Abstract: A decorative member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The light absorbing layer includes a copper oxynitride (CuaObNc).

Abstract: A stage device includes a stage having a copper main body and an electrostatic chuck, a cooling unit disposed below the stage, and a power supply mechanism for supplying power to an attraction electrode of the electrostatic chuck from a DC power supply disposed below the stage. The power supply mechanism includes a pair of terminals disposed at an outer peripheral portion of the stage while being spaced apart from each other, a first power supply line having a pair of metal rods spaced apart from each other while extending toward the stage and being connected to the DC power supply, a second power supply line having a pair of metal rods spaced apart from each other and connected to the terminals, and a connecting unit where the metal rods of the first power supply line and the metal rods of the second power supply line are connected.

Abstract: The present invention relates to a coating device comprising a vacuum coating chamber for conducting vacuum coating processes, said vacuum coating chamber comprising: —one or more cooled chamber walls 1 having an inner side 1 b and a cooled side 1 a, —protection shields being arranged in the interior of the chamber as one or more removable shielding plates 2, which cover at least part of the surface of the inner side 1 b of the one or more cooled chamber walls 1, wherein at least one removable shielding plate 2 is placed forming a gap 8 in relation to the surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein: —thermal conductive means 9 are arranged filling the gap 8 in an extension corresponding to at least a portion of the total surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein the thermal conductive means 9 enable conductive heat transfer between said removable shielding p

Abstract: A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

Abstract: An arc ignition device for cathodic arc deposition of a target material onto a substrate, comprising a trigger finger arranged moveable between a contacting position and a resting position, wherein in the contacting position a side surface of an adjacent target can be physically contacted by the trigger finger, and in the resting position the adjacent target cannot be contacted by the trigger finger, wherein during cathodic arc deposition of a target material, the trigger finger is arranged movable between the contacting position and the resting position in such a way that the contamination of the trigger finger with deposited target material during the cathodic arc deposition of the target material can be minimized.

Abstract: A rotary cathode assembly includes a cathode having a tube shape and defining a hollow center, a shield surrounding the cathode, the shield defining an access opening that exposes a portion of the cathode, and a rotary magnet subassembly disposed within the hollow center of the cathode. The rotary magnet subassembly includes a first magnetic component having a first magnetic field strength and a second magnetic component having a second magnetic field strength. The first magnetic field strength is greater than the second magnetic field strength. Characteristically, the first magnet component and the second magnetic component are rotatable between a first position in which the first magnetic component faces the access opening and a second position in which the second magnetic component faces the access opening. A coating system including the rotary cathode assembly is also provided.

Abstract: A sputtering equipment is adapted for sputtering substrates, where each of the substrates includes two opposite main surfaces and side surfaces connecting the two main surfaces. The sputtering equipment includes a cavity, at least one target set and a carrier box. The at least one target set is disposed in the cavity, the target set includes targets, and the targets are staggered at both side surfaces of an axis. The carrier box is movably disposed so as to enter and exit the cavity, and includes substrate accommodating grooves. The substrates are adapted for being placed in the substrate accommodating grooves of the carrier box, and at least one side surface of each of the substrates is located outside the carrier box and protrudes toward the at least one target set.

Abstract: Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Abstract: A sputtering-target material (2) is composed of aluminum having a purity of 99.999 mass % or higher and unavoidable impurities. When an average crystal-grain diameter at the plate surface (21) is given as Ds [?m], an average crystal-grain diameter at a depth of ¼th of the plate thickness (22) is given as Dq [?m], and an average crystal-grain diameter at a depth of ½ of the plate thickness (23) is given as Dc [?m], the formulas below are satisfied, and the average crystal-grain diameter changes continuously in a plate-thickness direction. Ds?230 Dq?280 Dc?300 1.2?Dq/Ds 1.

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.

Abstract: A method for depositing a coating of a source material onto a panel is disclosed. The method includes providing a cathodic arc, the cathodic arc including a target surface, the target surface disposed along a target deposition axis and able to emit the source material as a generally cloud of source material vapor and a generally conical stream of liquid particles of the source material. The method further includes positioning the panel relative to the target surface based on a deposition angle, the deposition angle being between the target surface and an outer limit of the generally conical stream of liquid particles o the source material. The method may further include emitting the source material from the target surface as the generally conical cloud of source material vapor and coating the edge with the cloud of source material vapor to provide an edge coating.

Abstract: A vacuum arc source for arc evaporation of boride includes: a cathode made of at least 90 at-% of boride, in particular made of more than 98 at-% of boride; an anode, which is preferably in the shape of a disk; a body made of a material which is less preferred by arc discharge compared to the cathode, the body surrounding the cathode in such a way that during operation of the vacuum arc source, movement of an arc on an arc surface of the cathode is limited by the body. At least 90 at-% of the material of the anode is of the same chemical composition as the cathode.

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Abstract: Provided is a sputtering target containing 0.05 at % or more of Bi, and having a total content of metal oxides of from 10 vol % to 70 vol %, the balance containing at least Ru.

Abstract: Provided is a method for arranging a protective coating for a thermally stressed structure, having at least one layer of alpha-aluminium oxide or of element-modified alpha-aluminium oxide, and wherein the protective coating is applied by reactive cathodic arc vaporization. A protective coating produced by the method and a component having a protective coating is also provided.

Abstract: Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Abstract: Provided herein are deposition systems utilizing coated grids in an ion deposition process which provide more predictable erosion of the coating rather than erosion of the grid itself. Further, coatings may be utilized in which the coating material does not act as a contaminant to the deposition process, thereby eliminating contamination of the sample surface due to deposition of unwanted grid material. Also provided are methods of refurbishing a coated grid by periodically replacing the coating material thus protecting the grid itself and allowing a grid to be used indefinitely.

Abstract: Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

Abstract: An ARC evaporator comprising: a cathode assembly comprising a cooling plate (11), a target (1) as cathode element, an electrode arranged for enabling that an arc between the electrode and the front surface (1A) of the target (1) can be established—a magnetic guidance system placed in front of the back surface (1 B) of the target (i) comprising means for generating one or more magnetic whereas: —the borders of the cathode assembly comprise a surrounding shield (15) made of ferromagnetic material, wherein the surrounding shield (15) has a total height (H) in the transversal direction, said total height (H) including a component (C) for causing a shielding effect of magnetic field lines extending in any longitudinal directions, establishing in this manner the borders of the cathode assembly as limit of the extension of the magnetic field lines in any longitudinal direction.

Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.