Patents Examined by Eliza Osenbaugh-Stewar
  • Patent number: 8759756
    Abstract: A time-of-flight mass spectrometer includes a holder that holds a sample, an irradiation unit that irradiates a surface of the sample with primary ions, an extractor electrode that opposes the sample, and an ion detector that detects a secondary ion emitted from the surface of the sample in accordance with a time of flight of the secondary ion. The surface of the sample has first and second positions, and the irradiation unit and the holder are disposed so that the primary ions are obliquely incident upon the surface of the sample. A primary ion reaches the first position before another primary ion reaches the second position. A potential gradient generator generates a potential gradient so that a potential difference between the second position and the extractor electrode is larger than a potential difference between the first position and the extractor electrode.
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: June 24, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kota Iwasaki
  • Patent number: 8754369
    Abstract: A measuring method including the steps of providing a chamber, drawing a vacuum in the chamber, placing a sample into the chamber, heating the sample to desorb a target species from the sample, passing a carrier gas through the chamber, the carrier gas mixing with the desorbed target species to form a mixture, and analyzing the mixture.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: June 17, 2014
    Assignee: The Boeing Company
    Inventor: Carlton N. Christy
  • Patent number: 8742373
    Abstract: A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: June 3, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Ludovic Godet, Christopher R. Hatem