Abstract: A photolithography device includes: a fixed slot, configured to install and fix the light source; a sensing module, configured to sense the distance information between the light source and the fixed slot; a prompt module, configured to send prompt information according to the distance information; and a determination module, configured to determine the installation status of the light source according to the prompt information.

Abstract: A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.

Abstract: The present application provides an exposure machine, relates to semiconductor integrated circuit manufacturing technologies. The exposure machine includes a machine platform, a shielding device, and a drive device; the machine platform is provided with a recess portion, the recess portion has a top opening, a base and a placement table are disposed in the recess portion, the placement table is configured to carry a mask carrier, and the mask carrier can be placed on the placement table through the top opening; and the machine platform is further provided with a drive device and a movable shielding device, when the shielding device is at an initial position, the shielding device covers the top opening, and when the mask carrier needs to be placed on the placement table through the top opening, the drive device opens the shielding device to expose the top opening.

Abstract: A substrate processing apparatus includes a nozzle for discharging a processing solution, a processing solution supply part for supplying the processing solution to the nozzle and a controller. The processing solution supply part includes a tank, a first conduit for guiding the processing solution from the tank to the nozzle, a pump installed in the first conduit, and a filter having first and second spaces, and a filtering member for separating between the first space and the second space. The controller performs a first control process of controlling the processing solution supply part to flow the processing solution from the first space to the second space through the filtering member by the pump, and after the first control process, a second control process of controlling the processing solution supply part to flow the processing solution from the second space to the first space through the filtering member by the pump.

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

Abstract: A defect inspection system provides an image of a surface of a hard drive media to a machine learning model that is trained to identify predefined classifications of abnormal surface patterns on the hard drive media, each of the predefined classifications being associated in system memory with a severity indicator. The defect inspection model analyzes the image and generates and output indicating that the image includes a pattern consistent with a select classification of the predefined classifications of abnormal surface patterns. When the severity indicator for the select classification satisfies a failure condition, the defect inspection system automatically implements a corrective action.

Abstract: A photolithography method is provided. The photolithography method includes forming a photoresist layer on a wafer, exposing a portion of the photoresist layer by using an exposure device and a mask, and forming a photoresist pattern by removing a non-exposed portion of the photoresist layer. The mask includes a substrate having a main pattern area and a blocking area outside the main pattern area, a main pattern on the main pattern area of the substrate, and a blocking pattern on the blocking area of the substrate. An external circumference of the blocking pattern extends to the maximum area of the mask that may be illuminated by the exposure device or to the outside of the maximum area of the mask.

Abstract: Embodiments of baking chambers for baking a photomask are provided herein. In some embodiments, a baking chamber includes: a chamber body enclosing a first interior volume and a second interior volume, disposed beneath and fluidly independent from the first interior volume; a radiant heat source disposed in the first interior volume; a photomask support structure configured to support a photomask disposed in the second interior volume; a window disposed between the first interior volume the second interior volume, wherein the window is made of a material that is transparent to thermal radiation; a first gas inlet and a first gas outlet coupled to the first interior volume; and a second gas inlet and a second gas outlet coupled to the second interior volume on opposite ends thereof to facilitate flow of a process gas laterally through the second interior volume and across the photomask support structure.

Abstract: An exposure method of performing an exposure operation of exposing a substrate via a projection optical system is provided. The method includes executing, in an exposure period in which the exposure operation is performed, aberration correction of the projection optical system to correct an aberration generated by performing the exposure operation, measuring, in a non-exposure period succeeding the exposure period, in which the exposure operation is not performed, an aberration of the projection optical system, and correcting the aberration of the projection optical system using a correction amount adjusted based on a result of the measurement so as to reduce a correction residual in the aberration correction of the projection optical system.

Abstract: A method for making a negative-working lithographic printing plate includes subjecting an image-wise exposed, developed, and dried plate precursor to UV LED radiation.

Abstract: Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

Abstract: A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

Abstract: The present invention provides a control apparatus for performing synchronous control to synchronize driving of a second moving member so as to follow driving of a first moving member, including a feedforward control system that includes a calculator configured to obtain an input/output response of the second moving member and position deviations of the first moving member and the second moving member while driving the first moving member and the second moving member in synchronism with each other, and calculate a feedforward manipulated variable based on the input/output response of the second moving member and the synchronous error between the first moving member and the second moving member obtained from the position deviations of the first moving member and the second moving member.

Abstract: A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.

Abstract: A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may include: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

Abstract: A mask chuck may include a base plate including a central region and an edge region surrounding the central region, a head part including a first surface connected to the edge region of the base plate and configured to move on the edge region to be close to the central region or away from the central region, and a pad part disposed on a second surface of the head part opposite to the first surface of the head part. The edge region may include a first edge region extending in a first direction, a second edge region extending in the first direction and spaced apart from the first edge region in a second direction crossing the first direction, a third edge region extending in the second direction, and a fourth edge region extending in the second direction and spaced apart from the third edge region in the first direction.

Abstract: A broadband light source includes a rotatable drum coated with plasma-forming target material, a rotational actuator configured to rotate the rotatable drum, and a rotary encoder connected to the rotatable drum. The broadband light source may include a linear actuator configured to axially translate the rotatable drum and linear encoder connected to the rotatable drum. The broadband light source includes a pulsed laser source configured to direct pulsed illumination to a set of spots on the material-coated portion of the rotatable drum for exciting the plasma-forming target material and emitting broadband light as the drum is actuated. The broadband light source includes a control system. The control system is configured to receive one or more rotational position indicators from the rotary indicator and control triggering of the laser source based on the one or more rotational position indicators from rotary encoder.

Abstract: An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.