Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: An evaporator assembly for a processing chamber in a substrate processing system comprises a canister configured to store and heat precursor liquid and an evaporator valve block mounted the canister. The evaporator valve block comprises a body, a plurality of valves mounted on the body, a carrier gas inlet in fluid communication with the canister, a precursor liquid inlet in fluid communication with the canister, a vapor port in fluid communication with the canister, and a vapor outlet in fluid communication with the processing chamber. Each of the plurality of valves is in fluid communication with respective flow paths contained within the evaporator valve block.

Abstract: Embodiments disclosed herein include sensor modules. In an embodiment, a module comprises a substrate with a first surface, a second surface opposite from the first surface, and a sidewall surface coupling the first surface to the second surface. In an embodiment, a plurality of sensors are provided around a perimeter of the substrate. In an embodiment, the sensors are configured to measure distances between the sidewall surface and an external object. In an embodiment, the module further comprises a processor communicatively coupled to the plurality of sensors.

Abstract: A mask assembly includes a mask frame having an opening area, and a mask sheet disposed on the mask frame to overlap the opening area, the mask sheet including a first area, and a second area surrounding the first area. The first area includes a first opening pattern that is a half-etched pattern, the second area includes a second opening pattern that is a penetrating pattern, and in a plan view, the first opening pattern and the second opening pattern are different from each other.

Abstract: Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 ?m or less, and the target material has an oxygen concentration of 1000 ppm by mass or less.

Abstract: A substrate processing apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; an exhaust port arranged around the stage along an inner wall of the processing container; a driver configured to move the stage up and down between a processing position and a transfer position lower than the processing position; a clamp ring that is arranged on a peripheral edge of the substrate on the stage to cover the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf provided on a sidewall of the processing container when the stage is at the transfer position; and a pressure regulating mechanism configured to suppress a pressure difference between a space above the substrate on the stage and a space below the stage.

Abstract: There is a method for surface coating using a plasma coating device. The plasma coating device has a vacuum chamber; at least one sputtering source arranged in the vacuum chamber with a target of a solid material; a substrate to be coated; and at least one carrier gas source opening into the vacuum chamber. The method has the following steps: evacuating the vacuum chamber and supplying a carrier gas stream from the carrier gas source to the target such that a plasma with ions from atoms of the carrier gas is produced. The plasma ions dissolve particles out of the solid material of the target, and the dissolved particles are supplied to the surface of the substrate. The carrier gas stream is discontinuously supplied to the target of the sputtering source by modulating the gas flow of the carrier gas stream.

Abstract: A sintered body of an oxide contains an In element, a Ga element, and an Al element, in which an atomic composition ratio of the In element and an atomic composition ratio of the Al element respectively satisfy a formula (1) and a formula (2) below, [ In ] / ( [ In ] + [ Ga ] + [ Al ] ) > 0 .70 ( 1 ) [ Al ] / ( [ In ] + [ Ga ] + [ Al ] ) > 0.01 .

Abstract: Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.

Abstract: A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.

Abstract: A gas distribution assembly for a processing chamber in a substrate processing system includes a gas plate including a plurality of holes configured to supply a gas mixture into an interior of the processing chamber and a carrier ring configured to support the gas plate. The carrier ring includes an annular body and a radially inwardly projecting portion. The radially inwardly projecting portion has a first inner diameter and the annular body has a second inner diameter greater than the first inner diameter, the radially inwardly projecting portion defines a ledge, and the gas plate is arranged on the ledge of the carrier ring. A dielectric window is arranged on the gas plate above the gas plate and the carrier ring such that the gas plate is supported between the carrier ring and the dielectric window.

Abstract: A vacuum layer deposition apparatus includes a vacuum coating chamber with an inner space; a material source to generate electrically positively charged particles of a material to be deposited on a substrate in said inner space; a substrate holder with an extended metal or dielectric material surface exposed to said inner space; and a Rf plasma source comprising: first and second electrodes Rf-connectable or Rf-connected to first and second taps of a Rf generator, respectively. Said first and second electrodes include first and second electrode surfaces, respectively, of metal or of a dielectric material which are freely exposed to said inner space. Said extended surface of said substrate holder is at least a part of said first electrode surface and said second electrode surface is larger than said first electrode surface by at least a factor of 1.5. A method includes vacuum-process depositing a layer on a substrate.

Abstract: A deposition apparatus for depositing a deposition material on a base substrate disposed on a mask, includes: a mask assembly including a mask frame which defines an opening therein and surrounds the opening, and the mask disposed on the mask frame; an electrostatic chuck disposed on the base substrate; and a plate disposed on the electrostatic chuck. The electrostatic chuck includes a plurality of magnetic bodies, and a magnetic property of at least one magnetic body among the plurality of magnetic bodies is different from a magnetic property of remaining magnetic bodies except for the at least one magnetic body among the plurality of magnetic bodies.

Abstract: Embodiments of the present disclosure relate to plate assemblies, process kits, processing chambers, and related components and methods for semiconductor manufacturing. In one implementation, a plate assembly for disposition in a processing chamber includes an inner section that includes an opaque material. The inner section has an outer diameter. The plate assembly includes a first outer section that is arcuate in shape and includes the opaque material. The first outer section includes a first inner shoulder, and a first inner lip extending inwardly relative to the first inner shoulder.

Abstract: Embodiments described herein provide an apparatus and method for fabricating semiconductor devices with improved process control and performance. The apparatus includes a processing chamber with first and second RF coil assemblies generating primary and secondary plasmas in distinct regions, along with first and second electromagnet assemblies for independent magnetic field control. A removable biasable flux optimizer is disposed in the apparatus to modulate plasma distribution and directionality. The method involves a three-step sequence comprising Inductive coupled plasma (IMP) low energy deposition, deposition for enhanced step coverage, and etching for overhang removal. The ICP deposition utilizes primary and secondary plasmas generated by the RF coil assemblies, with intensified collisions achieved through chamber pressure increase. Additionally, a simultaneous deposition and etching process can be employed, with optional additional etching steps for improved overhang removal.

Abstract: A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

Abstract: A PVD target structure is provided. The PVD target structure includes a target body having a first side and a second side opposite to the first side. The first side of the target body includes a first region and a second region surrounding the first region. The second region comprises a knurled profile. A method for preparing PVD target structure is also provided.

Abstract: A cathodic arc coating system includes alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN) disposed on a substrate. A cathodic arc process includes a sub-hertz variable bias forming the alternating layers of alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN) disposed on a substrate.

Abstract: The present invention relates to a metallic bipolar plate comprising a metal substrate and at least one layer of a non-hydrogenated transition metal-doped diamond-like carbon (DLC) provided on the metal substrate, wherein the non-hydrogenated DLC comprises at least one transition metal selected from groups 4d, 5d and 6d of the periodic table of elements and a part of the at least one transition metal is present in the form of carbide of the at least one transition metal in the non-hydrogenated DLC as a matrix. The non-hydrogenated transition metal-doped DLC has an indentation hardness of ?35 GPa, preferably of ?40 GPa. The metal-doped DLC used as a coating of metallic bipolar plates in fuel cells and electrolyzers exhibits high corrosion resistance and low interface contact resistance even for longer lifetimes (>10,000 hours) and harsh operational conditions.

Abstract: A method for making tantalum sputtering targets with stable through thickness {100}+{111} preferred crystallographic orientation volume fraction is disclosed. Starting from electron beam melted tantalum ingots, the method includes various forging, controlled rolling and recrystallization annealing. The resultant tantalum sputtering targets yield stable deposition rate and film uniformity from burn-in through the end-of-life during sputtering. Also disclosed is a tantalum sputtering target made in accordance with the disclosed method.