Patents Examined by Hien N Nguyen
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Patent number: 11581041Abstract: A nonvolatile memory apparatus includes a memory cell array and a memory control circuit. The memory cell array includes a plurality of sub arrays each including a plurality of memory cells coupled to a plurality of bit lines. The memory control circuit sequentially couples thereto, based on a single read command signal, at least a single bit line disposed on the respective sub arrays to sequentially access a memory cell coupled to the at least single bit line.Type: GrantFiled: January 29, 2021Date of Patent: February 14, 2023Assignee: SK hynix Inc.Inventor: Min Chul Shin
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Patent number: 11565135Abstract: Apparatus and methods for deactivating bronchial nerves extending along the secondary bronchial branches of a mammalian subject to treat asthma and related conditions. An ultrasonic transducer (11) is inserted into the bronchus as, for example, by advancing the distal end of a catheter (10) bearing the transducer into the secondary bronchial section to be treated. The ultrasonic transducer emits circumferential ultrasound so as to heat tissues throughout circular impact volume (13) as, for example, at least about 1 cm3 encompassing the bronchus to a temperature sufficient to inactivate nerve conduction but insufficient to cause rapid ablation or necrosis of the tissues. The treatment can be performed without locating or focusing on individual bronchial nerves. The apparatus and methods utilized for lung tumor ablation.Type: GrantFiled: August 2, 2021Date of Patent: January 31, 2023Assignee: AERWAVE MEDICAL, INC.Inventors: Reinhard J. Warnking, Satoshi Nishiaoki
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Patent number: 11568947Abstract: A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines. The memory device also includes a peripheral circuit configured to perform a plurality of program loops to program memory cells, among the plurality of memory cells, connected to a selected word line among the plurality of word lines. The memory device further includes control logic configured to control the peripheral circuit to set a step voltage based on the number of turned off memory cells among the selected memory cells and then apply a program voltage, to which the step voltage is added, to the selected word line in a next program loop, during a verify operation of a program operation and the verify operation included in each of the plurality of program loops.Type: GrantFiled: June 30, 2021Date of Patent: January 31, 2023Assignee: SK hynix Inc.Inventor: Jae Woong Kim
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Patent number: 11562790Abstract: Methods and systems include memory devices with a memory array comprising a plurality of memory cells. The memory devices include a control circuit operatively coupled to the memory array and configured to receive a read request for data and to apply a first voltage at a first time duration to the memory array based on the read request. The control circuit is additionally configured to count a number of the plurality of memory cells that have switched to an active read state based on the first voltage and to derive a second time duration. The control circuit is further configured to apply a second voltage at the second duration to the memory array. The control circuit is also configured to return the data based at least on bits stored in a first and a second set of the plurality of memory cells.Type: GrantFiled: June 30, 2021Date of Patent: January 24, 2023Assignee: Micron Technology, Inc.Inventors: Graziano Mirichigni, Riccardo Muzzetto, Ferdinando Bedeschi
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Patent number: 11562789Abstract: In an example, a multiplexer is provided. The multiplexer may include one or more first strings controlling access to source-lines of the memory, wherein a first string of the one or more first strings includes a first set of two high voltage transistors and a first plurality of low voltage transistors. The multiplexer may include one or more second strings controlling access to bit-lines of the memory, wherein a second string of the one or more second strings includes a second set of two high voltage transistors and a second plurality of low voltage transistors. A method for operating such multiplexer is provided.Type: GrantFiled: December 10, 2020Date of Patent: January 24, 2023Assignee: INFINEON TECHNOLOGIES AGInventors: David Mueller, Wolf Allers, Christian Peters
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Patent number: 11554250Abstract: Medical appliances including reinforcing bands and radiopaque marker bands are disclosed. In some embodiments, bands may comprise two or more material layers. A first layer may control the mechanical properties of a multilayered marking band, and a second layer may exhibit greater radiopacity than the first layer. Bands may also comprise a single layer.Type: GrantFiled: October 13, 2017Date of Patent: January 17, 2023Assignee: Merit Medical Systems, Inc.Inventors: John William Hall, Craig Nordhausen
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Patent number: 11553901Abstract: Ultrasound-based estimation of disease activity, such as for NAS or other activity index for NAFLD for liver disease, is provided. Ultrasound measures acoustic scatter and shear wave propagation parameters, such as measuring acoustic backscatter coefficient, shear wave velocity, and shear wave damping ratio. A score for the disease activity is determined from these scatter and shear wave propagation parameters. The physician may be assisted by relatively inexpensive and rapid ultrasound as compared to biopsy or MRI based scoring in scoring activity of a disease, such as NAFLD. Ultrasound imaging is more readily available and less expensive and MRI, and is non-invasive.Type: GrantFiled: March 12, 2020Date of Patent: January 17, 2023Assignee: Siemens Medical Solutions USA, Inc.Inventor: Yassin Labyed
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Patent number: 11551750Abstract: A circuit may include a memory cell. The memory cell may include a first memory element, a second memory element, a first transistor, and a second transistor. The first memory element may be connected to a bit line. The second memory element may be connected to a select line. The first transistor may be connected to a first word line. The second transistor may be connected to a second word line. The first memory element may be programmed by applying a first write voltage to the bit line, applying a second write voltage to the second word line, applying a first intermediate voltage to the select line, and applying a second intermediate voltage to the first word line. The select line may be connected to a high impedance. The first write voltage may be a positive supply voltage, the second write voltage may be a negative supply voltage.Type: GrantFiled: December 11, 2020Date of Patent: January 10, 2023Assignee: International Business Machines CorporationInventors: Bahman Hekmatshoartabari, Alexander Reznicek
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Patent number: 11547875Abstract: A device which utilizes low intensity extracorporeal shock therapy for purposes of treating soft tissue damage, cellulite reduction, or erectile dysfunction, to permit a simple, inexpensive, robust, home use solution which permits self-applied treatment for various parts of the user's body with a form factor, display, information, guidance, tutorials and training, marketing communication and purchase opportunities, viewing angle, timers, annunciators, sound attenuation, and payment options which provide an untrained amateur user with all tools and guidance necessary to properly, effectively, safely and affordably self-administer treatments.Type: GrantFiled: April 16, 2020Date of Patent: January 10, 2023Assignee: MOON POOL LLCInventor: Jonathan Hoffman
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Patent number: 11551070Abstract: Artificial neuromorphic circuit includes synapse and post-neuron circuits. Synapse circuit includes phase change element, first switch having at least three terminals, and second switch. Phase change element includes first and second terminals. First switch includes first, second and control terminals. Second switch includes first, second and control terminals. First switch is configured to receive first pulse signal. Second switch is coupled to phase change element and first switch, and is configured to receive second pulse signal. Post-neuron circuit includes capacitor and input terminal. Input terminal of post-neuron circuit charges capacitor in response to first pulse signal. Post-neuron circuit generates firing signal based on voltage level of capacitor and threshold voltage. Post-neuron circuit generates control signal based on firing signal. Control signal controls turning on of second switch.Type: GrantFiled: November 15, 2019Date of Patent: January 10, 2023Assignees: JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD., ALTO MEMORY TECHNOLOGY CORPORATIONInventors: Chung-Hon Lam, Ching-Sung Chiu
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Patent number: 11544554Abstract: A determiner which learns acceleration measurement data which has been obtained by an accelerated aging test and indicates that a facility changes from a normal state to an aged state, and advance label data which is obtained by giving a label to data indicating characteristics of aging in the acceleration measurement data. Measurement data of aging diagnosis is obtained from the facility which is operating, teacher aging degree label data is found from a record of maintenance of the facility, and additional data is obtained from the measurement data and the teacher aging degree label data. When a difference between predicted aging degree label data and teacher aging degree label data is greater than a predetermined value, learning data is selected as additional learning data. The additional learning data is learned to update the determiner.Type: GrantFiled: January 26, 2018Date of Patent: January 3, 2023Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Naofumi Shimasaki, Kazutaka Ikeda
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Patent number: 11538522Abstract: Methods and systems include memory devices with a memory array comprising a plurality of memory cells. The memory devices include a control circuit operatively coupled to the memory array and configured to receive a read request for data and to apply a first voltage to the memory array based on the read request. The control circuit is additionally configured to count a total number of the plurality of memory cells that have switched to an active read state based on the first voltage and to apply a second voltage to the memory array based on the total number. The control circuit is further configured to return the data based at least on bits stored in a first and a second set of the plurality of memory cells.Type: GrantFiled: June 30, 2021Date of Patent: December 27, 2022Assignee: Micron Technology, Inc.Inventors: Graziano Mirichigni, Corrado Villa
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Patent number: 11532667Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.Type: GrantFiled: October 30, 2019Date of Patent: December 20, 2022Assignee: TOHOKU UNIVERSITYInventors: Yoshiaki Saito, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
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Patent number: 11532298Abstract: First data comprising a first range of audio frequencies is received. The first range of audio frequencies corresponds to a predetermined cochlear region of a listener. Second data comprising a second range of audio frequencies is also received. Third data comprising a first modulated range of audio frequencies is acquired. The third data is acquired by modulating the first range of audio frequencies according to a stimulation protocol that is configured to provide neural stimulation of a brain of the listener. The second data and the third data are arranged to generate an audio composition from the second data and the third data.Type: GrantFiled: December 20, 2021Date of Patent: December 20, 2022Assignee: BrainFM, Inc.Inventor: Adam Hewett
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Patent number: 11527289Abstract: A method includes setting a current level of a write signal to a first non-zero value for a first period of time. The write signal is provided to a memory element during the first period of time. The current level of the write signal is adjusted from the first non-zero value to a second non-zero value, different from the first non-zero value, for a second period of time. The write signal is provided to the memory element during the second period of time. The current level of the write signal is adjusted from the second non-zero value to a third value, different from the first non-zero value and different from the second non-zero value, for a third period of time. The write signal is provided to the memory element during the third period of time.Type: GrantFiled: March 12, 2021Date of Patent: December 13, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: I-Che Lee, Huai-Ying Huang
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Patent number: 11523774Abstract: For tissue property estimation with ultrasound, multiple different types of measurements are performed by an ultrasound system, including scatter measurements and shear wave propagation measurements. The tissue property, such as liver fat fraction, is estimated using a combination of these different types of measurements.Type: GrantFiled: September 26, 2017Date of Patent: December 13, 2022Assignee: Siemens Medical Solutions USA, Inc.Inventors: Yassin Labyed, Andrzej Milkowski
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Patent number: 11521686Abstract: A memory apparatus and method of operation is provided. The apparatus includes memory cells connected to word lines and bit lines and configured to retain a threshold voltage corresponding to one of a plurality of data states following a program operation. A control circuit is coupled to the word lines and the bit lines. The control circuit is configured to count a bit-scan quantity of the memory cells during a bit-scan of the program operation. The control circuit determines whether the bit-scan quantity of the plurality of memory cells is greater than at least one predetermined bit-scan threshold. In response to the bit-scan quantity of the memory cells being greater than the at least one predetermined bit-scan threshold, the control circuit is configured to adjust a word line ramp rate of a word line voltage applied to the word lines during the program operation.Type: GrantFiled: March 31, 2021Date of Patent: December 6, 2022Assignee: SanDisk Technologies LLCInventors: Yu-Chung Lien, Hua-Ling Hsu, Huai-Yuan Tseng, Fanglin Zhang
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Patent number: 11521054Abstract: An analog neuromorphic circuit is disclosed, having input voltages applied to a plurality of inputs of the analog neuromorphic circuit. The circuit also includes a plurality of resistive memories that provide a resistance to each input voltage applied to each of the inputs so that each input voltage is multiplied in parallel by the corresponding resistance of each corresponding resistive memory to generate a corresponding current for each input voltage and each corresponding current is added in parallel. The circuit also includes at least one output signal that is generated from each of the input voltages multiplied in parallel with each of the corresponding currents for each of the input voltages added in parallel. The multiplying of each input voltage with each corresponding resistance is executed simultaneously with adding each corresponding current for each input voltage.Type: GrantFiled: June 29, 2021Date of Patent: December 6, 2022Assignee: University of DaytonInventors: Chris Yakopcic, Md Raqibul Hasan, Tarek M. Taha
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Patent number: 11521663Abstract: A memory circuit includes a first memory cell on a first layer, a second memory cell on a second layer different from the first layer, a first select transistor on a third layer different from the first layer and the second layer, a first bit line, a second bit line and a first source line. The first bit lines extends in a first direction, and is coupled to the first memory cell, the second memory cell and the first select transistor. The second bit line extends in the first direction, and is coupled to the first select transistor. The first source line extends in the first direction, is coupled to the first memory cell and the second memory cell, and is separated from the first bit line in a second direction different from the first direction.Type: GrantFiled: January 21, 2021Date of Patent: December 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Ching Liu, Chia-En Huang, Yih Wang
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Patent number: 11515472Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.Type: GrantFiled: December 2, 2020Date of Patent: November 29, 2022Assignee: SanDisk Technologies LLCInventors: Young-Suk Choi, Won Ho Choi