Abstract: An inter-die double data rate (DDR) data transfer scheme is provided. In particular, the data transfer scheme utilizes an error correction code (ECC) encoding scheme that exploits the DDR property that a single microbump defect can only yield four possible error scenarios. A specialized single error correcting, double error detecting, and double adjacent error correcting (SEC-DED-DAEC) encoding scheme that imposes at least four parity check matrix constraints may be used. Configured and operated in this way, a fewer number of parity check bits are required to detect data bit errors associated with a single defective microbump.

Abstract: A controller of a solid state drive (SSD) device, in response to determining that the SSD device is to transition to a power saving mode: transfers information from at least some of a volatile memory of an SSD device controller of the SSD device to a host memory of a host computer via a communication interface; and transitions the at least some of the volatile memory to an OFF state to reduce power consumption of the SSD device. In response to determining that the SSD device is to transition from the power saving mode to a normal operating mode, the controller also: transitions the at least some of the volatile memory to an ON state in which the at least some of the volatile memory is configured to retain data; and transfers the information from the host memory to the volatile memory of the SSD device controller via the communication interface.

Abstract: The present disclosure relates to a circuit for testing a random number generator adapted to delivering a series of random bits and comprising at least one test unit configured to detect a defect in the series of random bits, said test circuit being adapted to verifying whether, after the detection of a first defect by the test unit, the number of random bits, generated by the random number generator without the detection of a second defect by said unit test, is smaller than a first threshold.

Abstract: A method for decoding user data by an apparatus in a wireless network is provided. The method includes receiving, by the apparatus, user data associated with a plurality of network parameters. The method includes training, by the apparatus, a neural network using the plurality of received network parameters. Further, the method includes computing, by the apparatus, a Log Likelihood Ratio (LLR) using the trained neural network. Further, the method includes decoding, by the apparatus, the received user data using the computed LLR.

Abstract: A system includes a processor and a memory set coupled to the processor. The system also includes a repair circuit coupled to the memory set. The repair circuit includes a first repair circuit and a second repair circuit. The repair circuit also includes a test controller configured to select between the first repair circuit and the second repair circuit to perform an in-field self-repair of the memory set.

Abstract: Methods, systems, and devices for memory operations are described. A first code for detecting one or more errors in a first set of bits of data and a second code for detecting one or more errors in a second set of bits of data may be generated. The first set of bits and the second set of bits may be transmitted over a channel between a memory device and a host device in an interleaved pattern. The first code and the second code may also be transmitted over the channel. The first set of bits and the second set of bits may be deinterleaved by the receiving device. The first set of bits and the second set of bits may also be processed by the receiving device using the first code and the second code.

Abstract: Apparatuses, systems, and techniques to compute cyclic redundancy checks use a graphics processing unit (GPU) to compute cyclic redundancy checks. For example, in at least one embodiment, an input data sequence is distributed among GPU threads for parallel calculation of an overall CRC value for the input data sequence according to various novel techniques described herein.

Abstract: An electronic system test method, comprising: (a) inputting a victim test pattern to a victim signal path of a target electronic system and simultaneously inputting at least one aggressor test pattern to at least one aggressor signal path of the target electronic system, according to a major set of test patterns comprising a plurality of minor set of test patterns; (b) acquiring a output response corresponding to the step (a); and (c) after changing the victim test pattern or the aggressor test pattern, and after repeating the step (a) and the step (b) until all of the major test patterns set are used thereby acquiring a plurality of the output responses, determining a combination level according to the output responses. The victim test pattern is an X bit pattern and the aggressor test pattern is a Y bit pattern, X and Y are positive integers larger than or equal to 3.

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion, wherein the write counter is a global counter indicating a number of write operations to the memory device. The operations performed by the processing device further include determining that a set of failed bit count statistics corresponding to a plurality of codewords of a memory unit satisfies a second threshold criterion. The operations performed by the processing device further include, responsive to determining that the set of failed bit count statistics corresponding to the plurality of codewords of the memory unit satisfies the second threshold criterion, performing a write scrub operation on the memory unit.

Abstract: A data storage circuit includes memory, an error correcting code (ECC) storage circuit, and control circuitry. The memory is configured to store a data value comprising a plurality of fields. Each of the fields is independently writable. The ECC storage circuit is configured to store an ECC value corresponding to the data value. The control circuitry is configured to receive a field value to be written into one of the fields, and store the field value in the one of the fields by writing only the field value to the memory. The control circuitry is also configured to retrieve the ECC value from the ECC storage circuit, compute an updated ECC value based on the ECC value retrieved from the ECC storage circuit and the field value, and store the updated ECC value in the ECC storage circuit.

Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and a power management component, operatively coupled with the memory array. The power management component sends a test value to one or more other power management components on one or more other memory dies of the plurality of memory dies and receives one or more other test values from the one or more other power management components. The power management component compares the test value and the one or more other test values to a set of expected values, and responsive to the test value and the one or more other test values matching the set of expected values, determines that signal connections between the power management component and the one or more other power management components are functional.

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing error correction coding in memory systems are provided. In one aspect, a memory system includes a system controller configured to communicate with a host device, and a memory device coupled to the system controller. The memory device includes at least one memory and a memory controller coupled to the at least one memory. The memory controller includes an error correction code (ECC) circuit configured to perform error correction coding for data received from at least one of the system controller or the at least one memory.

Abstract: A method includes determining, by a processing device, a value of a memory endurance state metric associated with a segment of a memory device in a memory sub-system; determining a target value of a code rate based on the value of the memory endurance state metric, and adjusting the code rate of the memory device according to the target value, wherein the code rate reflects a ratio of a number of memory units designated for storing host-originated data to a total number of memory units designated for storing the host-originated data and error correction metadata.

Abstract: A transmission station (STA) of a wireless local area network system, according to various embodiments, may receive information related to the length of a codeword from a reception STA. On the basis of the information related to the length of the codeword, the transmission STA sets the codeword to be retransmitted and transmits same.

Abstract: A graphics processing system for operation with a data store, comprising: one or more processing units for processing tasks; a check unit operable to form a signature which is characteristic of an output from processing a task on a processing unit; and a fault detection unit operable to compare signatures formed at the check unit; wherein the graphics processing system is operable to process each task first and second times at the one or more processing units so as to, respectively, generate first and second processed outputs, the graphics processing system being configured to: write out the first processed output to the data store; read back the first processed output from the data store and form at the check unit a first signature which is characteristic of the first processed output as read back from the data store; form at the check unit a second signature which is characteristic of the second processed output; compare the first and second signatures at the fault detection unit; and raise a fault signal i

Abstract: According to a certain embodiment, the semiconductor device includes: an integrated circuit unit; a command control unit configured to execute command control for the integrated circuit unit on the basis of a command, an address, and/or data, each supplied from an outside; an internal state control unit configured to detect an operating state inside the integrated circuit unit, and to provide an internal state signal indicating a first state or a second state in accordance with the detected operating state; and an instruction rejection control unit configured to instruct the internal state control unit to compulsorily turn the internal state signal to the first state if an operation of the integrated circuit unit has not been completed even after a predetermined maximum monitoring time has elapsed, and to instructs the command control unit to reject an input/output operation of the command, the address, and/or the data.

Abstract: Methods, systems, and devices for a dynamic parity scheme are described. A memory system may include a memory device with multiple blocks of memory cells, where each block includes a first quantity of pages of memory cells storing data and a second quantity of pages of memory cells storing parity information associated with the data. In some cases, the memory system may increase the quantity of pages in a block of memory cells storing parity information to improve a reliability of the data stored in the block of memory cells. For example, the memory system may increase the quantity of pages storing parity information at the block of memory cells after performing a threshold quantity of access operations at the block of memory cells or in response to detecting more than a threshold quantity of errors in data stored at the block of memory cells.

Abstract: A memory system includes a nonvolatile memory which comprises a plurality of memory cells capable of storing 4-bit data represented by first to fourth bits by sixteen threshold regions, and a memory controller configured to cause the nonvolatile memory to execute a first program for writing data of the first bit, the second bit, and the fourth bit and then causes the nonvolatile memory to execute a second program for writing data of the third bit. In fifteen boundaries existing between adjacent threshold regions among the first to sixteenth threshold regions, a maximum value of the number of first boundaries used for determining a value of the data of the first bit, the number of second boundaries used for determining a value of the data of the second bit, the number of third boundaries used for determining a value of the data of the third bit.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising performing a first read operation on the memory device to retrieve first data; determining, from the first data, second data indicative of a write temperature associated with the first data, wherein the write temperature is indicative of a temperature measured during a write operation; determining a read voltage value based on the second data; and performing a second read operation on the memory device using the read voltage value to obtain the first data.

Abstract: Exemplary methods, apparatuses, and systems include a media temperature manager receiving operating temperature measurements for a memory subsystem. The media temperature manager generates an average temperature using the operating temperature measurements. The media temperature manager determines that the average temperature satisfies a first value for a dynamic temperature threshold. The dynamic temperature threshold indicates a temperature at which the memory subsystem throttles media operations. The media temperature manager increases the dynamic temperature threshold to a second value in response to the average temperature satisfying the first value for the dynamic temperature threshold.