Abstract: Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

Abstract: An integrated circuit (IC) package product, e.g., system-on-chip (SoC) or system-in-package (SiP) product, may include at least one integrated inductor having a core magnetic field (B field) that extends parallel to the substrate major plane of at least one die or chiplet included in or mounted to the product, which may reduce the eddy currents within each die/chiplet substrate, and thereby reduce energy loss of the indictor. The IC package product may include a horizontally-extending IC package substrate, a horizontally-extending die mount base arranged on the IC package substrate, at least one die mounted to the die mount base in a vertical orientation, and an integrated inductor having a B field extending in a vertical direction parallel to the silicon substrate of each vertically-mounted die, thereby providing a reduced substrate loss in the integrated inductor, which provides an increased quality factor (Q) of the inductor.

Abstract: A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.

Abstract: A power module includes a power semiconductor device, a first power lead electrically connected to a first power terminal of the power semiconductor device, a second power lead disposed in parallel to the first power lead near the first power lead and electrically connected to a second power terminal of the power semiconductor device, and a conductive plate disposed to be spaced apart from the first power lead or the second power lead by a predetermined distance such that a region overlapping with the first power lead or the second power lead is formed.

Abstract: A packaged semiconductor device is provided. The packaged semiconductor device includes a semiconductor die affixed to a package substrate. A conductive connector is affixed to the package substrate. A collar is formed around a perimeter of the conductive connector at a conductive connector to package substrate transition. A reinforcement structure is embedded in the collar. The reinforcement structure substantially surrounds the conductive connector at the conductive connector to package substrate transition.

Abstract: In a layered bonding material 10, a coefficient of linear expansion of a base material 11 is 5.5 to 15.5 ppm/K and a first surface and a second surface of the base material 11 are coated with pieces of lead-free solder 12a and 12b.

Abstract: A MicroElectroMechanical System is provided, with an active element configured to carry out an electromechanical function, the active element including, from an upper face to a lower face substantially parallel to the upper face, an active layer, a core layer, and a retention layer, the active layer being configured to, under the effect of a first electric signal, go into a mechanically stressed state, configured to generate a bending of the active element in a direction perpendicular to a front face thereof, and vice versa, the active layer, the core layer, and the retention layer being arranged so that a neutral axis, associated with an elongation of zero in a case of bending of the active element, is located in a volume of one or the other of the core layer and of the retention layer, and the core layer further includes at least 20% recesses in its volume.

Abstract: The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

Abstract: A method for manufacturing an electronic component includes preparing a mounting substrate provided with a first region to mount an electronic component thereon and a second region having conductivity, covering the second region with resin, applying a metal paste on the first region, mounting the electronic component on the first region with the metal paste, and removing the resin covering the second region. The mounting includes heating the mounting substrate to cure the metal paste with the electronic components being placed on the metal paste applied on the first region. The resin peeled from the second region by the heating is removed in the removing.

Abstract: A semiconductor device assembly includes a first remote distribution layer (RDL), the first RDL comprising a lower outermost planar surface of the semiconductor device assembly; a first semiconductor die directly coupled to an upper surface of the first RDL by a first plurality of interconnects; a second RDL, the second RDL comprising an upper outermost planar surface of the semiconductor device assembly opposite the lower outermost planar surface; a second semiconductor die directly coupled to a lower surface of the second RDL by a second plurality of interconnects; an encapsulant material disposed between the first RDL and the second RDL and at least partially encapsulating the first and second semiconductor dies; and a third plurality of interconnects extending fully between and directly coupling the upper surface of the first RDL and the lower surface of the second RDL.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a first memory cell, a first bit line, a first word line, a first transistor, and a second transistor. The first memory cell is provided above the substrate. The first bit line extends in a first direction. The first bit line is coupled to the first memory cell. The first word line extends in a second direction intersecting the first direction. The first word line is coupled to the first memory cell. The first transistor is provided on the substrate. The first transistor is coupled to the first bit line. The second transistor is provided below the first memory cell and on the substrate. The second transistor is coupled to the first word line.

Abstract: The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a package substrate, a bottom device die, an interposing package substrate and a top device die. The bottom device die is bonded to the package substrate. The interposing package substrate is located over the bottom device die and bonded to the package substrate. The top device die is bonded to the interposing package substrate form above the interposing package substrate.

Abstract: A semiconductor assembly includes a first die and a second die. The semiconductor assembly also includes a film on die (FOD) layer configured to attach the first die to the second die. The FOD layer is disposed on a first surface of the first die. The FOD layer includes a first portion comprising a first die attach film (DAF) disposed on an inner region of the first surface. The FOD layer also includes a second portion that includes a second DAF disposed on a peripheral region of the first surface surrounding the inner region. The second DAF includes a different material than the first DAF.

Abstract: A semiconductor module includes a main board and external terminals. A package substrate includes a core insulation layer, a conductive pattern disposed in the core insulation layer and electrically connected with the external terminals, an upper insulation pattern and a lower insulation pattern. At least one semiconductor chip is disposed on an upper surface of the package substrate and is electrically connected with the conductive pattern. A shielding plate is disposed on a molding member and lateral side surfaces of the package substrate and shields electromagnetic interference (EMI) emitted from the semiconductor chip. A shielding fence extends from an edge portion of a lower surface of the lower insulation pattern and directly contacts the upper surface of the main board. The shielding fence surrounds the external terminals and shields EMI emitted from the external terminals. A reinforcing member increases a strength of the shielding fence.

Abstract: A semiconductor package has a substrate, a chip and an encapsulation. The substrate has a dielectric layer, a copper wiring layer and a solder resist layer formed thereon. The copper wiring layer is formed on the dielectric layer and is covered by the solder resist layer. The solder resist layer has a chip area defined thereon and an annular opening formed thereon. The annular opening surrounds the chip area and exposes part of the copper wiring layer. The chip is mounted on the chip area and is encapsulated by the encapsulation. Therefore, the semiconductor package with the annular opening makes the solder resist layer discontinuous, and the concentration stress is decreased to avoid a crack formed on the solder resist layer or the copper wiring layer when doing thermal-cycle test.

Abstract: An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

Abstract: A semiconductor package includes a first sub-semiconductor device, an interposer, and a second sub-semiconductor device stacked on each other, and a heat sink covering the second sub-semiconductor device. The first sub-semiconductor device includes a first substrate and a first semiconductor chip. The interposer includes a dielectric layer, a thermal conductive layer in contact with a bottom surface of the dielectric layer, a first thermal conductive pad in contact with a top surface of the dielectric layer, and thermal conductive vias penetrating the dielectric layer to connect the thermal conductive layer to the first thermal conductive pad. A bottom surface of the thermal conductive layer is adjacent to and connected to a top surface of the first semiconductor chip. The second sub-semiconductor device is disposed on the dielectric layer without overlapping the first thermal conductive pad. The heat sink further covers the first thermal conductive pad to be connected thereto.

Abstract: A package includes a first molding material, a lower-level device die in the first molding material, a dielectric layer over the lower-level device die and the first molding material, and a plurality of redistribution lines extending into the first dielectric layer to electrically couple to the lower-level device die. The package further includes an upper-level device die over the dielectric layer, and a second molding material molding the upper-level device die therein. A bottom surface of a portion of the second molding material contacts a top surface of the first molding material.

Abstract: A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

Abstract: A semiconductor package structure includes a substrate, a first redistribution layer, a second redistribution layer, a bridge structure, a first semiconductor component, and a second semiconductor component. The first redistribution layer is over the substrate. The second redistribution layer is over the first redistribution layer. The bridge structure is between the first redistribution layer and the second redistribution layer, wherein the bridge structure includes an active device. The first semiconductor component and the second semiconductor component are located over the second redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the second redistribution layer and the bridge structure.