Abstract: An address and command port interface selectively enables JTAG TAP domain operations and Trace domain operations within an IC. The port carries TMS and TDI input and TDO output on a single pin and receives a clock signal on a separate pin. The addressable two pin interface loads and updates instructions and data to the TAP domain within the IC. The instruction or data update operations in multiple ICs occur simultaneously. A process transmits data from an addressed target device to a controller using data frames, each data frame comprising a header bit and data bits. The logic level of the header bit is used to start, continue, and stop the data transmission to the controller. A data and clock signal interface between a controller and multiple target devices provides for each target device to be individually addressed and commanded to perform a JTAG or Trace operation.

Abstract: A processing-in-memory (PIM) device includes an CRC logic circuit configured to generate write data and a write fail check signal from write input data when a write operation in an operation mode is performed, and generate a fail flag signal and converted data from read data and a read fail check signal when a read operation in the operation mode is performed; and a MAC operator configured to perform a MAC arithmetic operation for the converted data and buffer data, based on the fail flag signal to generate MAC operation result data.

Abstract: A solution is proposed for error processing, wherein n byte error positions of n byte errors are predefined (where n is a positive integer), wherein this involves determining whether there is a further byte error position on the basis of the n byte error positions and on the basis of n+1 error syndrome components of a first error code.

Abstract: The Fleetwide Adaptive Rate Limiting Gatekeeper Apparatuses, Processes and Systems (“FARLG”) transforms API call permission request, API call result request datastructure/inputs via FARLG components into API call permission response, API call result response outputs. An API call permission request datastructure associated with an API call of an application structured to identify an API and a set of scopes is obtained. A retry-after interval is determined for each scope in the set of scopes, in which existence of a retry-after interval for a scope indicates that the API previously returned a throttled response for the scope. A wait duration associated with the API call is determined as the maximum retry-after interval across retry-after intervals that exist for the set of scopes. An API call permission response datastructure structured to specify the wait duration is provided.

Abstract: Methods, systems, and devices for internal error correction for memory devices are described. A memory device may perform a read operation at a memory array having a data partition and an error check partition and may obtain a first set of bits from the data partition and a second set of bits from the error check partition. The memory device may determine a first error detection result based on a value of a determined syndrome. The memory device may obtain a parity bit from the first set of bits and determine a second error detection result based on a comparison of the parity bit with a second function of the subset of the first set of bits. The memory device may transmit the first set of bits to a host device based at least in part on the first and second error detection results.

Abstract: Separate inter-die connectors for data and error correction information and related apparatuses, methods, and computing systems are disclosed. An apparatus including a master die, a target die, inter-die data connectors, and inter-die error correction connectors. The target die includes data storage elements. The inter-die data connectors electrically couple the master die to the target die. The inter-die data connectors are configured to conduct write data bits from the master die to the target die. The write data bits are written to the data storage elements. The inter-die error correction connectors electrically couple the master die to the target die. The inter-die error correction connectors are configured to conduct error correction information corresponding to the write data bits from the master die to the target die. The target die includes error correction circuitry configured to generate new error correction information responsive to the write data bits received from the master die.

Abstract: Methods, systems, and devices for error status determination at a memory device are described. A memory device may generate, based on syndrome bits for a codeword read from a memory, an error detection signal for the codeword that indicates whether an error has been detected in the codeword. The memory device may generate, based on the syndrome bits, an error correction signal for the codeword that indicates whether an error has been corrected in the codeword. And the memory device may provide an indication of the error detection signal and an indication of the error correction signal to a host device.

Abstract: Systems and methods for operating one or more qubits in a quantum computing system are provided. In some examples, a method can include obtaining past time data associated with a temporal metric of an operating parameter of a qubit in a quantum device. The method can include selecting an operating parameter value based at least in part on the past time data associated with the temporal metric of the operating parameter to reduce likelihood of occurrence of a time dependent defect. The time dependent defect can exhibit a time dependent behavior. The method can include operating the qubit in the quantum device at the operating parameter value.

Abstract: A memory component internally generates and stores the check bits of error detect and correct code (EDC). In a first mode, during a read transaction, the check bits are sent to the memory controller along with the data on the data mask (DM) signal lines. In a second mode, an unmasked write transaction is defined where the check bits are sent to the memory component on the data mask signal lines. In a third mode, a masked write transaction is defined where at least a portion of the check bits are sent from the memory controller on the data signal lines coincident with an asserted data mask signal line. By sending the check bits along with the data, the EDC code can be used to detect and correct errors that occur between the memory component and the memory controller.

Abstract: A storage network operates by: receiving a encoded data slice for storage by the storage network, wherein the encoded data slice is associated with a vault; generating a encryption key corresponding to the encoded data slice based on a vault identifier associated with the vault; utilizing the encryption key to generate a encrypted data slice and that corresponds to, and is based on, the encoded data slice; storing the encrypted data slice in a storage unit of the storage network; receiving a request to retrieve the encoded data slice; retrieving the encrypted data slice corresponding to the encoded data slice from the storage unit of the storage network; generating a decryption key corresponding to the encoded data slice based on the vault identifier, wherein the decryption key is different from the encryption key; and regenerating the encoded data slice using the decryption key.

Abstract: Error correcting memory systems and methods of operating the memory systems are disclosed. In some embodiments, a memory system includes: a data memory; an ECC memory; and a data scrubbing circuit electrically coupled to the ECC memory and the data memory. The data scrubbing circuit may be configured to, in response to receiving a scrub data command, correct an error in the data memory. A code word length used to correct the error may be longer than a word length used during normal access of the data memory. In some embodiments, a memory system includes a first memory circuit associated with a first bit error rate and a second memory circuit associated with a second bit error rate. In some embodiments, a memory system includes an error correctable multi-level cell (MLC) array.

Abstract: According to one general aspect, an apparatus may include a host interface circuit configured to receive offloading instructions from a host processing device, wherein the offloading instructions instruct the apparatus to compute an error correction code associated with a plurality of data elements. The apparatus may include a memory interface circuit configured to receive the plurality of data elements. The apparatus may include a plurality of memory buffer circuits configured to temporarily store the plurality of data elements. The apparatus may include a plurality of error code computation circuits configured to, at least in part, compute the error correction code without additional processing by the host processing device.

Abstract: Aspects of this technical solution can include selecting a plurality of memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second page including a second plurality of bits, modifying, based on the first plurality of bits and the second plurality of bits, a first voltage threshold corresponding to an estimated read voltage for the first plurality of bits, allocating, to a voltage range bounded by the first voltage threshold, a log-likelihood ratio (LLR), and decoding, based on the LLR corresponding to the voltage range, the first plurality of bits.

Abstract: Provided are a solid state drive processing method, system, device, and a non-transitory readable storage medium. The method includes: determining a target data page that is being processed when a target solid-state drive is abnormally powered down; using a next data page of the target data page as a current data page; deciding whether a read-write error exists in the current data page; in response to deciding that a read-write error exists in the current data page, using a next data page of the current data page as the current data page, and returning to execute the deciding whether a read-write error exists in the current data page; and in response to deciding that no read-write error exists in the current data page, storing target data since the next data page of the current data page.

Abstract: A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

Abstract: A read voltage calibration method, a memory storage device, and a memory control circuit unit are provided. The read voltage calibration method includes: reading data from a first physical unit by using multiple read voltage levels; decoding the data to obtain multiple error evaluation parameters; determining a first vector distance parameter according to a first error evaluation parameter; determining multiple candidate read voltage levels according to the first vector distance parameter and a first read voltage level; determining a target read voltage level according to one of the candidate read voltage levels; and reading the data again from the first physical unit by using the target read voltage level.

Abstract: Example channel circuits, data storage devices, and methods for using an adjustable code rate based on an extendable parity code matrix are described. Data units may be read from a storage medium. Multiple sets of parity bits may be available for different data units, different sets of parity bits having a different number of parity bits corresponding to different parity matrices and desired code rates. A primary parity matrix may provide a base code rate and one or more extended parity matrices may provide increased code rates based on additional rows for increased decoding. Error correction code (ECC) decoding may be selectively performed based on the different sets of parity bits and corresponding parity matrices, resulting in the output of a decoded data units based on the data units from the read signal.

Abstract: A terminal according to one aspect of the present disclosure includes: a receiving section that receives information related to a channel state information reference signal (CSI-RS) of a terminal according to an old release; and a control section that performs control of applying rate match or puncture to a specific channel or signal regarding a resource of the CSI-RS of the terminal according to the old release. According to one aspect of the present disclosure, even when there are terminals according to different releases, each of the terminals can appropriately perform communication.

Abstract: Methods, systems, and devices for spare substitution in a memory system are described. A controller may, as part of a background operation, assign a spare bit to replace a bit of a code word and save an indication of the spare bit assignment in a memory array. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) within a memory medium that retains the code word. An MSR corresponding to the bit to be replaced may include a quantity of erroneous bits relative to a threshold. The controller may, during a read operation, identify the spare bit in a first portion of the code word, determine the bit to be replaced based on accessing the memory array, and replace the bit with the spare bit concurrently with receiving a second portion of the code word.

Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.