Abstract: In one instance, a semiconductor package includes a metal leadframe having a first plurality of openings extending partially into the leadframe from the first side and a second plurality of openings extending partially into the leadframe from the second side together forming a plurality of leads. A pre-mold compound is positioned in the second plurality of openings that at least partially supports the plurality of leads. The semiconductor package has a plurality of bumps extending from the landing sites to a semiconductor die and a molding compounding at least partially covering the plurality of bumps and the metal leadframe. Other packages and methods are disclosed.

Abstract: The present disclosure provides for integrated cooling systems including an integrated cooling assembly. The integrated cooling assembly includes a semiconductor device having an active side and a backside opposite the active side. The integrated cooling assembly includes a plurality of stacked and bonded layers that collectively form a cold plate, the cold plate comprising (i) a first side and a second side opposite the first side, the first side having a base surface, a support feature that extends downwardly from the base surface, and sidewalls that extend downwardly from the base surface and surround base surface and the support feature, and (ii) a first interconnect vertically disposed through the support feature, where the first interconnect is electrically coupled to the semiconductor device through direct hybrid bonds formed between the cold plate and the semiconductor device.

Abstract: In one instance, a method of forming a semiconductor package with a leadframe includes cutting, such as with a laser, a first side of a metal strip to a depth D1 according to a cutting pattern to form a first plurality of openings, which may be curvilinear. The method further includes etching the second side of the metal strip to a depth D2 according to a photoresist pattern to form a second plurality of openings. At least some of the first plurality of openings are in fluid communication with at least some of the second plurality of openings to form a plurality of leadframe leads. The depth D1 is shallower than a height H of the metal strip, and the depth D2 is also shallower than the height H. Other embodiments are presented.

Abstract: A device package comprising a cooling system. The cooling system comprises a first substrate, a first semiconductor device located on a first region of the first substrate, a second semiconductor device located on a second region of the first substrate, a first cold plate attached to the first semiconductor device, a second cold plate attached to the second semiconductor device, and a manifold having a first chamber volume and a second chamber volume. The first chamber volume comprises a first inlet coupled to a first coolant line, a first outlet coupled to the first cold plate, and a second outlet coupled to the second cold plate. The second chamber volume comprises a third outlet coupled to a second coolant line, a second inlet coupled to the first cold plate, and a third inlet coupled to the second cold plate.

Abstract: A dicing die attach film, including an adhesive layer and a temporary-adhesive layer, the adhesive layer and the temporary-adhesive layer being laminated, wherein the adhesive layer is a film-like adhesive layer containing an epoxy resin (A), an epoxy resin curing agent (B), a phenoxy resin (C), and an inorganic filler (D); an elastic modulus of the phenoxy resin (C) at 25° C. is 500 MPa or more; in the adhesive layer, a proportion of the phenoxy resin (C) in total content of the epoxy resin (A) and the phenoxy resin (C) is 10 to 60% by mass; a peeling strength between the adhesive layer and the temporary-adhesive layer at a range of 25 to 80° C. is 0.40 N/25 mm or less; and a thermal conductivity of the adhesive layer after thermal curing is 1.0 W/m·K or more.

Abstract: A semiconductor package including: a redistribution layer including redistribution line patterns, redistribution vias connected to the redistribution line patterns, and a redistribution insulating layer surrounding the redistribution line patterns and the redistribution vias; semiconductor chips including at least one upper semiconductor chip disposed on a lowermost semiconductor chip of the semiconductor chips, wherein the at least one upper semiconductor chip is thicker than the lowermost semiconductor chip; bonding wires each having a first end and a second end, wherein the bonding wires connect the semiconductor chips to the redistribution layer, wherein the first end of each of the bonding wires is connected to a respective chip pad of the semiconductor chips and the second end of each of the bonding wires is connected to a respective one of the redistribution line patterns; and a molding member surrounding, on the redistribution layer, the semiconductor chips and the bonding wires.

Abstract: A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

Abstract: A dual-side cooling (DSC) semiconductor package includes a first metal-insulator-metal (MIM) substrate having a first insulator layer, first metallic layer, and second metallic layer. A second MIM substrate includes a second insulator layer, third metallic layer, and fourth metallic layer. The third metallic layer includes a first portion having a first contact area and a second portion, electrically isolated from the first portion, having a second contact area. A semiconductor die is coupled with the second metallic layer and is directly coupled with the third metallic layer through one or more solders, sintered layers, electrically conductive tapes, solderable top metal (STM) layers, and/or under bump metal (UBM) layers. The first contact area is electrically coupled with a first electrical contact of the die and the second contact area is electrically coupled with a second electrical contact of the die. The first and fourth metallic layers are exposed through an encapsulant.

Abstract: A method may include forming a cavity within a plastic structure with a channel positioned at a perimeter of the cavity, inserting the electronic component into the cavity, dispensing a dielectric fluid into the channel at the perimeter of the cavity, curing the dielectric fluid in situ to secure the electronic component within the cavity with a cured dielectric and printing interconnects for the electronic component.

Abstract: A display area of the array substrate only includes first sub-pixels capable of emitting light. In each two adjacent rows of first sub-pixels, a gate line electrically connected to one row of the plurality of rows of first sub-pixels and a reset signal line electrically connected to another row of the plurality of rows of first sub-pixels are electrically connected to the same first gate drive circuit. A target line electrically connected to a first row of the plurality of rows of first sub-pixels (i.e., another line other than the line electrically connected to the first gate drive circuit) is electrically connected to a second gate drive circuit. A target line electrically connected to a last row of the plurality of rows of first sub-pixels (i.e., another line other than the line electrically connected to the first gate drive circuit) is electrically connected to a third gate drive circuit.

Abstract: A semiconductor device includes: a wiring substrate; a semiconductor chip mounted on the wiring substrate; a heat release sheet arranged on the semiconductor chip to cover the entire semiconductor chip and having a larger area than an area of the semiconductor chip; and a cover member which covers the semiconductor chip and the heat release sheet and to which the heat release sheet is fixed. The cover member has a first portion facing the semiconductor chip, a flange portion arranged in a periphery of the first portion and bonded and fixed onto the wiring substrate, and a second portion arranged between the first portion and the flange portion. In a plan view of the cover member viewed from the heat release sheet, the heat release sheet is bonded/fixed to the cover member through a bonding member partially arranged between the heat release sheet and the cover member.

Abstract: A semiconductor package structure includes a package substrate; a semiconductor chip on the package substrate and electrically connected to the package substrate; an interposer substrate above the package substrate and the semiconductor chip, wherein the interposer substrate includes a cavity recessed inward from a lower surface thereof, wherein the semiconductor chip is positioned within the cavity, at least from a plan view; and an adhesive layer positioned inside and outside the cavity, wherein the adhesive layer is formed on all of upper and side surfaces of the semiconductor chip, or on the side surfaces of the semiconductor chip.

Abstract: A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k?1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k+1th semiconductor chip when k is 1.

Abstract: A semiconductor package structure includes a substrate having a substrate having a first surface and second surface opposite thereto, wherein the substrate comprises a wiring structure. The structure also has a first semiconductor die disposed on the first surface of the substrate and electrically coupled to the wiring structure, and a second semiconductor die disposed on the first surface and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged in a side-by-side manner. A molding material surrounds the first semiconductor die and the second semiconductor die, wherein the first semiconductor die is separated from the second semiconductor die by the molding material. Finally, an annular frame mounted on the first surface of the substrate, wherein the annular frame surrounds the first semiconductor die and the second semiconductor die.

Abstract: A multi-chip package including a first integrated circuit and a second integrated circuit. The first integrated circuit includes a first side having a first conductive layer, a second side having a second conductive layer, and an edge, the first conductive layer coupled to the second conductive layer at a location adjacent to the edge. The second integrated circuit is coupled to the second conductive layer of the first integrated circuit.

Abstract: The present invention includes: a position detection unit (55) detecting positions of semiconductor chips and storing each detected position in a position database (56); a position correction unit (57) outputting a corrected bonding position; and a bonding control unit (58) performing bonding of the semiconductor chips based on the corrected bonding position input from the position correction unit (57). The position correction unit (57) calculates position shift amounts between the semiconductor chips of respective stages and an accumulated position shift amount, and when the accumulated position shift amount is greater than or equal to a predetermined threshold value, corrects the position of the semiconductor chip by the accumulated position shift amount and outputs it as the corrected bonding position, and the bonding control unit (58) performs bonding of the semiconductor chip of the next stage at the corrected bonding position input from the position correction unit.

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

Abstract: The present application discloses a semiconductor device with integrated decoupling alignment features. The semiconductor device includes a first wafer comprising a first substrate having a dielectric stack, a decoupling feature positioned in the dielectric stack under one of the plurality of first alignment marks, a plurality of first alignment marks positioned on the first substrate and parallel to each other; and a second wafer positioned on the first wafer and comprising a plurality of second alignment marks positioned above the plurality of first alignment marks. The plurality of second alignment marks are arranged parallel to the plurality of first alignment marks and adjacent to the plurality of first alignment marks in a top-view perspective. The plurality of first alignment marks and the plurality of second alignment marks comprise a fluorescence material. The decoupling feature has a bottle-shaped cross-sectional profile, and the decoupling feature comprises a porous low-k material.

Abstract: The present disclosure provides a three-dimensional stacked fan-out packaging structure and a method making the same. The structure includes: a first semiconductor chip, a first packaging material layer, a metal connecting pillar, a first rewiring layer, a second rewiring layer, a second semiconductor chip, solder ball bumps, an underfill layer under the second semiconductor chip, and a second packaging material layer. The formed three-dimensional stacked fan-out packaging structure can package two sets of fan-out wafers in the three-dimensional direction. A single package stacked up after die-cutting has two sets of chips in the third-direction. The electrical signals of all chips in a single package can be controlled by arranging a first rewiring layer, a metal connecting post, and the second rewiring layer, so that more chips can be packaged in a single package, the integration of the package is improved, and the package volume can shrink.

Abstract: A component mounting system and a method for inspecting mounted components are provided. A component mounting system according to an embodiment, comprises a solder inspection apparatus comparing coordinate information of the solder, which is obtained through measurement of a substrate to which solder is applied, with reference coordinate information to generate coordinate correction data; and a first mounting inspection apparatus comparing a first measurement data obtained by measuring mounting state of a component when the component is mounted based on the coordination correction data through a component mounting apparatus, with the coordinate correction data to verify whether a component is mounted on a position corrected based on the coordinate correction data. In this manner, by adding the verification function for the performance function of the component mounting apparatus to the inspection apparatus, it is possible to monitor the operation state of the component mounting apparatus in each process step.