Abstract: A molybdenum sputtering target assembly includes molybdenum sputtering target diffusion bonded directly to a molybdenum backing plate. The molybdenum sputtering target consists of molybdenum and the molybdenum backing plate consists of molybdenum or a molybdenum alloy.

Abstract: In a surface treatment apparatus, a conveyance device houses a placement device having a treated member placed thereon, into a housing unit. A rotation device rotates the treated member to face a direction facing a surface treatment device in a predetermined rotation pattern, in a state in which the placement device is housed in the housing unit.

Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

Abstract: An apparatus for manufacturing a display device includes a mask assembly, and a deposition source that supplies a deposition material toward the mask assembly. The mask assembly includes a mask frame including a first opening, a sheet portion fixed on the mask, overlapping a portion of the first opening in a plan view, and including a plurality of second openings, a plurality of first masks corresponding to the plurality of second openings and fixed on the sheet portion, each including a plurality of third openings, and a second mask arranged on another portion of the first opening defined by an edge of the sheet portion and inner surfaces of the first opening, fixed on the mask frame, and including a plurality of fourth openings.

Abstract: A system for roll-to-roll deposition is described wherein the system comprises a substrate transport system comprising a static elongated central cylinder for helical transport of a flexible substrate arranged around the cylinder, the cylinder comprising bearing structures arranged in or arranged on the surface of the cylinder for frictionless or low-friction transport of the flexible substrate over the surface of the central cylinder; and, one or more atomic layer deposition ALD deposition heads, an ALD deposition head being configured as a hollow cylinder, the inner surface of a processing head including deposition structures for depositing atomic layers onto the flexible substrate; wherein the inner radius of a deposition head is larger than the outer radius of the central cylinder, the one or more deposition heads being configured to rotate around the central cylinder, wherein the longitudinal axis of a processing head coincides with the longitudinal axis of the central cylinder.

Abstract: An apparatus, method, and computer-readable storage medium for magnetron sputtering for thin film deposition. The apparatus may include a chamber for thin film deposition, configured to house a target configured to be held by a target holder, and a pedestal configured to support a substrate, and arranged opposite to the target; a magnetron configured to generate a magnetic field around a surface of the target, for electron confinement, and to facilitate ignition and maintenance of plasma; a main power supply, configured to apply power to the target to form an electrical field, the electrical and magnetic fields can convert at least a part of working gas into the plasma, and the electrical field can direct a part of ions in the plasma toward the target; and a resistance measurement meter in electrically connection with each of an electrical ground point and the target, and configured to measure a resistance therebetween.

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: An evaporator assembly for a processing chamber in a substrate processing system comprises a canister configured to store and heat precursor liquid and an evaporator valve block mounted the canister. The evaporator valve block comprises a body, a plurality of valves mounted on the body, a carrier gas inlet in fluid communication with the canister, a precursor liquid inlet in fluid communication with the canister, a vapor port in fluid communication with the canister, and a vapor outlet in fluid communication with the processing chamber. Each of the plurality of valves is in fluid communication with respective flow paths contained within the evaporator valve block.

Abstract: Embodiments disclosed herein include sensor modules. In an embodiment, a module comprises a substrate with a first surface, a second surface opposite from the first surface, and a sidewall surface coupling the first surface to the second surface. In an embodiment, a plurality of sensors are provided around a perimeter of the substrate. In an embodiment, the sensors are configured to measure distances between the sidewall surface and an external object. In an embodiment, the module further comprises a processor communicatively coupled to the plurality of sensors.

Abstract: A mask assembly includes a mask frame having an opening area, and a mask sheet disposed on the mask frame to overlap the opening area, the mask sheet including a first area, and a second area surrounding the first area. The first area includes a first opening pattern that is a half-etched pattern, the second area includes a second opening pattern that is a penetrating pattern, and in a plan view, the first opening pattern and the second opening pattern are different from each other.

Abstract: Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 ?m or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.

Abstract: A substrate processing apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; an exhaust port arranged around the stage along an inner wall of the processing container; a driver configured to move the stage up and down between a processing position and a transfer position lower than the processing position; a clamp ring that is arranged on a peripheral edge of the substrate on the stage to cover the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf provided on a sidewall of the processing container when the stage is at the transfer position; and a pressure regulating mechanism configured to suppress a pressure difference between a space above the substrate on the stage and a space below the stage.

Abstract: There is a method for surface coating using a plasma coating device. The plasma coating device has a vacuum chamber; at least one sputtering source arranged in the vacuum chamber with a target of a solid material; a substrate to be coated; and at least one carrier gas source opening into the vacuum chamber. The method has the following steps: evacuating the vacuum chamber and supplying a carrier gas stream from the carrier gas source to the target such that a plasma with ions from atoms of the carrier gas is produced. The plasma ions dissolve particles out of the solid material of the target, and the dissolved particles are supplied to the surface of the substrate. The carrier gas stream is discontinuously supplied to the target of the sputtering source by modulating the gas flow of the carrier gas stream.

Abstract: A sintered body of an oxide contains an In element, a Ga element, and an Al element, in which an atomic composition ratio of the In element and an atomic composition ratio of the Al element respectively satisfy a formula (1) and a formula (2) below, [ In ] / ( [ In ] + [ Ga ] + [ Al ] ) > 0 .70 ( 1 ) [ Al ] / ( [ In ] + [ Ga ] + [ Al ] ) > 0.01 .

Abstract: Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.

Abstract: A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.

Abstract: A gas distribution assembly for a processing chamber in a substrate processing system includes a gas plate including a plurality of holes configured to supply a gas mixture into an interior of the processing chamber and a carrier ring configured to support the gas plate. The carrier ring includes an annular body and a radially inwardly projecting portion. The radially inwardly projecting portion has a first inner diameter and the annular body has a second inner diameter greater than the first inner diameter, the radially inwardly projecting portion defines a ledge, and the gas plate is arranged on the ledge of the carrier ring. A dielectric window is arranged on the gas plate above the gas plate and the carrier ring such that the gas plate is supported between the carrier ring and the dielectric window.

Abstract: A vacuum layer deposition apparatus includes a vacuum coating chamber with an inner space; a material source to generate electrically positively charged particles of a material to be deposited on a substrate in said inner space; a substrate holder with an extended metal or dielectric material surface exposed to said inner space; and a Rf plasma source comprising: first and second electrodes Rf-connectable or Rf-connected to first and second taps of a Rf generator, respectively. Said first and second electrodes include first and second electrode surfaces, respectively, of metal or of a dielectric material which are freely exposed to said inner space. Said extended surface of said substrate holder is at least a part of said first electrode surface and said second electrode surface is larger than said first electrode surface by at least a factor of 1.5. A method includes vacuum-process depositing a layer on a substrate.

Abstract: A deposition apparatus for depositing a deposition material on a base substrate disposed on a mask, includes: a mask assembly including a mask frame which defines an opening therein and surrounds the opening, and the mask disposed on the mask frame; an electrostatic chuck disposed on the base substrate; and a plate disposed on the electrostatic chuck. The electrostatic chuck includes a plurality of magnetic bodies, and a magnetic property of at least one magnetic body among the plurality of magnetic bodies is different from a magnetic property of remaining magnetic bodies except for the at least one magnetic body among the plurality of magnetic bodies.

Abstract: Embodiments of the present disclosure relate to plate assemblies, process kits, processing chambers, and related components and methods for semiconductor manufacturing. In one implementation, a plate assembly for disposition in a processing chamber includes an inner section that includes an opaque material. The inner section has an outer diameter. The plate assembly includes a first outer section that is arcuate in shape and includes the opaque material. The first outer section includes a first inner shoulder, and a first inner lip extending inwardly relative to the first inner shoulder.