Abstract: A semiconductor memory apparatus may include: a memory cell array; an ECC (Error Check and Correction) circuit configured to detect an error from data read from the memory cell array in response to a read command, correct the detected error, and output an error correction signal whenever an error is corrected; and an EF (Error Flag) generator configured to enter a flag output mode when the number of times that the error correction signal is generated during a monitoring period reaches a threshold, and output the error correction signal as an error flag in the flag output mode.

Abstract: A method includes a computing device of a storage network obfuscating encoded data slices of a first set of encoded data slices of a plurality of sets of encoded data slices using an obfuscating method to produce obfuscated encoded data slices. The method further includes the computing device of the storage network outputting the obfuscated encoded data slices for storage in the storage network.

Abstract: Methods, systems, and devices for spare substitution in a memory system are described. A controller may, as part of a background operation, assign a spare bit to replace a bit of a code word and save an indication of the spare bit assignment in a memory array. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) within a memory medium that retains the code word. An MSR corresponding to the bit to be replaced may include a quantity of erroneous bits relative to a threshold. The controller may, during a read operation, identify the spare bit in a first portion of the code word, determine the bit to be replaced based on accessing the memory array, and replace the bit with the spare bit concurrently with receiving a second portion of the code word.

Abstract: According to one general aspect, an apparatus may include a host interface circuit configured to receive offloading instructions from a host processing device, wherein the offloading instructions instruct the apparatus to compute an error correction code associated with a plurality of data elements. The apparatus may include a memory interface circuit configured to receive the plurality of data elements. The apparatus may include a plurality of memory buffer circuits configured to temporarily store the plurality of data elements. The apparatus may include a plurality of error code computation circuits configured to, at least in part, compute the error correction code without additional processing by the host processing device.

Abstract: A system and method for protecting memory instructions against faults are described. The system and method include converting the slave instructions to dummy operations, modifying memory arbiter to issue up to N master and N slave global/shared memory instructions per cycle, sending master memory requests to memory system, using slave requests for error checking, entering master requests to the GM/LM FIFO, storing slave requests in a register, and comparing the entered master requests with the stored slave requests.

Abstract: A memory controller is provided that is configured to control a memory accessed by a device connected to a host processor via a bus. The memory controller is configured to control a memory accessed by a device connected to a host processor via a bus, and includes a first interface circuit configured to communicate with the host processor; a second interface circuit configured to communicate with the memory; an error detection circuit configured to detect an error present in data received from the second interface circuit in response to a first read request received from the first interface circuit; a variable error correction circuit configured to correct the error based on at least one of a reference latency and a reference error correction level included in a first error correction option; and a fixed error correction circuit configured to correct the error in parallel with an operation of the variable error correction circuit.

Abstract: Systems, apparatuses, and methods related to chiplets are described. A chiplet-based system may include a memory controller chiplet to control accesses to a storage array, and the memory controller chiplet can facilitate error correction and cache management in a manner to minimize interruptions to a sequence of data reads to write corrected data from a prior read back into the storage array. For example, a read command may be received at a memory controller device of the memory system from a requesting device. Data responsive to the read command may be obtained and determined to include a correctable error. The data may be corrected, transmitted to the requesting device and written to cache of the memory controller device with an indication that data is valid and dirty (e.g., includes an error or corrected error). The data is written back to the memory array in response to a cache eviction event.

Abstract: Devices and techniques for extended error correction in a storage device are described herein. A first set of data, that has a corresponding logical address and physical address, is received. A second set of data can be selected based on the logical address. Secondary error correction data can be computed from the first set of data and the second set of data. Primary error correction data can be differentiated from the secondary error correction data by being computed from the first set of data and a third set of data. The third set of data can be selected based on the physical address of the first set of data. The secondary error correction data can be written to the storage device based on the logical address.

Abstract: Techniques for non-deterministic operation of a stacked memory system are provided. In an example, a method of operating a memory package can include receiving a plurality of memory access requests for a channel at a logic die, returning first data to a host in response to a first memory access request of the plurality of memory access requests, returning an indication of data not ready to the host in response to a second memory access request of the plurality of memory access requests for second data, returning a first index to the host with the indication of data not ready, returning an indication data is ready with third data in response to a third memory access request of the plurality of memory access requests, and returning the first index with the indication of data ready.

Abstract: In one implementation, storage system includes embedded storage devices, where each embedded storage device includes a direct-mapped solid state drive (SSD) storage portion and storage system controllers. The storage system controllers may be operatively coupled to the embedded storage devices via a bus. The storage system controllers may receive data to be written to the plurality embedded storage devices, select a plurality of available allocation units from the direct-mapped SSD storage portions of the plurality of embedded storage devices, respectively, and calculate a verification signature corresponding to the data. The storage system controllers may also write the data and the verification signature to a first subset of the plurality of available allocation units, calculate an erasure code corresponding to the data and the verification signature, and write the erasure code to a second subset of allocation units.

Abstract: A network element is configured to efficiently load balance packets through a computer network. The network element receives a packet associated with flow attributes and generates a Load Balancing Flow Vector (LBFV) from the flow attributes. The network element partitions the LBFV into a plurality of LBFV blocks and reorders the LBFV blocks to generate a reordered LBFV. The LBFV blocks are reordered based on a reordering sequence that is different from reordering sequences on other network elements in the computer network. The network element hashes the reordered LBFV to generate a hash key for the packet and selects a next hop link based on the hash key. The next hop link connects the network elements to a next hop network element in the computer network.

Abstract: Commutative coding in a geographically diverse data storage system is disclosed. Commutative coding can achieve a same result as more conventional hierarchical erasure coding of data, but can be more efficient. Commutative coding can employ Galois Field (GF) based bit-matrix operations. The bit-matrix operations can employ a reduced GF order in associated with expanding elements of input matrixes. A reduced GF order can perform matrix operations at a lower complexity, e.g., employing AND operations for a GF(2) in contrast to XOR operations for a GF(2w), where w=4, 8, 16, etc. In an aspect, commutative coding can comprise generating a second-tier coding fragment based on applying a second erasure coding scheme, via bit-matrix operations, to a first-tier encoded fragment, wherein the first-tier encoded fragment is based on an input data fragment and a first erasure coding scheme.

Abstract: Methods, systems, and devices for erasure decoding for a memory device are described. In accordance with the described techniques, a memory device may be configured to identify conditions associated with an erasure, a possible erasure, or an otherwise indeterminate logic state (e.g., of a memory cell, of an information position of a codeword). Such an identification may be used to enhance aspects of error handling operations, including those that may be performed at the memory device or a host device (e.g., error handling operations performed at a memory controller external to the memory device). For example, error handling operations may be performed using speculative codewords, where information positions associated with an indeterminate or unassigned logic state are assigned with a respective assumed logic state, which may extend a capability of error detection or error correction compared to handling errors with unknown positions.

Abstract: Methods, systems, and apparatuses for a memory device (e.g., DRAM) including an error check and scrub (ECS) procedure in conjunction with refresh operations are described. The ECS procedure may include read/modify-write cycles when errors are detected in code words. In some embodiments, the memory device may complete the ECS procedure over multiple refresh commands, namely by performing a read (or read/modify) portion of the ECS procedure while a first refresh command is executed, and by performing a write portion of the ECS procedure while a second refresh command is executed. The ECS procedure described herein may facilitate avoiding signaling conflicts or interferences that may occur between the ECS procedure and other memory operations.

Abstract: Disclosed is an operating method of a memory system that includes a plurality of memory blocks, the operating method including a first step of copying, in order to recover sudden power-off of the memory system, data of an open block to a selected block among the plurality of memory blocks while maintaining map data associated with the open block and open block identification information; a second step of erasing the open block; and a third step of copying the data, which is copied to the selected block, to the erased open block.

Abstract: Embodiments of this application disclose provides a low density parity check (LDPC) channel encoding method for use in a wireless communications system. A communication device encodes an input bit sequence by using a LDPC matrix, to obtain an encoded bit sequence for transmission. The LDPC matrix is obtained based on a lifting factor Z and a base matrix. Embodiments of the application provide eight particular designs of the base matrix. The encoding method provided in the embodiments of the application can be used in various communications systems including the fifth generation (5G) telecommunication systems, and can support various encoding requirements for information bit sequences with different code lengths.

Abstract: A memory system includes; a memory device, a memory controller including a first interface, a second interface, and a first data processor having a first error correction code (ECC) engine, and a field programmable gate array (FPGA) including a third interface connected to the first interface, a fourth interface connected to the second interface, a fifth interface connected to an external host, and a second data processor having a second ECC engine. The memory controller may configure a normal write operation path or highly reliable write operation path.

Abstract: A Solid State Drive (SSD) is disclosed. The SSD may include an interface to receive read and write requests from an application on a host. Storage, including at least one chip, may store data. An SSD controller may process the read and write requests from the application. A configuration module may configure the SSD. Storage may include a reliability table which may include entries specifying configurations of the SSD and reliabilities for those configurations.

Abstract: Methods and apparatus are disclosed for implementing principal component analysis (PCA) within a non-volatile memory (NVM) die of solid state drive (SSD) to reduce the dimensionality of machine learning data before the data is transferred to other components of the SSD, such as to a data storage controller equipped with a machine learning engine. The machine learning data may include, for example, training images for training an image recognition system in which the SSD is installed. In some examples, the on-chip PCA components of the NVM die are configured as under-the-array or next-to-the-array components. In other examples, one or more arrays of the NVM die are configured as multiplication cores for performing PCA matrix multiplication. In still other aspects, multiple NVM dies are arranged in parallel, each with on-chip PCA components to permit parallel concurrent on-chip processing of machine learning data.

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion. The operations performed by the processing device further include, responsive to determining that the value of the write counter satisfies the first threshold criterion, identifying a first memory unit and a second memory unit of the memory device, the second memory unit comprising one or more memory cells adjacent to one or more memory cells of the first memory unit. The operations performed by the processing device further include performing a read operation on the second memory unit to determine a set of failed bit count statistics corresponding to a plurality of codewords of the second memory unit.