Abstract: A method includes: providing a workpiece to a semiconductor apparatus, the workpiece comprising a material layer, wherein the material layer includes a plurality of areas extending along a first axis; scanning the workpiece in a first direction along the first axis to generate first topography measurement data; scanning the workpiece in a second direction along the first axis to generate second topography measurement data; and performing an exposure operation on the material layer according to the first topography measurement data and the second topography measurement data.

Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.

Abstract: Disclosed is an illumination system for delivering incoherent radiation to a metrology sensor system. Also disclosed is an associated metrology system and method. The illumination system comprises a spatial filter system for selective spatial filtering of a beam of said incoherent radiation outside of a module housing of the metrology sensor system. At least one optical guide is provided for guiding the spatially filtered beam of incoherent radiation to the metrology sensor system, the at least one optical guide being such that the radiation guided has a substantially similar output angle as input angle.

Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

Abstract: A manufacturing method for a structure includes preparing a dry film supported on one surface of a support; bonding the dry film to a substrate so that the dry film and the substrate are in contact with each other; performing first exposure of the dry film bonded to the substrate via the support; removing the support after the first exposure; performing second exposure of the dry film after the support is removed via a photomask; and developing the dry film after the first exposure and the second exposure.

Abstract: The invention provides a substrate support arranged to support a substrate, comprising piezo a actuator, further comprising a first pair of electrodes, a second pair of electrodes and a piezo material having a first surface and a second surface. The first surface is arranged along a first direction and second direction. The first pair of electrodes comprises a first electrode arranged on the first surface and a second electrode arranged on the second surface. The second pair of electrodes is arranged to shear the piezo material. The first pair of electrodes is arranged to elongate the piezo material in a third direction perpendicular to the first direction and second direction. The first electrode is divided into at least two parts and is arranged to rotate the first surface and the second surface relatively to each other about the first direction wherein the piezo actuator is arranged to support the substrate.

Abstract: An optical arrangement, in particular to a lithography system, includes: a first component, in particular a carrying frame; a second component which is movable relative to the first component, in particular a mirror or a housing; and at least one stop having at least one stop face for limiting the movement of the second component in relation to the first component. The stop includes a metal foam for absorbing the kinetic energy of the second component when it strikes against the stop face. A method for repairing an optical arrangement of this kind after a shock load includes replacing at least one stop, in which the metal foam was compressed under the shock load, with a stop in which the metal foam is not compressed.

Abstract: A focus-sensitive metrology target may be formed and read-out by a fabrication tool. A resulting overlay signal may be translated into a focus offset by comparison to a previously-determined calibration curve. One or more translated signals may be fed back to the fabrication tool for focus correction or used for prediction of on-device overlay (correction of overlay metrology results). In one embodiment, focus and overlay may be measured using a single target, where one portion of the target is formed on a first layer and includes a focus-sensitive design, and where another portion of the target is formed on a second layer and includes a relatively less focus-sensitive design. In some embodiments, a relative difference in focus response may be used to estimate an impact of focus error on device overlay and calculate non-zero offset contributions.

Abstract: A method for positioning a substage (9), supported by a main stage (5), relative to a reference object, the substage moveable in a direction (7) between a first and second position relative to the main stage. The method includes positioning the first stage using a passive force system that is activated by positioning the main stage. The passive force system includes two magnet systems (119, 121), each magnet system being configured to apply a force in the direction to the first stage with respect to the second stage in a non-contact manner, the forces resulting in a resultant force applied to the first stage in the direction by the passive force system. A magnitude and/or a direction of the resultant force depends on the position of the first stage relative to the second stage, and the first stage has a zero-force position between the first and second position in which the resultant force is zero.

Abstract: A method of determining candidate patterns from a set of patterns of a patterning process. The method includes obtaining (i) a set of patterns of a patterning process, (ii) a search pattern having a first feature and a second feature, and (iii) a search condition comprising a relative position between the first feature and the second feature of the search pattern; and determining a set of candidate patterns from the set of patterns that satisfies the search condition associated with the first feature and the second feature of the search pattern.

Abstract: In order to prevent an erroneous determination of an on-film defect, the sensitivity of the post-inspection is reduced so that a film swelling due to a minute defect would not be detected. Classification is performed to determine whether a defect is at least one of an on-film defect and a film swelling, by performing a coordinate correction on the result of a post-inspection by an actual-defect fine alignment using the result of a pre-inspection performed with two-stage thresholds, and by checking defects against each other. In addition, classification is performed to determine whether a defect is at least one of an on-film defect and a film swelling by, during the post-inspection, preparing instruction data from information of the refractive index and thickness of a film formed on a wafer and comparing the instruction data with a signal intensity ratio of a detection system.

Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: A measurement system used in a manufacturing line for micro-devices includes: a plurality of measurement devices in which each device performs measurement processing on a substrate; and a carrying system to perform delivery of a substrate with the plurality of measurement devices. The plurality of measurement devices includes a first measurement device that acquires position information on a plurality of marks formed on a substrate, and a second measurement device that acquires position information on a plurality of marks formed on a substrate. Position information on a plurality of marks formed on a substrate can be acquired under a setting of a first predetermined condition in the first measurement device, and position information on a plurality of marks formed on another substrate can be acquired under a setting of a second predetermined condition different from the first predetermined condition in the second measurement device.

Abstract: Disclosed is a metrology apparatus comprising an optical element configured to receive at or near a pupil plane of the metrology apparatus, at least first radiation comprising a first higher diffracted order and second radiation comprising a zeroth order resulting from illumination of a metrology target with radiation; and to direct said first radiation and second radiation together in a first direction. The metrology apparatus is further configured to form at least a first image of a first interference pattern, the first interference pattern resulting from interference of said first radiation and second radiation at an image plane.

Abstract: An inspection device for an optical ferrule includes one or more reflectors. Each reflector has a mating surface and a mirror disposed at an oblique angle with respect to the mating surface. Each reflector is configured to mate with the optical ferrule when the optical ferrule is disposed within a housing of an optical connector. When the mating surface of the reflector is in mated contact with the mating surface of the optical ferrule, the mirror is positioned to provide a reflected view of at least a portion of a mating surface of the optical ferrule.

Abstract: The invention provides a vibration isolation system (IS), comprising a piston (402) to carry a payload, a connecting member (410), a spring (404) and a flexible member (408). The spring is arranged to support the piston along a direction with a positive stiffness. The flexible member is arranged to apply a force to the piston along the direction via the connecting member with a negative stiffness.

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Abstract: A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Abstract: Embodiments of the present disclosure provide methods for processing a substrate using a measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective zones of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.