Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system tor forming the material are also disclosed.

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

Abstract: A method comprises: forming a first layer stack on a first substrate by means of a multiplicity of coating processes, each coating process of which forms at least one layer of the first layer stack; detecting an optical spectrum of the first layer stack; determining correction information for at least one coating process of the multiplicity of coating processes using a model, wherein the model provides a right-unique mapping function between a deviation of the spectrum from a desired spectrum and the correction information; and changing at least one control parameter for controlling the at least one coating process of the multiplicity of coating processes using the correction information; and forming a second layer stack on the first or a second substrate by means of the multiplicity of coating processes using the changed control parameter, each coating process of which forms at least one layer of the second layer stack.

Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.

Abstract: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Abstract: A method for imparting an optical element with at least one light influencing property in a gradient pattern. The method includes (a) providing an optical substrate having first and second surfaces; (b) depositing a first composition over the first surface of the optical substrate so as to provide a first treated surface region and an untreated surface region, the first composition including a material which provides a light influencing property; (c) depositing a second composition over the optical substrate of (b) to provide a second treated surface region over the untreated surface region and over a portion of the first treated surface region to form a first overlap region; and (d) spinning the optical substrate of (c) thereby providing the optical element having a light influencing property in a gradient pattern.

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: Time projection chambers are useful for high energy particle physics, nuclear physics, and astronomy. To enhance the particle detection efficiency and performance of the projection chambers functional bilayer thin film coatings based on the atomic layer deposition method are utilized. Coating material selection is based on Auger neutralization process ion induced electron emission from metallic surfaces (e.g., Mo or W) combined with a high secondary electron emission coefficient. Application of high secondary electron emission materials (e.g., MgO and CaF2) enhances the multiplication of these emitted electrons from ion induction processes. Therefore, using suitable bilayer coatings the overall TPC signal detection efficiency can be increased.

Abstract: A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Abstract: Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.

Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Abstract: This disclosure relates to a method for preparing a polymer thin film with water repellency and oil repellency, including: thermally decomposing a thermal initiator to form a radical; reacting the radical with a monomer mixture of a specific composition to synthesize a polymer; and depositing the synthesized polymer on a substrate, and a polymer thin film with water repellency and oil repellency including a polymer resin including (meth)acrylate-based repeat units substituted with a fluorine-containing functional group and repeat units derived from a compound including at least two reactive functional groups at a specific ratio.

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

Abstract: One or more aspects of the present disclosure provide optical element transfer structures that include an optical element releasably coupled with a transfer medium and methods of making and using the optical element transfer structures. The optical element transfer structures can be used to dispose an optical element onto an article, whereby the optical element imparts a structural color to the article.

Abstract: A method of in situ monitoring a thin film deposition process on a substrate, the method including a) defining a desired spectrum, the desired spectrum being a transmission or a reflection spectrum; b1) illuminating the substrate by means of a light source emitting light within the desired spectrum, b2) receiving light reflected from the substrate or transmitted through the substrate, b3) determining a transmission or a reflection spectrum out of the received light; c) defining a spectrum or a combination of spectra in dependency of the spectrum determined in step b3) to be a current spectrum; d) determining a weight spectrum as a function of the current spectrum; e) calculating a real number as a function of the current spectrum, of the desired spectrum and of the weight spectrum; f) exploiting the real number as indication for a deviation of the current spectrum from the desired spectrum.

Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Abstract: Methods for coating a glass-based article, for example a cover glass, with a coating layer that is not deposited on the perimeter edge of the glass-based article. The methods may include direct patterning of a sacrificial material over a first region on a top surface the glass-based article but not a second region on the top surface of the glass-based article. The first region includes at least a portion of a perimeter edge of the glass-based article that is to be protected from deposition of the coating layer. After direct patterning of a sacrificial material and deposition of a coating layer, the sacrificial material may be removed such that the coating layer is disposed on the second region on the top surface of the glass-based article and not the first region. These methods may be used to make a glass-based article with non-edge-to-edge coating layers.

Abstract: A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.