Abstract: There is provided a method and apparatus for etching a ruthenium film which can sufficiently etch away a ruthenium film formed on or adhering to the peripheral region, especially a no-device-formed region, backside or other portions of a substrate. The method comprises etching a ruthenium film formed on a substrate with a chemical liquid having a pH of not less than 12 and an oxidation-reduction potential of not less than 300 mVvsSHE.

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: There is provided a magnetoresistance effect element which is capable of causing a large sense current to flow between electrodes and which has a smaller dispersion in direction of magnetization of a CPP element based on a magnetic field due to the sense current and has a lager reproducing output, and a method for producing the same. The magnetoresistance effect element is produced by: after forming a first electrode, forming a magnetoresistance effect film on the first electrode; applying a self-condensing organic resist on the magnetoresistance effect film, and thereafter, causing the organic resist to be droplets; subsequently, forming an insulating film thereon, and thereafter, removing the organic resist to form a groove portion in the insulating film to expose the top surface of the magnetoresistance effect film; and filling the groove portion with an electrode material to form a second electrode.

Abstract: The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators positioned outside of the chamber.

Abstract: Provided is a method and apparatus for controlling a bias voltage over a wide range and for de-coupling dual radio frequency (RF) currents to allow for independent control of plasma density and ion energy of a plasma for processing a substrate. An exemplary apparatus provides a plasma processing chamber which includes a bottom electrode configured to hold a substrate and first and second RF power supplies being connected to the bottom electrode. Also included is a top electrode which is electrically isolated from a top ground extension. A filter array defining a set of filter settings is included. A switch is coupled to the top electrode and the switch is configured to interconnect the top electrode to one of the filter settings. The filter settings are configured to enable or disable RF current generated from one or both of the RF power supplies from passing through the top electrode.

Abstract: A nozzle body and assembly for delivering atomized fuel to a combustion chamber. The nozzle body is rotatably mounted onto a substrate. One or more curvilinear fuel delivery channels are in flow communication with an internal fuel distribution cavity formed in the nozzle body. Passage of pressurized fuel through the nozzle body causes the nozzle body to rotate. Components of the nozzle assembly are formed of silicon carbide having surfaces etched by deep reactive ion etching utilizing MEMS technology. A fuel premix chamber is carried on the substrate in flow communication with a supply passage in the nozzle body.

Abstract: An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.

Abstract: Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146).

Abstract: In order to ensure uniform coating of workpieces, workpiece holders carrying said workpieces are rotatably mounted at the edge of a turntable, a plurality of which are fastened in succession at adjustable distances to a drivable shaft. In order to trigger intermittent rotations of the workpiece holders, a driver finger of a driving device engages in each case a drive wheel thereof on each revolution of the turntable, so that the workpiece holders are rotated relative to the turntable through a specific angle in a direction opposite to the direction of rotation of said turntable. In order that no readjustment of the driver finger is required, for example in the case of a change of distances between the turntables, said driver finger is fastened to an extension of a rotating ring, which is mounted on the turntable itself so as to be non-displaceable in the direction of the shaft but rotatable about said shaft.

Abstract: A method for fabricating an electrically isolated MEMS device having an outer stationary MEMS element and an inner movable MEMS element is provided that does not use a sacrificial layer. Rather, a pair of spacers are defined on the outer portions of the upper surface of a conductive wafer, and an insulating material is deposited thereon. The spacers are attached to a substrate to define an internal void therein. The wafer is then patterned to form the outer MEMS element as well as a conductive member for the inner MEMS element, separated from the outer MEMS element by a gap. A portion of the insulating layer that is disposed in the gap is then removed, thereby releasing the inner MEMS element from the stationary MEMS element.

Abstract: A plasma processing unit of the invention includes: a processing container, and a first electrode disposed in the processing container. The first electrode has: a plurality of gas-dispersion holes for supplying a process gas into the processing container, and an opening for a measurement light. A second electrode is arranged on one side of and a predetermined gap away from the gas-dispersion holes and the opening of the first electrode. A power source unit applies electric power between the first electrode and the second electrode and generates plasma between the first electrode and the second electrode. An optical path of a window member adjacently communicates with the other side of the opening for the measurement light. The gas-dispersion holes are formed into a predetermined arrangement, and the opening is formed separately from the gas-dispersion holes without disturbing the arrangement of the gas-dispersion holes.

Abstract: A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.

Abstract: A wear resistance coated bell atomizer (32) and method for making same. The coating applied to the outer surface of a bell cup (36) of the bell atomizer (32) is preferably a silicon-doped amorphous carbon coating. This silicon-doped amorphous carbon coating significantly increases the usable life of a bell cup (36) in a bell atomizer paint system (10) by limiting the effects of abrasive materials on the wearable surfaces of the bell cup (36), including the top serrated edges (46), which may negatively affect the performance of uncoated bell atomizer spray equipment.

Abstract: A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

Abstract: A wet etch system including a process tank having an inner etch bath chamber and an outer overflow chamber surrounding the etch bath chamber. A frame which is removably mounted on the process tank defines a diversion channel between the upper ends of the etch bath chamber and overflow chamber. The etch bath chamber receives a wafer-containing cassette, which displaces etchant from the etch bath chamber, through the diversion channel and into the overflow chamber, where the etchant is drained from the process tank. Particulate impurities leave the etch bath chamber, enter the overflow chamber and drain from the process tank with the overflow etchant. Fresh etchant is poured into the etch bath chamber prior to a subsequent etch cycle. A water spray loop may be provided in the overflow chamber for removing etch particles from the interior wall surfaces of the overflow chamber.

Abstract: An invention is provided for a CMP apparatus that enhances removal rate uniformity. The CMP apparatus includes a polishing belt disposed below a carrier head that is capable of applying a wafer to the polishing belt. Also included is a platen disposed below the polishing belt. The platen includes a circular shim section disposed on the top surface of the platen. The circular shim section is higher than the top surface of the platen. When using this configuration, increasing pressure to the backside of the polishing belt decreases the edge removal rate of the wafer. Conversely, decreasing pressure to the backside of the polishing belt increases the edge removal rate of the wafer.

Abstract: The present invention provides a hard polishing pad consisting of a non-foam material which is used in a CMP apparatus. Hard polishing pads consisting of foam resins show good pattern step difference elimination, but tend to cause scratching of the wafer. Furthermore, the polishing rate tends to be lower than that of polishing pads consisting of foam polyurethane. In the polishing pad of the present invention, spiral grooves or concentric circular grooves and lattice-form grooves are combined in the surface of the polishing pad; furthermore, the angles of intersection of the grooves are set at less than 2 degrees, and there are no edge parts with a curvature radius of 50 nm or less in the surface of the polishing pad. Accordingly, since there is no generation of flash, the object of polishing is not scratched, and the polishing rate can be increased.

Abstract: A method and apparatus for analyzing a semiconductor surface obtains a sample from a localized section of a wafer. The sample is obtained by isolating a section of a wafer with a sampling apparatus, dispensing liquid onto the isolated section of the wafer, dissolving compounds of interest in the liquid, removing a portion of the liquid, and analyzing the liquid and dissolved compounds of interest. The liquid can be an etching solution, an organic solvent, or other suitable solvent. Samples and analyses can, thus, be obtained as a function of position on the wafer. Analyses as a function of depth can also be determined by sampling and analyzing an isolated portion of the wafer as a function of time.

Abstract: An apparatus for assessing a silicon dioxide content of a phosphoric acid bath for etching silicon nitride and a system for etching silicon nitride bath utilize a sensor. In particular, the apparatus for assessing the silicon dioxide content of a phosphoric acid bath for etching silicon nitride of the present invention contains a sensor for measuring the NH3 concentration of the phosphoric acid bath, a storage unit for storing data which define a relationship between the silicon dioxide content and the NH3 concentration, and a device for calculating the silicon dioxide content of the basis of the measured NH3 concentration and the stored data.

Abstract: A deposition chamber is formed in a housing that has a substrate carrier on the interior. The substrate carrier is rotatable about a central axis, and a particle deposition head is mounted in the chamber on a support that can be moved linearly along lines that are substantially radial to the central axis of the substrate carrier. The deposition head thus can be moved to different radial positions of a substrate carried on the substrate carrier as the carrier rotates during deposition from the head to provide for a wide variety of deposition patterns on the substrate. The deposition head has a pair of aerosol discharge openings, one being the end of a substantially tubular central passageway and the other being the end of an annular passageway that surrounds the central tubular passageway.