Abstract: A cup type plating apparatus in which plating is carried out by supplying plating solution to a wafer placed on an opening at a top of a plating tank while an anode and the wafer connected to a cathode provided in the plating tank are electrically connected, and the anode and the cathode are separated by a diaphragm provided in the plating tank, provided with a division wall between the anode and the wafer formed in a shape capable of separating the anode and the wafer from each other and having a plurality of openings covered with a diaphragm. The concentration of the plating solution supplied to the plating tank separated by the division wall is made to be appropriately controllable. Further, a unit for stirring is provided capable of forcibly altering the flow of plating solution at the target surface of plating.

Abstract: A solid phase synthesis method for the preparation of diverse sequences of separate polymers or nucleic acid sequences using electrochemical placement of monomers of nucleic acids at a specific location on a substrate containing at least one electrode that is preferably in contact with a buffering or scavenging solution to prevent chemical crosstalk between electrodes due to diffusion of electrochemically generated reagents.

Abstract: An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

Abstract: A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

Abstract: An apparatus capable of assisting in controlling an electrolyte flow and distribution of an electric field, a magnetic field, or an electromagnetic field in order to process a substrate is provided with improved fluid distribution. A support member having a top surface and a bottom surface contains at least one support member electrolyte channel. Each support member electrolyte channel forms a passage between the top surface and the bottom surface and allows the electrolyte to flow therethrough. A pad is attachable to the support member and contains at least one set of pad electrolyte channels also allowing for electrolyte flow therethrough to the substrate. Each support member electrolyte channel is connected to one set of pad electrolyte channels by fluid distribution structure. A method of assisting in control of the electrolyte flow and distribution of the electric field, the magnetic field, or the electromagnetic field, utilizing the apparatus, is also provided.

Abstract: An apparatus capable of assisting in controlling an electrolyte flow and an electric field distribution used for processing a substrate is provided. It includes a rigid member having a top surface of a predetermined shape and a bottom surface. The rigid member contains a plurality of channels, each forming a passage from the top surface to the bottom surface, and each allowing the electrolyte and electric field flow therethrough. A pad is attached to the rigid member via a fastener. The pad also allows for electrolyte and electric field flow therethrough to the substrate.

Abstract: A structure, e.g., a photonic band gap material, exhibiting substantial periodicity on a micron scale is provided. Fabrication involves the steps of providing a template comprising a colloidal crystal, placing the template in an electrolytic solution, electrochemically forming a lattice material, e.g., a high refractive index material, on the colloidal crystal, and then removing the colloidal crystal particles to form the desired structure. The electrodeposition provides a dense, uniform lattice, because formation of the lattice material begins near a conductive substrate, for example, and growth occurs substantially along a plane moving in a single direction, e.g., normal to the conductive substrate. Moreover, because the electrochemically grown lattice is a three-dimensionally interconnected solid, there is very little shrinkage upon subsequent treatment.

Abstract: This invention describes a rapid tooling process that integrates solid freeform fabrication (SFF) with electroforming to produce metal tools including molds, dies, and electrical discharge machining (EDM) electrodes. An SFF part is metalized by electroless plating and then placed in an electroplating solution, where metal is deposited upon the part by electrolysis. When the desired thickness of metal has been reached, the SFF part is removed from the metal shell. The shell is then optionally backed with other materials to form a mold cavity, and EDM electrode, or other desired parts for tooling. Thermomechanical modeling and numerical simulation with finite element analysis (FEA) is used to determine the geometry of the SFF part and the electroform thickness for minimizing the manufacturing time and cost while satisfy the tooling requirement.

Abstract: A nozzle plate assembly of micro-injecting device and a method for manufacturing the same in which a master plate which defines a nozzle region is dipped into an electrolyte in which NiH2/SO3/H, NiCl2, H3BO3, C12H25SO4/NaS and deionized water are mixed in a predetermined ratio. Then, current having a predetermined density is applied several times, to thereby form a nozzle plate having a plurality of nozzles. The nozzle plate so formed has different roughnesses at inner and outer surfaces, to thereby eliminate ink-crosstalk and the generation of air bubbles in the ink feed channel.

Abstract: A method for the electrolytic production of injection moulding moulds (6) made of nickel for the production of CDs with the nickel, preferably in the form of pellets (2), being switched as anode and a workpiece (3), forming the counterpart to the injection moulding mould to be produced, being switched as cathode and both the nickel as well as the workpiece being held in an electrolytic solution (1) which has been added with a combination of halogens.

Abstract: An electroplating system circulates solution between an anode and a workpiece mounted to a cathode. A shaped agitation paddle is reciprocated immediately adjacent to the cathode workpiece to improve performance of the system. The paddle is an elongated prism having a generally flat side that is parallel to the workpiece. The flat side has a fluid port connected to a pump. The solution may be pumped with either positive pressure to force the solution against the surface of the workpiece, or negative pressure to draw the solution away from the surface of the workpiece. In an alternate embodiment, the cathode workpiece is rotated in the solution above an anode with a stationary, shaped paddle in between them.

Abstract: The present invention provides a method of producing a zinc oxide film, which comprises applying current between a conductive base member immersed in an electrodepositing bath and a counter electrode immersed in the electrodepositing bath to form a zinc oxide film on the conductive base member, wherein the electrodepositing bath is maintained at a temperature of 50° C. or more and has a temperature profile such that the temperature of the electrodepositing bath is lower in the final stage of electrodeposition than in the initial of electrodeposition. By the present method, a zinc oxide film with the excellent effect of light containment is stably produced in a short time, thereby producing a solar cell with a high efficiency at low a cost.

Abstract: A method of manufacturing a flexible abrasive member, includes the steps of providing a porous substrate, impregnating the substrate with an electrically isolating material, treating a side of the impregnated substrate so as to provide areas with different properties as to water or solvent resistance, washing the impregnating substrate with water or solvent so as to wash away the areas with relatively low water or solvent resistance for obtaining a prepared substrate with discrete areas, placing the prepared substrate in a metal deposition math, and depositing metal in the discrete areas in the presence of abrasive particles so as to form abrasive metal deposits.

Abstract: A method of manufacturing a semiconductor component includes depositing a first electrically conductive layer (675) over a substrate (270), forming a patterned plating mask (673) over the first electrically conductive layer, coupling a first plating electrode (250) to the first electrically conductive layer without puncturing the plating mask, and plating a second electrically conductive layer onto portions of the first electrically conductive layer. A plating tool for the manufacturing method includes an inner weir (220) located within an outer weir (210), an elastic member (230) over a rim (211) of the outer weir, a pressure ring (240) located over the rim of the outer weir and the elastic member, and a plurality of cathode contacts (250, 251, 252, 253) located between the pressure ring and the outer weir. The substrate is positioned between the elastic member and the pressure ring.

Abstract: The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

Abstract: A method for electroplating copper in trenches, including the steps of providing a semiconductor substrate having a trench formed therein and electrolytically depositing a first copper containing layer having an upper surface and a predetermined thickness within the trench. The first copper deposition step has a first ratio of brighteners concentration:levelers concentration. Then a second copper containing layer having an upper surface and a predetermined thickness is electrolytically deposited over the first copper containing layer. The second copper deposition step has a second ratio of brighteners concentration:levelers concentration that is less than the said first ratio of brighteners concentration:levelers concentration. The second copper containing layer upper surface having a greater planarity than the first copper containing layer upper surface due to an increased concentration of levelers relative to the brighteners in the electrolytic bath.

Abstract: A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the metal. A cover metal may be plated onto the metal in the gaps. The cover metal protects the principal metal during subsequent etching procedures.

Abstract: A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.

Abstract: This invention relates to an improved apparatus and method for electrolytic descaling of steel strips. The apparatus comprises electrodes integrated with nozzles having jet openings for dispensing electrolyte onto the surface of the steel strips. By jetting the electrolyte to the steel strip in the air and applying a voltage to the electrode, the scale on the surface of the steel strip is removed. This jetting of electrolyte reduces the size requirement of the electrolyte tank storing the electrolyte because the required quantity of electrolyte decreases. The present invention does not require immersion of the electrodes in the electrolyte and thus avoids the problem of short-circuiting that occurs with submerged electrodes. This results in a significant improvement in electric power efficiency.

Abstract: In order to improve the adhesion property of an electrical steel sheet with no film of inorganic mineral matter on its surface, especially with respect to a tension-imparting insulating film, anodic electrolysis in an aqueous solution of silicate is carried out before insulating film formation to form a silicic film excellent in adhesion property with respect to the insulating film in a thin and strongly attached condition on the steel sheet surface. By this, a tension-imparting insulating film can be formed on a grain-oriented electrical steel sheet with excellent adhesion property to reduce the iron loss of the oriented electrical steel sheet. Also in the case of an insulating film that is not of the tension-imparting type, enhancement of film heat resistance and improvement of insulating property by increasing a film thickness are possible.