Abstract: A light emitting package is provided, the light emitting package includes a carrier having a main part that has multiple chip bonding regions, and each the chip bonding regions has two neighboring conductive parts. An insulating part is disposed on the main part and portion of the two neighboring conductive parts, and multiple hollow-out structures are formed by the insulating part and corresponded in position to the chip bonding regions. Each of the hollow-out structures has a side wall that surrounds the chip bonding regions, and the portion of the tops of the two neighboring conductive parts are exposed from a bottom portion of the hollow-out structure, and multiple light emitting chips are disposed onto the chip bonding surfaces.

Abstract: A light-emitting module according to an embodiment includes a plurality of light-emitting elements, light-guiding plates each having a light-exiting surface, and a wiring layer connected to electrodes of the plurality of light-emitting elements on a surface opposite to the light-exiting surface. The wiring layer includes a first terminal, a second terminal, a first wiring pattern connecting the first terminal and the second terminal, a second wiring pattern connecting the first terminal and the second terminal, a third wiring pattern disposed between the first wiring pattern and the second wiring pattern to connect the first terminal and the second terminal, a fourth wiring pattern connecting the first to third wiring patterns in parallel, the fourth wiring pattern being connected to the first terminal, and a fifth wiring pattern connecting the first to third wiring patterns in parallel, the fifth wiring pattern being connected to the second terminal.

Abstract: A display module is provided. The display module includes a substrate including a thin film transistor (TFT) layer including a plurality of TFTs, a plurality of light emitting diodes (LEDs) arranged on a front surface of the substrate, each LED corresponding to a respective TFT, and an operation driver that is connected to a rear surface of the substrate and controls an operation of the TFTs. The substrate includes a plurality of first via holes extending in a vertical direction from the front surface of the substrate to the rear surface of the substrate. The first via holes are filled with conductive materials and are distributively arranged based on at least one of the columns or rows of the plurality of LEDs. The first via holes connect the TFTs to the operation driver.

Abstract: A light-emitting package structure and a manufacturing method thereof are provided. The light-emitting package structure includes a driving device and at least one light-emitting chip. The driving device includes a driving chip and a redistribution layer structure formed over the driving chip. The driving chip has a first surface and a second surface opposite to the first surface. The redistribution layer structure includes a plurality of first conductive pads disposed on the first surface and a plurality of second conductive pads disposed on the second surface, and one of the first conductive pads is electrically connected to one of the second conductive pads. The at least one light-emitting chip is disposed on the first surface of the driving chip and electrically connected to the driving chip through the first conductive pads.

Abstract: Apparatus, systems, methods, and articles of manufacture to generate, trap, and convert light using a micro light emitting diode (LED) or similar device are disclosed. An example apparatus includes a first mirror to reflect a first wavelength light and a second wavelength light. The example apparatus includes a micro LED on the first mirror, the micro LED to generate the first wavelength light. The example apparatus includes a quantum dot film on the micro LED, the quantum dot film to convert the first wavelength light to the second wavelength light. The example apparatus includes a second mirror on the quantum dot film, the second mirror to reflect the first wavelength light and transmit the second wavelength light.

Abstract: The present invention provides a display panel and a display device. The display panel divides a driving circuit of a driving circuit layer into a first portion, a second portion, and a connecting portion. The first portion and the second portion are on opposite sides of a substrate. A projection region of the second portion on the substrate is located in a projection region of the first portion on the substrate. Therefore, the second portion is located in a display region, a connecting region of external wires which cannot display is eliminated, and a bezel of the display panel is eliminated.

Abstract: A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

Abstract: A display device includes: a substrate on which a plurality of islands and a plurality of bridges connecting the plurality of islands to each other are defined; a plurality of pixels disposed in each of the plurality of islands; and a wire disposed in each of the plurality of bridges and connected to the plurality of pixels, where the plurality of islands and the plurality of bridges are defined based on cutout portions of the substrate, and a vertex of a cutout portion between one of the plurality of islands and a bridge connected to the one of the plurality of islands is an intersection of a straight line and a curved line.

Abstract: A semiconductor device includes a first interconnect structure over first substrate, a first bonding layer over the first interconnect structure, multiple first bonding pads disposed in a first region of the first bonding layer, the first bonding pads having a first pitch, and multiple second bonding pads disposed in a second region of the first bonding layer, the second region extending between a first edge of the first bonding layer and the first region, the second bonding pads having the first pitch, the multiple second bonding pads including multiple pairs of adjacent second bonding pads, wherein the second bonding pads of each respective pair are connected by a first metal line.

Abstract: A display device includes: a substrate including a pixel; a scan line for supplying a scan signal to the pixel; a data line for supplying a data signal to the pixel; a first power line for supplying a first driving power source to the pixel; a second power line for supplying a second driving power source to the pixel; and a third power line for supplying a ground voltage to the pixel. The pixel includes: first and second electrodes spaced apart from each other on the substrate; a plurality of light emitting elements, each of the light emitting elements having first and second end portions in a length direction thereof and being arranged between the first electrode and the second electrode; and a first switch electrically connected between the third power line and the first electrode. The first switch is configured to be turned on by a control signal.

Abstract: A microelectronic device comprises a stack structure, a stadium structure within the stack structure, a source tier underlying the stack structure, and a masking structure. The stack structure has tiers each comprising a conductive structure and an insulating structure. The stadium structure comprises a forward staircase structure, a reverse staircase structure, and a central region horizontally interposed between the forward staircase structure and the reverse staircase structure. The source tier comprises discrete conductive structures within horizontal boundaries of the central region of the stadium structure and horizontally separated from one another by dielectric material. The masking structure is confined within the horizontal boundaries of the central region of the stadium structure and is vertically interposed between the source tier and the stack structure.

Abstract: Provided is a memory device including a substrate, a stack structure, a first set of vertical channel structures, a second set of vertical channel structures, and a first slit. The stack structure is disposed on the substrate. The first and second sets of vertical channel structures are arranged along a Y direction and penetrate through the stack structure to contact the substrate. The first slit is disposed between the first and second sets of vertical channel structures, and penetrates through the stack structure to expose the substrate. The first slit includes a plurality of first sub-slits discretely disposed along a X direction.

Abstract: A method of manufacturing a light-emitting device includes: providing an intermediate structure including: layered bodies in a light-reflective member, a semiconductor layered body, and a light-transmissive member; forming at least one first groove at a first surface of the intermediate structure; forming at least one electrically conductive film, each disposed on the first surface and inside a respective one of the at least one first groove; exposing a portion of the light-reflective member in an inter-electrode region; forming a hole having a width equal to or greater than a width of the at least one first groove and having a depth equal to or greater than a depth of the at least one first groove; and cutting the light-reflective member and the at least one electrically conductive film along the at least one first groove to obtain a plurality of light-emitting devices.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.

Abstract: Gate-all-around (GAA) device and the manufacturing method thereof are disclosed herein. An exemplary integrated circuit (IC) device comprises a first nanostructure and a second nanostructure formed on a substrate, wherein each of the first nano structure and the second nanostructure includes a plurality of semiconductor layers and each of the first nanostructure and the second nanostructure includes a channel region and a source/drain (S/D) region; a first gate structure wrapping the plurality of semiconductor layers of the first nanostructure and a second gate structure wrapping the plurality of semiconductor layers of the second nanostructure; and a S/D contact that contacts at least one of the plurality of semiconductor layers of the first nanostructure and at least one of the plurality of semiconductor layers of the second nanostructure.

Abstract: Provided is a three-dimensional semiconductor memory device include a first stack structure and a second stack structure adjacent to each other on a substrate, a first common source plug between the first stack structure and the second stack structure, a second common source plug between the first stack structure and the second stack structure, and a vertical dielectric structure between the first common source plug and the second common source plug. Each of the first stack structure and the second stack structure may include a plurality of insulation layers and a plurality of electrodes alternately stacked on the substrate. The first common source plug may be connected to the substrate. The second common source plug may be spaced apart from the substrate.

Abstract: An integrated circuit package includes a substrate, a flip chip die, and a capacitor. The flip chip die is attached to the substrate via die-to-substrate interconnects. The capacitor is attached to the flip chip die via capacitor-to-die interconnects so that the capacitor occupies a region between the flip chip die and the substrate. Such placement of the capacitor on a flip chip die has the advantage of reducing the distance between the capacitor and its core, thereby reducing unwanted line inductance and series resistance effects. Integrated circuit performance is thereby enhanced.

Abstract: A method of mounting semiconductor elements, including stretching a stretchable film against an elastic force into a stretched state and disposing a plurality of semiconductor elements in predetermined regions on the stretchable film in the stretched state. Each of the predetermined regions have a predetermined group of semiconductor elements spaced apart from one other at a first distance. The stretchable film is released from the stretched state by using the elastic force of the stretchable film. The first distance between adjacent semiconductor elements in each of the predetermined regions at the time of disposing the semiconductor elements on the stretchable film in the stretched state is reduced to a predetermined second distance of a predetermined mounting distance after releasing the stretchable film from the stretched state.

Abstract: A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

Abstract: A display device includes a substrate. A first electrode, a second electrode, and a third electrode are on the substrate, and are sequentially arranged along a first direction. A first light emitting element is located between the first electrode and the second electrode. A second light emitting element is located between the second electrode and the third electrode. A first contact electrode overlaps the first electrode and one end of the first light emitting element, and is in contact with the first electrode and the one end of the first light emitting element. A second contact electrode overlaps and is in contact with the other end of the first light emitting element. A third contact electrode overlaps and is in contact with the second electrode and the other end of the second light emitting element. The second contact electrode extends while detouring the third contact electrode.