Abstract: The present invention is related to a thermal laser evaporation system (10), the thermal laser evaporation system (10) comprising: a reaction chamber (20) with a chamber wall (30) for enclosing a reaction volume (22); a target (12) arranged in the reaction volume (22), the target comprising one or more materials (M) to be evaporated; a laser light source (40) for providing a thermal laser beam (42) for evaporating said one or more materials (M) from the target (12), the thermal laser beam having a general propagation direction (46); and a chamber window (38) in the chamber wall (30) for conducting the thermal laser beam (42) into the reaction volume (22).

Abstract: A substrate processing apparatus includes a chamber providing a space for performing a semiconductor process on a semiconductor substrate, and a substrate stage configured to support the semiconductor substrate. The substrate stage includes a platen having a seating surface to support the semiconductor substrate, the platen having a resistance heater and an RF electrode adjacent to the seating surface, a shaft under the platen, the shaft having a first through hole in a central region and a plurality of second through holes in a peripheral region surrounding the central region, an RF rod spaced apart from an inner wall of the first through hole, the RF rod electrically connected to the RF electrode, and a plurality of heater rods respectively within the plurality of second through holes and electrically connected to the resistance heater.

Abstract: A method for changing test substrates in a continuous-flow vacuum system in a multiple-treatment-step process cycle for treating a substrate, a treatment method using the method for changing test substrates, and systems for treating a plurality of substrates (61) and for changing test substrates. For at least two treatment steps, at least two test substrates (66) are transferred to a vacuum treatment system at the beginning of the process cycle and are transferred back out once the process cycle is concluded. Subsequently, the first test substrate (66) concurrently treated in this step is removed from the measurement position (70) it occupied during the treatment and is deposited in an empty position (71) without a test substrate (66). Subsequently, the second test substrate (66) which has not been treated yet is deposited in the resulting free measurement position (70) for the purpose of supplying the second test substrate to the subsequent treatment step.

Abstract: A chemical liquid supply equipment includes a casing, a connection module and a chemical drum rotating and conveying module. The casing has a chemical drum accommodating room, the connection module is installed in the chemical drum accommodating room of the casing, and the chemical drum rotating and conveying module is also installed in the chemical drum accommodating room of the casing to transport a chemical drum into the chemical drum accommodating room, and the chemical drum is rotated to align with the connecting module.

Abstract: The present invention discloses a method for forming robust hydrophobic surfaces on a steel workpiece. First, a roughing process is performed on the steel workpiece by removing part of the steel from the surface, so as to form concaves. Second, a depositing process is performed to deposit hydrophobic layers into the concaves, thereby forming the steel workpiece with robust hydrophobic surfaces, exhibiting good abrasion resistance.

Abstract: An atomic layer deposition layer apparatus including a substrate support having a support surface, a precursor supply head having an output face with at least one reaction zone via which precursors are supplied, and a rotating mechanism. The substrate support and the precursor supply head are arranged to be rotated relative to each other with the rotating mechanism. The at least one reaction zone includes a precursor supply zone open to the output face of the precursor supply head for supplying precursor, and a suction zone open to the output face of the precursor supply head and arranged to surround the precursor supply zone at the output face of the precursor supply head.

Abstract: A rotary cathode end block in this application comprises an end case body. A conductive drive shaft is rotatably installed in the end case body through a bearing, and one end of the drive shaft penetrates from the end case body and is fixedly connected with a target installation flange. A conductive central support is fixedly connected to the end case body. The central support is integrally formed with a connection shaft. One end of the connection shaft coaxially passes through the drive shaft and the target installation flange. A non-rotating electrical contact is set on the connection shaft. The central support is electrically connected with the electrical contact. The electrical contact is in contact with the drive shaft, and the contact surface between which is cone-shaped. The advantages of this application are larger transmission power and more reliable structure.

Abstract: A substrate processing device is provided. The substrate processing device includes: a substrate supporter configured to support a substrate; a heating ring horizontally surrounding the substrate supporter; and an edge ring horizontally surrounding the heating ring and configured to cover a top surface of the heating ring.

Abstract: A surface treatment apparatus (10) performs film formation on a surface of a workpiece (W) in a chamber (20), and includes: an HCD electrode (210) (electrode) that supplies reaction gas to the workpiece (W) or a sputtering electrode (220) (electrode) that releases target particles to the workpiece (W), the HCD electrode (210) or the sputtering electrode (220) being placed facing the workpiece (W); a gas supply pipe (90) that is installed along an outer periphery of the electrode and has, along a longitudinal direction of the pipe, a plurality of gas ejection ports (91) through which film-forming gas, or an inert gas or a reactive gas for performing sputtering is supplied to an electrode surface of the electrode; and an exhaust device (51) (gas discharge unit) that discharges residual gas after film formation is ended, and the plurality of gas ejection ports (91) are arranged such that gas supplied from the gas supply pipe (90) is uniformly distributed on the electrode surface of the electrode.

Abstract: A molybdenum sputtering target assembly includes molybdenum sputtering target diffusion bonded directly to a molybdenum backing plate. The molybdenum sputtering target consists of molybdenum and the molybdenum backing plate consists of molybdenum or a molybdenum alloy.

Abstract: In a surface treatment apparatus, a conveyance device houses a placement device having a treated member placed thereon, into a housing unit. A rotation device rotates the treated member to face a direction facing a surface treatment device in a predetermined rotation pattern, in a state in which the placement device is housed in the housing unit.

Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

Abstract: An apparatus for manufacturing a display device includes a mask assembly, and a deposition source that supplies a deposition material toward the mask assembly. The mask assembly includes a mask frame including a first opening, a sheet portion fixed on the mask, overlapping a portion of the first opening in a plan view, and including a plurality of second openings, a plurality of first masks corresponding to the plurality of second openings and fixed on the sheet portion, each including a plurality of third openings, and a second mask arranged on another portion of the first opening defined by an edge of the sheet portion and inner surfaces of the first opening, fixed on the mask frame, and including a plurality of fourth openings.

Abstract: A system for roll-to-roll deposition is described wherein the system comprises a substrate transport system comprising a static elongated central cylinder for helical transport of a flexible substrate arranged around the cylinder, the cylinder comprising bearing structures arranged in or arranged on the surface of the cylinder for frictionless or low-friction transport of the flexible substrate over the surface of the central cylinder; and, one or more atomic layer deposition ALD deposition heads, an ALD deposition head being configured as a hollow cylinder, the inner surface of a processing head including deposition structures for depositing atomic layers onto the flexible substrate; wherein the inner radius of a deposition head is larger than the outer radius of the central cylinder, the one or more deposition heads being configured to rotate around the central cylinder, wherein the longitudinal axis of a processing head coincides with the longitudinal axis of the central cylinder.

Abstract: An apparatus, method, and computer-readable storage medium for magnetron sputtering for thin film deposition. The apparatus may include a chamber for thin film deposition, configured to house a target configured to be held by a target holder, and a pedestal configured to support a substrate, and arranged opposite to the target; a magnetron configured to generate a magnetic field around a surface of the target, for electron confinement, and to facilitate ignition and maintenance of plasma; a main power supply, configured to apply power to the target to form an electrical field, the electrical and magnetic fields can convert at least a part of working gas into the plasma, and the electrical field can direct a part of ions in the plasma toward the target; and a resistance measurement meter in electrically connection with each of an electrical ground point and the target, and configured to measure a resistance therebetween.

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: An evaporator assembly for a processing chamber in a substrate processing system comprises a canister configured to store and heat precursor liquid and an evaporator valve block mounted the canister. The evaporator valve block comprises a body, a plurality of valves mounted on the body, a carrier gas inlet in fluid communication with the canister, a precursor liquid inlet in fluid communication with the canister, a vapor port in fluid communication with the canister, and a vapor outlet in fluid communication with the processing chamber. Each of the plurality of valves is in fluid communication with respective flow paths contained within the evaporator valve block.

Abstract: Embodiments disclosed herein include sensor modules. In an embodiment, a module comprises a substrate with a first surface, a second surface opposite from the first surface, and a sidewall surface coupling the first surface to the second surface. In an embodiment, a plurality of sensors are provided around a perimeter of the substrate. In an embodiment, the sensors are configured to measure distances between the sidewall surface and an external object. In an embodiment, the module further comprises a processor communicatively coupled to the plurality of sensors.

Abstract: A mask assembly includes a mask frame having an opening area, and a mask sheet disposed on the mask frame to overlap the opening area, the mask sheet including a first area, and a second area surrounding the first area. The first area includes a first opening pattern that is a half-etched pattern, the second area includes a second opening pattern that is a penetrating pattern, and in a plan view, the first opening pattern and the second opening pattern are different from each other.

Abstract: Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 ?m or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.