to a temperature difference threshold.

Abstract: Systems and methods disclosed herein provide for automatically diagnosing mis-compares detected during simulation of Automatic Test Pattern Generation (“ATPG”) generated test patterns. Embodiments of the systems and methods provide for determining the origin of a mis-compare based on an analysis of the generated test patterns with a structural simulator and a behavioral simulator.

Abstract: A method and circuit for implementing enhanced scan data testing with decreased scan data interdependence for compressed patterns in On Product Multiple Input Signature Register (OPMISR) testing through spreading in a stump mux data chain structure, and a design structure on which the subject circuit resides are provided. The stump mux chain structure includes a plurality of stump muxes connected in series by a respective rotation function. A respective exclusive OR (XOR) spreading function included with each of the plurality of stump muxes provides channel inputs. XOR inputs are applied to each XOR spreading function providing unique input combinations for each respective channel included with each of said plurality of stump muxes. The respective rotation function enables test data to be rotated as scan data enters each stump mux to further make the test data unique for each stump mux.

Abstract: A method of operating a storage controller is provided. The method includes receiving host data for storage within a storage system, the storage system configured as a plurality of sequentially numbered data blocks, each comprising a plurality of pages, storing the host data in a data buffer, and organizing the host data into storage data pages. The method also includes sequentially writing the storage data into page stripes, reading the storage data from the pages, and comparing the read storage data with the host data stored in the data buffer. The method further includes for each page of storage data that fails the comparison, rewriting the storage data for that page into a different page, and when at least some of the storage data within the storage system passes the comparison, transmitting a signal to the host.

Abstract: An apparatus includes an interface and a control circuit. The interface may be configured to process read/write operations to/from a memory. The control circuit may be configured to create dependencies between a current bit in a sequence of data bits and neighboring bits in the sequence of data bits to generate mapped bits in response to a condition in a region of the memory being true, write the mapped bits among at least two memory cells in the region of the memory with at least two of the mapped bits stored in each of the memory cells, where the dependencies mitigate a hard error due to one of the at least two cells being stuck in a fixed state, and write the sequence of data bits in the region of the memory in response to the condition in the region of the memory being false.

Abstract: Some embodiments include apparatuses and methods having first memory cells, a first access line configured to access the first memory cells, second memory cells, and a second access line configured to access the second memory cells. One of such apparatuses can include a controller configured to cause data to be stored in a memory portion of the first memory cells, to cause a first portion of an error correction code associated with the data to be stored in another memory portion of the first memory cells, and to cause a second portion of the error correction code to be stored in the second memory cells. Other embodiments including additional apparatuses and methods are described.

Abstract: A method and circuit are provided for implementing enhanced scan data testing for test time reduction and decreased scan data interdependence with on product multiple input signature register (OPMISR++) testing, and a design structure on which the subject circuit resides. A respective Pseudo-Random Pattern Generator (PRPG) provides channel input patterns to a respective associated scan channel used for the OPMISR++ diagnostics. Control inputs are coupled to the Pseudo-Random Pattern Generator (PRPG) providing PRPG control distribution. The PRPG selectively provides controlled channel input patterns for the respective scan channel responsive to the control inputs.

Abstract: Variable width error correction is described. A memory controller can determine, from a memory address, what type of error correction is to be applied for the address region of that memory address and can generate commands for the memory device. An amount of error correction metadata associated with that address region may vary depending on the spatial location of the address region. In some cases, two translations may be performed: one by a processor using information set up by an operating system and another by the memory controller (or the memory device). In other cases, a single translation may be performed, for example by a processor using information set up by the operating system, which can determine the variable error correction during translation of a virtual address region to a real physical address region.

Abstract: An integrated circuit receives test-control information that is phase encoded on a scan clock used for testing a scan chain within the IC. The phase encoding does not affect the normal use of the scan clock and scan test chain and allows additional test-related data such as power supply, clock, and additional global and specialized status data to be collected by a secondary test data storage system such as a shift register. The phase encoding further controls selectively outputting the enhanced test status or the traditional scan test outputs.

Abstract: A hardware assisted scheme for testing IC memories using scan circuitry is disclosed. An IC includes a memory implemented thereon and a chain of serially-coupled scan elements to enable the inputting of test vectors. The scan elements include first and second subsets forming write and read address registers, respectively, a first control flop, and a second control flop. During a launch cycle of a test operation, a first address loaded into the write address register is provided to a write address decoder to effect a write operation. Also responsive to the launch cycle, the first control flop is configured to cause the first address to be provided to the read address register, while the second control flop causes data to be written into the memory. During a capture cycle, the first address is provided to a read address decoder and the second control flop causes a read of data therefrom.

Abstract: A method for performing a cycle update on a RAID storage device by a storage system includes storing first data in a first buffer. The method additionally includes retrieving a command block associated with the first data, and executing the command block to perform a set of operations in a sequence specified by the command block. The set of operations includes reading second data from an address of the RAID storage device and generating redundant data based on the first data with the second data. The set of operations further includes storing the redundant data in a second buffer and writing the first data to the address of the RAID storage device when the RAID storage device is a data storage device, and writhing the redundant data stored in the second buffer to the address of the RAID storage device when the RAID storage device is a parity storage device.

Abstract: A printed circuit board, an in-circuit test structure and a method for producing the in-circuit test structure thereof are disclosed. The in-circuit test structure comprises a via and a test pad. The via passes through the printed circuit board for communicating with an electrical device to be tested on the printed circuit board. The test pad is formed on an upper surface of the printed circuit board and covering the via, wherein a center of the via deviates from a center of the test pad. In the in-circuit test, the accuracy of the test data can be improved by means of the in-circuit test structure provided by the present invention, and thus the reliability of the test result is ensured. Also, the test efficiency of the in-circuit test is improved.

Abstract: A system and method for testing performance of a plurality of memory modules includes generating a clock signal at a set frequency and sending the clock signal to the memory modules. An initial data pattern is sent to an input of a first memory module. A subsequent data pattern received from the first memory module is delayed by a predetermined delay time and sent to an input of a last memory module. The initial data pattern and the subsequent data pattern received from the output of the last memory module are compared and a performance of the memory modules is also calculated.

Abstract: A storage system is provided which includes: a storage device including a first memory, which may be nonvolatile memory, and a second memory, which may be a device memory, and configured to request a test on at least one of the first and second memories; and a host configured to test the at least one memory in response to the request for the memory test from the storage device and store the test result in the first memory or a third memory.

Abstract: A nonvolatile memory system includes a nonvolatile memory device including a distribution table suitable for storing recovery read level intervals that are set by being changed through multiple stages according to a distribution value of threshold voltage levels of a plurality of memory cells, measured at a reference read level, is changed through the multiple stages; and a memory controller suitable for reading measurement data from the memory cells by additionally using a measurement read level, searching for a difference value between the normal data and the measurement data from the multiple stages of distribution values stored in the distribution table, and recovering the normal data based on a recovery read level interval corresponding to a searched distribution value, when an error occurs in normal data read from the memory cells by using the reference read level.

Abstract: Methods and systems are disclosed for decoding codewords, wherein codewords comprise at least one circulant and are stored in a first dimension of a matrix, and wherein each circulant in a codeword is associated with a location in a second dimension in the matrix. The method includes determining whether a first location in a second dimension of a first circulant of a first codeword corresponds to a second location in the second dimension of a second circulant of a second codeword. The method includes, in response to determining that the first location does not correspond to the second location, decoding the first and second circulant with a first decoding process. The method includes, in response to determining that the first location corresponds to the second location, decoding the first and second circulant with a second decoding process.