Abstract: An array substrate, a method of manufacturing the same, and a display panel are provided. The method includes: providing a base substrate including a display area and a wiring area at a periphery of the display area; in the process of forming a connection electrode in the wiring area, remaining a first photoresist layer for performing the patterning process and covering the connection electrode; depositing a film of reflective pixel electrode layer on the base substrate and performing a patterning process on the film of reflective pixel electrode layer to form a reflective pixel electrode layer in the display area and to remove the film of reflective pixel electrode layer in the wiring area to expose the first photoresist layer; removing a second photoresist layer for patterning the thin film of reflective pixel electrode layer on the reflective pixel electrode layer with the first photoresist layer in the wiring area.

Abstract: Photoactive materials comprising organic-inorganic hybrid halide perovskite compounds are provided. Photovoltaic cells and light-emitting devices incorporating the photoactive materials into their light-absorbing and light-emitting layers, respectively, are also provided. The halide perovskites have an amAMX3 perovskite crystal structure, wherein am is an alkyl diamine cation, an aromatic diamine cation, an aromatic azole cation, a cyclic alkyl diamine cation or a hydrazinediium cation; A is a monovalent alkylammonium cation or an alkali metal cation; X is a halide ion or a combination of halide ions; and M is an octahedrally coordinated bivalent metal atom.

Abstract: A method for forming a semiconductor device structure includes the steps of: forming a conductive layer over a semiconductor substrate; forming a first dielectric structure and a second dielectric structure over the conductive layer; forming a first spacer over a sidewall of the first dielectric structure and a second spacer over a sidewall of the second dielectric structure; removing a portion of the conductive layer exposed by the first spacer and the second spacer to form a first conductive structure and a second conductive structure; and growing a third spacer over the first spacer and a fourth spacer over the second spacer such that an air gap is formed between the first conductive structure and the second conductive structure and sealed by the third spacer and the fourth spacer.

Abstract: Provided is a technique capable of implementing efficient transport and processing related to multi-step processing in the case of a link-type vacuum processing apparatus with related to an operating method of a vacuum processing apparatus. The operating method of the vacuum processing apparatus according to the embodiment, in order to minimize time required for all processing of a plurality of wafers in a multi-step processing, includes a first step (steps 601 to 607) of selecting one first processing unit and one second processing unit from a plurality of processing units for each wafer and determining a transport schedule including a transport path using the selected processing units. In the first step, for at least one wafer, a transport schedule including a transport path is configured using the selected first processing unit by excluding at least one first processing unit from the plurality of first processing units.

Abstract: In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including carbon nanotubes (CNTs) embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an interlayer dielectric (ILD) layer is formed over the doped source/drain region and the sacrificial gate structure, a source/drain opening is formed by patterning the ILD layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

Abstract: To provide an organic EL device having (1) high luminous efficiency and high power efficiency, (2) low turn on voltage, (3) low actual driving voltage, and (4) a long lifetime, by combining various materials for an organic EL device, which are excellent in hole injection/transport performances, electron injection/transport performances, electron blocking ability, stability in a thin-film state, and durability, so as to allow the respective materials to effectively reveal their characteristics. In the organic EL device having at least an anode, a hole transport layer, a light emitting layer, an electron transport layer and a cathode in this order, the hole transport layer includes an arylamine compound of the following general formula (1), and the electron transport layer includes a compound of the following general formula (2) having a benzazole ring structure.

Abstract: A light emitting device includes a plurality of light emitting elements, a plurality of color conversion elements and a protective layer. The plurality of color conversion elements are disposed on at least a portion of the plurality of light emitting elements. The protective layer is disposed on the plurality of color conversion elements and has a multilayer structure.

Abstract: A composition for a light-emitting element contains a host material and a guest material. The host material is a compound containing at least one of an aromatic hydrocarbon group and a heterocyclic group and the guest material is a compound having a condensed heterocyclic group containing at least one of a boron atom, an oxygen atom, a sulfur atom, a selenium atom, an sp3 carbon atom, and a nitrogen atom in a ring. A difference ?E between an energy value at the maximum peak of a emission spectrum of the host material at 25° C. and an energy value at a peak on the lowest energy side of an absorption spectrum of the guest material at 25° C. is 0.50 eV or less, and a difference ?S between an energy value at the maximum peak of an emission spectrum of the guest material at 25° C. and an energy value at the maximum peak of an emission spectrum of the guest material at 77 K is 0.10 eV or less.

Abstract: A quantum device includes a qubit chip having a plurality of qubits and an interposer attached to and electrically connected to the qubit chip. The device also includes a substrate handler attached to one side of the qubit chip or to one side of the interposer, or both so as to be thermally in contact with the qubit chip or the interposer, or both. The substrate handler includes a plurality of vias, at least a portion of plurality of vias being filled with a non-superconducting material, the non-superconducting material being selected to dissipate heat generated in the qubit chip, the interposer or both.

Abstract: A display panel, a display device, and a method for manufacturing a display panel are provided. The display panel includes a substrate and a display device layer. The substrate includes a display area and a non-display area positioned at a periphery of the display area. The display device layer is disposed on the substrate and includes an anode, a pixel defining layer, a common layer, and a cathode which are sequentially stacked. The anode covers the display area and extends to the non-display area, the pixel defining layer and the common layer are both disposed on the display area and neither extend to the non-display area on at least one side of the display area, and the cathode covers the common layer and extends to the non-display area to be in contact with the anode.

Abstract: Provided is an organic light emitting device including an anode; a cathode; and a light emitting layer provided between the anode and the cathode, the device further including an electron control layer provided between the light emitting layer and the cathode and including a compound of Chemical Formula 1: and an electron transfer layer provided between the electron control layer and the cathode and including a compound of Chemical Formula 3:

Abstract: Provided is an LED display unit, comprising a front body, a lamp plate and a rear body, wherein the lamp plate is bendable and flexible, and the rear body comprises a plurality of rear body units, the front body is covered on one side of the lamp plate provided with LED lamps, each rear body unit is fixedly connected to a side of the lamp plate facing away from the LED lamps, and adjacent rear body units are arranged at intervals; by adopting the bendable and flexible lamp plate, every single LED display unit can be directly adjusted into a curved surface or any curved surface shape; a plurality of rear body units are fixed on the lamp plate, and gaps exist between the rear body units, which is beneficial to releasing bending stress and preventing the rear body from breaking during bending.

Abstract: The purpose of the present invention to provide a wavelength conversion layer containing semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. A wavelength conversion layer containing semiconductor nanoparticles, wherein the wavelength conversion layer can convert light having a wavelength of 450 nm to light having a peak wavelength of 500 nm to 550 nm, or light having a peak wavelength of 600 nm to 660 nm; each of the semiconductor nanoparticles contained in the wavelength conversion layer has a core and a shell having one or more layers; the core contains In and P; and at least one layer of the shell is ZnXTe (wherein X represents Se or S, or both Se and S).

Abstract: A method and device for inspection or analysis of a semiconductor sample is provided. The method includes: sandwiching a processed semiconductor sample between two blocks of a semiconductor material; polishing the sandwiched sample such that an even surface is obtained; and measuring the surface of the sandwiched sample. The blocks of a semiconductor material comprise the same semiconductor material as the semiconductor sample.

Abstract: A method of expanding a sheet includes the steps of gripping the sheet with a first gripping unit and a second griping unit and gripping the sheet with a third gripping unit and a fourth gripping unit, and expanding the sheet by moving the first gripping unit and the second griping unit away from each other in first directions relatively and moving the third gripping unit and the fourth gripping unit away from each other in second directions relatively. In the step of expanding the sheet, the states of the sheet that is under tension are detected, and movement of the first gripping unit, the second griping unit, the third gripping unit, and the fourth gripping unit is controlled based on the detected states of the sheet.

Abstract: The present invention is directed to an organic light emitting diode (100) comprising: at least one anode electrode (120); at least one emission layer (150), wherein the emission layer comprises at least one emitter dopant that emits visible light at operation of the OLED (100); an electron transport layer stack (160) of at least two electron transport layers (161/162), and wherein a) the first electron transport layer (161) comprises i) a first organic aromatic matrix compound having a MW of about ?400 to about ?1000 and a dipole moment of about ?0 Debye and about ?2.5 Debye, wherein the first electron transport layer (161) is free of a polar organic aromatic phosphine compound; and b) the second electron transport layer (162) comprises two organic aromatic matrix compounds, which are a mixture of: i) the first organic aromatic matrix compound; and ii) a polar organic aromatic phosphine compound having a MW of about ?400 to about ?1000, and a dipole moment of about >2.

Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.

Abstract: An imaging device according to the disclosure includes: a semiconductor substrate including an effective pixel region in which a plurality of pixels are disposed, and a peripheral region provided around the effective pixel region; an organic photoelectric conversion layer provided on side of the semiconductor substrate on which a light receiving surface is disposed; a first sealing layer provided on the semiconductor substrate; a recess provided in the first sealing layer on the effective pixel region; and a light shielding film provided on the first sealing layer on the peripheral region.

Abstract: A method of treating a semiconductor substrate includes converting a first main side of the semiconductor substrate having a first coefficient of static friction relative to a surface of a wafer table to a second coefficient of static friction relative to the surface of the wafer table, wherein the second coefficient of static friction is less than the first coefficient of static friction. A photoresist layer is applied over a second main side of the semiconductor substrate having the first coefficient of static friction. The second main side opposes the first main side. The semiconductor substrate is placed on the wafer table so that the first main side of the semiconductor substrate faces the wafer table.

Abstract: A method includes forming a dielectric layer over a fin structure, forming a dummy gate crossing over the dielectric layer, forming a spacer on a sidewall of the dummy gate, etching the dielectric layer and the fin structure, such that the dielectric layer and the fin structure are recessed from an outer sidewall of the spacer, and etching the fin structure, such that the fin structure is recessed from an end surface of the dielectric layer.