Abstract: A method of manufacturing a micromechanical component has the steps: providing a substrate having a front side and a back side; structuring the front side of the substrate; at least partially covering the structured front side of the substrate with a protective layer containing germanium; structuring the back of the substrate; and at least partially removing the protective layer containing germanium from the structured front side of the substrate.

Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

Abstract: An apparatus for processing substrates comprises a substrate handling chamber, including a substrate handling robot for transferring substrates from cassettes into a substrate carrier. A processing chamber is provided adjacent to the handling chamber, including one or more furnaces adapted to process a plurality of the substrates supported in the carrier. A weighing device is accessible to the substrate handler. The weighing device is adapted to weigh the substrates before and after processing the substrates in the processing chamber. The illustrated process is a curing anneal for a low k polymer previously deposited on the substrates.

Abstract: A process chamber for processing or inspecting a substrate such as a semiconductor wafer and the like includes a internal chamber employing dynamic seals at the interface of relatively moving elements. In one embodiment, the internal chamber has a first element, such as a lid or cover, and a second element, such as the body of the chamber. The first element and the second element meet at the interface. The internal chamber may further include a substrate support, mounted inside the internal chamber, supporting a substrate. A first movement system may produce at least one type of relative movement between the first element and the second element. A second movement system may produce second relative movement between the second element and the substrate support. The resulting structure allows movement of the chamber, while maintaining pressure inside the chamber.

Abstract: An article (e.g. a semiconductor wafer) is held in an article holder by means of a number of gas flows emitted from gas vortex chambers. Some of the gas flows act to cool an adjacent article portion more than the other gas flows. For example, some of the vortex chambers emit more gas per unit of time than the other chambers. More cooling is provided to those portions of the article which are heated more during processing. Greater temperature uniformity can be achieved.

Abstract: An apparatus for measuring ammonia gas concentration in an ongoing chemical mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components: a. A transferring means to collect a sample of the acidic CMP slurry; b. A converting means to convert the acidic CMP slurry to a basic slurry; c. A measuring means to measure the ammonia gas present in the basic slurry; d. A detection means to signal the end of an ongoing CMP cycle.

Abstract: A gas delivery device useful in material deposition processes executed during semiconductor device fabrication in a reaction chamber, including the gas delivery device of the present invention and a method for carrying out a material deposition process, including introducing process gas into a reaction chamber using the gas delivery device of the present invention. In each embodiment, the gas delivery device of the present invention includes a plurality of active diffusers and a plurality of gas delivery nozzles, which extend into the reaction chamber. Before entering the reaction chamber through one of the plurality of gas delivery nozzles, process gas must first pass through one of the plurality active diffusers. Each of the active diffusers is centrally controllable such that the rate at which process gas flows through each active diffuser is exactly controlled at all times throughout a given deposition process.

Abstract: A light modulator includes elongated elements arranged parallel to each other. In a first diffraction mode, the light modulator operates to diffract an incident light into at least two diffraction orders. In a second diffraction mode, the light modulator operates to diffract the incident light into a single diffraction order. Each of the elongated elements comprises a blaze profile, which preferably comprises a reflective stepped profile across a width of each of the elongated elements and which produces an effective blaze at a blaze angle. Alternatively, the blaze profile comprises a reflective surface angled at the blaze angle. Each of selected ones of the elongated elements comprise a first conductive element. The elongated elements produce the first diffraction when a first electrical bias is applied between the first conductive elements and a substrate.

Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes extending spaced etch stops into the substrate from the first side, etching into the substrate between the spaced etch stops, and etching into the substrate from the second side toward the first side to the spaced etch stops. Etching into the substrate between the spaced etch stops includes forming a first portion of the opening and etching into the substrate to the spaced etch stops includes forming a second portion of the opening.

Abstract: A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.

Abstract: An apparatus for processing particulate dust when a substrate is arranged in a high vacuum enclosure, plasma is generated in the high vacuum enclosure, and a reactive material is introduced into the high vacuum enclosure to perform processing of the substrate. At least one collecting electrode is provided around the substrate in the high vacuum enclosure other than the electrode that generates plasma, and particulates generated in plasma are efficiently removed by applying a predetermined electric potential of a direct-current or an alternating current to the collecting electrode, and thus a deposition problem onto an inner wall of the vacuum enclosure and a deterioration problem of processing accuracy and a film quality associated with flowing of the particulates onto the substrate are solved.

Abstract: A mask has a monocrystal substrate having opposite surfaces which are planes having Miller indices {110}. A plurality of penetrating holes are formed in the monocrystal substrate. An opening shape of each of the penetrating holes is a polygon and each side of the polygon is parallel with a plane in a group of the {111} planes. The wall surfaces of the penetrating holes are the {111} planes. In the method of manufacturing a mask, openings are formed in the etching resistant film corresponding to the shape of the penetrating holes and the monocrystal substrate is etched.

Abstract: Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. Self-centering mechanisms are provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

Abstract: A method of manufacturing a PCB comprising the steps of: forming through-holes in a substrate having releasing layers on front and back faces; filling conductive paste in the through-holes; removing the releasing layers and disposing metal foil on both faces of the substrate; and heat pressing them. A diameter of the through-holes is larger than that of corresponding holes formed on the releasing layers. According to the present invention, when the conductive paste is compressed, conductive paste protruding from the surface of the substrate is trapped at the edges of the through-holes. This configuration prevents short circuits with undesirable wiring patterns. So, an enough amount of the conductive paste can protrude from the surface of the substrate. Therefore, after the compression, stable electric connections inside the conductive paste and between the conductive paste and the metal foils are ensured, thus PCBs with superior reliability can be produced.

Abstract: A substrate holding apparatus comprises a substrate holder body having a substrate holding side facing a polishing surface and holding a substrate on the substrate holding side and a retainer ring fixedly secured to the substrate holder body. The retainer ring is arranged to surround an outer periphery of the substrate held by the substrate holder body so that the retainer ring engages with the polishing surface radially outside the substrate as the polishing of the substrate is effected. The substrate holder body is provided with a membrane having inside and outside surfaces. The inside surface cooperates with a surface of the substrate holder body to define a fluid pressure chamber to which a fluid pressure is applied. The outer surface engages with the substrate held by the substrate holder body.

Abstract: A system and method for making an optical quality silicon surface on optical systems, including integrated optical waveguide device structures, is provided. A rough surface is formed through a dry etching process. Thermal oxide is grown on the surface either by a wet or dry oxidation process. A HF based solution is used to etch the grown oxide, reducing the surface roughness. The process may be performed repeatedly in order to obtain the desired amount of smoothness.

Abstract: A vacuum plate for a fabricating apparatus of a semiconductor device, the vacuum plate includes: a first vacuum panel having a plurality of exhaust holes, the plurality of exhaust holes having same area and same distance from a center of the first vacuum panel, the plurality of exhaust holes being symmetrical and spaced apart from each other; and a second vacuum panel having a sidewall, a pumping hole and an air-load block, the sidewall being vertically protruded along an edge of the second vacuum panel, the air-load block being vertically protruded and symmetrical, a bottom surface of the first vacuum panel contacting a top surface of the sidewall and a top surface of the air-load block, thereby the first and second vacuum panels being combined.

Abstract: A ceramic heater improving a uniformity of temperature distribution in a work heating face, wherein a resistance heating body formed on a face of a ceramic substrate opposite to the work heating face thereof is such that the scattering of thickness is within ±50% of an average thickness, and a surface roughness of the resistance heating body is a range of 0.05-100 ?m as Rmax and not more than 50% of the average thickness.