Abstract: A nonvolatile memory device includes a first semiconductor layer, a second semiconductor layer and a control circuit. The memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate, the first vertical structure includes first sub-blocks and the second vertical structure includes second sub-blocks. The second semiconductor layer includes a lower substrate that includes address decoders and page buffer circuits. The first vertical structure includes first via areas in which one or more through-hole vias are provided, through-hole vias pass through the first vertical structure. The first sub-blocks are arranged among the first via areas and the second sub-blocks are arranged among the second via areas. The control circuit groups the memory blocks into a plurality of groups based on whether the memory blocks is close to the first via areas and performs address re-mapping.

Abstract: Artificial neuromorphic circuit includes synapse circuit and post-neuron circuit. Synapse circuit includes phase change element, first switch, and second switch. First switch is coupled to phase change element, and is configured to receive first pulse signal. Second switch is coupled to phase change element. Input terminal of post-neuron circuit is coupled to switch circuit, and input terminal is coupled to phase change element. Input terminal charges capacitor through switch circuit in response to first pulse signal. Post-neuron circuit is configured to generate firing signal based on voltage level at input terminal and threshold voltage, and is further configured to generate first control signal and second control signal based on firing signal. Post-neuron circuit turns off switch circuit according to first control signal. Second control signal is configured to cooperate with second pulse signal to control second switch so as to control a state of phase change element.

Abstract: Various methods and systems are provided for graphical grading of medical findings during a diagnostic imaging exam. In one example, a method includes displaying an acquired medical image on a display area of a display device, displaying a virtual anatomical diagram on the display area adjacent to the ultrasound medical image, responsive to selection of an anatomical region from the anatomical diagram, displaying a plurality of icons representing graded diagnostic findings associated with the anatomical region, and responsive to selection of an icon of the plurality of icons, storing the ultrasound medical image in permanent memory.

Abstract: Examples disclosed herein relate to digital hash code generation. A digital hash code generating device comprising a plurality of variable conductance elements. Each variable conductance element is coupled to a selected row line and to a selected column line of a crossbar array. Each variable conductance element comprises a conductance from a stochastic distribution of conductance. A plurality of comparator elements and each comparator element is connected to a set of at least two column lines. The plurality of comparator elements generates a hash code in response to a vector input applied to the plurality of row lines of the crossbar array.

Abstract: A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Abstract: A mobile-platform imaging device uses compression of the target region to generate an image of an object. A tactile sensor has an optical waveguide with a flexible, transparent first layer. Light is directed into the waveguide. Light is scattered out of the first layer when the first layer is deformed. The first layer is deformed by the tactile sensor being pressed against the object, A force sensor detects a force pressing the tactile sensor against the object and outputs corresponding force information. A first communication unit receives the force information from the force sensor. A receptacle holds a mobile device with a second communication unit and an imager that can generate image information using light scattered out of the first layer. The first communication unit communicates with the second communication unit and the mobile device communicates with an external network.

Abstract: There are provided a memory device for improving performance by decreasing a time at which a program operation is completed while decreasing a peak current flowing through a bit line, and an operating method of the memory device.

Abstract: The system and process of therapeutic and effective cavitation by using ultrasound to collapse gas vesicles as well as cavitate the bubbles produced from the collapsed gas vesicles. Therapeutic effect includes, but is not limited to lysing cells by cavitation. The cells expressing the gas vesicles can optionally be used as delivery cells to preform tasks such as transporting the gas vesicles into deep tissue areas, releasing compounds at the cavitation site, and more. The gas vesicles can optionally be modified to facilitate getting the bubbles near the cavitation targets by functionalizing the gas vesicles.

Abstract: Provided is a memory device. The memory device may include a voltage code controller configured to generate a voltage code that generates a program voltage and pass voltages based on a number of times a program loop is performed, and a voltage generator configured to generate the program voltage and the pass voltages in response to the voltage code, transmit the program voltage to a selected word line, and transmit the pass voltages to unselected word lines, wherein the voltage generator is configured to sequentially increase the pass voltage that is applied to the unselected word lines in order of proximity to the selected word line as the number of times a program loop is performed increases.

Abstract: Methods and devices for manipulating an articulating arm of an ultrasound therapy system are provided. In one embodiment an articulating arm comprises a first articulating arm link, a second articulating arm link, a rotating joint configured to rotationally connect the first articulating arm link to the second articulating arm link so that the first and second articulating arm links are substantially perpendicular, and an arm limiter attached to the second articulating arm link, the arm limiter being configured to limit rotation of the second articulating arm link along the rotating joint with respect to the first articulating arm link. An ultrasound therapy transducer and imaging system can be mounted on the articulating arm. Methods for performing manipulating the arm and system are also provided.

Abstract: An actuating unit, for a memory that includes at least one memory cell in which one of a plurality of discrete storable values is encodable as an electrical resistance value of a memristor, includes: a measuring device configured to measure the resistance value of the memristor; a discretizer configured to allocate to the measured resistance value one of the plurality of discrete storable values as the read value; a comparator unit configured to ascertain the difference between the nominal resistance value of the memristor that corresponds to the read value and the measured resistance value of the memristor; and a driver configured to apply, to the memristor on the basis of the ascertained difference, a current-time profile that drives the actual resistance value of the memristor in the direction of the nominal resistance value that corresponds to the read value, so that the memory cell is refreshed.

Abstract: A control circuit for a neural network system includes a first multiply accumulate circuit, a first neuron value storage circuit and a first processor. The first multiply accumulate circuit includes n memristive cells. The first terminals of the n memristive cells receive a supply voltage. The second terminals of the n memristive cells are connected with a first bit line. The control terminals of the n memristive cells are respectively connected with n word lines. Moreover, n neuron values of a first layer are stored in the first neuron value storage circuit. In an application phase, the first neuron value storage circuit controls the n word lines according to binary codes of the n neuron values. The first processor generates a first neuron value of a second layer.

Abstract: Robotic system and methods for robotic arthroplasty. The robotic system includes a machining station and a guidance station. The guidance station tracks movement of various objects in the operating room, such as a surgical tool, a humerus of a patient, and a scapula of the patient. The guidance station tracks these objects for purposes of displaying their relative positions and orientations to the surgeon and, in some cases, for purposes of controlling movement of the surgical tool relative to virtual cutting boundaries or other virtual objects associated with the humerus and scapula to facilitate preparation of bone to receive a shoulder implant system.

Abstract: According to an embodiment, a control circuitry performing: a first operation of reading data out of a memory cell with a first voltage applied to a word line while changing the first voltage by a first shift amount within a first range, and a second operation of reading data out of the memory cell with a second voltage applied to the word line while changing the second voltage by a second shift amount within a second range, wherein the second shift amount is smaller than the first shift amount, and wherein the control circuitry performs the second operation to apply the second voltage to the word line subsequently to application of the first voltage to the word line in the first operation.

Abstract: Ultrasound (US) apparatus and method for applying low energy US onto an internal tissue/organ, including a non-invasive US appliance used on a treatment region over the internal tissue/organ, and an electrical stimulation apparatus for simultaneously inducing interferential electrical stimulation. A controller controls parameters of the electrical stimulation apparatus and the US appliance, and dynamically changes at least one of the parameters, for maintaining the impedance of the body tissue in the treatment region within an impedance range. The US apparatus includes an impedance monitoring apparatus for continuously measuring, tracking, and monitoring impedance in the treatment region, wherein the controller dynamically changes at least one of the parameter in response to the impedance as monitored, for maintaining the impedance within the predefined range.

Abstract: A switching architecture provides input voltage signals from input voltage lines to a plurality of global word lines connected to word lines of a memory array in a memory device. The switching architecture includes a first switching block receiving a first set of positive voltages used to bias unselected word lines and being connected to a first output line providing a first output bias voltage, and a second switching block receiving a second set of positive voltages and a third set of negative voltages used to bias selected word lines and being connected to a second output line providing a second output bias voltage. A plurality of final switches are input connected to the first and second output lines and are output connected to a respective global word line.

Abstract: Devices, systems and methods for improving the performance of a memory device are described. An example method includes obtaining a plurality of cell counts for each of a plurality of read voltages applied to the memory device, generating, based on the plurality of cell counts and the plurality of read voltages, at least one ones count, at least one checksum, and a plurality of samples corresponding to a distribution function of at least one read voltage of the plurality of read voltages, determining an updated value for the at least one read voltage based on an output of a deep neural network whose input comprises the at least one ones count, the at least one checksum, and the plurality of samples, and applying the updated value of the at least one read voltage to the memory device to retrieve information from the memory device.

Abstract: Embodiments of the present disclosure relate to techniques for inducing physiological perturbations in a subject via neuromodulation, e.g., peripheral neuromodulation of a region of interest of an organ. The nature and degree of the perturbations may be related to the subject's clinical condition. Accordingly, an assessment of one or more characteristics of the perturbations may be used to determine a clinical condition of the subject.

Abstract: An illuminated needle device for performing a heart valve repair includes an outer member and an inner member. The outer member includes a body that has a proximal end and a distal end. The body of the outer member defines a lumen therethrough and the distal end of the body includes a needle. The inner member is slidably disposed within the lumen of the outer member. The inner member includes a distal end that has a radiation emitting element. The illuminated needle device is characterized by the outer and inner members together forming a flexible, elongate shaft, and the inner member being configured to emit radiation from the radiation emitting element from a location proximate to the distal end of the outer member.

Abstract: A programming method for a memory device is disclosed. The programming method comprises moving a plurality of first charge carriers at a shallow energy level to a channel in a substrate layer before a fine programming operation for a first word line, wherein the plurality of first charge carriers at the shallow energy level correspond to a memory cell to be programmed.