Abstract: Techniques for void reduction in phase change memory (PCM) devices are provided. In one embodiment, the system is provided that comprises a PCM device comprising a first electrode and a second electrode. The system can further comprise a first connector coupled to the first electrode and that applies a negative voltage to the first electrode, and a second connector coupled to the second electrode and that applies a ground voltage to the second electrode, wherein applying the negative voltage to the first electrode and applying the ground voltage to the second electrode comprises negatively biasing the PCM device. The system can further comprise the first connector applying the positive voltage to the first electrode, and the second connector applying a ground voltage to the second electrode, wherein applying the positive voltage to the first electrode and applying the ground voltage to the second electrode comprises positively biasing the PCM device.

Abstract: A method for operating a memory device includes: receiving a program command, a memory address, and a program data from a controller; performing a first temperature sensing operation for measuring an internal temperature to produce a first result of the first temperature sensing operation; performing a program operation on the program data based on the first result of the first temperature sensing operation; performing a second temperature sensing operation for measuring an internal temperature to produce a first result of the second temperature sensing operation; and performing a temperature comparison operation for deciding whether the program operation failed when a difference between the first result of the first temperature sensing operation and the first result of the second temperature sensing operation is greater than or equal to a threshold value.

Abstract: In one embodiment there is a method for calculating a timer at a storage device including a plurality of memory portions for storing data and a memory controller for performing operations on the memory portions, the method comprises receiving a request to perform an initial operation on a memory portion; determining an operational characteristic associated with the initial operation to be performed on the memory portion; and calculating an amount of time for a memory portion timer based on the operational characteristics before the initiation of the initial operation on the memory portion, wherein performance of a subsequent operation for another memory portion is delayed until the amount of time for the memory portion timer has elapsed since initiation of the operation on the memory portion.

Abstract: A three-dimensional (3D) memory device having a plurality of vertical channel structures includes a first memory block, a second memory block, and a bit line. The first memory block includes first vertical channel structures extending in a vertical direction with respect to a surface of a substrate. The second memory block includes second vertical channel structures on the first vertical channel structures in the vertical direction and first and second string selection lines extending in a first horizontal direction and offset in the vertical direction. The bit line extends in the first horizontal direction between the first and second memory blocks and is shared by the first and second memory blocks. The second memory block may include first and second string selection transistors which are each connected to the bit line and the first string selection line and have different threshold voltages from each other.

Abstract: A memory system includes a controller configured to transfer first data for a program operation, and a memory device configured to perform an error check operation for determining whether second data received from the controller are equal to the first data and the program operation for storing the first data.

Abstract: An electronic device configured for real-time calibration of an on-board accelerometer. A plurality of acceleration measurements are collected from the accelerometer to form a data set. An accelerometer error correction model is maintained that includes bias error calibration parameters, sensitivity calibration parameters, and cross-axis calibration parameters that each specify respective weights for each of bias error, sensitivity error, and cross-axis error. Calibration values are determined for one or more of the bias error calibration parameters, the sensitivity calibration parameters, and the cross-axis error calibration parameters for the data set of acceleration measurements using the accelerometer error correction model. A true acceleration vector may be determined that corresponds to a subsequently received acceleration measurement using the determined calibration values.

Abstract: To provide a semiconductor device which can execute the product-sum operation. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. First analog data is stored in the first memory cell, and reference analog data is stored in the second memory cell. The first memory cell and the second memory cell supply a first current and a second current, respectively, when a reference potential is applied as a selection signal. The offset circuit has a function of supplying a third current corresponding to a differential current between the first current and the second current. In the semiconductor device, the first memory and the second memory supply a fourth current and a fifth current, respectively, when a potential corresponding to second analog data is applied as a selection signal.

Abstract: A static random-access memory (SRAM) system using a virtual banking architecture includes a processor communicatively coupled to an SRAM, and a plurality of circuits disposed in the SRAM and operated under control of the processor. The circuits include a divide circuit, a select circuit disposed in the divide circuit, and a local input/output circuit. The divide circuit divides a bank into first and second bit cell arrays, in which the first bit cell array and/or the second bit cell array includes at least one bit line. The select circuit is connected between the first and second bit cell arrays, and the select circuit selects one of the first and second bit cell arrays according to a predefined select logic. The local input/output circuit is connected to the select circuit and generates an output according to one or more predefined operations of the local input/output circuit.

Abstract: Some embodiments include memory arrays. The memory arrays can have global bitlines extending along a first horizontal direction, vertical local bitlines extending perpendicularly from the global bitlines, and wordlines extending along a second horizontal direction which is perpendicular to the first horizontal direction. The global bitlines may be subdivided into a first series at a first elevational level, and a second series at a second elevational level which is different from the first elevational level. The global bitlines of the first series can alternate with the global bitlines of the second series. There can be memory cell material directly between the wordlines and the vertical local bitlines. The memory cell material may form a plurality of memory cells uniquely addressed by wordline/global bitline combinations. Some embodiments include cross-point memory cell units that have areas of about 2F2.

Abstract: Provided herein may be a memory controller and a method of operating the same. The memory controller may include a control component configured to control an operation of a semiconductor memory device including a plurality of memory cells in response to a request from a host. The control component may be configured to select a subset of memory cells, among all memory cells in a selected page of the semiconductor memory device, and to determine an optimal read voltage based on the select subset of memory cells.

Abstract: Provided herein may be a memory controller and a method of operating the same. The memory controller may include a control component configured to control an operation of a semiconductor memory device including a plurality of memory cells in response to a request from a host. The control component may be configured to select a subset of memory cells, among all memory cells in a selected page of the semiconductor memory device, and to determine an optimal read voltage based on the select subset of memory cells.

Abstract: Methods, devices, and systems are provided for identifying dropouts in analyte monitoring system sensor data including segmenting sensor data into a plurality of time series wherein each time series is associated with a different instance of a repeating event, selecting a first time series to analyze for dropouts from the plurality of time series; comparing the selected first time series to a second time series among the plurality of time series, determining whether the selected first time series includes a portion that is more than a predefined threshold lower than a corresponding portion of the second time series, and displaying, on a computer system display, an indication that the selected first time series includes a dropout if the selected first time series includes a portion that is more than the predefined threshold lower than the corresponding portion of the second time series.

Abstract: Provided herein may be a memory controller and a method of operating the same. The memory controller may include a control component configured to control an operation of a semiconductor memory device including a plurality of memory cells in response to a request from a host. The control component may be configured to select a subset of memory cells, among all memory cells in a selected page of the semiconductor memory device, and to determine an optimal read voltage based on the select subset of memory cells.

Abstract: In some aspects, a heterogeneous computing system includes a quantum processor unit and a classical processor unit. In some instances, variables defined by a computer program are stored in a classical memory in the heterogeneous computing system. The computer program is executed in the heterogeneous computing system by operation of the quantum processor unit and the classical processor unit. Instructions are generated for the quantum processor by a host processor unit based on values of the variables stored in the classical memory. The instructions are configured to cause the quantum processor unit to perform a data processing task defined by the computer program. The values of the variables are updated in the classical memory based on output values generated by the quantum processor unit. The classical processor unit processes the updated values of the variables.

Abstract: A charge pump drive circuit is disclosed. The charge pump drive circuit includes a first pulse generating circuit and a second pulse generating circuit. Each of the first pulse generating circuit and the second pulse generating circuit is configured to connect to a charge pump. The first pulse generating circuit is configured to provide the charge pump with a series of first pulse signals. The second pulse generating circuit is configured to generate a second pulse signal in response to and based on an address translation detection signal and provide the second pulse signal to the charge pump or to the first pulse generating circuit. The first pulse generating circuit generates an additional first pulse signals based on the second pulse signal.

Abstract: A read margin control circuit is provided. The read margin control circuit includes a delay circuit that delays a data input/output signal and generates delay signals having different phases from each other, a sampler that samples the delay signals based on a data strobe signal to generate sampling values, and a determiner configured to determine a data valid window of the data input/output signal based on the sampling values.

Abstract: A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.

Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. The semiconductor device may include a memory string including memory cells coupled to each other in series via a channel layer, the memory string coupled between a bit line and a second source line. The semiconductor device may include a first source line electrically coupled to the second source line through the channel layer.

Abstract: Systems and methods of modeling the structure and behavior of the quantum continuum based on geometrical principles are provided. In some embodiments, systems and methods of modeling quantum structure and behavior may include modeling a region of space as a three-dimensional projection of a field of N-dimensional hard-spheres, modeling a stable particle within the region of space as a locally stably packed set of hard-spheres, defining an energy subspace comprising one or more additional dimensions, and modeling an energy of the stable particle as an amount of hard-sphere geometry shifted out of the three spatial dimensions into the energy subspace sufficient for the set of hard-spheres to pack stably. Systems and methods for modeling virtual particles and performing quantum communication are also described.

Abstract: A method and circuit QED implementation of a control-phase quantum logic gate UCP(?)=diag[1,1,1, ei?]. Two qubits Qi, two resonators Ra, Rb and a modulator. Q1 and Q2, each has a frequency ?qi and characterized by {circumflex over (?)}zi. Ra is associated with Q1 and defined by a quantum non-demolition (QND) longitudinal coupling g1z{circumflex over (?)}1z(â†+â). Rb is integrated into Ra, the QND second longitudinal coupling is defined by Ra as g2z{circumflex over (?)}2z({circumflex over (b)}†+{circumflex over (b)}) or, when Rb is integrated into Ra, the QND second longitudinal coupling is defined by Ra as g2z{circumflex over (?)}2z(â†+â) The modulator periodically modulates, at a frequency ?m during a time t, the longitudinal coupling strengths g1z and g2z with respective signals of respective amplitudes {tilde over (g)}1 and {tilde over (g)}2. Selecting a defined value for each of t, g1z and g2z determines ? to specify a quantum logical operation performed by the gate.