Abstract: Disclosed herein is a method of measuring a pattern on a substrate comprising: preparing a substrate having a relief pattern comprising organic or inorganic material; directing an excitation light to the relief pattern on the substrate to emit a fluorescent light from the relief pattern; detecting an intensity of the fluorescent light emitted from the relief pattern; and determining a volume of the relief pattern on the substrate based on the detected intensity of the fluorescent light.

Abstract: To efficiently search a processing condition of giving a desired target processing result, there is provided a processing condition determination system including a processing apparatus that processes a sample, a processing monitor system that monitors the state of the processing in the processing apparatus, and an analysis system that sets the processing condition of the processing apparatus of giving a target processing result, wherein the system includes a processing condition and result database that stores a set of an explanatory variable that is a processing condition under which the processing apparatus processes a sample and an objective variable that is the processing result obtained by the processing apparatus' processing the sample, and when the processing apparatus processes the sample under the processing condition set using the correlation model derived from the database and it is determined that a probability of failure occurrence becomes high, based on the monitor data of the processing monito

Abstract: A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Abstract: A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.

Abstract: Methods and arrangement for clamping substrates to a support using adhesive material area disclosed. The method comprises providing a support comprising a first surface defining a plane; applying adhesive material on at least portions of the first surface; and placing the substrate onto the adhesive material, wherein the adhesive material forms a plurality of support locations supporting the substrate. Preferably the adhesive material is cured at least partly during the application of a substantially uniformly distributed force to the substrate in the direction of the support. The arrangements comprise a support comprising a first surface, for supporting the substrate via adhesive material, whereby the first surface defines a plane. Preferably it also comprises an arrangement for providing electromagnetic radiation, thermal energy, and/or a chemical substance to the adhesive material, and an arrangement for providing a substantially uniformly distributed force to the substrate in the direction of the support.

Abstract: A connecting device for inspection includes optical probes, and a probe head including a plurality of guide plates. The probe head includes a first guide plate, and a second guide plate arranged movably with respect to the first guide plate in a radial direction of the penetration holes in a state in which the optical probes are inserted to the respective penetration holes. The probe head holds the optical probes by inner wall surfaces of the penetration holes of the first guide plate and inner wall surfaces of the penetration holes of the second guide plate in a state in which the positions of the central axes of the penetration holes of the first guide plate are shifted in the radial direction from the positions of the central axes of the penetration holes of the second guide plate.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: The invention provides an assembly comprising a cryostat (6, 7, 8, 9) and a flat coil layer (3) of superconducting coils (2) for use with a magnetic levitation and/or acceleration motor system (1) of a lithographic apparatus. The cryostat comprises two insulation coverings (8, 9). The coil layer is arranged between the two coverings. The coverings each comprise an inner plate (10) configured to be cryocooled and an outer plate (11) parallel to the inner plate, and an insulation system with a vacuum layer (13) between the inner and outer plate. The insulation system of said covering comprises a layer of circular bodies (101), the central axes of these bodies extending perpendicular to the inner and outer plate, and is configured to provide a layer of point contacts between two layers of circular bodies or between a layer of circular bodies and the inner and/or outer plate.

Abstract: A measurement apparatus for measuring a height position of an object is provided. The apparatus comprises a light projector that projects measurement light onto the object, a light receiver that receives the measurement light reflected by the object, and a processor that determines a height position of the object based on an image of the measurement light received by the light receiver. The light projector projects a coarse detection pattern and a fine detection pattern having a periodic pattern onto the object, and the processor determines a coarse detection value of a height position of the object based on the coarse detection pattern received by the light receiver, and determines a fine detection value of a height position of the object based on the coarse detection value and the fine detection pattern received by the light receiver.

Abstract: A method of operating a semiconductor apparatus includes generating an electric field in peripheral areas of a first covering structure and a second covering structure; causing a photomask to move to a position between the first and second covering structures such that the photomask at least partially vertically overlaps the first and second covering structures and such that particles attached to the photomask are attracted to the first and second covering structures by the electric field; and irradiating the photomask with light through light transmission regions of the first and second covering structures.

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including a main body having a main body surface; a plurality of burls projecting from the main body surface to support the substrate spaced apart from the main body surface; and a liquid control structure provided in a peripheral region of the main body surface and configured to cause liquid to preferentially flow toward the periphery of the main body surface.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: An illustrative device disclosed herein includes a plate and a reticle pod receiving structure on the front surface of the plate that at least partially bounds a reticle pod receiving area on the front surface. In this example, the back surface of the plate has a pin engagement structure that is adapted to engage a plurality of pins and a fluid flow channel that is adapted to allow fluid communication with an interior region of a reticle pod when the reticle pod is positioned in the reticle pod receiving area.

Abstract: A conveyance apparatus for conveying a substrate chuck includes a hand for supporting the substrate chuck, a main body for pivotally supporting the hand about a vertical axis and movable in horizontal and vertical directions, and a guiding portion for guiding pivotal motion of the hand. The hand includes hand distal end portions and a hand proximal end portion supported by the main body. An end surface of the hand proximal end portion facing the main body is formed in an arc shape of a circle centered about a vertical axis of a reference position between the hand distal end portions. The guiding portion includes a guiding surface that has a shape corresponding to the end surface of the hand proximal end portion and can slidably contact the end surface.

Abstract: Methods of autonomous diagnostic verification and detection of defects in the optical components of a vision-based inspection system are provided. The method includes illuminating a light panel with a first light intensity pattern, capturing a first image of the first light intensity pattern with a sensor, illuminating the light panel with a second light intensity pattern different than the first light intensity pattern, capturing a second image of the second light intensity pattern with the sensor, comparing the first image and the second image to generate a comparison of images, and identifying defects in the light panel or the sensor based upon the comparison of images. Systems adapted to carry out the methods are provided as are other aspects.

Abstract: The invention provides a stage apparatus, comprising an object support comprising a ring shaped protrusion having an outer radius in a first plane, and configured to support an object with a radius in the first plane larger than the outer radius of the ring shaped protrusion. The stage apparatus further comprises a sensor module configured to detect the object support, and the object when it is arranged on the object support. The stage apparatus further comprises a processing unit configured to receive one or more signals from the sensor module, and to determine, based on said one or more signals, a position of the object relative to the ring shaped protrusion when the object is arranged on the object support. The processing unit is further configured to determine, based on said position of the object, an offset value representing the position of the object relative to the ring shaped protrusion.

Abstract: A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.

Abstract: Disclosed is a projection system for a lithographic apparatus, comprising: a plurality of optical elements configured to direct a beam along a path, and a control system configured to receive an input signal indicative of a deformation of a first optical element of the plurality of optical elements. The plurality of optical elements may be configured to position the beam onto an object arranged on an object support, and a pattern may be imparted on the beam by a patterning device arranged on support structure. The control system is configured to generate an output signal for controlling a position of at least a second optical element of the plurality of optical elements, based on said input signal; and/or an output signal for controlling a position of said object support, based on said input signal; and/or an output signal for controlling a position of said support structure, based on said input signal.