Patents Examined by Gregory Mills
  • Patent number: 7329611
    Abstract: In a formation method for forming a fine structure in a workpiece containing an etching control component, using an isotropic etching process, a mask having an opening is applied to the workpiece, and the workpiece is etched with an etching solution to thereby form a recess, corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.
    Type: Grant
    Filed: April 10, 2003
    Date of Patent: February 12, 2008
    Assignee: NEC Corporation
    Inventors: Shinichi Uehara, Yuko Sato, Ken Sumiyoshi, Setsuo Kaneko, Jin Matsushima
  • Patent number: 7273566
    Abstract: Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced utilizing etching processes of the present invention are much less likely to be defective due to photoresist mask misalignment. Etchants used in processes of the present invention comprise a carrier gas, one or more C2+F gases, CH2F2, and a gas selected from the group consisting of CHF3, CF4, and mixtures thereof. The processes can be performed at power levels lower than what is currently utilized in the prior art.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: September 25, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Kei-Yu Ko
  • Patent number: 7160739
    Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d)calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: January 9, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Arulkumar P. Shanmugasundram, Alexander T. Schwarm, Gopalakrishna B. Prabhu
  • Patent number: 7160482
    Abstract: The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: January 9, 2007
    Assignees: IMEC vzw, Air Products and Chemicals, Inc.
    Inventors: Rita Vos, Paul Mertens, Albrecht Fester, Oliver Doll, Bernd Kolbesen
  • Patent number: 7115513
    Abstract: A method for forming uniform, sharply defined periodic regions of reversed polarization within a unidirectionally polarized ferroelectric material proceeds as a two-step process. First, alignment keys are formed on upper and lower planar surfaces of a unidirectionally polarized ferroelectric material by producing a spaced pair of alignment key shaped domain reversed regions and etching alignment key shaped notches in the upper and lower surfaces where the domain reversed regions intersect the surface planes. These notches, being vertically aligned between the upper and lower surfaces, are then used to align photomasks over a surface coating of photoresist formed directly on the material surface or on SiO2 layers coating the material surface.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: October 3, 2006
    Assignee: HC Photonics Corporation
    Inventors: Tsung Yuan Chiang, Tze-Chia Lin, Benny Sher, Ming-Hsien Chou
  • Patent number: 7060422
    Abstract: An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supercritical processing module are coupled to the transfer module. The robot is preferably located within the transfer module. In operation, the robot transfers a workpiece from the entrance of the transfer module to the supercritical processing module. After supercritical processing, the robot then transfers workpiece from the supercritical processing module to the non-supercritical processing module. After the non-supercritical processing, the robot returns the workpiece to the entrance of the transfer module. Alternatively, the non-supercritical processing is performed before the supercritical processing.
    Type: Grant
    Filed: January 15, 2003
    Date of Patent: June 13, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Maximilian Albert Biberger, Frederick Paul Layman, Thomas Robert Sutton
  • Patent number: 7005008
    Abstract: The invention relates to a reaction vessel (1) for producing a sample, in particular a crystal, from a substance in solution or in liquid form, having several reaction chambers (6) each forming a separate gas chamber, consisting of at least one housing part, and each reaction chamber (6) has a reservoir (7) and several reaction areas (8) co-operating therewith, connected to one another and to the reservoir (7) in order to exchange gas. The reservoirs and the reaction areas co-operating with them are disposed immediately adjacent to one another in rows, distributed in a predeterminable, identical manner, these rows running parallel with one another. Each row of reservoirs (7) therefore co-operates with at least one row of reaction areas (8).
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: February 28, 2006
    Assignees: Greiner Bio-One GmbH, Max-Planck-Gesellschaft zur Förderung der Wissenschaft e.V.
    Inventors: Günther Knebel, Lajos Nyársik, Holger Friedrich Heinrich Eickhoff, Hans Lehrach
  • Patent number: 7001457
    Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: February 21, 2006
    Assignee: Ricoh Company, Ltd.
    Inventors: Seiji Sarayama, Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki
  • Patent number: 6955741
    Abstract: The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means for moving the susceptor vertically between at least a first position and a second position, wafer-lift pins passing through the through-bores wherein the lower end of each wafer pin is attached to a lift member, and a lift member linked with an elevating mechanism for moving the wafer-lift pins vertically. The disclosed apparatus reduces contamination on the underside of the semiconductor wafer.
    Type: Grant
    Filed: August 7, 2002
    Date of Patent: October 18, 2005
    Assignee: ASM Japan K.K.
    Inventor: Takayuki Yamagishi
  • Patent number: 6949143
    Abstract: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as wall as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.
    Type: Grant
    Filed: December 15, 1999
    Date of Patent: September 27, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Kurita, Wendell T. Blonigan, Akihiro Hosokawa
  • Patent number: 6946167
    Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: September 20, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuto Hosoi, Toshiyasu Shirasuna, Kazuhiko Takada, Ryuji Okamura, Kazuyoshi Akiyama, Hitoshi Murayama
  • Patent number: 6932885
    Abstract: A vacuum processing device includes a driven body 122 provided inside a vacuum processing chamber 104, a driving means 126 provided outside the vacuum processing chamber 104 and a drive shaft 124 connecting the driven body 122 to the driving means 126. A first annular body 152 is secured to the drive shaft 124 and a second annular body 150 is rotatably supported by the first annular body 152. A bellows 148 that airtightly seals the periphery of the drive shaft 124 is provided so as to connect the second annular body 150 with the inner wall of the vacuum processing chamber 104. In this structure, the bellows 148 is allowed to move as one body with the drive shaft 124 during vertical motion of the drive shaft 124 but is made to stay in place during rotational motion of the drive shaft 124. Thus, the drive shaft, which engages in vertical motion and rotational motion, is airtightly sealed by the bellows.
    Type: Grant
    Filed: September 12, 2000
    Date of Patent: August 23, 2005
    Assignee: Tokyo Electron Limited
    Inventor: Hiroki Oka
  • Patent number: 6932873
    Abstract: A work-piece deflection management system including: (a) a first and a second vacuum chambers, each said vacuum chamber having an air-bearing seal circumscribing one of its sides, and (b) a work-piece plate; wherein the air-bearing seals are aligned to face one-another with the work-piece plate respectively there-between, allowing the work-piece to be laterally slid with respect to the air-bearing seals while maintaining a first predefined vacuum level within the first vacuum chamber and maintaining a second predefined vacuum level within the second vacuum chamber.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: August 23, 2005
    Assignee: Applied Materials Israel, Ltd.
    Inventors: Betsalel Tzvi Rechav, Jimmy Vishnipolsky, Efim Vinnitsky
  • Patent number: 6926798
    Abstract: An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supercritical processing module are coupled to the transfer module. The robot is preferably located within the transfer module. In operation, the robot transfers a workpiece from the entrance of the transfer module to the supercritical processing module. After supercritical processing, the robot then transfers workpiece from the supercritical processing module to the non-supercritical processing module. After the non-supercritical processing, the robot returns the workpiece to the entrance of the transfer module. Alternatively, the non-supercritical processing is performed before the supercritical processing.
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: August 9, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Maximilian Albert Biberger, Frederick Paul Layman, Thomas Robert Sutton
  • Patent number: 6921490
    Abstract: A method of forming an optical component includes forming a first mask on an optical component precursor. The first mask is formed with a plurality of waveguide portions extending from a common portion. Each waveguide portion is positioned so as to protect a waveguide region of the optical component precursor where a waveguide is to be formed. The method also includes forming a second mask between waveguide portions of the first mask. The resistance of the second mask to etching varies along at least one dimension of the second mask.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: July 26, 2005
    Assignee: Kotura, Inc.
    Inventors: Wei Qian, Dazeng Feng, Dawei Zheng, Joan Yiqiong Fong, Zhian Shao, Lih-Jou Chung, Xiaoming Yin
  • Patent number: 6916397
    Abstract: In a first aspect, a system includes (1) a chamber; (2) a variable speed vacuum pump coupled to the chamber; and (3) a pressure controller coupled to the chamber. The pressure controller compares a set point pressure with a pressure measurement for the chamber and adjusts a flow of gas through the pressure controller based on a difference between the pressure measurement and the set point pressure. The system includes a pressure measurement device coupled to the chamber and to the pressure controller, and a main controller coupled to the variable speed vacuum pump, the pressure controller and the pressure measurement device. The pressure measurement device measures a pressure within the chamber and provides a pressure measurement to the pressure controller and the main controller. The main controller (1) adjusts a speed of the variable speed vacuum pump; and (2) provides the set point pressure to the pressure controller.
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: July 12, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth Pfeiffer, Gregory S. Verdict
  • Patent number: 6913669
    Abstract: A retaining ring to be fitted on a chemical mechanical polishing apparatus for semiconductor wafers is disclosed, the retaining ring comprising a carrier ring made of a first material and having fitting elements for fitting the carrier ring on the polishing apparatus; and a bearing ring comprising a plastic material, arranged concentrically on the carrier ring, the bearing ring resting with a first front side on a polishing surface of the polishing apparatus and being held on its side axially opposed to the first front side releasably, non-rotatably, with a positive and/or frictional connection and without adhesive on the carrier ring; wherein the first material has a higher rigidity than the plastic material of the bearing ring.
    Type: Grant
    Filed: December 19, 2002
    Date of Patent: July 5, 2005
    Assignee: Ensinger Kunststofftechnologie GBR
    Inventor: Wilfried Ensinger
  • Patent number: 6908563
    Abstract: In order to provide a low-cost large substrate for full multi-bubble-jet head, a method for manufacturing an ink-jet head in which ink-discharge-pressure generation elements are provided on a substrate, discharge ports are disposed in a plate facing the ink-discharge-pressure generation elements, and ink is discharged from the discharge ports by generating bubbles within ink includes the steps of forming a threaded port, serving as an ink supply port, in a ceramic substrate, filling the threaded ports with a filler by melting the filler, flattening a portion of the threaded port filled with the filler in the substrate, depositing a silicon nitride film on the surface of the substrate in which the portion of the threaded port is flattened, depositing a layer made of a high-heat-conduction material on the silicon nitride film, forming the ink-discharge-pressure generation elements on the high-heat-conduction layer, forming ink discharge portions having the corresponding discharge ports on the substrate having t
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: June 21, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventor: Hiroyuki Tokunaga
  • Patent number: 6905615
    Abstract: A method of manufacturing a micromechanical component has the steps: providing a substrate having a front side and a back side; structuring the front side of the substrate; at least partially covering the structured front side of the substrate with a protective layer containing germanium; structuring the back of the substrate; and at least partially removing the protective layer containing germanium from the structured front side of the substrate.
    Type: Grant
    Filed: January 24, 2002
    Date of Patent: June 14, 2005
    Assignee: Robert Bosch GmbH
    Inventors: Frank Fischer, Wilhelm Frey, Udo Bischof, Lars Metzger
  • Patent number: 6905620
    Abstract: A method of fabricating a micro-electromechanical device includes the step of carrying out an integrated circuit fabrication process on a wafer to form control circuitry. Sacrificial material is deposited on the wafer. The sacrificial material is etched to form a deposition zone for a heater layer of a conductive material and contact regions for the heater layer to make electrical contact with the electrical power supply. The heater layer is deposited on the etched sacrificial material. The heater layer is etched so that the heater layer defines a heating circuit. A layer of a dielectric material is deposited on the heater layer. A bend compensator layer of the same material as the heater layer is deposited on the dielectric layer with substantially the same deposition characteristics as applied to the heater layer. The dielectric and bend compensator layers are etched to define the actuator arm. The sacrificial material is etched away.
    Type: Grant
    Filed: December 8, 2003
    Date of Patent: June 14, 2005
    Assignee: Silverbrook Research Pty Ltd
    Inventor: Kia Silverbrook