Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: An acoustic ink printing print head utilizing metal alloy 42 is disclosed. Additionally, a process for incorporating the metal alloy 42 (alloy with approximately 42% nickel and 58% iron) to build the liquid level control/aperture plate defining an AIP print head is disclosed. The process consists of fabricating a channel plate and an aperture plate from the metal alloy 42 and bonding the two structures together thereby defining the liquid level control/aperture plate.

Abstract: Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.

Abstract: A system detects the clearing of a dielectric at a plurality of contact sites by measuring the surface voltage of the dielectric and comparing the surface voltage to a reference voltage set to a value that relates to the cleared contact sites. Another system detects the clearing of a dielectric at a plurality of contact sites on a substrate by measuring the rate of change of a substrate current during an etch process and ending the etch process when the rate of change is approximately zero. Another system detects the clearing of a dielectric at a contact site by measuring a substrate current during an etch process and ends the etch process when the measured substrate current exceeds a predetermined value.

Abstract: A device for scouring a coating from a fibrous material includes a tank for immersing a plurality of fibers in scouring solvent therein. The device also includes a bubbling device positioned therein and having a chamber formed between a base plate and a cover plate with a plurality of holes. The plurality of fibers is mounted within the tank above the cover plate and holes of the bubbling device, so that gas bubbles produced thereby move through the scouring solvent and through the plurality of fibers. The holes are arranged in a pattern on the cover plate that corresponds to a shape assumed by the plurality of fibers when mounted within the tank. A process for scouring a coating from a fibrous material is also disclosed and involves immersing a plurality of fibers in a scouring solvent and producing a plurality of gas bubbles that move through the solvent and the plurality of fibers.

Abstract: A resistive etching solution containing thiourea, which is particularly suitable for etching an electrically resistive material comprised of a nickel-chromium alloy. The resistive etching solution allows for fast and effective etching of a nickel-chromium alloy in cases where the ratio of (a) copper surface area to (b) nickel/chromium surface area, is relatively large, and where fine feature etching is desired.

Abstract: With respect to any one of processing units, a main transportation path, a developing unit, a dedicated transportation robot and a high-pressure processing unit are disposed linearly in this order in a direction. Hence, even if a processing fluid adhering to a substrate or an evaporant of the processing fluid moves toward the main transportation path while the high-pressure processing unit transports the substrate wet with the processing fluid, there are the processing units located which the processing fluid or its evaporant must arrive at before reaching the main transportation path.

Abstract: A method for manufacturing reflective spatial light modulator mirror devices is disclosed. In the method, a portion of a mirror layer and a first sacrificial layer beneath the portion of the mirror layer are removed simultaneously to expose the substrate while defining a pattern of the mirror layer. Then, a second sacrificial layer is deposited conformally, and substrate contact openings and a mirror layer contact opening are defined in the second sacrificial layer at the same time. Subsequently, a support material layer is deposited conformally and etched back, so as to form supporting posts of the mirror layer in the substrate contact openings. Before the support material layer is etched back, the substrate contact openings can be filled with a photoresist material first, so as to maintain the support material layer in the substrate contact openings and increase the structural intensity of the supporting posts.

Abstract: A method and apparatus are provided for reworking of finishing metallurgy on pads of electronic components. The pads are copper or copper/nickel and have a layer of nickel thereon and an overlying layer of gold. The gold layer is removed first followed by the nickel layer and then the component is treated to remove etch and corrosion products. Media blasting is then used to restore the pads to their original condition as on prime parts. The pads are then replated using conventional nickel and gold plating solutions to form the reworked component.

Abstract: A film-forming device with a substrate rotating mechanism includes a susceptor 30 in the form of a circular disk; a base plate 6 positioned below the susceptor 30 and rotatably retaining the susceptor 30; a revolution generating section 5 rotating the susceptor 30 at the outer periphery of the susceptor 30; a plurality of substrate tray retaining sections 23 arranged on the susceptor 30; a plurality of annular substrate trays 20 rotatably supported in the corresponding substrate tray retaining sections 23; a rotation generating section 4 rotating the substrate trays 20; and a plurality of substrates W retained in the substrate trays 20. The substrates W are revolved by the rotation of the susceptor 30 and rotated by the rotation of the substrate trays 20 to apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating section 5 and the rotation generating section 4.

Abstract: Optical switch comprising optical means (120) and driving means (114, 115, 124) on a substrate (100), cooperating with optical means to make them pivot between a rest position and at least one active position. According to the invention, the switch comprises first mobile stop means (122), rigidly fixed to the optical means (120, 130) so that they can pivot with the optical means, and second fixed stop means (128) arranged in a plane approximately parallel to the main face (110) of the substrate and cooperating with the first stop means, to fix the said active position of the optical means. Application to make an optical cross connect.

Abstract: In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged from different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component can be made entirely of the cerium oxide containing ceramic material or, alternatively, the cerium oxide containing ceramic can be provided as a layer on a substrate such as aluminum or an aluminum alloy, a ceramic material, stainless steel, or a refractory metal. The cerium oxide containing ceramic layer can be provided as a coating by a technique such as plasma spraying. One or more intermediate layers may be provided between the component and the cerium oxide containing ceramic coating.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: A substrate receiving apparatus and a method thereof that prevents substrate damage from occurring when a substrate is loaded/unloaded on/from a cassette. The present invention includes a cassette having a plurality of plates inside so as to receive a plurality of substrates; a cassette loading unit uploading/downloading the cassette; a port supporting the cassette loading unit; and a plurality of auxiliary plates inserted inside the cassette from outside. The method includes downloading a cassette so as to move substrates from plates of the cassette to auxiliary plates, unloading and loading the substrates placed on the auxiliary plates from/on the cassette, and uploading the cassette so as to move the substrates from the auxiliary plates to the plates of the cassette.

Abstract: One embodiment of the present invention provides a system that facilitates construction of electromagnetic, optical, chemical, and mechanical systems using chemical endpoint detection. The system operates by receiving a system description that specifies multiple components, including a first component and a second component. The system fabricates the first component and the second component using selected construction materials. The system also creates a first interconnection structure on the first component and a second interconnection structure on the second component. These interconnection structures can be created using a sacrificial layer and chemical endpoint detection. Next, the system brings the first component and the second component together by connecting the first interconnection structure and the second interconnection structure. These interconnection structures align the first component to the second component so that accurate alignment can be achieved.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.